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91. 发明申请

US20050136311A1 Power generation control system, power generation control method, program, and medium 审中-公开
公开(公告)号：US20050136311A1
公开(公告)日：2005-06-23
申请号：US11051836
申请日：2005-02-04
申请人： Tetsuya Ueda , Osamu Ogawa , Jiro Suzuki , Shinji Miyauchi
发明人： Tetsuya Ueda , Osamu Ogawa , Jiro Suzuki , Shinji Miyauchi
IPC分类号： H01M8/04 , H01M16/00 , H02J3/38 , H02J7/34 , H01M8/10
CPC分类号： H02J3/00 , H01M8/04604 , H01M8/04626 , H01M8/0494 , H01M8/04947 , H01M8/04955 , H01M8/04992 , H01M16/006 , H02J3/14 , H02J3/38 , H02J7/34 , H02J2001/004
摘要： It has been difficult to reduce a waste of energy in a fuel cell power generating process when, for example, a temporary rise or drop of a power load occurs. A fuel cell power generation system includes: load detection means of detecting power requested by a load; and output control means of accumulating a time at which a detected power requested by the load is equal to or larger than a predetermined value when a fuel cell body does not generate power to be supplied to the load, and allowing the fuel cell body to start generating power to be supplied to the load according to a predetermined rule based on an accumulation result.

92. 发明申请

US20050059231A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050059231A1
公开(公告)日：2005-03-17
申请号：US10958282
申请日：2004-10-06
申请人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
发明人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/48 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/288 , H01L21/2885 , H01L21/32051 , H01L21/76879 , H01L21/76885 , H01L21/76897 , H01L23/5222 , H01L23/5226 , H01L23/5228 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.
摘要翻译：半导体器件包括由半导体衬底上形成的第一金属膜和夹在其间的绝缘膜构成的多层膜和沉积在第一金属膜上的第二金属膜制成的金属互连。在金属互连件上形成具有通孔的层间绝缘膜。选择性地在通孔内的第二金属膜上生长第三金属膜，从而能够从第三金属膜形成插塞。

93. 发明申请

US20050054195A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050054195A1
公开(公告)日：2005-03-10
申请号：US10900272
申请日：2004-07-28
申请人： Takato Handa , Hiroyuki Umimoto , Tetsuya Ueda
发明人： Takato Handa , Hiroyuki Umimoto , Tetsuya Ueda
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/52 , H01L23/528 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/76801 , H01L21/76816 , H01L21/76832 , H01L21/76834 , H01L21/76865 , H01L21/76877 , H01L21/76886 , H01L23/5283 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An inventive semiconductor device includes: a lower interlayer dielectric film provided on a substrate; a lower interconnect made up of a lower barrier metal layer formed along a wall surface of a lower interconnect groove in the lower interlayer dielectric film, and a copper film; and an upper plug and an upper interconnect. The upper plug passes through a silicon nitride film and comes into contact with the copper film of the lower interconnect. The lower interconnect is provided with a large number of convex portions buried in concave portions of the lower interconnect groove. Thus, voids in the lower interconnect are also gettered by the convex portions. Accordingly, the concentration of voids in the contact area between the lower interconnect and the upper plug is relieved, and an increase in contact resistance is suppressed.
摘要翻译：本发明的半导体器件包括：设置在基板上的下层间绝缘膜; 由沿下层间电介质膜的下互连槽的壁面形成的下阻挡金属层和铜膜构成的下互连件; 以及上部插头和上部互连件。上塞通过氮化硅膜并与下互连的铜膜接触。下部互连件设置有埋在下部互连槽的凹部中的大量凸部。因此，下部互连件中的空隙也被凸起部分吸收。因此，下部布线和上部插塞之间的接触区域中的空隙的浓度被释放，并且抑制了接触电阻的增加。

94. 发明申请

US20050019631A1 Fuel cell cogeneration system 审中-公开
标题翻译：燃料电池热电联产系统
公开(公告)号：US20050019631A1
公开(公告)日：2005-01-27
申请号：US10894261
申请日：2004-07-19
申请人： Shinji Miyauchi , Tetsuya Ueda , Yoshiaki Yamamoto
发明人： Shinji Miyauchi , Tetsuya Ueda , Yoshiaki Yamamoto
IPC分类号： H01M8/00 , H01M8/02 , H01M8/04
CPC分类号： H01M8/04052 , F24D17/001 , F24D19/1051 , F24D2200/19 , F24D2220/042 , F24D2240/26 , H01M8/04029 , H01M8/04037 , H01M8/04059 , H01M8/04358 , H01M8/04373 , H01M8/04425 , H01M8/04723 , H01M8/04738 , H01M8/04955 , H01M2250/405 , Y02B30/18 , Y02B90/16 , Y02P80/15
摘要： A fuel cell cogeneration system comprises a fuel cell, a cooling system for the fuel cell, a heater, a heat utilization portion configured to store heat recovered in the cooling system to allow the heat to be consumed, a detector configured to detect calories remaining in the heat utilization portion, and a controller, wherein the controller determines whether or not the calories remaining in the heat utilization portion are at least not less than the calories required to increase the temperature of the fuel cell to the operating temperature, and based on determination, increases the temperature of the fuel cell to the operating temperature by supplying the remaining calories to the fuel cell through the cooling system and/or by heating the cooling water in the cooling system by the heater.
摘要翻译：燃料电池热电联产系统包括燃料电池，用于燃料电池的冷却系统，加热器，热利用部分，被配置为存储在冷却系统中回收的热量以允许热量被消耗;检测器，被配置为检测热量，热利用部分和控制器，其中控制器确定热利用部分中剩余的卡路里是否至少不小于将燃料电池的温度升高到工作温度所需的热量，并且基于确定通过冷却系统向燃料电池供给剩余的热量和/或通过加热器加热冷却系统中的冷却水，将燃料电池的温度提高到工作温度。

95. 发明授权

US06800963B2 Power controller, power generation system, and control method of power controller 失效
标题翻译：功率控制器，发电系统以及电源控制器的控制方法
公开(公告)号：US06800963B2
公开(公告)日：2004-10-05
申请号：US10290685
申请日：2002-11-08
申请人： Shinji Miyauchi , Tetsuya Ueda , Masataka Ozeki , Hiroyuki Zimbo , Kiichi Koike
发明人： Shinji Miyauchi , Tetsuya Ueda , Masataka Ozeki , Hiroyuki Zimbo , Kiichi Koike
IPC分类号： H02J100
CPC分类号： H01M8/04604 , H01M8/04567 , H01M8/04626 , H01M8/0494 , H01M8/04947 , H01M16/006 , H02J1/108 , H02J9/062 , H02J2001/004 , Y02B90/14 , Y10T307/729
摘要： A power controller includes power storage means for storing DC power from DC power generation means that. Power conversion means include a DC/DC converter that converts a voltage when receiving a DC input. Charge and discharge means discharge electric power from the power storage means to the power conversion means and charge DC power from the DC power generation means in the power storage means. The charge and discharge means are provided among the DC power generation means, the power storage means and the power conversion means. Detection means detect electric energy of an external power load to which power from at least the power conversion means is supplied. Control means control operation of the charge and discharge means on the basis of the detected electric energy.
摘要翻译：功率控制器包括用于存储来自直流发电装置的直流电力的蓄电装置。功率转换装置包括DC / DC转换器，其在接收DC输入时转换电压。放电装置将电力从蓄电装置放电到电力转换装置，并对来自直流发电装置的直流电力进行蓄电手段。充电和放电装置设置在直流发电装置，蓄电装置和电力转换装置之间。检测装置检测来自至少电力转换装置供电的外部电力负载的电能。控制装置控制基于检测到的电能对充放电手段进行操作。

96. 发明授权

US06727011B2 Fuel cell system and method of operating fuel cell system 失效
标题翻译：燃料电池系统及运行燃料电池系统的方法
公开(公告)号：US06727011B2
公开(公告)日：2004-04-27
申请号：US10359351
申请日：2003-02-05
申请人： Jiro Suzuki , Tetsuya Ueda , Hiroyuki Zimbo , Kiichi Koike
发明人： Jiro Suzuki , Tetsuya Ueda , Hiroyuki Zimbo , Kiichi Koike
IPC分类号： H01M1200
CPC分类号： H01M8/04089 , H01M8/0606 , H01M16/003 , Y02P90/40
摘要： A fuel cell system includes a fuel cell that supplies an oxidizer containing oxygen to a positive electrode, supplies a fuel gas containing hydrogen to a negative electrode and generates power, a battery containing at least water as an electrolyte, a hydrogen tank that stores hydrogen generated from the battery and a hydrogen pipe that supplies hydrogen in the hydrogen tank to the fuel cell.
摘要翻译：一种燃料电池系统，包括向正极供给含有氧的氧化剂的燃料电池，向负极供给含有氢的燃料气体并产生电力，至少含有水作为电解质的电池，蓄积氢的氢罐从电池和在氢罐中向氢燃料电池供应氢的氢管。

97. 发明授权

US06242336B1 Semiconductor device having multilevel interconnection structure and method for fabricating the same 失效
公开(公告)号：US06242336B1
公开(公告)日：2001-06-05
申请号：US09186067
申请日：1998-11-05
申请人： Tetsuya Ueda , Eiji Tamaoka , Nobuo Aoi
发明人： Tetsuya Ueda , Eiji Tamaoka , Nobuo Aoi
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/76801 , H01L21/7682 , H01L21/76838 , H01L21/76885 , H01L23/5222 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device having a multilevel interconnection structure according to the present invention includes the steps of: covering a surface of a substrate with an insulating film; depositing a conductive film on the insulating film; forming a first interlevel dielectric film on the conductive film; forming an interlevel contact hole in the first interlevel dielectric film so as to reach the conductive film; filling in the interlevel contact hole with an interconnecting metal; forming a masking layer, defining a pattern of a first interconnect layer, on the first interlevel dielectric film so as to cover at least part of the interconnecting metal; forming the first interconnect layer out of the conductive film by etching the first interlevel dielectric film using the masking layer as a mask and by etching the conductive film using the masking layer and the interconnecting metal as a mask; removing the masking layer; depositing a second interlevel dielectric film over the substrate so as to cover the interconnecting metal and the first interconnect layer; planarizing the second interlevel dielectric film, thereby exposing at least part of the interconnecting metal; and forming a second interconnect layer to be electrically connected to an upper part of the interconnecting metal.

98. 发明授权

US5760429A Multi-layer wiring structure having varying-sized cutouts 失效
标题翻译：具有不同大小的切口的多层布线结构
公开(公告)号：US5760429A
公开(公告)日：1998-06-02
申请号：US834303
申请日：1997-02-18
申请人： Kousaku Yano , Tetsuya Ueda
发明人： Kousaku Yano , Tetsuya Ueda
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528
CPC分类号： H01L23/5226 , H01L21/76805 , H01L2924/0002
摘要： An integrated circuit having a multi-layered metal wiring structure with interlayer insulating films therebetween. A small cutout is made in a metal wiring when it is desirous to have the metal wiring touch a contact formed in a through hole passing through said cutout. A larger cutout is made in a metal wiring when it is desirous to have the metal wiring remain spaced from a contact formed in a through hole passing through said cutout.
摘要翻译：一种集成电路，具有在其间具有层间绝缘膜的多层金属布线结构。当希望金属布线接触通过所述切口的通孔中形成的触点时，在金属布线中形成小切口。当希望金属布线保持与通过所述切口的通孔中形成的触点间隔开时，在金属布线中形成较大的切口。

99. 发明授权

US5327012A Semiconductor device having a double-layer interconnection structure 失效
标题翻译：具有双层互连结构的半导体器件
公开(公告)号：US5327012A
公开(公告)日：1994-07-05
申请号：US993885
申请日：1992-12-23
申请人： Kohsaku Yano , Tetsuya Ueda , Teruhito Ohnishi , Hiroshi Nishimura
发明人： Kohsaku Yano , Tetsuya Ueda , Teruhito Ohnishi , Hiroshi Nishimura
IPC分类号： H01L23/522 , H01L23/532 , H01L23/48
CPC分类号： H01L23/5329 , H01L23/5226 , H01L2924/0002
摘要： A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films, respectively, have a multi-layered structure including a sub-layer made of Al or Al alloys.
摘要翻译：提供一种具有与第一和第二金属膜之间的接触部分的双层互连的半导体器件，每个具有多层结构的接触部分被至少覆盖有氮化硅膜，其中提高了接触部分的电迁移特性。通过将通过在接触部分形成的氮化物膜的应力乘以氮化硅膜的厚度而获得的值不超过通过将氮化硅膜的厚度乘以所获得的值的2/5来获得的改进通过在非接触部分形成的氮化物膜的应力。由此，施加在第二金属膜上的应力减小，从而将接触部分的电迁移寿命提高大约一个数量级。第一和第二金属膜分别具有包括由Al或Al合金制成的子层的多层结构。

100. 发明授权

US5198884A Semiconductor devices having a double-layer interconnection structure 失效
标题翻译：具有双层互连结构的半导体器件
公开(公告)号：US5198884A
公开(公告)日：1993-03-30
申请号：US675833
申请日：1991-03-27
申请人： Kohsaku Yano , Tetsuya Ueda , Teruhito Ohnishi , Hiroshi Nishimura
发明人： Kohsaku Yano , Tetsuya Ueda , Teruhito Ohnishi , Hiroshi Nishimura
IPC分类号： H01L23/522 , H01L23/532
CPC分类号： H01L23/5226 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device having a double-layer interconnection with contact portions between first and second metal films covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films are made of Al or Al-based alloys.
摘要翻译：提供了具有与至少覆盖有氮化硅膜的第一和第二金属膜之间的接触部分的双层互连的半导体器件，其中改善了接触部分处的电迁移特性。通过将通过在接触部分形成的氮化物膜的应力乘以氮化硅膜的厚度而获得的值不超过通过将氮化硅膜的厚度乘以所获得的值的2/5来获得的改进通过在非接触部分形成的氮化物膜的应力。由此，施加在第二金属膜上的应力减小，从而将接触部分的电迁移寿命提高大约一个数量级。第一和第二金属膜由Al或Al基合金制成。

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