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    • 4. 发明授权
    • Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts
    • 传输线微波装置包括两部分之间的至少一个不可逆传输线部分
    • US08294538B2
    • 2012-10-23
    • US12530102
    • 2008-03-05
    • Tetsuya Ueda
    • Tetsuya Ueda
    • H01P3/08
    • H01Q1/38H01P1/203H01P1/207H01P1/32H01Q13/206
    • A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.
    • 传输线微波装置包括至少一个不可逆传输线部分,其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。 不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性,并且具有与由传播方向和磁化方向形成的平面不对称的结构。 不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率,使得正向传播常数和反向传播常数具有非相互相位 特征彼此不同。 微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。
    • 5. 发明授权
    • Method for fabricating semiconductor device and semiconductor device
    • 制造半导体器件和半导体器件的方法
    • US08034707B2
    • 2011-10-11
    • US12897416
    • 2010-10-04
    • Tetsuya Ueda
    • Tetsuya Ueda
    • H01L21/4763
    • H01L21/76801H01L21/76802H01L21/7682H01L21/76849H01L23/5222H01L23/53238H01L23/53295H01L2924/0002H01L2924/12044H01L2924/00
    • A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.
    • 一种制造半导体器件的方法包括以下步骤:在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分,从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜,其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。