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    • 12. 发明申请
    • MEMS RESONATOR AND MANUFACTURING METHOD OF THE SAME
    • MEMS谐振器及其制造方法
    • US20100109815A1
    • 2010-05-06
    • US12684336
    • 2010-01-08
    • Shogo INABAAkira SATOToru WATANABETakeshi MORI
    • Shogo INABAAkira SATOToru WATANABETakeshi MORI
    • H01P7/00
    • H03H3/0073H03H9/1057Y10S977/721
    • A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
    • 一种用于制造具有形成在基板上的半导体器件和微机电系统结构单元的微机电系统谐振器的方法。 该方法包括:使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。
    • 13. 发明授权
    • MEMS resonator and manufacturing method of the same
    • MEMS谐振器及其制造方法相同
    • US07671430B2
    • 2010-03-02
    • US11928519
    • 2007-10-30
    • Shogo InabaAkira SatoToru WatanabeTakeshi Mori
    • Shogo InabaAkira SatoToru WatanabeTakeshi Mori
    • H01L21/66
    • H03H3/0073H03H9/1057Y10S977/721
    • A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
    • 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括:使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。
    • 16. 发明授权
    • MEMS vibrator and oscillator
    • MEMS振动器和振荡器
    • US08760234B2
    • 2014-06-24
    • US13550950
    • 2012-07-17
    • Shogo Inaba
    • Shogo Inaba
    • H03B5/30
    • H03H9/2457B81B3/007B81B2201/014H03H3/0072H03H2009/02283H03H2009/02456H03H2009/02511
    • A MEMS vibrator includes: a substrate; a first electrode disposed above the substrate; and a second electrode disposed in a state where at least one portion of the second electrode has a space between the first electrode and the second electrode, and having a beam portion capable of vibrating, in the thickness direction of the substrate, with electrostatic force and a supporting portion supporting one edge of the beam portion and disposed above the substrate, wherein a supporting side face of the supporting portion supporting the one edge has a bending portion which bends in plan view from the thickness direction of the substrate, and the one edge is supported by the supporting side face including the bending portion.
    • MEMS振动器包括:基板; 设置在所述基板上方的第一电极; 以及第二电极,其设置在所述第二电极的至少一部分具有在所述第一电极和所述第二电极之间的空间的状态下,并且具有能够在所述基板的厚度方向上以静电力振动的光束部分, 支撑部分,其支撑梁部分的一个边缘并且设置在基板上方,其中支撑所述一个边缘的支撑部分的支撑侧面具有从基板的厚度方向在平面图中弯曲的弯曲部分,并且所述一个边缘 由包括弯曲部的支撑侧面支撑。