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1. 发明授权

US09695036B1 Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same 有权
公开(公告)号：US09695036B1
公开(公告)日：2017-07-04
申请号：US13759013
申请日：2013-02-04
申请人： SiTime Corporation
发明人： Renata Melamud Berger , Ginel C. Hill , Paul M. Hagelin , Charles I. Grosjean , Aaron Partridge , Joseph C. Doll , Markus Lutz
IPC分类号： H01L31/058 , H03H9/00 , B81B3/00 , H03H9/02 , H03H9/24
CPC分类号： B81B3/0024 , H03H9/02448 , H03H9/2405 , H03H9/2457
摘要： The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

2. 发明授权

US09233833B2 MEMS element and oscillator 有权
标题翻译： MEMS元件和振荡器
公开(公告)号：US09233833B2
公开(公告)日：2016-01-12
申请号：US14031143
申请日：2013-09-19
申请人： Seiko Epson Corporation
发明人： Ryuji Kihara
IPC分类号： H03H9/24 , H03B5/30 , B81B3/00 , H03H9/02
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/0118 , B81B2203/019 , H03B5/30 , H03H9/2457 , H03H2009/02251 , H03H2009/02488 , H03H2009/02511
摘要： A MEMS element includes: a substrate; a first electrode formed above the substrate; and a second electrode having a support portion and a beam portion, the support portion being formed above the substrate, the beam portion extending from the support portion, being formed in a state of having a gap between the first electrode and the beam portion, and being capable of vibrating in a thickness direction of the substrate. The width of the beam portion decreases with distance from a base of the beam portion toward a tip of the beam portion. The central length of the beam portion is larger than the lengths of ends of the beam portion. The width of the base of the beam portion is larger than the central length of the beam portion.
摘要翻译： MEMS元件包括：基板; 形成在所述衬底上的第一电极; 以及具有支撑部和梁部的第二电极，所述支撑部形成在所述基板的上方，所述梁部从所述支撑部延伸，形成为在所述第一电极和所述梁部之间具有间隙的状态，以及能够在基板的厚度方向上振动。梁部分的宽度随着从梁部分的基部朝向梁部分的尖端的距离而减小。梁部分的中心长度大于梁部分的端部长度。梁部分的基部的宽度大于梁部分的中心长度。

3. 发明授权

US09083309B2 Microelectronic device and electronic apparatus 有权
标题翻译：微电子器件和电子设备
公开(公告)号：US09083309B2
公开(公告)日：2015-07-14
申请号：US13297692
申请日：2011-11-16
申请人： Yoko Kanemoto
发明人： Yoko Kanemoto
IPC分类号： H01L21/00 , H03H9/24 , B81B3/00 , B81C1/00 , H03H9/02
CPC分类号： H03H9/2457 , B81B3/0013 , B81B2201/0271 , B81B2203/0118 , B81C1/00968 , H03H2009/02511
摘要： A movable section located in a hollow portion covered with a wall and a first sealing layer which are on a substrate and the first sealing layer located in an area facing the movable section are provided, the movable section is located between the substrate and the first sealing layer, and at least part of the movable section and the first sealing layer is an electric conductor.
摘要翻译：设置在位于衬底上的覆盖有中空部分的空心部分和位于与可动部分相对的区域中的第一密封层的可移动部分位于衬底和第一密封件之间层，并且可动部的至少一部分和第一密封层是电导体。

4. 发明授权

US09063023B2 Vibration transducer and its manufacturing method 有权
标题翻译：振动传感器及其制造方法
公开(公告)号：US09063023B2
公开(公告)日：2015-06-23
申请号：US13228855
申请日：2011-09-09
申请人： Takashi Yoshida
发明人： Takashi Yoshida
IPC分类号： G01L9/08 , G01H13/00 , G01L9/00 , G01L1/10 , B81B3/00
CPC分类号： G01L9/0019 , B81B3/001 , B81B2201/025 , B81B2201/0264 , B81B2201/0285 , B81B2203/0118 , G01L1/106 , G01L9/0013 , H03H9/2457 , H03H2009/02496
摘要： A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.
摘要翻译：振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在垂直于所述硅单晶衬底的表面的方向上比在与其平行的方向上更长的截面形状，由硅制成的壳体，围绕振动梁间隙，并与硅单晶基板一起形成真空室，与硅单晶基板的表面平行布置的板状第一电极板，第一电极板具有一端与振动束相连接，板状的第二和第三电极板与硅单晶衬底的表面平行设置，以便彼此相对地插入振动束，并且形成在相对侧面上的凹凸的振动束和第二和第三电极板。

5. 发明授权

US09054640B2 Method and system of an ultra high Q silicon cantilever resonator for thin film internal friction and Young's modulus measurements 有权
标题翻译：用于薄膜内摩擦和杨氏模量测量的超高Q硅悬臂谐振器的方法和系统
公开(公告)号：US09054640B2
公开(公告)日：2015-06-09
申请号：US13929243
申请日：2013-06-27
申请人： Xiao Liu , Thomas H. Metcalf
发明人： Xiao Liu , Thomas H. Metcalf
IPC分类号： H03B28/00 , H01L21/66 , G01N29/12 , H03H9/24
CPC分类号： H03B28/00 , G01N29/12 , G01N2203/0282 , G01N2203/0286 , G01N2291/02827 , G01N2291/0427 , H01L22/12 , H01L22/30 , H03H9/2457
摘要： This invention provides an extremely accurate way to characterize the Young's modulus of thin film materials with thicknesses in the nanometer range. It takes advantage of a recently developed high Q silicon Young's modulus resonator (YMR), which has a record high quality factor of about fifty million in operation at temperatures below 10 degrees Kelvin (10K). Because of the high Q of the YMR, the temperature stability of the YMR's resonance frequency below 1K, and the extremely high degree of vibration isolation inherent in the inventive design, the relative resolution of the resonant frequency is typically in 2×10−7. This is enough to resolve a resonant frequency shift after a deposition of a thin film onto the sensitive part of the resonator, and to compute the Young's modulus of thin film materials of even a few monolayers thickness.
摘要翻译：本发明提供了一种非常精确的方法来表征具有纳米范围厚度的薄膜材料的杨氏模量。它利用了最近开发的高Q硅杨氏模量谐振器（YMR），在低于10开氏度（10K）的温度下，它具有约五千万的创纪录的高品质因数。由于YMR的高Q值，YMR的共振频率的温度稳定度低于1K，本发明设计中固有的极高的振动隔离度，谐振频率的相对分辨率通常在2×10-7。这足以在将薄膜沉积在谐振器的敏感部分上之后解析谐振频移，并且计算甚至几个单层厚度的薄膜材料的杨氏模量。

6. 发明申请

US20150153221A1 METHOD FOR DETECTING A PERTURBATION BY HYSTERETIC CYCLE USING A NONLINEAR ELECTROMECHANICAL RESONATOR AND DEVICE USING THE METHOD 审中-公开
标题翻译：使用非线性电化学共振器和器件利用方法检测扰动周期的方法
公开(公告)号：US20150153221A1
公开(公告)日：2015-06-04
申请号：US14558314
申请日：2014-12-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ECOLE NATIONALE TRAVAUX PUBLICS DE L'ETAT , INSTITUT NATIONAL SCIENCES APPLIQUEES DE LYON , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： Sebastien HENTZ , Sebastien BAGUET , Regis DUFOUR , Claude-Henri LAMARQUE , Van Nghi NGUYEN
IPC分类号： G01H13/00 , G01N29/36 , H01J49/26
CPC分类号： G01H13/00 , B81B2201/0214 , B81B2201/0271 , B81B2203/0118 , B81C99/0045 , G01H11/00 , G01N29/36 , G01N2291/014 , H01J49/26 , H03H9/02 , H03H9/02259 , H03H9/2457 , H03H2007/006 , H03H2009/02267
摘要： A method is provided for detecting a perturbation with respect to an initial state, of a device comprising at least one resonant mechanical element exhibiting a physical parameter sensitive to a perturbation such that the said perturbation modifies the resonance frequency of the said resonant mechanical element. A device is provided for detecting a perturbation by hysteretic cycle comprising at least one electromechanical resonator with nonlinear behaviour and means for actuation and for detection of the reception signal via a transducer so as to analyse the response signal implementing the method. A mass sensor and a mass spectrometer using the device are also provided.
摘要翻译：提供了一种用于检测相对于初始状态的扰动的方法，该装置包括至少一个表现出对扰动敏感的物理参数的共振机械元件，使得所述扰动修改所述谐振机械元件的谐振频率。提供了一种用于检测包括至少一个具有非线性行为的机电谐振器的滞后周期的扰动的装置，以及用于致动的装置和用于经由换能器检测接收信号的装置，以便分析实施该方法的响应信号。还提供了使用该装置的质量传感器和质谱仪。

7. 发明申请

US20140339963A1 MICROELECTROMECHANICAL RESONATOR 有权
标题翻译：微电子谐振器
公开(公告)号：US20140339963A1
公开(公告)日：2014-11-20
申请号：US13897591
申请日：2013-05-20
申请人： MURATA ELECTRONICS OY
发明人： Antti IIHOLA , Ville KAAJAKARI , Jarmo KEMPPAINEN , Pasi KIVINEN , Risto MOURUJÄRVI , Marcus RINKIÖ
IPC分类号： H03H9/17 , H01L41/39
CPC分类号： H01L41/39 , H03H3/0076 , H03H9/02259 , H03H9/2457 , H03H2009/02291 , H03H2009/02322 , H03H2009/02496
摘要： A method for manufacturing microelectromechanical flexural resonators with a deforming element that has an elongate body extending along a spring axis. A deforming element is positioned on the semiconductor wafer with a defined nominal n-type doping concentration such that a crystal orientation angle is formed between the spring axis of the deforming element and a crystal axis of the silicon semiconductor wafer. The combination of the crystal orientation angle and the nominal n-type doping concentration is adjusted to a specific range, based on total frequency error of the deforming element in a broad temperature range. The combination is optimized to a range where also sensitivity to variations in the material properties is minimized.
摘要翻译：一种用于制造具有沿弹簧轴延伸的细长主体的变形元件的微机电弯曲谐振器的方法。变形元件以规定的标称n型掺杂浓度定位在半导体晶片上，使得在变形元件的弹簧轴线和硅半导体晶片的晶轴之间形成晶体取向角。基于变形元件在宽温度范围内的总频率误差，将晶体取向角和标称n型掺杂浓度的组合调整到特定范围。该组合被优化到对材料性质的变化的敏感性最小化的范围。

8. 发明授权

US08686714B2 Electromechanical transducer and a method of providing an electromechanical transducer 有权
标题翻译：机电换能器和提供机电换能器的方法
公开(公告)号：US08686714B2
公开(公告)日：2014-04-01
申请号：US13058114
申请日：2009-07-28
申请人： Martijn Goossens , Jozef Thomas Martinus Van Beek
发明人： Martijn Goossens , Jozef Thomas Martinus Van Beek
IPC分类号： G01R29/22
CPC分类号： H03H9/02275 , H03H9/02259 , H03H9/02338 , H03H9/2457 , H03H2009/02511
摘要： The invention relates to an electromechanical transducer (100). The electromechanical transducer (100) comprises a cantilever beam (101) and an excitation unit (102) that is adapted for exciting a motion of the cantilever beam (101). A detection unit (103) is adapted for detecting an electrical signal (iout) in response to the excited motion of the cantilever beam (101).
摘要翻译：本发明涉及机电换能器（100）。机电换能器（100）包括悬臂梁（101）和适于激发悬臂梁（101）的运动的激励单元（102）。检测单元（103）适于响应于悬臂梁（101）的激发的运动来检测电信号（iout）。

9. 发明授权

US08674775B2 Out-of-plane resonator 有权
标题翻译：平面外谐振器
公开(公告)号：US08674775B2
公开(公告)日：2014-03-18
申请号：US13173449
申请日：2011-06-30
申请人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译：微机电系统（MEMS）装置包括锚定到基板的谐振器。谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。谐振器包括锚定到基板的第一电极。第一电极包括第一电极的释放部分的第二应变梯度。第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。谐振器可以包括锚定到衬底的谐振器锚。第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

10. 发明授权

US08629739B2 Out-of plane MEMS resonator with static out-of-plane deflection 有权
标题翻译：具有静态超平面偏转的平面外的MEMS谐振器
公开(公告)号：US08629739B2
公开(公告)日：2014-01-14
申请号：US13599240
申请日：2012-08-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H03H9/24 , H03H3/007 , H01L21/00
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.
摘要翻译：形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。该方法包括在衬底上形成结构层。结构层围绕电极的周边设置并具有残余膜应力梯度。该方法包括释放结构层以形成耦合到衬底的谐振器。残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。

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