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1. 发明授权

US09997595B2 Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device 有权
公开(公告)号：US09997595B2
公开(公告)日：2018-06-12
申请号：US15044446
申请日：2016-02-16
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch
IPC分类号： H01L21/70 , H01L29/06 , H01L21/762 , H03H3/007 , H03H9/24 , H03H9/02
CPC分类号： H01L29/0649 , H01L21/76202 , H03H3/0072 , H03H3/0073 , H03H9/2452 , H03H2009/02307 , H03H2009/02346 , H03H2009/02496
摘要： A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

2. 发明申请

US20170264263A1 THIN-FILM BULK ACOUSTIC RESONATOR, SEMICONDUCTOR APPARATUS COMPRISING OF SUCH AN ACOUSTIC RESONATOR, AND MANUFACTURE THEREOF 审中-公开
公开(公告)号：US20170264263A1
公开(公告)日：2017-09-14
申请号：US15416828
申请日：2017-01-26
申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
发明人： Herb He HUANG , Clifford Ian DROWLEY , Jiguang ZHU , Haiting LI
IPC分类号： H03H9/17 , H01L27/20 , H03H3/02 , H03H9/02 , H03H3/007
CPC分类号： H03H9/171 , H01L27/20 , H03H3/0073 , H03H3/02 , H03H9/02007 , H03H9/0547 , H03H9/173 , H03H9/587 , H03H2003/021 , H03H2003/027 , H03H2009/155
摘要： A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

3. 发明申请

US20160233299A1 SEMICONDUCTOR DEVICE, A MICRO-ELECTRO-MECHANICAL RESONATOR AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160233299A1
公开(公告)日：2016-08-11
申请号：US15044446
申请日：2016-02-16
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/0649 , H01L21/76202 , H03H3/0072 , H03H3/0073 , H03H9/2452 , H03H2009/02307 , H03H2009/02346 , H03H2009/02496
摘要： A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

4. 发明申请

US20160079953A1 INTEGRATED MEMS AND IC SYSTEMS AND RELATED METHODS 审中-公开
标题翻译：集成MEMS和IC系统及相关方法
公开(公告)号：US20160079953A1
公开(公告)日：2016-03-17
申请号：US14803413
申请日：2015-07-20
申请人： Trustees of Boston University
发明人： Josef-Stefan Wenzler , Tyler Dunn , Shyamsunder Erramilli , Pritiraj Mohanty
IPC分类号： H03H9/02
CPC分类号： H03H9/02244 , H01L27/1203 , H03B5/04 , H03H3/0073 , H03H9/02259 , H03H9/02393 , H03H9/2463 , H03H2009/02314 , H03H2009/02496
摘要： An integrated MEMS and IC system (MEMSIC), as well as related methods, are described herein. According to some embodiments, a mechanical resonating structure is coupled to an electrical circuit (e.g., field-effect transistor). For example, the mechanical resonating structure may be coupled to a gate of a transistor. In some cases, the mechanical resonating structure and electrical circuit may be fabricated on the same substrate (e.g., Silicon (Si) and/or Silicon-on-Insulator (SOI)) and may be proximate to one another.
摘要翻译：本文描述了集成的MEMS和IC系统（MEMSIC）以及相关方法。根据一些实施例，机械谐振结构耦合到电路（例如场效应晶体管）。例如，机械谐振结构可以耦合到晶体管的栅极。在一些情况下，机械谐振结构和电路可以制造在相同的衬底（例如，硅（Si）和/或绝缘体上硅（SOI））上，并且可以彼此靠近。

5. 发明授权

US09130531B1 Semiconductor arrangement with thermal insulation configuration 有权
标题翻译：具有隔热配置的半导体布置
公开(公告)号：US09130531B1
公开(公告)日：2015-09-08
申请号：US14226897
申请日：2014-03-27
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： H01L21/00 , H03H3/007
CPC分类号： B81B7/0083 , B81B3/0081 , B81B7/0038 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00285 , B81C2203/0771 , B81C2203/0792 , H01L25/0657 , H01L27/092 , H01L2924/0002 , H03H3/0073 , H01L2924/00
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。 MEMS晶片包括形成在感测层和膜之间的热绝缘体气隙。在CMOS晶片和MEMS晶片的膜之间形成环境压力室。环境压力室被配置为第二绝热体气隙。热绝缘体气隙和第二绝热体气隙保护诸如MEMS晶片的半导体装置的部分免受来自CMOS晶片的热量，否则可能损坏半导体装置的这些部分。在一些实施例中，一个或多个缓冲层作为应力缓冲器形成在帽晶片之上。

6. 发明授权

US08692338B2 Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate 有权
标题翻译：具有形成在公共硅衬底上的CMOS电路和MEMS谐振器的微电子器件
公开(公告)号：US08692338B2
公开(公告)日：2014-04-08
申请号：US13673459
申请日：2012-11-09
申请人： PixArt Imaging Inc.
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/00182 , B81C2203/0714 , H03H3/0073
摘要： A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
摘要翻译：提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底，多个金属层和隔离层的堆叠主体，并且具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后，去除隔离层的一部分，使得形成第二蚀刻通道，并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。然后，使用覆盖第一蚀刻通道的内侧壁的隔离层作为掩模，将通过第二蚀刻通道的各向同性蚀刻工艺施加到硅衬底，从而形成悬浮在硅衬底上方的MEMS谐振器。还提供微电子设备。

7. 发明授权

US08679355B2 MEMS element 有权
标题翻译： MEMS元件
公开(公告)号：US08679355B2
公开(公告)日：2014-03-25
申请号：US13321116
申请日：2010-05-26
申请人： Hauke Pohlmann , Ronald Dekker , Joerg Mueller , Martin Duemling
发明人： Hauke Pohlmann , Ronald Dekker , Joerg Mueller , Martin Duemling
IPC分类号： C23F1/00
CPC分类号： H03H3/0073 , B81B2201/0271 , B81C1/0019 , Y10T29/49005 , Y10T29/49128 , Y10T29/49156
摘要： A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.
摘要翻译：一种制造包括微机电元件的电子器件的方法，所述方法包括以下步骤：在衬底（32）的第一侧上提供材料层（34）; 在后面的材料（34）中提供沟槽（40）; 从沟槽（40）蚀刻材料，以便也从衬底（32）的第一侧蚀刻衬底（32）; 从衬底的第二侧研磨衬底（32）以露出沟槽（40）; 并使用暴露的沟槽（40）作为蚀刻孔。暴露的沟槽（40）用作用于从衬底（32）释放材料层（34）的一部分（例如光束谐振器（12））的蚀刻孔。设置有输入电极（6），输出电极（8）和顶部电极（10）。

8. 发明授权

US08667665B2 Method of manufacturing a microelectromechanical system (MEMS) resonator 有权
标题翻译：制造微机电系统（MEMS）谐振器的方法
公开(公告)号：US08667665B2
公开(公告)日：2014-03-11
申请号：US13562684
申请日：2012-07-31
申请人： Paul Merritt Hagelin , Charles Grosjean
发明人： Paul Merritt Hagelin , Charles Grosjean
IPC分类号： H04R31/00
CPC分类号： H03H9/02448 , H01L41/22 , H01L41/253 , H02N1/00 , H03B5/30 , H03B5/32 , H03H3/0072 , H03H3/0073 , H03H3/0076 , H03H9/02244 , H03H9/02433 , H03H9/125 , H03H9/21 , H03H9/2405 , H03H9/2468 , H03H9/2484 , H03H2009/02251 , H03H2009/02283 , H03H2009/02291 , H03H2009/02299 , H03H2009/02322 , H03H2009/0233 , H03H2009/02496 , H03H2009/155 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/4908
摘要： One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.
摘要翻译：本发明的一个实施例提出了降低MEMS谐振器的频率（TCF）的温度系数的方法。该方法包括光刻地限定MEMS谐振器光束中的狭缝并用补偿材料（例如，氧化物）填充槽，其中补偿材料的杨氏模量（TCE）的温度系数具有与材料的TCE相反的符号的谐振元件。

9. 发明授权

US08541850B2 Method and system for forming resonators over CMOS 有权
标题翻译：用于在CMOS上形成谐振器的方法和系统
公开(公告)号：US08541850B2
公开(公告)日：2013-09-24
申请号：US12333878
申请日：2008-12-12
申请人： Arun K. Gupta , Lance W. Barron , William C. McDonald
发明人： Arun K. Gupta , Lance W. Barron , William C. McDonald
IPC分类号： H01L29/84
CPC分类号： H03H3/0073 , H03H9/2426 , H03H2009/02322
摘要： In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.
摘要翻译：根据本公开的一个实施例，半导体衬底包括从半导体衬底向外设置的互补金属氧化物半导体（CMOS）电路。电极从CMOS电路向外设置。电极电耦合到CMOS电路。谐振器从电极向外设置。谐振器可操作以响应于至少部分地由电极传播的静电场以谐振频率振荡。

10. 发明申请

US20130069177A1 MICRO ELECTRONIC DEVICE 有权
标题翻译：微电子设备
公开(公告)号：US20130069177A1
公开(公告)日：2013-03-21
申请号：US13673459
申请日：2012-11-09
申请人： PixArt Imaging Inc.
发明人： Chuan-Wei WANG , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/00182 , B81C2203/0714 , H03H3/0073
摘要： A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
摘要翻译：提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底，多个金属层和隔离层的堆叠主体，并且具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后，去除隔离层的一部分，使得形成第二蚀刻通道，并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。然后，使用覆盖第一蚀刻通道的内侧壁的隔离层作为掩模，通过第二蚀刻通道的各向同性蚀刻工艺被施加到硅衬底，从而形成悬浮在硅衬底之上的MEMS谐振器。还提供微电子设备。

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