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    • 1. 发明授权
    • Electronic device covered by multiple layers and method for manufacturing electronic device
    • 多层覆盖的电子设备及制造电子设备的方法
    • US08796845B2
    • 2014-08-05
    • US13286494
    • 2011-11-01
    • Yoko KanemotoAkira SatoShogo Inaba
    • Yoko KanemotoAkira SatoShogo Inaba
    • H01L23/02H01L23/06H01L23/04
    • B81C1/00333B81C2203/0145
    • An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.
    • 根据本发明的电子设备包括:基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构,其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔,所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域,所述第一覆盖层在所述第一区域中比在所述第二区域中更薄,以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。
    • 5. 发明申请
    • ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
    • 电子设备及制造电子设备的方法
    • US20120104593A1
    • 2012-05-03
    • US13286494
    • 2011-11-01
    • Yoko KANEMOTOAkira SATOShogo INABA
    • Yoko KANEMOTOAkira SATOShogo INABA
    • H01L23/06H01L21/52
    • B81C1/00333B81C2203/0145
    • An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.
    • 根据本发明的电子设备包括:基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构,其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔,所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域,所述第一覆盖层在所述第一区域中比在所述第二区域中更薄,以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。