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    • 12. 发明授权
    • Multi-threshold CMOS latch circuit
    • 多阈值CMOS锁存电路
    • US07391249B2
    • 2008-06-24
    • US11607743
    • 2006-12-01
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • H03K3/289
    • H03K3/356156H03K3/012
    • Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.
    • 提供了一种多阈值互补金属氧化物半导体(MTCMOS)锁存电路,包括:数据反相电路,用于在睡眠控制信号的控制下反相输出输入数据; 传输门,用于在时钟控制信号的控制下传送从数据反相电路输出的数据信号; 信号控制电路,用于在复位控制信号和睡眠控制信号的控制下输出从传输门输出的数据信号; 以及用于反馈从信号控制电路输出的信号并且以睡眠模式保存数据的反馈电路。 MTCMOS锁存电路可以将由于按比例缩小到纳米级的元件引起的漏电流引起的功耗最小化,并且还通过使用具有低阈值电压的元件有助于逻辑电路的高速操作。
    • 20. 发明申请
    • Multi-threshold CMOS latch circuit
    • 多阈值CMOS锁存电路
    • US20070126486A1
    • 2007-06-07
    • US11607743
    • 2006-12-01
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • H03K3/00
    • H03K3/356156H03K3/012
    • Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.
    • 提供了一种多阈值互补金属氧化物半导体(MTCMOS)锁存电路,包括:数据反相电路,用于在睡眠控制信号的控制下反相输出输入数据; 传输门,用于在时钟控制信号的控制下传送从数据反相电路输出的数据信号; 信号控制电路,用于在复位控制信号和睡眠控制信号的控制下输出从传输门输出的数据信号; 以及用于反馈从信号控制电路输出的信号并且以睡眠模式保存数据的反馈电路。 MTCMOS锁存电路可以将由于按比例缩小到纳米级的元件引起的漏电流引起的功耗最小化,并且还通过使用具有低阈值电压的元件有助于逻辑电路的高速操作。