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11. 发明申请

US20140139775A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20140139775A1
公开(公告)日：2014-05-22
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki MIYAKE , Shunpei YAMAZAKI , Yoshifumi TANADA , Manabu SATO , Toshinari SASAKI , Kenichi OKAZAKI , Junichi KOEZUKA , Takuya MATSUO , Hiroshi MATSUKIZONO , Yosuke KANZAKI , Shigeyasu MORI
发明人： Hiroyuki MIYAKE , Shunpei YAMAZAKI , Yoshifumi TANADA , Manabu SATO , Toshinari SASAKI , Kenichi OKAZAKI , Junichi KOEZUKA , Takuya MATSUO , Hiroshi MATSUKIZONO , Yosuke KANZAKI , Shigeyasu MORI
IPC分类号： G02F1/1368 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

12. 发明申请

US20130270554A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130270554A1
公开(公告)日：2013-10-17
申请号：US13860879
申请日：2013-04-11
申请人： Masatoshi YOKOYAMA , Tsutomu MURAKAWA , Kenichi OKAZAKI , Masayuki SAKAKURA , Takuya MATSUO , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Yoshitaka YAMAMOTO
发明人： Masatoshi YOKOYAMA , Tsutomu MURAKAWA , Kenichi OKAZAKI , Masayuki SAKAKURA , Takuya MATSUO , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Yoshitaka YAMAMOTO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
摘要翻译：半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域，最靠近第二侧表面214b的一端314b。第一高电阻区域具有波纹状的侧面等。

13. 发明申请

US20130216926A1 SOLID OXIDE FUEL CELL SYSTEM 有权
标题翻译：固体氧化物燃料电池系统
公开(公告)号：US20130216926A1
公开(公告)日：2013-08-22
申请号：US13876934
申请日：2011-09-28
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/06
CPC分类号： H01M8/0606 , H01M8/04022 , H01M8/04268 , H01M8/04373 , H01M8/04776 , H01M8/0618 , H01M2008/1293 , Y02E60/50 , Y02E60/525
摘要： A solid oxide fuel cell system is disclosed. The solid oxide fuel cell system includes a cell stack having multiple adjacent fuel cells; a reformer that reforms raw gas and produces fuel gas supplied to the fuel cells; a combustion section that causes combustion of the fuel gas discharged from the fuel cells and heats the reformer with combustion heat of the fuel gas; an ignition device that ignites the combustion section; a combustion state confirmation device that senses that heating of the entire reformer has started using the advancement of flame transfer between fuel cells in the combustion section; and a controller programmed to start an operation of the system heating the reformer by using combustion heat from the combustion section and reaction heat from the partial oxidation reforming reaction (POX) in the reformer. During the period until the combustion state confirmation device senses that the heating of the entire reformer has started after the ignition device ignited the combustion section, the controller suppresses the amount of heat emitted by the partial oxidation reforming reaction in the reformer more than the amount of heat emitted after heating of the entire reformer has started.
摘要翻译：公开了一种固体氧化物燃料电池系统。固体氧化物燃料电池系统包括具有多个相邻燃料电池的电池堆; 改革原燃料和生产向燃料电池供应的燃料气体的改革者; 燃烧部，其使从燃料电池排出的燃料气体燃烧，并利用燃料气体的燃烧热加热重整器; 点燃燃烧部分的点火装置; 检测整个重整器的加热开始使用燃烧部中的燃料电池之间的火焰传递的燃烧状态确认装置; 以及控制器，被编程为开始通过使用来自燃烧部分的燃烧热量和重整器中部分氧化重整反应（POX）的反应热来加热重整器的系统的操作。在燃烧状态确认装置感测到在点火装置点燃燃烧部分之后开始整个重整器的加热的时间段期间，控制器抑制重整器中的部分氧化重整反应发出的热量大于加热整个重整器后发出的热量已经开始。

14. 发明申请

US20100331301A1 AZETIDINE COMPOUND AND PHARMACEUTICAL USE THEREOF 有权
标题翻译： AZETIDINE化合物及其药物用途
公开(公告)号：US20100331301A1
公开(公告)日：2010-12-30
申请号：US12780146
申请日：2010-05-14
申请人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
发明人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
IPC分类号： A61K31/4427 , C07D401/06 , C07D401/14 , C07D413/14 , A61K31/4439 , A61K31/496 , A61K31/5377 , A61K31/4545 , A61K31/553 , A61K31/551 , A61P37/00 , A61P29/00 , A61P19/10 , A61P35/00 , A61P19/08 , A61P19/02 , A61P17/06 , A61P1/00
CPC分类号： C07D401/06 , C07D401/14 , C07D405/14 , C07D409/14 , C07D413/14
摘要： Compounds of formula [I]: wherein each symbol is as defined in the description, or a pharmaceutically acceptable salts or solvates thereof.
摘要翻译：式[I]化合物：其中每个符号如说明书中所定义，或其药学上可接受的盐或溶剂化物。

15. 发明授权

US07714367B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07714367B2
公开(公告)日：2010-05-11
申请号：US11694467
申请日：2007-03-30
申请人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
发明人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/78621 , H01L27/1237 , H01L29/42384 , H01L29/49 , H01L29/66757
摘要： A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of: forming first and second semiconductor layers over a substrate, forming a first insulating film over the first and second semiconductor layers, forming first and second conductive films thereover, forming a first gate electrode having a stacked layer of the first and second conductive films, in which a portion of the first conductive film is exposed from the second conductive film, over the first semiconductor layer with the first insulating film interposed therebetween, forming a second insulating film over the first insulating film, forming third and fourth conductive films thereover, and forming a second gate electrode having a stacked layer of the third and fourth conductive films, in which a portion of the third conductive film is exposed from the fourth conductive film, over the second semiconductor layer with the first and second insulating films interposed therebetween.
摘要翻译：通过一次掺杂杂质可以简化制造步骤的半导体器件及其制造方法。半导体器件的制造方法包括以下步骤：在衬底上形成第一和第二半导体层，在第一和第二半导体层上形成第一绝缘膜，在其上形成第一和第二导电膜，形成具有将第一导电膜的一部分从第二导电膜露出的第一导电膜和第二导电膜的第一绝缘膜在第一绝缘膜之上形成第二绝缘膜，在其上形成第三和第四导电膜，并且形成第二栅电极，其具有第三导电膜和第四导电膜的堆叠层，其中第三导电膜的一部分从第四导电膜暴露在第二半导体层上，其间插入第一绝缘膜和第二绝缘膜。

16. 发明授权

US07276402B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07276402B2
公开(公告)日：2007-10-02
申请号：US11012171
申请日：2004-12-16
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法。根据本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜，向非晶硅膜中添加用于促进结晶的Ni等金属元素，进行热处理，使结晶非晶硅膜，使得在基板上形成结晶硅膜，通过含有机溶剂和氟化物的溶液进行热处理，除去形成在结晶硅膜表面的氧化硅膜，并照射激光或强力光结晶硅膜。

17. 发明授权

US07145210B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07145210B2
公开(公告)日：2006-12-05
申请号：US10941965
申请日：2004-09-16
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

18. 发明授权

US07087504B2 Method of manufacturing a semiconductor device by irradiating with a laser beam 有权
标题翻译：通过照射激光来制造半导体器件的方法
公开(公告)号：US07087504B2
公开(公告)日：2006-08-08
申请号：US10133588
申请日：2002-04-29
申请人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
发明人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/6708 , H01L21/67167 , H01L21/67213 , H01L29/66757 , H01L29/78675
摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.
摘要翻译：提供了一种用于制造其电特性几乎没有偏差的TFT的技术。在除去形成在半导体膜表面上的自然氧化物膜之后，通过进行具有有机物去除效果的氧化处理，形成清洁的氧化物膜来减少半导体膜的污染。通过使用在TFT的有源层中获得的半导体膜，可以获得其电特性几乎没有色散的TFT，并且可以提高电性能。此外，通过使用本发明的半导体制造装置，可以将生产率和生产量的劣化降低到最小。

19. 发明申请

US20060009015A1 Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus 有权
公开(公告)号：US20060009015A1
公开(公告)日：2006-01-12
申请号：US11221773
申请日：2005-09-09
申请人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
发明人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/6708 , H01L21/67167 , H01L21/67213 , H01L29/66757 , H01L29/78675
摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

20. 发明申请

US20050062044A1 Semiconductor device, method of manufacturing the same, and electronic device having the same 失效
标题翻译：半导体装置及其制造方法以及具有该半导体装置的电子装置
公开(公告)号：US20050062044A1
公开(公告)日：2005-03-24
申请号：US10941965
申请日：2004-09-16
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L29/76
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

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