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31. 发明授权

US09153703B2 Thin-film transistor and method of manufacturing same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09153703B2
公开(公告)日：2015-10-06
申请号：US12527622
申请日：2008-02-08
申请人： Nobuyuki Kaji , Ryo Hayashi , Hisato Yabuta , Katsumi Abe
发明人： Nobuyuki Kaji , Ryo Hayashi , Hisato Yabuta , Katsumi Abe
IPC分类号： H01L21/336 , H01L29/786 , H01L29/10
CPC分类号： H01L29/78696 , H01L29/105 , H01L29/7869
摘要： There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.
摘要翻译：提供了至少包括衬底，栅电极，栅极绝缘层，氧化物半导体层，源电极，漏电极和保护层的薄膜晶体管，其中氧化物半导体层是含有元素In，Ga和Zn中的至少一种，氧化物半导体层的栅电极侧载流子密度高于其保护层侧载流子密度，氧化物半导体层的膜厚为30nm±15 nm。

32. 发明授权

US08913398B2 Mount board and electronic device 有权
标题翻译：安装板和电子设备
公开(公告)号：US08913398B2
公开(公告)日：2014-12-16
申请号：US14016707
申请日：2013-09-03
申请人： Shinji Watanabe , Nobuhiro Mikami , Junya Sato , Kenichiro Fujii , Katsumi Abe , Atsumasa Sawada
发明人： Shinji Watanabe , Nobuhiro Mikami , Junya Sato , Kenichiro Fujii , Katsumi Abe , Atsumasa Sawada
IPC分类号： H05K7/00 , H05K3/00 , H01L23/00 , H05K1/02 , H05K1/18 , H05K3/46 , H05K3/32
CPC分类号： H05K1/18 , H01L24/18 , H01L24/24 , H01L24/82 , H01L2224/16225 , H01L2224/16227 , H01L2224/18 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1515 , H01L2924/15151 , H01L2924/19041 , H01L2924/19043 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H01L2924/3511 , H05K1/023 , H05K1/0271 , H05K1/0284 , H05K1/185 , H05K1/189 , H05K3/0014 , H05K3/32 , H05K3/4644 , H05K2201/0187 , H05K2201/0191 , H05K2201/0195 , H05K2201/09018 , H05K2201/09036 , H05K2201/09045 , H05K2201/09118 , H05K2201/09436 , H05K2201/10477 , H05K2201/10515 , H05K2201/1053 , H05K2201/10636 , H05K2201/10734 , H05K2203/1469 , H05K2203/302 , Y02P70/611 , H01L2924/00
摘要： An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.
摘要翻译：本发明的目的在于，当将半导体封装安装在弯曲的基板上时，可以抑制对半导体封装件施加的应力。在安装基板1中，将半导体封装20安装在其至少一部分上包括弯曲表面的弯曲板10上。弯曲板10包括设置在半导体封装20安装的弯曲表面部分的区域上并具有平坦的上表面的基座部分13a和设置在基座部分的平坦表面上的多个焊盘部分15a 13a。基座部分13a由绝缘材料形成。半导体封装20安装在焊盘部分15a上。

33. 发明授权

US08610695B2 Drive circuit and drive method of light emitting display apparatus 有权
标题翻译：发光显示装置的驱动电路及驱动方法
公开(公告)号：US08610695B2
公开(公告)日：2013-12-17
申请号：US13086226
申请日：2011-04-13
申请人： Hisae Shimizu , Katsumi Abe
发明人： Hisae Shimizu , Katsumi Abe
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.
摘要翻译：一种用于发光显示装置的驱动电路，包括具有发光装置的像素电路，所述发光装置用于发射基于所提供的电流确定的亮度的光和用于向所述发光装置提供电流的驱动晶体管，所述驱动电路包括阈值校正电路转换包括驱动晶体管的阈值电压的第二信号和数据电压，当包括数据电压的第一信号被输入到驱动晶体管的控制电极时，第二信号从驱动晶体管输出到第三信号，第三信号包括反转极性的阈值电压和数据电压或对应于数据电压的电压，以将转换的第三信号输出到像素电路。像素电路包括用于将第三信号提供给驱动晶体管的控制电极的开关。

34. 发明申请

US20120250424A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20120250424A1
公开(公告)日：2012-10-04
申请号：US13432465
申请日：2012-03-28
申请人： Masahiro YOSHIHARA , Naofumi Abiko , Katsumi Abe
发明人： Masahiro YOSHIHARA , Naofumi Abiko , Katsumi Abe
IPC分类号： G11C7/06
CPC分类号： G11C7/1006 , G11C7/106 , G11C7/1087 , G11C16/0483 , G11C16/26
摘要： A sense amplifier circuit is connected to a bit-line and senses and amplifies a signal read from a memory cell. A first data latch is connected to a sense amplifier via a first bus. A second data latch is connected to a second bus. A plurality of circuit groups are repeatedly provided in a first direction, each circuit group comprising one sense amplifier circuit and one first data latch. The second data latch is provided between the circuit groups and an input/output buffer.
摘要翻译：感测放大器电路连接到位线，并感测并放大从存储单元读取的信号。第一数据锁存器通过第一总线连接到读出放大器。第二数据锁存器连接到第二总线。在第一方向重复提供多个电路组，每个电路组包括一个读出放大器电路和一个第一数据锁存器。第二数据锁存器设置在电路组和输入/输出缓冲器之间。

35. 发明授权

US08247144B2 Photoreceptor for electrophotography 失效
标题翻译：电子照相感光体
公开(公告)号：US08247144B2
公开(公告)日：2012-08-21
申请号：US12524213
申请日：2008-01-24
申请人： Makoto Koike , Katsumi Abe , Atsushi Takesue
发明人： Makoto Koike , Katsumi Abe , Atsushi Takesue
IPC分类号： G03G5/06
CPC分类号： G03G5/0614 , G03G5/0521 , G03G5/0607 , G03G5/0616 , G03G5/062
摘要： An object of the invention is to provide a photoreceptor for electrophotography which has a low residual potential in an initial stage, is inhibited from increasing in residual potential, is prevented from decreasing in charge potential, and undergoes little fatigue deterioration even upon repeated use. The invention relates to a photoreceptor for electrophotography which has a photosensitive layer containing a cyclic phenol sulfide represented by the following general formula (1): and one or more charge-transporting agents each having an arylamino group in the molecule, and which has excellent durability.
摘要翻译：本发明的目的是提供一种用于电子照相的感光体，其在初始阶段具有低残留电位，被抑制增加残留电位，防止电荷电位降低，即使重复使用也几乎不会发生疲劳劣化。本发明涉及一种电子照相用感光体，其具有含有下述通式（1）表示的环状苯酚硫化物的感光层和分子内各具有芳基氨基的一种或多种电荷输送剂，其耐久性优异。

36. 发明授权

US08119924B2 Wiring board, packaging board and electronic device 失效
标题翻译：接线板，包装板和电子设备
公开(公告)号：US08119924B2
公开(公告)日：2012-02-21
申请号：US12295286
申请日：2007-03-30
申请人： Katsumi Abe , Kenichiro Fujii , Atsumasa Sawada
发明人： Katsumi Abe , Kenichiro Fujii , Atsumasa Sawada
IPC分类号： H05K1/00
CPC分类号： H05K1/0271 , H01L23/49822 , H01L23/4985 , H01L23/562 , H01L2224/05022 , H01L2224/05573 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/16152 , H01L2924/3511 , H05K1/0281 , H05K1/189 , H05K3/4614 , H05K3/4691 , H05K2201/0187 , H05K2201/10674 , H05K2201/2009 , H05K2203/302 , Y10T428/24777 , H01L2924/00 , H01L2224/05599
摘要： Stress concentration at the connecting portion of the electronic component and the curved board and the area around the connecting portion is suppressed. In a flexible wiring board, insulation layers (11, 13) and wiring layers (12, 15) are piled up alternately and wiring layers (12, 15) are via-connected each other. The board comprises reinforced area (10a) reinforced against external stress, bending area (10c) bending easier than the reinforced area (10a) by external stress, and a stress relaxation area (10b) provided in area between the reinforced area (10a) and the bending area (10c), bending easier than the reinforced area (10a) but not easier than the bending area (10c) by the external stress, and relaxing the stress carried from the bending area (10c) to the reinforced area (10a).
摘要翻译：电子部件和弯曲板的连接部的应力集中以及连接部周围的区域被抑制。在柔性布线板中，绝缘层（11,13）和布线层（12,15）交替堆叠，并且布线层（12,15）彼此通孔连接。所述板包括加强区域（10a），抵抗外部应力增强，弯曲区域（10c）比外部应力比加强区域（10a）弯曲得更容易;以及应力松弛区域（10b），设置在加强区域（10a）和所述弯曲区域（10c）比所述加强区域（10a）弯曲变得容易，但是通过外部应力不易弯曲区域（10c），并且缓和从所述弯曲区域（10c）向所述加强区域（10a）承受的应力，。

37. 发明申请

US20110092016A1 METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
标题翻译：处理半导体元件的方法
公开(公告)号：US20110092016A1
公开(公告)日：2011-04-21
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/26 , H01L21/34
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

38. 发明申请

US20110024741A1 INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES 有权
标题翻译：集成电路利用非晶态氧化物
公开(公告)号：US20110024741A1
公开(公告)日：2011-02-03
申请号：US12882404
申请日：2010-09-15
申请人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/26
CPC分类号： H01L29/7869
摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
摘要翻译：提供了使用透明氧化膜的半导体器件和电路。具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

39. 发明授权

US07863611B2 Integrated circuits utilizing amorphous oxides 有权
标题翻译：采用无定形氧化物的集成电路
公开(公告)号：US07863611B2
公开(公告)日：2011-01-04
申请号：US11269646
申请日：2005-11-09
申请人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L31/20
CPC分类号： H01L29/7869
摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
摘要翻译：提供了使用透明氧化膜的半导体器件和电路。具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

40. 发明申请

US20100291480A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY 审中-公开
标题翻译：电子感光体
公开(公告)号：US20100291480A1
公开(公告)日：2010-11-18
申请号：US12840679
申请日：2010-07-21
申请人： Katsumi ABE , Atsushi Takesue , Takehiro Nakajima , Makoto Koike , Shinya Nagai
发明人： Katsumi ABE , Atsushi Takesue , Takehiro Nakajima , Makoto Koike , Shinya Nagai
IPC分类号： G03G5/04
CPC分类号： G03G5/102 , G03G5/0564 , G03G5/0614 , G03G5/0679 , G03G5/0681 , G03G5/0685 , G03G5/0696
摘要： An object of the present invention is to provide an electrophotographic photosensitive body having improved electrophotographic characteristics such as sensitivity and residual potential and also having excellent durability. The present invention provides an electrophotographic photosensitive body having a layer containing at least one specific p-terphenyl compound and at least one polycarbonate resin represented by the general formula (I): in a mass ratio of the p-terphenyl compound to the polycarbonate resin within the range of 2:8 to 7:3.
摘要翻译：本发明的目的是提供一种电子照相感光体，其具有改善的电子照相特性，例如灵敏度和残留电位，并且还具有优异的耐久性。本发明提供一种电子照相感光体，其具有含有至少一种特定对三联苯化合物的层和至少一种由通式（I）表示的聚碳酸酯树脂：以对三联苯化合物与聚碳酸酯树脂的质量比范围为2：8至7：3。

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