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31. 发明授权

US06346761B1 Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes 失效
标题翻译：能够抑制由非谐波高阶模式引起的寄生响应的声表面波器件
公开(公告)号：US06346761B1
公开(公告)日：2002-02-12
申请号：US09492078
申请日：2000-01-27
申请人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
发明人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
IPC分类号： H01L4104
CPC分类号： H03H9/1452 , H03H9/02818
摘要： A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.
摘要翻译：一种表面声波装置，包括压电基片和形成在压电基片的平面上的叉指换能器，并具有第一和第二汇流条，连接到第一汇流条的第一多个电极指，以及第二多个的电极指连接到第二汇流条。叉指式换能器的第一和第二多个电极指具有交替布置第一和第二多个电极指的电极交叉区域。第一和第二母线之间的每个边界以及第一和第二多个电极指的光栅区域被布置成使得边界基本上不平行，并且由叉指换能器激发的表面声波的透射方向。

32. 发明授权

US5814917A Surface acoustic wave equipment 失效
标题翻译：表面声波设备
公开(公告)号：US5814917A
公开(公告)日：1998-09-29
申请号：US676683
申请日：1996-07-10
申请人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
发明人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02559 , H03H9/14538
摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.
摘要翻译：铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

33. 发明申请

US20140018126A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND MOBILE PHONE 有权
标题翻译：半导体器件，其制造方法和移动电话
公开(公告)号：US20140018126A1
公开(公告)日：2014-01-16
申请号：US14008240
申请日：2012-03-08
申请人： Kengo Asai , Atsushi Isobe
发明人： Kengo Asai , Atsushi Isobe
IPC分类号： H01L41/332 , H04B1/40 , H01L41/09
CPC分类号： H03H9/0542 , H01L23/3192 , H01L23/36 , H01L23/373 , H01L27/0629 , H01L29/4175 , H01L29/41758 , H01L29/66659 , H01L29/7835 , H01L41/0926 , H01L41/332 , H01L2924/0002 , H03F3/19 , H03F3/211 , H03F2200/171 , H03F2200/294 , H03F2200/451 , H03H9/0571 , H03H9/706 , H04B1/036 , H04B1/40 , H01L2924/00
摘要： A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
摘要翻译：在发送滤波器和接收滤波器的情况下，能够通过减小给发送滤波器和接收滤波器的功率放大器的热量的影响来保持发射滤波器和接收滤波器的滤波器特性的技术。与移动电话代表的移动通信设备中的功率放大器一起形成在同一半导体衬底上。在包括形成有LDMOSFET的区域AR1的半导体基板1S的整个区域上的钝化膜PAS上设置有高导热性膜HCF和形成有薄膜压电体波谐振器BAW的区域AR2。主要在LDMOSFET中产生的热量通过形成在半导体衬底1S的表面上的高导热膜HCF在所有方向上被有效地消散。

34. 发明授权

US5604059A Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure 失效
标题翻译：具有适于在感光膜上形成精细图案的相移图案的掩模结构以及使用这种掩模结构制造固态器件的方法
公开(公告)号：US5604059A
公开(公告)日：1997-02-18
申请号：US290603
申请日：1994-08-15
申请人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
发明人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
IPC分类号： G03F1/00 , G03F1/30 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/30 , H03H3/08 , G03F7/12
CPC分类号： G03F7/70466 , G03F1/30 , G03F1/50 , G03F7/2002
摘要： A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.
摘要翻译：掩模结构具有形成在一个透明支撑板上的两个（或多个）装置图案组。每个设备图案具有透明部分图案。装置图案组中的一个或两个设置有用于改进光刻中的分辨率的相移图案。确定每个设备图案组中的每个设备图案中的每个设备图案中的透明部分图案，使得由设备图案组之一保持的每个透明部分图案适于与由另一设备图案保持的一个透明部分图案组合通过掩模结构将曝光光束透射两次或更多次。可以通过使用掩模结构来制造固体器件，其中通过掩模结构将基片上的感光膜暴露于曝光光束，通过掩模结构与掩模结构之间的相对位置重复两次或更多次衬底被改变。

35. 发明申请

US20090295508A1 ACOUSTIC WAVE DEVICE AND HIGH-FREQUENCY FILTER USING THE SAME 失效
标题翻译：声波设备和高频滤波器使用相同
公开(公告)号：US20090295508A1
公开(公告)日：2009-12-03
申请号：US12473755
申请日：2009-05-28
申请人： Atsushi ISOBE , Kengo Asai
发明人： Atsushi ISOBE , Kengo Asai
IPC分类号： H03H9/64
CPC分类号： H03H9/0222
摘要： Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5≦hr/λ≦8.5% is obtained.
摘要翻译：边界声波装置既紧凑又具有优异的温度稳定性。然而，这些器件具有不能提高Q值的缺点，并且需要高成本的薄膜技术。本发明提供了具有优异的Q值和低成本的弹性边界波装置。包括其主要成分为厚度为h m的铝和短路反射器（厚度hr）的薄膜和电极指期为λ的IDT的边界声波装置被图案化到θYX-LN单晶压电基板; 并且在该梳状电极和反射器上形成具有厚度h1的氧化硅膜和厚度为h2的氮化铝膜6，其中：2.5hr /λ

36. 发明授权

US09299914B2 Semiconductor device, manufacturing method of the same, and mobile phone 有权
标题翻译：半导体装置及其制造方法以及手机
公开(公告)号：US09299914B2
公开(公告)日：2016-03-29
申请号：US14008240
申请日：2012-03-08
申请人： Kengo Asai , Atsushi Isobe
发明人： Kengo Asai , Atsushi Isobe
IPC分类号： H03H9/70 , H01L41/332 , H01L27/06 , H04B1/036 , H01L23/31 , H03H9/05 , H01L41/09 , H04B1/40 , H01L23/36 , H01L29/417 , H01L29/66 , H01L29/78
CPC分类号： H03H9/0542 , H01L23/3192 , H01L23/36 , H01L23/373 , H01L27/0629 , H01L29/4175 , H01L29/41758 , H01L29/66659 , H01L29/7835 , H01L41/0926 , H01L41/332 , H01L2924/0002 , H03F3/19 , H03F3/211 , H03F2200/171 , H03F2200/294 , H03F2200/451 , H03H9/0571 , H03H9/706 , H04B1/036 , H04B1/40 , H01L2924/00
摘要： A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
摘要翻译：在发送滤波器和接收滤波器的情况下，能够通过减小给发送滤波器和接收滤波器的功率放大器的热量的影响来保持发射滤波器和接收滤波器的滤波器特性的技术。与移动电话代表的移动通信设备中的功率放大器一起形成在同一半导体衬底上。在包括形成有LDMOSFET的区域AR1的半导体基板1S的整个区域上的钝化膜PAS上设置有高导热性膜HCF和形成有薄膜压电体波谐振器BAW的区域AR2。主要在LDMOSFET中产生的热量通过形成在半导体衬底1S的表面上的高导热膜HCF在所有方向上被有效地消散。

37. 发明授权

US07994878B2 Acoustic wave device and high-frequency filter using the same 失效
标题翻译：声波装置和高频滤波器使用相同
公开(公告)号：US07994878B2
公开(公告)日：2011-08-09
申请号：US12473755
申请日：2009-05-28
申请人： Atsushi Isobe , Kengo Asai
发明人： Atsushi Isobe , Kengo Asai
IPC分类号： H03H9/00 , H03H9/15
CPC分类号： H03H9/0222
摘要： Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5≦hr/λ≦8.5% is obtained.
摘要翻译：边界声波装置既紧凑又具有优异的温度稳定性。然而，这些器件具有不能提高Q值的缺点，并且需要高成本的薄膜技术。本发明提供了具有优异的Q值和低成本的弹性边界波装置。包括其主要成分为厚度为hm的铝的膜和短路反射器（厚度hr）和电极指期为λ的IDT的边界声波装置被图案化到θYX-LN单晶的表面上压电基板; 并且在该梳状电极和反射体上形成厚度为h1的氧化硅膜和厚度为h2的氮化铝膜6，其中：2.5＆lt; lE; hr /λ＆nlE; 8.5％。

38. 发明申请

US20070120623A1 Surface acoustic wave device and communication terminal using the same 失效
标题翻译：表面声波装置和通信终端使用相同
公开(公告)号：US20070120623A1
公开(公告)日：2007-05-31
申请号：US11514229
申请日：2006-09-01
申请人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
发明人： Kazuyuki Sakiyama , Kengo Asai , Atsushi Isobe , Kunio Matsumoto , Shinichi Fujiwara
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/02574 , H03H9/02834
摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.
摘要翻译：本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极布置在压电基板的表面上。叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。

39. 发明授权

US07962064B2 Toner container and image forming apparatus comprising the same 有权
标题翻译：调色剂容器和包含该调色剂容器的图像形成装置
公开(公告)号：US07962064B2
公开(公告)日：2011-06-14
申请号：US12727002
申请日：2010-03-18
申请人： Kengo Asai
发明人： Kengo Asai
IPC分类号： G03G15/08
CPC分类号： G03G15/0872 , G03G15/0863 , G03G15/087 , G03G15/0881 , G03G2215/0668 , G03G2215/0695
摘要： A hollow cylindrical cap is rotatably attached to a container body opening provided in one end of a hollow cylindrical container body. A seal member around the container body opening forms a seal between the container body and the cap. Once the cap is attached to the container body, pressing chips are circumferentially slidably engaged with a flange, and the seal member is pressure-sealed to a pressure-seal portion. A toner container identification is contiguous with the rear edge of one of the pressing chips. The toner container identification is formed by denting one part of the cap so its outer surface radially protrudes outward, and has a predetermined cross-section.
摘要翻译：中空的圆柱形盖可旋转地附接到设置在中空圆柱形容器主体的一端的容器主体开口。围绕容器主体开口的密封构件在容器主体和盖之间形成密封。一旦盖子附接到容器主体，按压芯片与凸缘周向地可滑动地接合，并且密封构件被压力密封到压力密封部分。调色剂容器识别与其中一个按压芯片的后边缘相邻。调色剂容器识别是通过使盖的一部分凹陷而形成的，使得其外表面向外径向突出并具有预定的横截面。

40. 发明申请

US20060206126A1 Blade for use in corneal surgery and corneal surgical apparatus having the same 审中-公开
标题翻译：用于角膜手术的刀片和具有其的角膜手术装置
公开(公告)号：US20060206126A1
公开(公告)日：2006-09-14
申请号：US11344145
申请日：2006-02-01
申请人： Masahiro Sugimura , Kengo Asai
发明人： Masahiro Sugimura , Kengo Asai
IPC分类号： A61F9/00
CPC分类号： A61F9/0133
摘要： A blade for used in corneal surgery for incising and separating a corneal epithelium into a flap shape, the blade includes: an edge tip portion including a distal end and two upper and lower edge tip surfaces. An angle formed between the two edge tip surfaces is not smaller than 60° and smaller than 140°, and a height of the edge tip portion is not smaller than 3 μm.
摘要翻译：一种用于角膜手术切割和分离角膜上皮成瓣状的刀片，所述刀片包括：包括远端和两个上边缘和下边缘末端表面的边缘末端部分。形成在两个边缘端面之间的角度不小于60°并且小于140°，并且边缘尖端部分的高度不小于3μm。

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