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31. 发明申请

US20050157219A1 Terbium type paramagnetic garnet single crystal and magneto-optical device 失效
标题翻译：铽型顺磁石榴石单晶和磁光器件
公开(公告)号：US20050157219A1
公开(公告)日：2005-07-21
申请号：US10494292
申请日：2003-09-17
申请人： Takenori Sekijima , Mikio Geho
发明人： Takenori Sekijima , Mikio Geho
IPC分类号： C30B1/10 , C30B13/00 , C30B29/28 , G02F1/135
CPC分类号： C30B13/34 , C30B13/24 , C30B15/00 , C30B29/28 , H01F10/24
摘要： The terbium type paramagnetic garnet single crystal with such characteristics as a high Faraday effect and a high light transmission factor even in a visible range has a high Verdet constant. The magneto-optical device contains the terbium type paramagnetic garnet single crystal. The terbium type paramagnetic garnet single crystal contains at least terbium, at least one element of aluminum and gallium, a part of the terbium being replaced by at least one element of cerium and praseodymium.
摘要翻译：具有高法拉第效应和高透光率的特性的铽型顺磁性石榴石单晶即使在可见光范围内也具有较高的Verdet常数。磁光装置包含铽型顺磁性石榴石单晶。铽型顺磁性石榴石单晶至少含有铽，铝和镓的至少一种元素，铽的一部分被铈和镨的至少一种元素代替。

32. 发明授权

US06902617B2 Method of welding single crystals 有权
标题翻译：单晶焊接方法
公开(公告)号：US06902617B2
公开(公告)日：2005-06-07
申请号：US10397050
申请日：2003-03-24
申请人： Jürgen Betz
发明人： Jürgen Betz
IPC分类号： B23K26/34 , C30B11/00 , C30B13/00 , C30B19/00 , F01D5/00 , C30B25/12 , C30B25/14
CPC分类号： F01D5/005 , B23K26/32 , B23K26/342 , B23K35/365 , B23K2101/001 , B23K2103/02 , B23K2103/26 , B23K2103/50 , B23P6/007 , C30B11/00 , C30B13/00 , C30B19/00 , C30B29/52 , Y10S117/903 , Y10S117/904 , Y10S117/905 , Y10T428/12931
摘要： A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimized.
摘要翻译：提供单晶焊接方法，用于通过能量束（4）在单晶基板（3）的表面（2）上制造单晶区域（1）。单晶焊接方法包括：通过用能量束（4）熔化涂层材料（5）并熔化表面层（5）来提供涂层材料（5），形成熔体（6） 71）由能量束（4）构成的单晶衬底（3）。在这种情况下，能量束（4）中的能量分布的特征（8）被设定为使得从熔体进入单晶衬底（3）的横向热流（H 1 H 1））最小化。

33. 发明授权

US6090199A Continuous melt replenishment for crystal growth 有权
标题翻译：连续熔融补充晶体生长
公开(公告)号：US6090199A
公开(公告)日：2000-07-18
申请号：US304284
申请日：1999-05-03
申请人： Richard L. Wallace, Jr. , Emanuel M. Sachs , Jennifer Martz
发明人： Richard L. Wallace, Jr. , Emanuel M. Sachs , Jennifer Martz
IPC分类号： C30B15/34 , C30B15/02 , C30B29/06 , C30B29/64 , C30B13/00
CPC分类号： C30B15/02 , Y10T117/1044 , Y10T117/1048
摘要： The invention features a method of continuous crystalline growth. A granular source material is introduced into a hopper. A volume of the granular source material exiting the hopper is disposed on a translationally moving belt. The volume of the granular source material forms an angle of repose with the moving belt. The granular source material disposed on the moving belt is continuously fed into a crucible comprising a melt of the granular source material at a rate based on the angle of repose, the speed of the belt, and the size of the opening of the hopper. A crystalline ribbon is continuously grown by solidifying the melt.
摘要翻译：本发明的特征在于连续结晶生长的方法。将粒状原料引入料斗。离开料斗的颗粒状原料的体积设置在平移运动的带上。颗粒状原料的体积与移动带形成休止角。设置在移动带上的颗粒源材料以基于休止角，带速度和料斗开口尺寸的速率连续地供给到包括颗粒源材料的熔体的坩埚中。通过使熔体固化连续生长结晶带。

34. 发明授权

US6024792A Method for producing monocrystalline structures 失效
标题翻译：单晶结构的制造方法
公开(公告)号：US6024792A
公开(公告)日：2000-02-15
申请号：US26782
申请日：1998-02-20
申请人： Wilfried Kurz , Werner Gaumann , Hans-Werner Bieler , Jean-Daniel Wagniere , Hansjakob Rusterholz
发明人： Wilfried Kurz , Werner Gaumann , Hans-Werner Bieler , Jean-Daniel Wagniere , Hansjakob Rusterholz
IPC分类号： C30B11/00 , C30B13/00 , C30B13/24 , C30B25/04
CPC分类号： B22F3/1055 , B23K26/32 , B23K26/34 , B23K35/004 , B23K35/30 , B23K35/3033 , B23K35/3046 , C30B11/00 , C30B13/00 , C30B13/24 , C30B29/52 , B23K2201/001 , B23K2203/02 , B23K2203/08 , B23K2203/26 , B23K2203/50 , Y02P10/295 , Y10S117/904 , Y10S4/904
摘要： In the method for manufacturing monocrystalline structures, parts or workpieces of metallic super-alloys on substrates with a monocrystalline structure or monocrystalline structures, the surface of the substrate is melted with an energy beam of high energy density from an energy source. The material which is to be introduced into the monocrystalline structure is supplied to the melted region of the substrate. The supplied material is completely melted. The energy input with the energy beam is regulated and/or controlled in such a manner that the speed of solidification and the temperature gradient lie in the dendritic crystalline region in the GV diagram, outside the globulitic region.
摘要翻译：在具有单晶结构或单晶结构的衬底上制造单晶结构，金属超合金的零件或工件的方法中，用来自能量源的能量密度高的能量束熔化衬底的表面。要引入单晶结构的材料被供应到基板的熔化区域。所供应的材料完全熔化。以能量束的能量输入被调节和/或控制，使得凝固速度和温度梯度位于球状区域外的GV图中的树枝状结晶区域。

35. 发明授权

US5897705A Process for the production of an epitaxially coated semiconductor wafer 失效
标题翻译：用于制造外延涂覆的半导体晶片的方法
公开(公告)号：US5897705A
公开(公告)日：1999-04-27
申请号：US630883
申请日：1996-04-02
申请人： Wolfgang Siebert , Erwin-Peter Mayer
发明人： Wolfgang Siebert , Erwin-Peter Mayer
IPC分类号： C30B29/06 , C30B13/00 , C30B33/00 , C30B33/08 , H01L21/20 , H01L21/205 , H01L21/208 , H01L21/322 , H01L21/329 , H01L29/47 , H01L29/872 , C30B13/10
CPC分类号： C30B29/06 , C30B13/00 , C30B33/00
摘要： A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.
摘要翻译：制造外延涂覆的半导体晶片的方法由具有正面和背面的单晶硅的衬底晶片组成，具有外延沉积在衬底晶片前侧的至少一层半导体材料，其通过无坩埚区域拉制生产重掺杂硅单晶而获得，制造具有从单晶抛光的前侧的衬底晶片，并且在衬底晶片的正面上沉积至少一个半导体材料外延层。

36. 发明授权

US5893948A Method for forming single silicon crystals using nucleation sites 失效
标题翻译：使用成核位点形成单晶硅晶体的方法
公开(公告)号：US5893948A
公开(公告)日：1999-04-13
申请号：US630955
申请日：1996-04-05
申请人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
发明人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
IPC分类号： H01L31/04 , C30B13/00 , H01L21/20 , H01L21/336 , H01L29/786 , C30B13/06
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/902
摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.
摘要翻译：本发明提供了一种在衬底上形成多个单晶硅晶体的方法。该方法在衬底上形成多个成核位点。在覆盖多个硅成核位置的衬底上形成非晶硅层。通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。多个单晶硅晶体中的每一个对应于多个成核位点中的一个。

37. 发明授权

US5817173A Method for making spherical crystals 失效
标题翻译：制作球状晶体的方法
公开(公告)号：US5817173A
公开(公告)日：1998-10-06
申请号：US656327
申请日：1996-06-11
申请人： Josuke Nakata
发明人： Josuke Nakata
IPC分类号： C30B29/60 , C30B11/00 , C30B13/00 , C30B29/66 , C30B30/08 , H01L27/14 , C30B29/62
CPC分类号： C30B11/00 , C30B13/00 , C30B29/60
摘要： The present invention relates to a method for forming crystal substrates on which can be easily formed spherical crystals which have superior crystal structure and little defect in shape. The present invention also relates to a method for making crystal substrates on which can be easily formed spherical crystals which have little defect in shape and from which impurities have been removed. Projections are formed integrally from a semiconductor crystal base, and flow regulating film is formed to cover the entire outer surface of the crystal base and a base portion of the projections. A heating beam is applied to the tips of the projections, and the end portions of the projections are melted. The surface tension of the melt and the melt regulation by the flow regulating film act to solidify the melt in a spherical shape, thus forming a spherical crystal.
摘要翻译： PCT No.PCT / JP95 / 01595 Sec。 371日期：1996年6月11日 102（e）日期1996年6月11日PCT提交1995年8月7日PCT公布。公开号WO96 / 15298 日期1996年5月23日本发明涉及一种形成晶体基板的方法，其中可以容易地形成具有优异的晶体结构和形状缺陷的球形晶体。本发明还涉及一种制造晶体基板的方法，其上可以容易地形成几乎没有形状缺陷并且杂质被去除的球形晶体。突起从半导体晶体基体一体地形成，并且形成流动调节膜以覆盖晶体基底的整个外表面和突起的基部。将加热梁施加到突起的尖端，并且突起的端部熔化。熔体的表面张力和流动调节膜的熔体调节作用使熔体固化为球形，从而形成球状晶体。

38. 发明授权

US5688321A Apparatus for producing a silicon single crystal by a float-zone method 失效
标题翻译：用于通过浮法法生产硅单晶的装置
公开(公告)号：US5688321A
公开(公告)日：1997-11-18
申请号：US636348
申请日：1996-04-23
申请人： Masanori Kimura , Hirotoshi Yamagishi
发明人： Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B13/30 , C30B13/00 , C30B13/26 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B13/26 , Y10T117/10 , Y10T117/1016
摘要： A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described. The growing single crystal ingot is post-heated by a heat reflector near the molten zone.
摘要翻译：一种通过浮区法制造单晶硅的方法，包括以下步骤：提供平均晶粒长度为10-1000μm的多晶硅棒; 加热多晶硅棒的一部分以形成熔融区，同时向熔融区施加300至1000高斯的磁场; 并且使熔融区域通过多晶硅棒的长度，从而通过浮动区域方法的一次通过区域将多晶硅棒转变成硅单晶锭。还描述了一种用于将方法减少到实践中的装置。生长中的单晶锭通过靠近熔融区的热反射器进行后加热。

39. 发明授权

US5667585A Method for the preparation of wire-formed silicon crystal 失效
标题翻译：线形硅晶体的制备方法
公开(公告)号：US5667585A
公开(公告)日：1997-09-16
申请号：US579350
申请日：1995-12-27
申请人： Tsuguo Fukuda , Susumu Sakaguchi , Tadashi Kamioka , Toru Yamada , Teruhiko Hirasawa
发明人： Tsuguo Fukuda , Susumu Sakaguchi , Tadashi Kamioka , Toru Yamada , Teruhiko Hirasawa
IPC分类号： C30B13/00 , C30B15/00 , C30B28/08
CPC分类号： C30B29/06 , C30B13/00 , C30B15/00
摘要： Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.
摘要翻译：提出了一种低成本的制备直径为1mm以下的硅线状晶体的低成本方法，其中通过高频感应加热在一端部将垂直保持的硅起始棒熔化，使晶种与熔融部分接触，然后晶体和起始硅棒以受控的高频功率输入以受控的速度在垂直方向上拉开，使得由晶种吸收的硅熔体被固化并结晶成线的形式。

40. 发明授权

US5556791A Method of making optically fused semiconductor powder for solar cells 失效
标题翻译：制造太阳能电池用光熔半导体粉末的方法
公开(公告)号：US5556791A
公开(公告)日：1996-09-17
申请号：US368229
申请日：1995-01-03
申请人： Gary D. Stevens , Francois A. Padovani
发明人： Gary D. Stevens , Francois A. Padovani
IPC分类号： B22F1/00 , C30B13/00 , H01L31/04 , H01L31/18
CPC分类号： C30B29/06 , C30B13/00 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/90 , Y10T117/102
摘要： A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要翻译：一种用于使用光学炉（30）形成用于太阳能电池的半导体颗粒（42）的方法和装置。动力半导体原料的均匀质量堆（26）几乎被瞬时光学融合，以限定高纯度半导体颗粒而没有氧化。高强度光能被引导并聚焦到由其下方的输送介质（16）前进的半导体原料桩（26）。半导体原料桩（26）至少部分地熔化并熔化以形成单个半导体颗粒（42），其可以稍后通过隔板（50）从耐火层（18）分离，优选由二氧化硅组成。设备（10）和过程是自动化的，提供高产量以产生用于实现高效率太阳能电池的均匀质量，高质量的球体。该装置是高能效的，由此可以容易且快速地建立工艺参数。

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