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    • 34. 发明授权
    • Method to reduce wedge effects in molded trigonal tips
    • 减少模制三角尖端楔形效应的方法
    • US08701211B2
    • 2014-04-15
    • US12868601
    • 2010-08-25
    • Nicolae Moldovan
    • Nicolae Moldovan
    • G01Q60/38G01Q70/08G01Q70/10
    • G01Q70/10B29C33/3857B29C33/424G01Q70/16
    • A method of producing sharp tips useful for scanning probe microscopy and related applications is described. The tips are formed by deposition into a mold(s) formed in a sacrificial crystalline semiconductor substrate with an exposed {311} surface which has been etched with a crystallographic etchant to form a 3-sided, trihedral or trigonal pyramidal mold(s) or indentation(s). The resultant tips, when released from the sacrificial mold material or substrate, are typically formed in the shape of a trigonal pyramid or a tetrahedron. Another embodiment involves starting with a {100} surface and the formation of two tips on opposite ends of a wedge at trigonal or trihedral points of the wedge. These tips are less susceptible to the tip wedge effect typical of tips formed using known methods.
    • 描述了可用于扫描探针显微镜和相关应用的尖锐尖端的方法。 尖端通过沉积到形成于牺牲晶体半导体衬底中的模具中而形成,所述模具具有暴露的{311}表面,其已用结晶学蚀刻剂蚀刻以形成三面体,三面体或三角锥体模具或 缩进(s)。 当从牺牲模具材料或基底释放时,所得到的尖端通常形成为三角锥体或四面体的形状。 另一个实施例涉及从{100}表面开始并且在楔的三角形或三角形点处在楔形物的相对端上形成两个尖端。 这些尖端对于使用已知方法形成的尖端的典型的尖端楔形效应较不敏感。
    • 37. 发明授权
    • Production scale fabrication method for high resolution AFM tips
    • 高分辨率AFM提示的生产规模制作方法
    • US08474061B2
    • 2013-06-25
    • US13608396
    • 2012-09-10
    • Guy CohenMark C. ReuterBrent A. WacaserMaha M. Khayyat
    • Guy CohenMark C. ReuterBrent A. WacaserMaha M. Khayyat
    • G01Q60/38B82Y40/00
    • G01Q70/12G01Q60/38
    • A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
    • 提供了一种制造高分辨率原子力显微镜(AFM)尖端的方法,其包括在每个AFM尖端的半导体金字塔的顶点处生长的单个半导体纳米线。 生长的半导体纳米线具有可控直径和高纵横比,而没有从半导体纳米线的尖端到其基底的显着锥形化。 该方法包括提供包括半导体悬臂的AFM探针,该半导体悬臂具有从所述半导体悬臂的表面向上延伸的半导体金字塔。 半导体金字塔有顶点。 在AFM探针上形成图案化的氧化物层。 图案化氧化物层具有暴露半导体金字塔的顶点的开口。 使用未氧化的Al种子材料作为纳米线生长的催化剂,在半导体金字塔的暴露的顶点上生长单个半导体纳米线。