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41. 发明授权

US07687380B2 Laser annealing method and laser annealing device 失效
标题翻译：激光退火方法和激光退火装置
公开(公告)号：US07687380B2
公开(公告)日：2010-03-30
申请号：US12055401
申请日：2008-03-26
申请人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
发明人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/268
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0259 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/67115
摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to these miconductor film by which a temperature holding layer comprising water vapor is formed on the surface of these miconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
摘要翻译：为了促进半导体膜的激光退火的效果，在向这些半导体膜的表面上形成有水蒸汽的温度保持层的这些半导体膜照射激光的气氛中有意地包含水分可以有效地进行激光照射和激光退火操作。

42. 发明授权

US07674663B2 Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device 有权
标题翻译：照射激光的方法，激光照射系统以及半导体器件的制造方法
公开(公告)号：US07674663B2
公开(公告)日：2010-03-09
申请号：US10678083
申请日：2003-10-06
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0732 , B23K26/0736 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： In a manufacturing process of a semiconductor device, when harmonic of CW laser is irradiated to a semiconductor film with relatively scanning the harmonic, several long crystal grains extending in a scanning direction are formed. In the scanning direction, thus formed semiconductor film is substantially close to a single crystal in characteristic. However, the output of the harmonic of the CW laser is small to cause a low annealing efficiency. In the present invention, aid for the output is performed by irradiating second harmonic of CW laser and a fundamental wave of CW laser at the same time to the same portion. In general, the fundamental wave has a wavelength band around 1 μm, and is not well absorbed in a semiconductor film. When the harmonic with a wavelength of visible light or a shorter wavelength than visible light is irradiated at the same time as the fundamental wave to a semiconductor film, the annealing efficiency is remarkably increased since the fundamental wave is well absorbed in the semiconductor film melted by the harmonic.
摘要翻译：在半导体器件的制造过程中，当以相对扫描谐波的方式将CW激光的谐波照射到半导体膜时，形成沿扫描方向延伸的若干长晶粒。在扫描方向上，这样形成的半导体膜基本上接近单晶的特性。然而，CW激光器的谐波的输出小，导致退火效率低。在本发明中，通过将CW激光的二次谐波和CW激光的基波同时照射到同一部分来进行输出的辅助。通常，基波具有大约1μm的波长带，并且在半导体膜中不能良好地被吸收。当与半导体膜同时照射具有可见光或可见光波长的波长的谐波与基波同时照射时，退火效率显着增加，因为在被半导体膜熔化的半导体膜中良好地吸收了基波谐波。

43. 发明授权

US07670935B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07670935B2
公开(公告)日：2010-03-02
申请号：US11354885
申请日：2006-02-16
申请人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
发明人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L23/544 , H01L27/1285 , H01L29/42384 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.
摘要翻译：在激光照射之前形成岛状半导体膜和标记。标记用作位置参考，以便不在衬底表面内的整个半导体上执行激光照射，而是在至少不可缺少的部分上进行最小结晶。由于可以减少激光结晶所需的时间，可以提高基板处理速度。通过将上述结构应用于传统的SLS方法，提供了一种用于在传统SLS方法中解决这种问题的方法，即基板处理效率不足。

44. 发明授权

US07662677B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07662677B2
公开(公告)日：2010-02-16
申请号：US09842797
申请日：2001-04-27
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A semiconductor device is fabricated by forming a first crystalline region by irradiating a laser beam to a first region of an amorphous semiconductor film by relatively moving the laser beam with respect to the first region of the amorphous semiconductor film. A second crystalline region is formed by irradiating the laser beam to a second region of the amorphous semiconductor film including a portion of the first crystalline region by relatively moving the laser beam with respect to the second region of the amorphous semiconductor film. The wavelength of the laser beam falls in a range of 370 nm through 650 nm. In general, crystalline performance of the first crystalline region, the second crystalline region, and a region of overlap between the first crystalline region and the second crystalline region are the same.
摘要翻译：通过相对于非晶半导体膜的第一区域相对地移动激光束，通过将激光束照射到非晶半导体膜的第一区域来形成第一晶体区域来制造半导体器件。通过相对于非晶半导体膜的第二区域相对移动激光束，将激光束照射到包括第一晶体区域的一部分的非晶半导体膜的第二区域来形成第二晶体区域。激光束的波长在370nm至650nm的范围内。通常，第一结晶区域，第二结晶区域和第一结晶区域和第二结晶区域之间的重叠区域的结晶性能相同。

45. 发明申请

US20100035371A1 Method for Fabricating Light Emitting Device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20100035371A1
公开(公告)日：2010-02-11
申请号：US12536069
申请日：2009-08-05
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
IPC分类号： H01L21/26
CPC分类号： H01L51/0009 , C23C14/048 , C23C14/12 , C23C14/28 , H01L51/0013 , H01L51/56
摘要： By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate.
摘要翻译：通过使用具有透光性的第一基板，其第一面设置有光吸收层，将由有机化合物和无机材料构成的混合物照射由无机材料吸收的波长的光加热混合物，由此在第一基板的第一面上形成包含在混合物中的有机化合物的膜。然后，第一基板的第一面和第二基板的沉积表面被布置成彼此相邻或彼此接触，用由光吸收层吸收的具有波长的光的照射从第一基板的第二面侧，以加热有机化合物，由此至少部分有机化合物在第二基板的沉积表面上形成为膜。

46. 发明授权

US07649698B2 Laser light irradiation apparatus and laser light irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US07649698B2
公开(公告)日：2010-01-19
申请号：US12048419
申请日：2008-03-14
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： G02B13/18
CPC分类号： B23K26/0626 , B23K26/0732 , B23K26/0738 , B23K26/0853 , B23K2101/40 , C30B13/24 , C30B29/06 , C30B35/00 , H01L21/02672 , H01L21/02675 , H01L27/1285 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01S3/005 , H01L2924/00
摘要： Laser light is emitted from a laser oscillator, and the laser light is made to enter a beam expander optical system including a concave lens through a correction lens. The laser oscillator, the correction lens and the concave lens are disposed so that, when an emission point of the laser oscillator is a first conjugate point, a point at which an image at the first conjugate point is formed through the correction lens is a second conjugate point, a distance between the correction lens and the second conjugate point is b, a focal length of the concave lens is f, and a distance between the correction lens and the concave lens is X, the X satisfies b−3|f|≦X≦b+|f|.
摘要翻译：从激光振荡器发射激光，使激光进入包括通过校正透镜的凹透镜的光束扩展器光学系统。激光振荡器，校正透镜和凹透镜被设置为使得当激光振荡器的发射点是第一共轭点时，通过校正透镜形成第一共轭点处的图像的点是第二共轭点之间，校正透镜和第二共轭点之间的距离为b，凹透镜的焦距为f，校正透镜与凹透镜之间的距离为X，X满足b-3 | f | <= X <= b + | f |。

47. 发明申请

US20090297694A1 Deposition Method and Method for Manufacturing Light-Emitting Device 有权
标题翻译：制造发光装置的沉积方法和方法
公开(公告)号：US20090297694A1
公开(公告)日：2009-12-03
申请号：US12472562
申请日：2009-05-27
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
IPC分类号： B05D5/12
CPC分类号： H01L51/0005 , H01L27/3211 , H01L51/56
摘要： An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.
摘要翻译：本发明的目的是提供一种用于平滑地获得材料层的期望图案形状的沉积方法，以及当多个不同的材料层堆叠在基底上时，提高生产能力的方法。预先在与第一基板上的光吸收层重叠的位置通过泵送来选择性地形成材料层。在一个沉积衬底上沉积三种发光层。该第一基板和作为沉积靶基板的第二基板被布置为彼此面对，并且通过照射光来加热光吸收层，由此在第二基板上沉积膜。可以通过在光照射之前仅进行一个位置对准来以位置精度沉积三种发光层。

48. 发明申请

US20090291569A1 LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS 有权
标题翻译：激光辐射方法和激光辐射装置
公开(公告)号：US20090291569A1
公开(公告)日：2009-11-26
申请号：US12536053
申请日：2009-08-05
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： H01L21/268 , G02B27/12
CPC分类号： B23K26/0608 , B23K15/0093 , B23K15/10 , B23K26/0648 , B23K26/0732 , B23K26/0738 , B23K2103/56 , G02B3/0062 , G02B27/0927 , G02B27/0961 , G02B27/0966
摘要： The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.
摘要翻译：本发明提供一种激光照射技术，其不受原始光束的强度分布的影响，使用柱面透镜阵列对具有均匀强度分布的激光束照射照射面。从激光振荡器发射的激光束被两种柱面透镜阵列分成多个光束，它们是能量强度分布相反的两种线性激光束，并且两种线性激光束被叠加在短轴方向。这可以形成在照射表面上具有均匀强度分布的线性激光束。

49. 发明授权

US07615424B2 Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus 有权
标题翻译：激光照射装置及使用该激光照射装置的半导体装置的制造方法
公开(公告)号：US07615424B2
公开(公告)日：2009-11-10
申请号：US11087843
申请日：2005-03-24
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
IPC分类号： H01L21/00 , H01L21/84 , H01L31/036
CPC分类号： B23K26/04 , B23K26/0736 , B23K26/0853 , G02B27/0944 , H01L27/3244
摘要： An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam.The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
摘要翻译：本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法，该方法能够用激光束精确地照射大的衬底。激光束的照射位置通过使用发射激光束的激光振荡器，用于将激光束成形为照射对象上的矩形的光学系统来控制，用于使照射对象相对于激光束在长边移动的装置光束点的方向和短边方向，用于使照射物体在长边方向上比在短边方向上更慢地移动的装置，以及激光定位机构。

50. 发明授权

US07585791B2 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07585791B2
公开(公告)日：2009-09-08
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B13/00
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

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