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    • 42. 发明授权
    • Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
    • 照射激光的方法,激光照射系统以及半导体器件的制造方法
    • US07674663B2
    • 2010-03-09
    • US10678083
    • 2003-10-06
    • Shunpei YamazakiKoichiro Tanaka
    • Shunpei YamazakiKoichiro Tanaka
    • H01L21/00
    • B23K26/0608B23K26/0604B23K26/0732B23K26/0736H01L29/42384H01L29/4908H01L29/66757H01L29/66765H01L29/78675H01L29/78678
    • In a manufacturing process of a semiconductor device, when harmonic of CW laser is irradiated to a semiconductor film with relatively scanning the harmonic, several long crystal grains extending in a scanning direction are formed. In the scanning direction, thus formed semiconductor film is substantially close to a single crystal in characteristic. However, the output of the harmonic of the CW laser is small to cause a low annealing efficiency. In the present invention, aid for the output is performed by irradiating second harmonic of CW laser and a fundamental wave of CW laser at the same time to the same portion. In general, the fundamental wave has a wavelength band around 1 μm, and is not well absorbed in a semiconductor film. When the harmonic with a wavelength of visible light or a shorter wavelength than visible light is irradiated at the same time as the fundamental wave to a semiconductor film, the annealing efficiency is remarkably increased since the fundamental wave is well absorbed in the semiconductor film melted by the harmonic.
    • 在半导体器件的制造过程中,当以相对扫描谐波的方式将CW激光的谐波照射到半导体膜时,形成沿扫描方向延伸的若干长晶粒。 在扫描方向上,这样形成的半导体膜基本上接近单晶的特性。 然而,CW激光器的谐波的输出小,导致退火效率低。 在本发明中,通过将CW激光的二次谐波和CW激光的基波同时照射到同一部分来进行输出的辅助。 通常,基波具有大约1μm的波长带,并且在半导体膜中不能良好地被吸收。 当与半导体膜同时照射具有可见光或可见光波长的波长的谐波与基波同时照射时,退火效率显着增加,因为在被半导体膜熔化的半导体膜中良好地吸收了基波 谐波。
    • 45. 发明申请
    • Method for Fabricating Light Emitting Device
    • 制造发光装置的方法
    • US20100035371A1
    • 2010-02-11
    • US12536069
    • 2009-08-05
    • Shunpei YamazakiKoichiro TanakaHisao IkedaSatoshi Seo
    • Shunpei YamazakiKoichiro TanakaHisao IkedaSatoshi Seo
    • H01L21/26
    • H01L51/0009C23C14/048C23C14/12C23C14/28H01L51/0013H01L51/56
    • By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate.
    • 通过使用具有透光性的第一基板,其第一面设置有光吸收层,将由有机化合物和无机材料构成的混合物照射由无机材料吸收的波长的光 加热混合物,由此在第一基板的第一面上形成包含在混合物中的有机化合物的膜。 然后,第一基板的第一面和第二基板的沉积表面被布置成彼此相邻或彼此接触,用由光吸收层吸收的具有波长的光的照射从 第一基板的第二面侧,以加热有机化合物,由此至少部分有机化合物在第二基板的沉积表面上形成为膜。
    • 47. 发明申请
    • Deposition Method and Method for Manufacturing Light-Emitting Device
    • 制造发光装置的沉积方法和方法
    • US20090297694A1
    • 2009-12-03
    • US12472562
    • 2009-05-27
    • Shunpei YamazakiKoichiro TanakaHisao IkedaSatoshi Seo
    • Shunpei YamazakiKoichiro TanakaHisao IkedaSatoshi Seo
    • B05D5/12
    • H01L51/0005H01L27/3211H01L51/56
    • An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.
    • 本发明的目的是提供一种用于平滑地获得材料层的期望图案形状的沉积方法,以及当多个不同的材料层堆叠在基底上时,提高生产能力的方法。 预先在与第一基板上的光吸收层重叠的位置通过泵送来选择性地形成材料层。 在一个沉积衬底上沉积三种发光层。 该第一基板和作为沉积靶基板的第二基板被布置为彼此面对,并且通过照射光来加热光吸收层,由此在第二基板上沉积膜。 可以通过在光照射之前仅进行一个位置对准来以位置精度沉积三种发光层。
    • 49. 发明授权
    • Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
    • 激光照射装置及使用该激光照射装置的半导体装置的制造方法
    • US07615424B2
    • 2009-11-10
    • US11087843
    • 2005-03-24
    • Koichiro TanakaYoshiaki YamamotoNami Kosaka
    • Koichiro TanakaYoshiaki YamamotoNami Kosaka
    • H01L21/00H01L21/84H01L31/036
    • B23K26/04B23K26/0736B23K26/0853G02B27/0944H01L27/3244
    • An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam.The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
    • 本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。 本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法,该方法能够用激光束精确地照射大的衬底。 激光束的照射位置通过使用发射激光束的激光振荡器,用于将激光束成形为照射对象上的矩形的光学系统来控制,用于使照射对象相对于激光束在长边移动的装置 光束点的方向和短边方向,用于使照射物体在长边方向上比在短边方向上更慢地移动的装置,以及激光定位机构。