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1. 发明申请

US20140349466A1 Wafer Supporting Structure and Method for Forming the Same 审中-公开
标题翻译：晶圆支撑结构及其形成方法
公开(公告)号：US20140349466A1
公开(公告)日：2014-11-27
申请号：US13902630
申请日：2013-05-24
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： An-Li Ho , Chi-En Huang , Yi Jia Chen , Pu-Fang Chen , Cary Chia-Chung Lo
IPC分类号： H01L21/02 , C30B13/00
CPC分类号： C30B33/00 , C30B13/00 , C30B29/06 , H01L21/67706 , H01L21/67709 , Y10T117/1076
摘要： A method for forming a wafer supporting structure comprises growing a single crystal using a floating zone crystal growth process, forming a silicon ingot having an oxygen concentration equal to or less than 1 parts-per-million-atomic (ppma), slicing a wafer from the silicon ingot, cutting portions of the wafer to form a supporting structure through a mechanical lathe and applying a high temperature anneal process to the supporting structure.
摘要翻译：用于形成晶片支撑结构的方法包括使用浮动区晶体生长工艺生长单晶，形成氧浓度等于或小于1百万分之一原子（ppma）的硅锭，将晶片从硅锭切割部分，通过机械车床形成支撑结构，并向支撑结构施加高温退火工艺。

2. 发明申请

US20080047485A1 Apparatus for Growing High Quality Silicon Single Crystal Ingot and Growing Method Using the Same 有权
标题翻译：用于生长高品质硅单晶锭和使用其的生长方法的装置
公开(公告)号：US20080047485A1
公开(公告)日：2008-02-28
申请号：US11773727
申请日：2007-07-05
申请人： Hyon-Jong Cho
发明人： Hyon-Jong Cho
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B29/06 , C30B15/14 , C30B35/00 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
摘要翻译：本发明涉及一种用于生长由其制造的高质量Si单晶锭和Si单晶锭及其晶片的装置和方法。生长装置将Si单晶锭的氧浓度控制在各种值，从而以高生产率和极其可控的生长缺陷生产Si单晶锭。

3. 发明授权

US06942730B2 Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals 有权
标题翻译：铅锌铌酸铅钛酸铅（PMN-PT）固溶体和相关压晶体的单晶的定向结晶和生长的混合蓄电池平整熔化方法
公开(公告)号：US06942730B2
公开(公告)日：2005-09-13
申请号：US10288042
申请日：2002-11-04
申请人： Pengdi Han
发明人： Pengdi Han
IPC分类号： C30B11/00 , C30B11/14
CPC分类号： C30B11/00 , C30B29/30 , C30B29/32 , Y10T117/1076 , Y10T117/1084 , Y10T117/1088 , Y10T117/1092
摘要： This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.
摘要翻译：本发明提供了一种用于种子结晶的混合库存扩散器区域平整熔化方法，以及制造基于铌酸铅铌酸铅 - 钛酸铅（PMN-PT）的固溶体和相关压晶体的均匀大尺寸晶体。本发明提供三个温度区域，其在成本有效的多坩埚构造中导致增加的组成均匀性和晶体生长速度。

4. 发明申请

US20020127830A1 Heating treatment device, heating treatment method and fabrication method of semiconductor device 有权
标题翻译：加热处理装置，半导体装置的加热处理方法及制造方法
公开(公告)号：US20020127830A1
公开(公告)日：2002-09-12
申请号：US10141206
申请日：2002-05-07
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Shunpei Yamazaki , Hisashi Ohtani
IPC分类号： C30B001/00 , H01L021/20 , H01L021/36
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L21/2636 , H01L21/324 , H01L21/67115 , H01L21/67167 , H01L21/67213 , H01L21/67236 , H01L27/1214 , H01L27/127 , H01L27/1296 , H01L29/66757 , H01L29/78618 , H01L29/78675 , Y10S438/928 , Y10T117/1076 , Y10T117/1088
摘要： To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film o be treated is formed and infrared light is irradiated from the lower face side by which the lamp annealing process is carried out. According to such a constitution, the efficiency of exciting the film to be treated is significantly promoted since electron excitation effect by the ultraviolet light irradiation is added to vibrational excitation effect by the infrared light irradiation and strain energy caused in the film to be treated by the lamp annealing process is removed or reduced by a furnace annealing process.
摘要翻译：为了提供一种通过灯退火处理有效地对被处理膜进行加热处理的方法和装置，从形成有待处理膜的基板的上表面侧照射紫外光并照射红外光从进行灯退火处理的下表面侧。根据这样的结构，由于通过紫外光照射的电子激发效应被红外光照射引起的振动激发效应和待处理的膜中产生的应变能增加，所以能够显着提高激发被处理膜的效率通过炉退火处理除去或减少灯退火工艺。

5. 发明授权

US06183556B2 Insulating and warming shield for a seed crystal and seed chuck 失效
标题翻译：绝缘和加温屏蔽为晶种和种子卡盘
公开(公告)号：US06183556B2
公开(公告)日：2001-02-06
申请号：US09166957
申请日：1998-10-06
申请人： Richard M. Aydelott , Clifford W. Groat
发明人： Richard M. Aydelott , Clifford W. Groat
IPC分类号： C30B3500
CPC分类号： C30B15/32 , C30B15/36 , Y10S117/911 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A seed chuck for supporting a seed crystal for dipping in a hot melt has a main body including a dipping support formation for connection to a dipping apparatus and a seed support formation for supporting a seed crystal. A shield is coupled to the main body that insulates the seed crystal from cooling and heats the seed crystal with radiant energy emitted from the hot melt. The shield can be in the form of an insulating layer disposed against or inside of a portion of the seed chuck. In this case, the seed crystal is insulated from the cooler seed chuck and allowed to be warmed by the hot melt. The shield can also be a removable flange extending outwardly from the seed chuck and having an inverted cup shape or parabolic umbrella shape. In this case, the shield prevents cooling external gas flow from reaching the seed crystal while capturing and directing heat radiating from the hot melt onto the seed crystal. A method of warming the seed crystal during a growth process in which the a portion of the seed crystal is dipped in a hot melt includes providing a hot melt consisting of a molten mass of material, supporting the seed crystal in a seed chuck for selectively lowering the seed crystal into the hot melt, and warming the seed crystal supported in the seed chuck by using heat radiating from the hot melt and by insulating the seed crystal from external cooling forces.
摘要翻译：用于支撑用于浸入热熔体中的晶种的种子卡盘具有主体，其包括用于连接到浸渍装置的浸渍支撑结构和用于支撑晶种的种子支撑结构。屏蔽耦合到主体，其使晶种不会冷却，并且用从热熔体发射的辐射能加热晶种。屏蔽可以是设置在种子卡盘的一部分的内部或内部的绝缘层的形式。在这种情况下，晶种与较冷的种子卡盘绝缘，并被热熔融物加热。护罩还可以是从种子卡盘向外延伸并具有倒杯形状或抛物线伞形状的可移除凸缘。在这种情况下，防护罩防止冷却外部气体流到达晶种，同时捕获和引导从热熔体辐射到晶种上的热量。在晶种的一部分被浸入热熔体的生长过程中加热晶种的方法包括提供由熔融物质组成的热熔体，将晶种支撑在种子卡盘中以选择性地降低晶种进入热熔体，并通过使用从热熔体辐射的热量并使晶种与外部冷却力绝缘来加热支撑在种子卡盘中的晶种。

6. 发明授权

US4427638A Apparatus for semiconductor ribbon-to-ribbon conversion 失效
标题翻译：用于半导体色带到色带转换的设备
公开(公告)号：US4427638A
公开(公告)日：1984-01-24
申请号：US301627
申请日：1981-09-14
申请人： Ralph J. Ellis , Richard W. Gurtler , Kalluri R. Sarma
发明人： Ralph J. Ellis , Richard W. Gurtler , Kalluri R. Sarma
IPC分类号： C30B13/00 , C30B13/24 , C30B13/06 , C30B13/32
CPC分类号： C30B13/24 , C30B13/00 , C30B29/60 , Y10S117/904 , Y10S117/905 , Y10T117/1076 , Y10T117/1084
摘要： Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.
摘要翻译：提供了用于以刚性边缘模式进行半导体色带到色带转换的装置。提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。在生长过程中，使熔融区沿带的长度移动。掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。

7. 发明授权

US3271115A Apparatus for crucible-free zone melting of semiconductor material 失效
标题翻译：半导体材料无坩埚区熔化的设备
公开(公告)号：US3271115A
公开(公告)日：1966-09-06
申请号：US46904865
申请日：1965-06-21
申请人： SIEMENS AG
发明人： WOLFGANG KELLER
IPC分类号： C30B13/16 , C30B13/20 , C30B13/28 , H05B6/30
CPC分类号： C30B13/16 , C30B13/20 , C30B13/28 , H05B6/30 , Y10S117/911 , Y10T117/1016 , Y10T117/1076 , Y10T117/1088

8. 发明授权

US3245761A Apparatus for making magnesium oxide crystals 失效
标题翻译：用于制造氧化镁晶体的装置
公开(公告)号：US3245761A
公开(公告)日：1966-04-12
申请号：US22985162
申请日：1962-10-11
申请人： NORTON CO
发明人： SCOTT JOHN J , TURNBULL NEIL C
IPC分类号： C30B13/22
CPC分类号： C30B13/22 , C01P2004/03 , Y10T117/1076 , Y10T117/1088

9. 发明授权

US3189415A Device for crucible-free zone melting 失效
公开(公告)号：US3189415A
公开(公告)日：1965-06-15
申请号：US83002659
申请日：1959-07-28
申请人： SIEMENS AG
发明人： REIMER EMEIS
IPC分类号： C30B13/28
CPC分类号： C30B13/28 , Y10T117/1076

10. 发明授权

US3086856A Method and device for the successive zone melting and resolidifying of extremely pure substances 失效
标题翻译：用于连续区域熔化和重新固化极纯物质的方法和装置
公开(公告)号：US3086856A
公开(公告)日：1963-04-23
申请号：US40942054
申请日：1954-02-10
申请人： SIEMENS AG
发明人： KARL SIEBERTZ
IPC分类号： C30B13/16 , C30B13/26 , C30B13/28 , C30B13/32 , C30B15/00 , C30B15/02 , C30B15/30
CPC分类号： C30B13/28 , C30B13/16 , C30B13/26 , C30B13/32 , C30B15/002 , C30B15/02 , C30B15/30 , Y10S117/901 , Y10S117/91 , Y10S117/917 , Y10T117/1036 , Y10T117/1076

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