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41. 发明授权

US07897525B2 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US07897525B2
公开(公告)日：2011-03-01
申请号：US12319231
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

42. 发明申请

US20100162954A1 Integrated facility and process chamber for substrate processing 审中-公开
标题翻译：用于基板加工的集成设备和处理室
公开(公告)号：US20100162954A1
公开(公告)日：2010-07-01
申请号：US12319224
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Ronald L. Rose
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Ronald L. Rose
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , C23C14/568 , H01L21/67161 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67736 , H01L21/67742 , H01L21/67748 , H01L21/67754
摘要： In accordance with some embodiments described herein, a process module facility is provided, comprising: at least one process chamber carried in frame, a subfloor adjacent the process module, a stationary pump and electrical box positioned atop the subfloor; and gas control lines and vacuum exhaust lines housed within the subfloor and coupled the process chamber. The process module facility may be integrated with a larger system for processing substrates which includes two or more process module facilities, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：根据本文所述的一些实施例，提供了一种处理模块设施，包括：至少一个框架承载的处理室，邻近处理模块的底层地板，定位在底层地板顶部的固定泵和电箱; 以及气体控制管线和真空排气管线，其容纳在底层地板内并且连接处理室。过程模块设备可以与更大的系统集成，用于处理基板，其包括两个或更多个处理模块设施，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

43. 发明申请

US20090156004A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20090156004A1
公开(公告)日：2009-06-18
申请号：US12335983
申请日：2008-12-16
申请人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/285 , H01L21/443
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

44. 发明授权

US06430468B1 Method and apparatus for accurate placement of semiconductor wafers onto respective platforms within a single reaction chamber 失效
标题翻译：将半导体晶片精确放置在单个反应室内的相应平台上的方法和装置
公开(公告)号：US06430468B1
公开(公告)日：2002-08-06
申请号：US09716039
申请日：2000-11-17
申请人： Avi Tepman , Lawrence Chung-Lai Lei
发明人： Avi Tepman , Lawrence Chung-Lai Lei
IPC分类号： G06F700
CPC分类号： H01L21/67748 , H01L21/67751 , Y10S414/136
摘要： Method and apparatus are provided for accurately placing first and second semiconductor wafers onto a first and a second platforms, respectively, in a single processing chamber despite changes in the exact positions of the platforms caused by variations in temperature within the chamber. A computer controls a mechanism having a pair of wafer-supporting blades to insert the wafers into the chamber. The computer determines from position sensors when the first wafer is centered over the first platform, then actuates lift pins associated with the first platform to lift the first wafer off of its respective blade. Then the computer in the same way in response to other position sensors moves the second wafer into alignment with the second platform, and raises by lift pins the second wafer off of its respective blade. Thereafter the computer removes the blades from the chamber, and lowers the wafers in precise positions onto their respective platforms.
摘要翻译：提供了方法和装置，用于在第一和第二平台分别在单个处理室中精确地放置第一和第二半导体晶片，尽管由室内的温度变化导致的平台的精确位置的变化。计算机控制具有一对晶片支撑刀片以将晶片插入腔室的机构。当第一晶片在第一平台上居中时，计算机从位置传感器确定，然后致动与第一平台相关联的提升销，以将第一晶片从其相应的叶片提升。然后以相同方式响应于其它位置传感器的计算机将第二晶片移动到与第二平台对准，并且通过提升销使第二晶片从其相应的刀片升高。此后，计算机从腔室中移除刀片，并将晶片在精确位置下降到各自的平台上。

45. 发明授权

US06302965B1 Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces 失效
标题翻译：用于流动的分散板将用于化学气相沉积膜的化合物蒸发到半导体表面上
公开(公告)号：US06302965B1
公开(公告)日：2001-10-16
申请号：US09638506
申请日：2000-08-15
申请人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
发明人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45576 , C23C16/16 , C23C16/455
摘要： A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face. The hole and plurality of passages are designed to have sufficiently large diameters so as to keep pressure drops low with respect to vapor flowing through the plate.
摘要翻译：用于在低压下均匀流动到处理室的分散板，例如用于将金属层沉积到半导体上的钨化合物的气化材料具有中心轴，输入面和输出面的盘状体。分散板在其输入面中具有沿着中心轴线的杯状入口，用于接收气化材料流和多个用于蒸汽流动的通道，每个通道具有长度和直径并且从入口径向延伸，如轮的轮辐相对于从输入面到输出面的中心轴线呈倾斜角。两个环形槽被切割成输出面并与通道的相应端相交。该板具有中心孔，该中心孔具有沿着中心轴线从输入面入口到输出面延伸的扩口直径。孔和多个通道被设计成具有足够大的直径，以便相对于流过板的蒸气保持压力降低。

46. 发明授权

US6063441A Processing chamber and method for confining plasma 失效
标题翻译：处理室和限制等离子体的方法
公开(公告)号：US6063441A
公开(公告)日：2000-05-16
申请号：US982727
申请日：1997-12-02
申请人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
发明人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

47. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

48. 发明授权

US5810936A Plasma-inert cover and plasma cleaning process and apparatus employing same 失效
标题翻译：等离子惰性覆盖物和等离子体清洗工艺及其使用的设备
公开(公告)号：US5810936A
公开(公告)日：1998-09-22
申请号：US662723
申请日：1996-06-10
申请人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
发明人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
IPC分类号： C30B33/12 , C23C16/44 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , H01J2237/022 , Y10S438/905
摘要： A apparatus for removing deposits from within a space at least partially delimited by a surface which is subject to attack from a plasma including a surface cover comprising a material which is inert to the plasma.
摘要翻译：一种用于从至少部分地由受等离子体侵蚀的表面限定的空间内去除沉积物的装置，包括包含对等离子体是惰性的材料的表面覆盖物。

49. 发明授权

US5800686A Chemical vapor deposition chamber with substrate edge protection 失效
标题翻译：化学气相沉积室具有基板边缘保护
公开(公告)号：US5800686A
公开(公告)日：1998-09-01
申请号：US200079
申请日：1994-02-23
申请人： Karl Littau , Lawrence Chung-lai Lei
发明人： Karl Littau , Lawrence Chung-lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate edge protection system includes a ring, which is received over a substrate received on the substrate support member and which is alignable with the substrate to provide a minimum gap between the edge of the substrate and the ring.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。衬底边缘保护系统包括环，该环被接收在容纳在衬底支撑构件上的衬底上并且可与衬底对准，以在衬底的边缘和环之间提供最小间隙。

50. 发明申请

US20180282864A1 APPARATUS AND METHOD OF TURNING OVER A SUBSTRATE IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20180282864A1
公开(公告)日：2018-10-04
申请号：US15905742
申请日：2018-02-26
申请人： Lawrence Chung-Lai Lei
发明人： Lawrence Chung-Lai Lei
IPC分类号： C23C16/458 , H01L31/18 , B65G47/248
摘要： A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

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