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    • 42. 发明授权
    • High brightness LED utilizing a roughened active layer and conformal cladding
    • 高亮度LED利用粗糙的有源层和保形包层
    • US08232568B2
    • 2012-07-31
    • US12545358
    • 2009-08-21
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • H01L33/00
    • H01L33/24H01L33/007
    • A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.
    • 公开了一种发光器件及其制造方法。 该装置包括设置在第一和第二层之间的有源层。 第一层具有顶部和底部表面。 顶表面包括第一导电类型的第一材料,其包括在基本上平坦的表面中的多个凹坑。 有源层覆盖第一层的顶表面并且与顶表面相符,有源层产生以空穴和电子在其中复合的波长为特征的光。 第二层包括第二导电类型的第二材料,第二层覆盖有源层并且符合有源层。 该器件可以构建在具有与第一材料的晶格常数充分不同的晶格常数的衬底上,以产生用于形成凹坑的第一层中的位错。
    • 43. 发明授权
    • LED structure
    • LED结构
    • US08026527B2
    • 2011-09-27
    • US11952048
    • 2007-12-06
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/46H01L33/52H01L33/60
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 一层透明的导电材料与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。
    • 48. 发明授权
    • Light emitting device having a finely-patterned reflective contact
    • 具有精细图案化的反射接触的发光器件
    • US06291839B1
    • 2001-09-18
    • US09151554
    • 1998-09-11
    • Steven D. Lester
    • Steven D. Lester
    • H01L3300
    • H01L33/38H01L33/20H01L33/22H01L33/46H01L2933/0091
    • The invention is an AlInGaN light-emitting device (LED) that includes a p-type contact made of highly-reflective material with closely-spaced openings that increase light extraction efficiency. The minimum dimension of the openings is ¼ of the wavelength of the emitted light and is preferably comparable to the distance current flows laterally in the p-layers of the device. The openings in the metal occupy 20-80% of the top surface of the contact and are finely spaced to achieve transparency and uniform light emission. An optional dielectric encapsulant may be deposited over the p-type contact to improve the contact's adhesion by tacking it down at regular intervals, and to improve light extraction. The surface of the epitaxial layers may be etched in the openings to scatter light in the semiconductor, increasing light extraction. A reflective layer may be applied to the bottom surface of the LED to increase the light extraction efficiency.
    • 本发明是一种AlInGaN发光器件(LED),其包括由具有增加光提取效率的紧密间隔开口的高反射材料制成的p型接触。 开口的最小尺寸是发射光的波长的1/4,并且优选地与装置的p层中横向流动的距离电流相当。 金属中的开口占据接触顶表面的20-80%,并且被精细地隔开以获得透明度和均匀的发光。 可选的电介质密封剂可以沉积在p型接触件上,以通过以规则的间隔将其接合以改善接触的粘附性并改善光提取。 外延层的表面可以在开口中被蚀刻以在半导体中散射光,增加光提取。 可以将反射层施加到LED的底表面以增加光提取效率。
    • 49. 发明授权
    • Electroluminescent display device
    • 电致发光显示装置
    • US5902688A
    • 1999-05-11
    • US687011
    • 1996-07-16
    • Homer AntoniadisSteven D. LesterJeffrey N. Miller
    • Homer AntoniadisSteven D. LesterJeffrey N. Miller
    • H01L51/52H05B33/10H05B33/22H05B33/26H05B33/00
    • H01L27/3239H01L51/5203H05B33/10H05B33/22H05B33/26Y10S428/917
    • This disclosure provides an electroluminescent ("EL") display device having anode, cathode, insulator and organic EL layers. The anode and cathode layers sandwich the other two layers, and the insulator layer is patterned to selectively block flow of current through the EL layers, and thereby locally block generation of light. The patterned insulator layer allows a single panel to display multiple visual attributes, yet does not require electrode patterning. The patterned insulator can be fabricated using photoresist exposure and development procedures. The photoresist is laid on top of a commercially available substrate/electrode layered pair, and is developed to create an assembly that can be completed in a single vacuum deposition process. By etching a small region of the electrode from the commercially available layered pair, and by choosing a deposition frame that blocks deposition on a second, different small region, electrical terminals may be coupled to the panel with a reduced risk of an electrical short.
    • 本公开提供了具有阳极,阴极,绝缘体和有机EL层的电致发光(“EL”)显示装置。 阳极和阴极层将其它两层夹在中间,并且对绝缘体层进行图案化以选择性地阻挡通过EL层的电流,从而局部地阻止光的产生。 图案化绝缘体层允许单个面板显示多个视觉属性,但不需要电极图案化。 可以使用光致抗蚀剂曝光和显影程序来制造图案化的绝缘体。 将光致抗蚀剂铺设在市售的基底/电极分层对的顶部,并且被开发以产生可以在单个真空沉积工艺中完成的组件。 通过从市售的分层对中蚀刻电极的小区域,并且通过选择在第二不同的小区域上阻挡沉积的沉积框架,电端子可以以降低的电气短路的风险耦合到面板。