专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20090230346A1 PIEZOELECTRICS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ACTUATOR 有权
标题翻译：压电元件，压电元件和压电致动器
公开(公告)号：US20090230346A1
公开(公告)日：2009-09-17
申请号：US12402828
申请日：2009-03-12
申请人： Yasuaki HAMADA , Akio KONISHI , Takeshi KIJIMA
发明人： Yasuaki HAMADA , Akio KONISHI , Takeshi KIJIMA
IPC分类号： C04B35/472
CPC分类号： C04B35/493 , C04B35/624 , C04B2235/3251 , C04B2235/3287 , C04B2235/3418 , C04B2235/441 , C04B2235/449 , C04B2235/768 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zrx Ti1-x)1-y My O3, where M is at least one of Ta and Nb, x is in a range of 0.51≦x≦0.57, and y is in a range of 0.05≦y
摘要翻译：压电体包括由组成式表示为Pb（Zr x Ti 1-x）1-y My O 3的钙钛矿型化合物，其中M是Ta和Nb中的至少一种，x在0.51≤x <= 0.57，y在0.05 <= y <0.2的范围内，其中钙钛矿型化合物含有SiO 2和GeO 2中的至少一种作为添加剂，添加剂的添加量为0.5摩尔％以上，但是相对于钙钛矿型化合物的量为5摩尔％以下。

42. 发明申请

US20090225139A1 DROPLET EJECTION DEVICE AND PRINTER 有权
公开(公告)号：US20090225139A1
公开(公告)日：2009-09-10
申请号：US12398351
申请日：2009-03-05
申请人： Takeshi KIJIMA , Shoichi IINO
发明人： Takeshi KIJIMA , Shoichi IINO
IPC分类号： B41J2/045
CPC分类号： B41J2/14274 , B41J2202/11
摘要： A droplet ejection device includes: a substrate having a first pressure chamber, a second pressure chamber, a third pressure chamber and a fourth pressure chamber extending in a first direction; a nozzle plate provided below the substrate, and having a first nozzle aperture continuous with the first pressure chamber, a second nozzle aperture continuous with the second pressure chamber, a third nozzle aperture continuous with the third pressure chamber, and a fourth nozzle aperture continuous with the fourth pressure chamber; a vibration plate provided above the substrate; a first piezoelectric element provided above the vibration plate and above the first pressure chamber; a second piezoelectric element provided above the vibration plate and above the second pressure chamber; a third piezoelectric element provided above the vibration plate and above the third pressure chamber; and a fourth piezoelectric element provided above the vibration plate and above the fourth pressure chamber, wherein, as viewed in a second direction orthogonal to the first direction, the first nozzle aperture is provided at a position that overlaps the third nozzle aperture, and provided at a position that does not overlap the second nozzle aperture and the forth nozzle aperture; the second nozzle aperture is provided at a position that overlaps the fourth nozzle aperture, and provided at a position that does not overlap the first nozzle aperture and the third nozzle aperture, as viewed in the second direction; the first piezoelectric element is provided at a position that overlaps the third piezoelectric element, and provided at a position that does not overlap the second piezoelectric element and the fourth piezoelectric element, as viewed in the second direction; and the second piezoelectric element is provided at a position that overlaps the fourth piezoelectric element, and provided at a position that does not overlap the first piezoelectric element and the third piezoelectric element.

43. 发明申请

US20080299313A1 Film forming apparatus and film forming method 审中-公开
标题翻译：成膜装置及成膜方法
公开(公告)号：US20080299313A1
公开(公告)日：2008-12-04
申请号：US12151111
申请日：2008-05-02
申请人： Takeshi Kijima
发明人： Takeshi Kijima
IPC分类号： C23C16/06 , C23C16/54 , C23C16/38
CPC分类号： C23C16/045 , C03C17/004 , C03C17/225 , C03C17/245 , C03C2217/216 , C03C2217/228 , C03C2217/281 , C03C2218/152 , C23C16/455 , C23C16/46
摘要： A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body.
摘要翻译：提供一种通过化学气相沉积法在管状体的内壁上形成膜的成膜装置。成膜装置包括：源材料收纳部; 处理气体生成部，其形成从所述源材料收纳部供给的含有源材料的处理气体; 成膜部，其在所述管状体的内壁上形成膜; 工艺气体供给管，其连接到所述管状体并将所述处理气体从所述处理气体产生部供给到所述管状体; 以及连接到管状体并排出已经通过管状体的处理气体的处理气体放电管，其中成膜部分包括保持管状体的保持部分。

44. 发明申请

US20080159939A1 Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element 审中-公开
公开(公告)号：US20080159939A1
公开(公告)日：2008-07-03
申请号：US11987971
申请日：2007-12-06
申请人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
发明人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
IPC分类号： B32B18/00
CPC分类号： C04B35/457 , C04B35/01 , C04B35/16 , C04B35/42 , C04B35/4521 , C04B35/465 , C04B35/472 , C04B35/475 , C04B35/491 , C04B35/493 , C04B35/495 , C04B35/497 , C04B35/624 , C04B35/6264 , C04B35/62645 , C04B35/64 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3287 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/3427 , C04B2235/3436 , C04B2235/3445 , C04B2235/3454 , C04B2235/3463 , C04B2235/664 , C04B2235/76 , C04B2235/80 , C23C14/08 , C23C16/40 , C23C16/409 , C23C18/1208 , C23C18/1225 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1878 , H01L41/318
摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

45. 发明申请

US20080081154A1 Element substrate and method of manufacturing the same 有权
标题翻译：元件基板及其制造方法
公开(公告)号：US20080081154A1
公开(公告)日：2008-04-03
申请号：US11906549
申请日：2007-10-02
申请人： Toshihiko Kaneda , Satoshi Kimura , Hidemichi Furihata , Takeshi Kijima
发明人： Toshihiko Kaneda , Satoshi Kimura , Hidemichi Furihata , Takeshi Kijima
IPC分类号： B32B3/00 , B05D1/36 , B05D3/00
CPC分类号： H05K3/20 , C23C18/1608 , C23C18/1657 , C23C18/1689 , C23C18/2086 , C23C18/36 , H05K3/107 , H05K2201/09036 , H05K2201/09981 , H05K2203/0108 , H05K2203/0113 , H05K2203/072 , Y10S977/887 , Y10T428/24479 , Y10T428/26
摘要： A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; disposing a second support substrate on the first support substrate so that the metal layer is interposed between the first and second support substrates; pouring a resin material in a fluid state between the first and second support substrates; curing the resin material to form a resin substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the resin substrate.
摘要翻译：一种元件基板的制造方法，包括：在第一支撑基板上形成剥离层; 在剥离层上形成具有预定图案的金属层; 在所述第一支撑基板上设置第二支撑基板，使得所述金属层介于所述第一和第二支撑基板之间; 在第一和第二支撑基板之间浇注处于流体状态的树脂材料; 固化树脂材料以形成树脂基材; 以及通过分解所述剥离层以将所述金属层转移到所述树脂基板，从所述第一支撑基板移除所述金属层。

46. 发明授权

US07303828B2 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device 有权
标题翻译：铁电体膜，其制造方法，铁电存储器和压电装置
公开(公告)号：US07303828B2
公开(公告)日：2007-12-04
申请号：US10807427
申请日：2004-03-24
申请人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
发明人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
IPC分类号： B32B9/00
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1254 , C23C30/00 , C30B5/00 , C30B29/30 , C30B29/32 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L41/0805 , H01L41/1876 , H01L41/1878 , H01L41/318
摘要： A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要翻译：在Pb（Zr，Ti）O 3 Fe铁电体的B位置中包含至少包含至少一种Nb，V和W中的至少一种的5〜40mol％的铁电体膜，其至少包括浓度为1％以上的铁电体钙钛矿材料的A位离子中的4重配位Si 4+或4+ 4+。这使得能够显着提高铁电体膜的可靠性。

47. 发明授权

US07291960B2 Piezoelectric device, piezoelectric actuator, piezoelectric pump, inkjet recording head, inkjet printer, surface acoustic wave device, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic instrument 有权
标题翻译：压电元件，压电致动器，压电泵，喷墨记录头，喷墨打印机，声表面波器件，薄膜压电谐振器，频率滤波器，振荡器，电子电路和电子仪器
公开(公告)号：US07291960B2
公开(公告)日：2007-11-06
申请号：US11304938
申请日：2005-12-15
申请人： Setsuya Iwashita , Takeshi Kijima , Koji Ohashi
发明人： Setsuya Iwashita , Takeshi Kijima , Koji Ohashi
IPC分类号： H01L41/047
CPC分类号： B41J2/14233 , F04B43/046 , H01L41/0478 , H01L41/0973
摘要： A piezoelectric device including: a substrate; a first conductive layer formed over the substrate, the first conductive layer including a conductive oxide layer formed of a (001) preferentially oriented lanthanum nickelate, and the lanthanum nickelate having oxygen deficiency; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.
摘要翻译：一种压电装置，包括：基板; 形成在所述基板上的第一导电层，所述第一导电层包括由（001）优先取向的镍酸镧形成的导电氧化物层和具有氧缺陷的所述镍酸镧; 形成在所述第一导电层上并包括具有钙钛矿结构的压电体的压电层; 以及与压电层电连接的第二导电层。

48. 发明申请

US20070126042A1 Transistor type ferroelectric memory and method of manufacturing the same 失效
标题翻译：晶体管型铁电存储器及其制造方法
公开(公告)号：US20070126042A1
公开(公告)日：2007-06-07
申请号：US11633682
申请日：2006-12-04
申请人： Takeshi Kijima , Akio Konishi
发明人： Takeshi Kijima , Akio Konishi
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L29/78391
摘要： A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source electrode formed above the ferroelectric layer; a drain electrode formed above the ferroelectric layer and apart from the source electrode; and a channel layer formed above the ferroelectric layer and between the source electrode and the drain electrode.
摘要翻译：一种晶体管型铁电存储器，包括：基板; 形成在所述衬底上的栅电极; 形成在所述基板上方以覆盖所述栅电极的铁电层; 形成在铁电层上方的源电极; 漏电极，形成在铁电层之上并与源极隔离; 以及形成在铁电层上方以及源电极和漏电极之间的沟道层。

49. 发明申请

US20070119343A1 Complex metal oxide raw material composition 审中-公开
标题翻译：复合金属氧化物原料组成
公开(公告)号：US20070119343A1
公开(公告)日：2007-05-31
申请号：US11605561
申请日：2006-11-28
申请人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
发明人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
IPC分类号： C23C16/40
CPC分类号： H01L21/02194 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/82 , C01P2006/40 , C01P2006/42 , C04B35/493 , C04B35/6264 , C04B35/6325 , C04B35/634 , C04B2235/3251 , C04B2235/3287 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C04B2235/768 , C23C18/1216 , C23C18/1225 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02205 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L41/1876
摘要： A complex metal oxide raw material composition used for forming a complex metal oxide, the complex metal oxide being shown by a general formula AB1-xCxO3, wherein an element A includes at least Pb, an element B includes at least one of Zr, Ti, V, W, and Hf, and an element C includes at least one of Nb and Ta, and the raw material composition including: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.
摘要翻译：用于形成复合金属氧化物的复合金属氧化物原料组合物，所述复合金属氧化物由通式AB 1-x C x O 3 3 其中元素A至少包括Pb，元素B包括Zr，Ti，V，W和Hf中的至少一种，元素C包括Nb和Ta中的至少一种，原料组合物，其包括：包含元素A，元素B或元素C的可热分解的有机金属化合物中的至少一种，包含元素A，元素B或元素C的可水解的有机金属化合物，以及部分水解产物和 /或可水解有机金属化合物的缩聚物; 多元羧酸和多元羧酸酯中的至少一种; 和有机溶剂。

50. 发明申请

US20070075355A1 CAPACITOR AND ITS MANUFACTURING METHOD, FERROELECTRIC MEMORY DEVICE, ACTUATOR, AND LIQUID JETTING HEAD 有权
标题翻译：电容器及其制造方法，电磁记忆装置，致动器和液体喷射头
公开(公告)号：US20070075355A1
公开(公告)日：2007-04-05
申请号：US11531424
申请日：2006-09-13
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01L29/788
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/56 , H01L28/65 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.
摘要翻译：电容器包括下电极，由下电极形成的锆钛酸铅铌酸铅构成的第一电介质膜，由锆钛酸铅或锆钛酸铅钛酸铌构成的第二电介质膜，Nb组成小于锆酸铅构成第一电介质膜的钛酸铌酸酯和形成在第二电介质膜上方的上电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式