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41. 发明授权

US08994024B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08994024B2
公开(公告)日：2015-03-31
申请号：US12835905
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L27/12 , H01L29/45
CPC分类号： H01L27/124 , H01L27/1225 , H01L29/45
摘要： A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
摘要翻译：制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。显示装置包括在同一基板上的驱动电路部分和显示部分。驱动器电路部分包括驱动电路晶体管和驱动电路布线。使用金属形成驱动电路晶体管的源电极和漏电极。使用氧化物半导体形成驱动电路晶体管的沟道层。驱动电路布线使用金属形成。显示部分包括像素晶体管和显示部分布线。使用透明氧化物导体形成像素晶体管的源电极和漏电极。使用氧化物半导体形成像素晶体管的半导体层。显示部分布线使用透明氧化物导体形成。

42. 发明授权

US08986870B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US08986870B2
公开(公告)日：2015-03-24
申请号：US12719629
申请日：2010-03-08
申请人： Shunpei Yamazaki , Konami Izumi
发明人： Shunpei Yamazaki , Konami Izumi
IPC分类号： H01M2/18 , H01M4/02 , H01G9/04 , H01G9/008 , H01G9/02 , H01G9/022 , H01G9/00 , H01G11/26 , H01G11/28 , H01G11/52 , H01G11/68 , H01M4/13 , H01M4/36 , H01M10/052 , H01G11/24 , H01G11/60 , H01M2/16 , H01M4/66 , H01M10/0525 , H01M10/0566 , H01M10/0569
CPC分类号： H01M10/058 , C23F4/00 , H01G9/016 , H01G9/02 , H01G9/038 , H01G9/058 , H01G9/155 , H01G11/24 , H01G11/26 , H01G11/28 , H01G11/52 , H01G11/60 , H01G11/68 , H01M2/16 , H01M4/0404 , H01M4/13 , H01M4/139 , H01M4/366 , H01M4/661 , H01M10/052 , H01M10/0525 , H01M10/0566 , H01M10/0569 , H01M2004/021 , H01M2300/0025 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y10T29/49115
摘要： The present invention relates to a power storage device including: a positive electrode having a positive-electrode current collector, a positive-electrode active material with a plurality of first projections on the positive-electrode current collector, and a first insulator on an end of each of the plurality of first projections; a negative electrode having a negative-electrode current collector, a negative-electrode active material with a plurality of second projections on a surface of the negative-electrode current collector, and a second insulator on an end of each of the plurality of second projections; a separator between the positive electrode and the negative electrode; and an electrolyte provided in a space between the positive electrode and the negative electrode and containing carrier ions. In each of the first projections and the second projections, a ratio of the height to the width is 3 or more and 1000 or less to 1, i.e. (3 to 1000):1.
摘要翻译：蓄电装置技术领域本发明涉及一种蓄电装置，其特征在于，具备：具有正极集电体的正极，在所述正极集电体上具有多个第一突起的正极活性物质，所述多个第一突起中的每一个; 具有负极集电体的负极，在负极集电体的表面上具有多个第二突起的负极活性物质，以及在所述多个第二突起中的每一个的端部上的第二绝缘体; 正极和负极之间的隔膜; 以及设置在正极和负极之间的空间中并含有载流子离子的电解质。在每个第一突起和第二突起中，高度与宽度之比为3以上且1000以下至1，即（3〜1000）：1。

43. 发明授权

US08980684B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08980684B2
公开(公告)日：2015-03-17
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L27/12 , H01L29/786
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

44. 发明授权

US08945981B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08945981B2
公开(公告)日：2015-02-03
申请号：US12511273
申请日：2009-07-29
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78606
摘要： To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.
摘要翻译：提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件和具有高质量生产率的半导体器件的制造方法。总而言之，包括使用含有In，Ga和Zn的氧化物半导体膜作为半导体层的反交错（底栅极）薄膜晶体管，沟道保护层设置在与沟道形成区域，并且在半导体层和源极和漏极之间设置有缓冲层。通过有意地提供具有比半导体层和源极和漏极之间的半导体层更高的载流子浓度的缓冲层来形成欧姆接触。

45. 发明授权

US08941617B2 Image input-output device with color layer between photodetector and display elements to improve the accuracy of reading images in color 有权
标题翻译：图像输入输出设备，在光电检测器和显示元件之间具有彩色层，以提高彩色图像的读取精度
公开(公告)号：US08941617B2
公开(公告)日：2015-01-27
申请号：US12604906
申请日：2009-10-23
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G06F3/042 , H01L31/0232 , H01L27/144 , H01L31/101 , G02F1/1335 , G02F1/1333 , G06F3/041 , H01L27/32 , H01L31/0216 , G02F1/133 , G02F1/1362 , H01L27/146
CPC分类号： G06F3/042 , G02F1/13338 , G02F1/133514 , G02F2001/13312 , G02F2001/136222 , G06F3/0412 , H01L27/14678 , H01L27/3213 , H01L27/322 , H01L27/3234 , H01L27/326 , H01L31/02162 , H01L2227/323
摘要： An image input-output device includes a pixel which displays an image and reads an image. The pixel includes a photodetector element, a color layer, and a display element. The color layer is provided over the photodetector element and the display element is provided over the color layer, so that the distance between the photodetector element and the color layer is reduced. Accordingly, light is likely to enter the predetermined photodetector element through the predetermined color layer, and thus, even a color object can be read correctly.
摘要翻译：图像输入输出装置包括显示图像并读取图像的像素。像素包括光电检测器元件，彩色层和显示元件。彩色层设置在光电探测器元件上，并且显示元件设置在彩色层上，使得光电检测器元件和彩色层之间的距离减小。因此，光可能通过预定的颜色层进入预定的光电检测器元件，从而可以正确地读取彩色对象。

46. 发明授权

US08941112B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08941112B2
公开(公告)日：2015-01-27
申请号：US13330749
申请日：2011-12-20
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L21/331 , H01L21/00 , H01L27/108 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L21/02565 , H01L21/477 , H01L27/1225 , H01L29/045 , H01L29/0847 , H01L29/24 , H01L29/4908 , H01L29/517 , H01L29/66742 , H01L29/66969 , H01L29/78621 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.
摘要翻译：提供了不太可能引起由于小型化导致的电特性波动的半导体器件。半导体器件包括氧化物半导体膜，其包括第一区域，与第一区域的侧表面接触的一对第二区域和与该对第二区域的侧表面接触的一对第三区域; 设置在所述氧化物半导体膜上的栅极绝缘膜; 以及在所述栅极绝缘膜上方并与所述第一区域重叠的第一电极。第一区域是CAAC氧化物半导体区域。一对第二区域和一对第三区域分别是含有掺杂剂的非晶氧化物半导体区域。一对第三区域的掺杂剂浓度高于该对第二区域的掺杂剂浓度。

47. 发明授权

US08940610B2 Electrode for energy storage device and method for manufacturing the same 有权
标题翻译：储能装置用电极及其制造方法
公开(公告)号：US08940610B2
公开(公告)日：2015-01-27
申请号：US13085234
申请日：2011-04-12
申请人： Kazutaka Kuriki , Tamae Moriwaka , Satoshi Murakami , Shunpei Yamazaki
发明人： Kazutaka Kuriki , Tamae Moriwaka , Satoshi Murakami , Shunpei Yamazaki
IPC分类号： H01L21/331 , H01L21/02 , H01L29/04
CPC分类号： H01L29/045 , H01L21/02532 , H01L21/0262 , H01L21/02672 , Y02E60/122 , Y02P70/54
摘要： An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a {110} crystal plane. The crystalline semiconductor film having a {110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a {110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and also containing germanium and a metal element which reacts with silicon to form a silicide.
摘要翻译：提供了一种用于由于充放电而劣化较少的储能装置的电极及其制造方法。此外，可以提供具有大容量和高耐久性的能量存储装置。在其中在集电体上形成活性物质的能量存储装置的电极中，活性物质的表面由具有{110}晶面的结晶半导体膜形成。具有{110}晶面的结晶半导体膜可以是含有与硅反应形成硅化物的金属元素的结晶硅膜。或者，具有{110}晶面的结晶半导体膜可以是含有硅作为其主要成分并且还含有锗和与硅反应形成硅化物的金属元素的结晶半导体膜。

48. 发明授权

US08928018B2 Light-emitting device and manufacturing method thereof, lighting device, and display device 有权
标题翻译：发光装置及其制造方法，照明装置和显示装置
公开(公告)号：US08928018B2
公开(公告)日：2015-01-06
申请号：US13369892
申请日：2012-02-09
申请人： Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
发明人： Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L33/00 , H01L21/00 , H01L27/32 , H01L51/52
CPC分类号： H01L27/3276 , H01L27/3246 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L2251/5361
摘要： In a light-emitting device, an insulating separation layer whose upper portion protrudes more than a bottom portion in a direction parallel to a substrate is provided on and in contact with a common wiring provided over the substrate. An EL layer provided over the separation layer on the common wiring is physically divided by the separation layer. An upper electrode layer formed in the same position is also physically divided by the separation layer and is in contact with the common wiring in a region overlapped with the most protruding portion of the separation layer. Such a common wiring may be used as an auxiliary wiring. Further, such a light-emitting device may be applied to a lighting device and a display device.
摘要翻译：在发光器件中，在平行于衬底的方向上上部比底部突出的绝缘分离层设置在设置在衬底上的公共布线并与其接触。设置在公共布线上的分离层上的EL层由分离层物理地分开。形成在同一位置的上电极层也被分离层物理地分开，并且在与分离层的最突出部分重叠的区域中与公共布线接触。这种公共布线可以用作辅助布线。此外，这种发光装置可以应用于照明装置和显示装置。

49. 发明授权

US08921948B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08921948B2
公开(公告)日：2014-12-30
申请号：US13345795
申请日：2012-01-09
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L27/088 , H01L21/02 , H01L29/786
CPC分类号： H01L27/1288 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/469 , H01L21/477 , H01L27/1214 , H01L27/1259 , H01L27/127 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.
摘要翻译：该半导体器件包括：衬底上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。从源电极的外边缘到漏电极的外边缘的氧化物半导体层的外边缘的一部分的长度是半导体器件的沟道长度的三倍以上，优选大于五倍。此外，通过热处理从栅极绝缘层向氧化物半导体层提供氧。此外，在氧化物半导体层被选择性蚀刻之后形成绝缘层。

50. 发明授权

US08917016B2 Display device and electronic apparatus 有权
标题翻译：显示设备和电子设备
公开(公告)号：US08917016B2
公开(公告)日：2014-12-23
申请号：US13010060
申请日：2011-01-20
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01J1/62 , G09G3/32 , H01L27/32 , G09G3/20 , H01L51/52
CPC分类号： H01L27/283 , G09G3/2022 , G09G3/3233 , G09G2300/0417 , G09G2300/0426 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0251 , G09G2310/0256 , G09G2310/0286 , G09G2320/0223 , G09G2320/043 , H01L27/156 , H01L27/3276 , H01L29/78669 , H01L29/78696 , H01L51/0545 , H01L51/0562 , H01L51/5203
摘要： A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, alight emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer.
摘要翻译：一种显示装置，其中由于晶体管的特性变化导致的亮度变化减小，并且防止了由于电阻值的变化引起的图像质量劣化。本发明包括晶体管，其沟道部分由非晶半导体或有机半导体形成，连接线连接到晶体管的源电极或漏极，具有层叠结构的发光元件包括像素电极，电致发光层和对电极，围绕像素电极的端部的绝缘层和形成在与晶体管，连接布线或像素电极的栅电极相同的层中的辅助布线。此外，连接布线连接到像素电极，并且辅助布线经由设置在绝缘层中的开口部分连接到对电极。

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