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41. 发明申请

US20050052890A1 Display driver, display device, and driver method 有权
标题翻译：显示驱动程序，显示设备和驱动方式
公开(公告)号：US20050052890A1
公开(公告)日：2005-03-10
申请号：US10891146
申请日：2004-07-15
申请人： Akira Morita
发明人： Akira Morita
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C8/00 , G11C19/08
CPC分类号： G09G3/3688 , G09G3/3607 , G09G2300/0876 , G09G2310/0248 , G09G2310/027 , G09G2310/0297
摘要： A display driver including: a data line driver circuit which drives an output line based on a drive voltage corresponding to display data; a first switching element connected between a first power supply line and the output line; a second switching element connected between a second power supply line and the output line; and a switch control circuit which controls the first and second switching elements. The lengths of first and second periods are determined based on at least part of the display data in a horizontal scanning period which is immediately before a current horizontal scanning period. The first and second switching elements are respectively turned ON and OFF in the first period, and are respectively turned OFF and ON in the second period. After the second period, the first and second switching elements are turned OFF, and the output line is driven by the data line driver circuit.
摘要翻译：一种显示驱动器，包括：数据线驱动器电路，其基于与显示数据相对应的驱动电压来驱动输出线; 连接在第一电源线和输出线之间的第一开关元件; 连接在第二电源线和输出线之间的第二开关元件; 以及控制第一和第二开关元件的开关控制电路。第一和第二周期的长度基于在当前水平扫描周期之前的水平扫描周期中的显示数据的至少一部分来确定。第一和第二开关元件在第一周期中分别导通和截止，并且在第二周期中分别断开和接通。在第二时段之后，第一和第二开关元件断开，输出线由数据线驱动电路驱动。

42. 发明申请

US20050018462A1 Pattern layout of transfer transistors employed in row decoder 失效
标题翻译：在行解码器中使用的转移晶体管的图案布局
公开(公告)号：US20050018462A1
公开(公告)日：2005-01-27
申请号：US10922950
申请日：2004-08-23
申请人： Koji Hosono , Hiroshi Nakamura , Kenichi Imamiya , Tomoharu Tanaka
发明人： Koji Hosono , Hiroshi Nakamura , Kenichi Imamiya , Tomoharu Tanaka
IPC分类号： H01L21/8247 , G11C8/08 , G11C8/10 , G11C16/04 , G11C16/08 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , G11C19/08
CPC分类号： G11C8/10 , G11C8/08 , G11C16/0483 , G11C16/08
摘要： A semiconductor device comprises a memory cell array and a word-line select circuit. The memory cell array includes a plurality of memory cells arranged in rows and columns. The memory cell array includes a plurality of blocks in each one of which the memory cells are arranged. The word-line select circuit includes transfer transistors arranged in row and column directions, and is configured to transfer a plurality of different voltages to word lines through current paths of the transfer transistors and select memory cells of at least one row of said plurality of blocks. The transfer transistors include a first group, which transfers the lowest voltage of voltages applied to the word lines in a writing operation and a second group, which is arranged not to be adjacent to the first group and transfers the highest voltage of voltages applied to the word lines in a writing operation.
摘要翻译：半导体器件包括存储单元阵列和字线选择电路。存储单元阵列包括以行和列排列的多个存储单元。存储单元阵列包括其中每个存储单元被布置的多个块。字线选择电路包括以列和列方向布置的传输晶体管，并且被配置为通过传输晶体管的电流路径将多个不同的电压传送到字线，并且选择所述多个块的至少一行的存储单元。转移晶体管包括第一组，其在写入操作中传送施加到字线的最低电压电压，第二组被布置为不与第一组相邻，并且传送施加到第一组的最高电压电压写字操作中的字线。

43. 发明授权

US6122190A Semiconductor memory device capable of high speed plural parallel test 失效
标题翻译：具有高速多并联测试的半导体存储器件
公开(公告)号：US6122190A
公开(公告)日：2000-09-19
申请号：US942691
申请日：1997-09-29
申请人： Tsukasa Ooishi
发明人： Tsukasa Ooishi
IPC分类号： G01R31/28 , G11C7/00 , G11C11/21 , G11C11/401 , G11C11/404 , G11C11/406 , G11C11/407 , G11C11/408 , G11C19/08 , G11C29/00 , G11C29/06 , G11C29/30 , G11C29/34 , G11C29/46 , G11C29/56 , H01L21/8242 , H01L27/108
CPC分类号： G11C29/56 , G11C29/30 , G11C29/34 , G11C29/46
摘要： A semiconductor memory device having a memory cell array, in which each of memory cell N-channel transistors formed in a P-type well has a source connected to a storage node of cell capacitor and a drain connected to a bit line. The potential levels of the well and a cell plate of the cell capacitor are controlled independently. The potential control circuit is capable of changing the potential level of the well from a predetermined negative level to a predetermined positive level so that charges can be transmitted to each of the storage node through the well. Write data for testing are collectively written to a plurality of memory cells.
摘要翻译：一种具有存储单元阵列的半导体存储器件，其中形成在P型阱中的每个存储单元N沟道晶体管具有连接到单元电容器的存储节点的源极和连接到位线的漏极。单元电容器的阱和电池板的电位水平独立地被控制。电位控制电路能够将阱的电位从预定的负电平改变到预定的正电平，使得可以通过阱将电荷传输到每个存储节点。用于测试的写入数据被共同写入多个存储器单元。

44. 发明授权

US5869963A Magnetoresistive sensor and head 失效
公开(公告)号：US5869963A
公开(公告)日：1999-02-09
申请号：US922937
申请日：1997-09-03
申请人： Masamichi Saito , Toshinori Watanabe
发明人： Masamichi Saito , Toshinori Watanabe
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11C11/16 , H01F10/32 , H01L43/08 , H01L43/12 , G01R33/02 , G11B5/127 , G11C19/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11C11/16 , H01F10/3263 , H01F10/3268 , H01L43/08 , H01L43/12 , G11B2005/3996 , G11B5/3163
摘要： PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.

45. 发明授权

US5327371A Information recording and reproducing apparatus 失效
标题翻译：信息记录和再现装置
公开(公告)号：US5327371A
公开(公告)日：1994-07-05
申请号：US837634
申请日：1992-02-14
申请人： Yooji Maruyama , Yoshito Tsunoda , Ryo Imura , Kazuhisa Fujimoto
发明人： Yooji Maruyama , Yoshito Tsunoda , Ryo Imura , Kazuhisa Fujimoto
IPC分类号： G11C11/14 , G11C5/00 , G11C19/08
CPC分类号： G11C19/0841 , G11C5/00
摘要： An information recording and reproducing apparatus which has a memory portion which uses the Bloch lines occurring at the magnetic domain walls at the periphery of magnetic domains present in magnetic garnet films as the information carrier, a drive portion to write information into or read information from the said memory portion, and in which the memory portion is constructed to be connectable to and disconnectable from the drive means, wherein the signal transfer is carried out via a connection means when the said memory portion is set in the drive portion. In this information recording and reproducing apparatus, since the recording portion can be freely connected to or disconnected from the drive portion, it is possible to selectively insert portable substrates storing different information in the same apparatus body portion.
摘要翻译：一种信息记录和再现装置，其具有使用在磁性石榴石膜中存在的磁畴周围的磁畴壁处出现的Bloch线作为信息载体的存储部分，将信息写入或从其中读取信息的驱动部分所述存储部分，其中所述存储器部分被构造成可连接到所述驱动装置并且可与所述驱动装置断开，其中当所述存储器部分被设置在所述驱动部分中时，经由连接装置执行所述信号传送。在该信息记录和再现装置中，由于记录部分可以自由地连接到驱动部分或从驱动部分断开，因此可以将存储不同信息的便携式基板选择性地插入到相同的装置主体部分中。

46. 发明授权

US5276640A Superconductor-semiconductor hybrid memory circuits with superconducting three-terminal switching devices 失效
标题翻译：具超导三端开关器件的超导半导体混合存储电路
公开(公告)号：US5276640A
公开(公告)日：1994-01-04
申请号：US71730591
申请日：1991-06-17
申请人： MICROELECTRONICS COMPUTER TECHNOLOGY CORP
发明人： GHOSHAL UTTAM S , KROGER HARRY
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/78 , H01L39/22 , H03K17/92 , H03K19/195 , G11C11/44 , G11B11/00 , G11C11/34 , G11C19/08
CPC分类号： H01L27/092 , Y10S505/701 , Y10S505/834 , Y10S505/837 , Y10S505/841

47. 发明授权

US5185716A Three dimensional combined magneto-optical memory and logic processor 失效
标题翻译：三维组合磁光存储器和逻辑处理器
公开(公告)号：US5185716A
公开(公告)日：1993-02-09
申请号：US733693
申请日：1991-07-22
申请人： Frank F. Mehdipour
发明人： Frank F. Mehdipour
IPC分类号： G11C11/14 , G11C19/08 , H03K19/14
CPC分类号： H03K19/14 , G11C11/14 , G11C13/06 , G11C19/0875
摘要： A three-dimensional combined magneto-optic memory and logic processor consisting of layers of magnetic bubble material spaced from and parallel to one another. Each layer has a pattern of magnetic bubbles formed under the control of an external data processing system. A laser beam is directed through the layers, and binary signals corresponding to the overall patterns of the magnetic bubbles on all the layers which intersect the beam are detected by a first detector array. Data and logic functions are programmed on to each layer by appropriate control of the magnetic bubbles by the external processing system. Wave guides are provided to reflect light from the magnetic bubbles to a second detector array. In this manner, the two detector arrays may be caused to generate electric signals representing data and logic functions, thereby eliminating the bottle-neck between processor and memory which is prevalent in prior art data processing systems.
摘要翻译：三维组合磁光存储器和逻辑处理器，由彼此间隔开并平行的磁性气泡材料层组成。每层具有在外部数据处理系统的控制下形成的磁气泡图案。激光束被引导通过层，并且与通过光束相交的所有层上的磁性气泡的整体图案对应的二进制信号由第一检测器阵列检测。数据和逻辑功能通过外部处理系统适当地控制磁性气泡而被编程到每个层上。提供波导以将来自磁性气泡的光反射到第二检测器阵列。以这种方式，可以使两个检测器阵列产生表示数据和逻辑功能的电信号，从而消除现有技术数据处理系统中普遍存在的处理器和存储器之间的瓶颈。

48. 发明授权

US5172336A Method of transferring Bloch lines 失效
标题翻译：转移布洛赫线的方法
公开(公告)号：US5172336A
公开(公告)日：1992-12-15
申请号：US734098
申请日：1991-07-23
申请人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Akira Shinmi
发明人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Akira Shinmi
IPC分类号： G11C19/08
CPC分类号： G11C19/0816 , G11C19/0858
摘要： A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.
摘要翻译：在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤：在磁性薄膜上分配预定的软磁性材料层图案，向磁性薄膜施加磁场软磁材料层图案平行于磁性薄膜的薄膜表面，以在磁性薄膜中形成势阱，将布洛赫线定位在势阱中，并改变软磁材料层图案的磁化方向平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。

49. 发明授权

US5142491A Magnetic bubble recording device 失效
标题翻译：磁鼓记录装置
公开(公告)号：US5142491A
公开(公告)日：1992-08-25
申请号：US798053
申请日：1991-11-27
申请人： Yoichi Osato
发明人： Yoichi Osato
IPC分类号： G11C19/08
CPC分类号： G11C19/0875 , G11C19/0816 , G11C19/0883
摘要： Disclosed is an improved magnetic bubble recording device for optically effecting writing, reading and erasure of information with respect to magnetic bubbles. The magnetic bubble recording device has a basic structure in which a first magnetic film for forming a magnetic bubble therein and a second magnetic film for imparting a bias magnetic field to the first magnetic film to stably hold the maganetic bubble in the first magnetic film are provided on a substrate on which is formed a transfer pattern for transferring a magnetic bubble along the transfer pattern, thereby providing a portable magnetic bubble recording device at low cost and with a simple structure. In addition, an alignment pattern for aligning the device with a light beam applied to the device is formed on the device, thereby permitting accurate writing and reading. The peripheral edge portion of the pattern of a transfer channel has a surface inclined with respect to the substrate surface so as to transfer the magnetic bubble favorably. Further, a device is provided in which a first transfer channel includes a plurality of transfer channels that do not intersect each other and a second transfer channel that intersects the transfer channels constituting the first transfer channel, formed so as to effect optical reading and writing smoothly and at high speed.
摘要翻译：公开了一种用于光学地实现关于磁性气泡的信息的写入，读取和擦除的改进的气泡记录装置。磁气泡记录装置具有其中用于形成磁性气泡的第一磁性膜和用于向第一磁性膜施加偏置磁场以稳定地保持第一磁性膜中的杂散气泡的第二磁性膜的基本结构在其上形成有用于沿着转印图案转印磁性气泡的转印图案的基板上，从而以低成本和简单的结构提供便携式气泡记录装置。此外，在装置上形成用于使装置与施加到装置的光束对准的对准图案，从而允许准确的写入和读取。传送通道的图案的周边部分具有相对于基板表面倾斜的表面，以便有利地转移磁性气泡。此外，提供一种装置，其中第一传送通道包括不彼此交叉的多个传送通道，以及与构成第一传送通道的传送通道相交的第二传送通道，以便顺利地进行光学读写并以高速度。

50. 发明授权

US4974201A Process for transferring bloch lines formed in a magnetic wall of a magnetic domain, and a magnetic memory apparatus for recording and reproduction of information by transferring bloch lines in utilizing said transferring process 失效
标题翻译：用于转印形成在磁畴的磁壁中的卷曲线的方法，以及用于通过在利用所述转印过程中转印卷曲线来记录和再现信息的磁存储装置
公开(公告)号：US4974201A
公开(公告)日：1990-11-27
申请号：US72668
申请日：1987-07-13
申请人： Takeo Ono , Hitoshi Oda
发明人： Takeo Ono , Hitoshi Oda
IPC分类号： G11C19/08
CPC分类号： G11C19/0841
摘要： A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall. As a result, the Bloch lines so written are transferred in succession to another location in the domain or to a read-out area.
摘要翻译：公开了一种用于传输形成在磁畴的磁壁中的Bloch线和用于在形成在磁畴的磁壁中的Bloch线作为信息载体来记录/再现信息的磁存储装置的处理。该方法包括在磁壁中形成正或负磁荷区域的步骤，从而将Bloch线连接到该区域，并移动磁荷区域，从而移动Bloch线。该装置包括具有条形磁畴的存储器衬底，根据输入信息将Bloch线写入条形磁畴的磁壁中的方式，读取如此存储的Bloch线以便再现信息的方式电信号的形式和将平行于存储器基板的平面的旋转磁场施加到条形磁畴的方式，以沿着磁壁移动布洛赫线。因此，如此写入的Bloch行连续转移到域中的另一个位置或读取区域。

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