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51. 发明申请

US20090197017A1 Deposition Method and Method for Manufacturing Light-Emitting Device 有权
标题翻译：制造发光装置的沉积方法和方法
公开(公告)号：US20090197017A1
公开(公告)日：2009-08-06
申请号：US12362105
申请日：2009-01-29
申请人： Koichiro TANAKA , Takahiro IBE , Kohei YOKOYAMA , Hisao IKEDA , Norifumi TAKESUE
发明人： Koichiro TANAKA , Takahiro IBE , Kohei YOKOYAMA , Hisao IKEDA , Norifumi TAKESUE
IPC分类号： B01J19/12
CPC分类号： H01L51/0013 , B05D5/12 , B41M5/38214 , C23C14/048 , H01L51/56
摘要： A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate.
摘要翻译：提供一种第一基板，其包括具有开口的反射层，光吸收层和在一个表面上与所述光吸收层接触形成的材料层; 形成材料层的第一基板的表面和第二基板的沉积目标表面相对配置; 并且从第一基板的另一表面侧进行重复频率大于或等于10MHz并且脉冲宽度大于或等于100fs且小于或等于10ns的激光的照射，以选择性地加热在与反射层的开口重叠的位置处的材料层的一部分，并将材料层的一部分沉积在第二基板的沉积靶表面上。

52. 发明申请

US20090191694A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20090191694A1
公开(公告)日：2009-07-30
申请号：US12356575
申请日：2009-01-21
申请人： Koichiro TANAKA
发明人： Koichiro TANAKA
IPC分类号： H01L21/71
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer.
摘要翻译：用离子照射单晶半导体衬底的表面以形成受损区域，在单晶半导体衬底的表面上形成绝缘层，并且使具有绝缘表面的衬底的表面与绝缘层的表面，以将具有绝缘表面的衬底结合到单晶半导体衬底。然后，通过进行热处理，在具有绝缘面的基板上形成单晶半导体层，在损伤区域分离单晶半导体基板，对单晶半导体层进行图案化，形成多个岛状半导体层。用形成为完全覆盖岛状半导体层的激光束照射其中一个岛状半导体层。

53. 发明授权

US07566669B2 Laser irradiation apparatus and laser irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US07566669B2
公开(公告)日：2009-07-28
申请号：US10584472
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B1/00 , B23K26/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.
摘要翻译：本发明的目的是提供一种能够通过改变照射光束在照射的前后方向上的能量强度来制造均质结晶膜的激光照射装置。本发明的激光照射装置包括激光振荡器和用于改变光束强度的装置，其中激光束倾斜地入射到照射表面中，激光束相对于照射表面被扫描，并且光束强度根据扫描方向。此外，激光振荡器是连续波固体激光器，气体激光器或金属激光器。也可以使用重复频率为10MHz以上的脉冲激光。

54. 发明授权

US07563661B2 Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体膜的结晶化方法，半导体装置的制造方法以及激光照射装置
公开(公告)号：US07563661B2
公开(公告)日：2009-07-21
申请号：US11657561
申请日：2007-01-25
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/84
CPC分类号： H01L27/1266 , B23K26/0613 , B23K26/0676 , B23K26/0738 , H01L21/0237 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02691 , H01L27/1255 , H01L27/1285
摘要： A semiconductor film formed over a substrate is irradiated by a first laser beam which is incident on a bottom surface of the substrate at an angle and by a second laser beam which is incident on the bottom surface of the substrate at an angle opposite that of the first laser beam and oscillated by an oscillator differing from that of the first laser beam; whereby, part of the semiconductor film is melted, and a portion of the semiconductor film being melted is moved while the positions of irradiation of the first and the second laser beams and are being scanned approximately along the direction of slant for the first laser beam or the second laser beam.
摘要翻译：在基板上形成的半导体膜以一定角度入射在基板的底面上的第一激光束和与基板的底面相反的角度的第二激光束照射第一激光束并且由与第一激光束不同的振荡器振荡; 由此半导体膜的一部分熔化，半导体膜熔化的一部分移动，同时第一和第二激光束的照射位置被大致沿第一激光束的倾斜方向扫描，或第二激光束。

55. 发明申请

US20090175299A1 SIGNAL DETECTION DEVICE AND SIGNAL DETECTION METHOD 有权
标题翻译：信号检测装置和信号检测方法
公开(公告)号：US20090175299A1
公开(公告)日：2009-07-09
申请号：US12298375
申请日：2007-04-23
申请人： Shuya Hosokawa , Naganori Shirakata , Koichiro Tanaka , Kenji Miyanaga , Koji Imamura
发明人： Shuya Hosokawa , Naganori Shirakata , Koichiro Tanaka , Kenji Miyanaga , Koji Imamura
IPC分类号： H04J3/06 , H04L27/06
CPC分类号： H04W56/0085 , H04L7/042 , H04L25/0224 , H04L27/261 , H04L27/2662 , H04W28/06 , H04W56/00
摘要： A correlation unit (32) sequentially obtains correlation values between a baseband signal and a reference signal and outputs the obtained reference signal to a section division unit (33). The output of the correlation unit (32) is divided into symbol time periods by the section division unit (33). A section position detection unit (34) detects a largest correlation value in each of sections resulting from the division by the correlation unit (32) and outputs, to a synchronization judgment unit (35), first position information that indicates a relative position of each detected largest correlation value. The synchronization judgment unit (35) detects an arrival of a packet signal and estimates a symbol timing based on the first position information of the sections.
摘要翻译：相关单元（32）顺序地获得基带信号和参考信号之间的相关值，并将获得的参考信号输出到区段划分单元（33）。相关单元（32）的输出由区段划分单元（33）分成符号时间段。区间位置检测单元（34）检测由相关单元（32）分割得到的每个区间中的最大相关值，并向同步判断单元（35）输出表示每个区域的相对位置的第一位置信息检测到最大相关值。同步判断单元（35）检测分组信号的到达，并基于各部分的第一位置信息来估计符号定时。

56. 发明申请

US20090166563A1 Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device 有权
标题翻译：制造蒸发供体基板和发光装置的方法
公开(公告)号：US20090166563A1
公开(公告)日：2009-07-02
申请号：US12341424
申请日：2008-12-22
申请人： Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
发明人： Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
IPC分类号： A61N5/067 , H01J1/62
CPC分类号： H01L51/0013 , C23C14/048 , H01L27/3244
摘要： An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
摘要翻译：一种蒸发供体基板，其通过蒸发法沉积时只能使期望的蒸发材料蒸发，并且能够通过提高蒸发材料的使用效率和高均匀性的沉积而降低制造成本。一种能够控制激光的蒸发施主基板，使得根据在蒸发时发射的激光的波长，用激光照射蒸发供体基板的期望位置。具体而言，在该激光的反射时，激光的反射区域和在波长为400nm以上且小于等于600nm的激光照射时的区域的蒸发供体基板形成蒸发时间。

57. 发明申请

US20090127477A1 Laser irradiation apparatus and laser irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US20090127477A1
公开(公告)日：2009-05-21
申请号：US11919748
申请日：2006-04-26
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： G03F7/20 , F21V5/04 , F21V14/00
CPC分类号： H01L27/1266 , B23K26/0738 , H01L21/0237 , H01L21/0268 , H01L21/268 , H01L27/1285
摘要： A laser beam having homogeneous intensity distribution is delivered without causing interference stripes of a laser to appear on an irradiation surface. A laser beam emitted from a laser oscillator passes through a diffractive optical element so that the intensity distribution thereof is homogenized. The beam emitted from the diffractive optical element then passes through a slit so that low-intensity end portions in a major-axis direction of the beam are blocked. Subsequently, the beam passes through a projecting lens and a condensing lens, so that an image of the slit is projected onto the irradiation surface. The projecting lens is provided so that the slit and the irradiation surface are conjugated. Thus, the irradiation surface can be irradiated with the laser having homogeneous intensity while preventing the diffraction by the slit.
摘要翻译：输送具有均匀强度分布的激光束，而不会使激光的干涉条纹出现在照射表面上。从激光振荡器发射的激光束通过衍射光学元件，使其强度分布均匀化。然后，从衍射光学元件发射的光束通过狭缝，使得光束的长轴方向的低强度端部被阻挡。随后，光束通过投影透镜和聚光透镜，使得狭缝的图像投影到照射表面上。投影透镜被设置成使狭缝和照射表面共轭。因此，可以用均匀强度的激光照射照射面，同时防止狭缝的衍射。

58. 发明授权

US07513949B2 Method and apparatus for producing semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US07513949B2
公开(公告)日：2009-04-07
申请号：US11124053
申请日：2005-05-09
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： C30B1/04
CPC分类号： H01L29/6675 , B23K26/702 , C30B1/00 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , Y10S117/904 , Y10T117/1004 , Y10T117/1008
摘要： An amorphous silicon film is formed on a flat glass substrate, and then crystallized by heating to obtain a crystalline silicon film. The glass substrate is placed on a stage having a convex U-shaped curved surface. The glass substrate is heated for a desired period of time at a temperature close to a strain point of the glass substrate, and then is cooled. Also, an amorphous silicon film formed on a glass substrate is crystallized into a crystalline silicon film by heating and then the glass substrate is mounted on a stage having a flat surface in such a manner that the lower surface of the glass substrate is in close contact with the flat surface of the stage by pressing the upper surface of the glass substrate. Then, a linear laser beam is irradiated on the crystalline silicon film in a scanning manner.
摘要翻译：在平坦玻璃基板上形成非晶硅膜，然后通过加热结晶，得到结晶硅膜。将玻璃基板放置在具有凸形的U形曲面的台上。在接近玻璃基板的应变点的温度下将玻璃基板加热所需的时间，然后冷却。此外，通过加热将形成在玻璃基板上的非晶硅膜结晶化为结晶硅膜，然后将玻璃基板安装在具有平坦表面的台上，使得玻璃基板的下表面紧密接触通过按压玻璃基板的上表面与平台的平坦表面。然后，以扫描方式将线性激光束照射在结晶硅膜上。

59. 发明申请

US20090017598A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090017598A1
公开(公告)日：2009-01-15
申请号：US12216622
申请日：2008-07-08
申请人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
发明人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

60. 发明申请

US20090016393A1 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20090016393A1
公开(公告)日：2009-01-15
申请号：US12000814
申请日：2007-12-18
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama , Koichiro Tanaka
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama , Koichiro Tanaka
IPC分类号： H01S3/22 , H01S3/00
CPC分类号： H01S3/131 , B23K26/702
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.
摘要翻译：本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率并计算振幅。在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

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