专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20100115674A1 ATOMIC FORCE MICROSCOPE APPARATUS 失效
标题翻译：原子力显微镜装置
公开(公告)号：US20100115674A1
公开(公告)日：2010-05-06
申请号：US12529903
申请日：2008-03-04
申请人： Hiroshi Fujimoto , Takashi Ooshima
发明人： Hiroshi Fujimoto , Takashi Ooshima
IPC分类号： G01Q60/24
CPC分类号： G01Q10/065 , G01Q60/363
摘要： An object of the present invention is to provide an atomic force microscope apparatus allowing tracking errors to be made as close to zero as possible to reduce images obtained through high-speed scanning from being degraded. To accomplish the object of the present invention, the present invention provides an atomic force microscope apparatus imaging a surface topography of a sample in a contact mode, the apparatus including a cantilever having a probe interacting with the sample surface via an atomic force and being subjected to a deflection by the atomic force, laser light provision means for allowing first laser light to enter the cantilever, light detection means, a controller estimating the surface topography of the sample surface, and data storage means for recording the estimated surface topography.
摘要翻译：本发明的目的是提供一种能够使跟踪误差尽可能接近零的原子力显微镜装置，以便通过高速扫描获得的图像降低。为了实现本发明的目的，本发明提供一种以接触模式对样品的表面形貌进行成像的原子力显微镜装置，该装置包括具有经由原子力与样品表面相互作用的探针的悬臂，通过原子力的偏转，用于允许第一激光进入悬臂的激光提供装置，光检测装置，估计样品表面的表面形貌的控制器和用于记录估计的表面形貌的数据存储装置。

52. 发明申请

US20100071099A1 ATOMIC FORCE MICROSCOPE AND INTERACTION FORCE MEASUREMENT METHOD USING ATOMIC FORCE MICROSCOPE 有权
标题翻译：使用原子力显微镜的原子力显微镜和相互作用力测量方法
公开(公告)号：US20100071099A1
公开(公告)日：2010-03-18
申请号：US12523661
申请日：2008-01-07
申请人： Masahiro Ota , Noriaki Oyabu , Masayuki Abe , Oscar Custance , Yoshiaki Sugimoto , Seizo Morita
发明人： Masahiro Ota , Noriaki Oyabu , Masayuki Abe , Oscar Custance , Yoshiaki Sugimoto , Seizo Morita
IPC分类号： G01Q60/24
CPC分类号： G01Q60/32 , G01Q30/04 , Y10S977/863
摘要： A frequency shift Δf obtained by an FM-AFM can be expressed by a simple linear coupling of a ΔfLR derived from a long-range interaction force and a ΔfSR derived from a short-range interaction force. Given this factor, a Δf curve on an atomic defect and a Δf curve on a target atom on the sample surface are each measured for only a relatively short range scale (S1 and S2), and a difference Δf curve of those two curves is obtained (S3). Since the difference Δf curve is derived only from a short-range interaction force, a known conversion operation is applied to this curve obtain an F curve which illustrates the relationship between the force and the distance Z, and then the short-range interaction force on the target atom is obtained from the F curve (S4). Since the range scale in measuring the Δf curve can be narrowed, the measurement time can be shortened, and since the conversion from the Δf curve into F curve is required only once, the computational time can also be shortened. Consequently, in obtaining the short-range interaction force which acts between the atom on the sample surface and the probe, the time required for the Δf curve's measurement and the computational time are shortened, which leads to accuracy improvement and throughput enhancement.
摘要翻译：通过FM-AFM获得的频移和Dgr f可以通过从远程相互作用力得到的＆Dgr; fLR和从短程相互作用力得到的＆Dgr; fSR的简单线性耦合来表示。考虑到这个因素，样品表面上的原子缺陷和目标原子上的＆Dgr; f曲线每个都只测量相对较短的范围尺度（S1和S2），并且差分Dgr f曲线得到这两条曲线（S3）。由于差值Dgr f曲线仅来自短距离相互作用力，因此将已知的转换操作应用于该曲线，获得F曲线，该F曲线说明了力与距离Z之间的关系，然后是短距离相互作用从F曲线获得目标原子上的力（S4）。由于可以缩小＆Dgr。f曲线的测量范围，所以可以缩短测量时间，由于从＆Dgr。f曲线到F曲线的转换只需要一次，所以计算时间也可以缩短。因此，在获得样品表面上的原子和探针之间作用的短程相互作用力时，缩短了＆Dgr。f曲线测量所需的时间和计算时间，从而提高了精度和提高了生产率。

53. 发明申请

US20100040847A1 METHODS UTILIZING SCANNING PROBE MICROSCOPE TIPS AND PRODUCTS THEREFOR OR PRODUCED THEREBY 有权
公开(公告)号：US20100040847A1
公开(公告)日：2010-02-18
申请号：US11933275
申请日：2007-10-31
申请人： Chad A MIRKIN , Richard Piner , Seunghun Hong
发明人： Chad A MIRKIN , Richard Piner , Seunghun Hong
IPC分类号： G01Q60/24 , B05D5/00 , B32B3/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN.The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

54. 发明申请

US20100031404A1 Scanning Probe Microscope With Periodically Phase-Shifted AC Excitation 有权
标题翻译：扫描探针显微镜与周期相移AC激发
公开(公告)号：US20100031404A1
公开(公告)日：2010-02-04
申请号：US12518417
申请日：2006-12-15
申请人： Jörg Rychen
发明人： Jörg Rychen
IPC分类号： G01Q60/24
CPC分类号： G01Q60/30 , G01Q10/065 , G01Q60/32
摘要： The scanning probe microscope applies a sum of an AC voltage (Uac) and a DC voltage (Udc) to its probe. The frequency of the AC voltage (Uac) substantially corresponds to the mechanical oscillation frequency of the probe, but its phase in respect to the mechanical oscillation varies periodically. The phase modulation has a frequency fmod. The microscope measures the frequency (f) or the amplitude (K) of a master signal (S) applied to the probe's actuator, or it measures the phase of the mechanical oscillation of the cantilever in respect to the master signal (S). The spectral component at frequency fmod of the measured signal is fed to a feedback loop controller, which strives to keep it zero by adjusting the DC voltage (Udc), thereby keeping the DC voltage at the contact voltage potential.
摘要翻译：扫描探针显微镜对其探头施加交流电压（Uac）和直流电压（Udc）的总和。交流电压（Uac）的频率基本上对应于探头的机械振荡频率，但其相对于机械振荡的相位周期性变化。相位调制具有频率fmod。显微镜测量施加到探头致动器的主信号（S）的频率（f）或振幅（K），或者测量相对于主信号（S）的悬臂的机械振荡的相位。测量信号的频率fmod的频谱分量被馈送到反馈回路控制器，通过调整直流电压（Udc）来努力保持零点，从而将直流电压保持在接触电压电位。

55. 发明申请

US20050247998A1 Three-dimensional structural body composed of silicon fine wire, its manufacturing method, and device using same 失效
标题翻译：由硅细丝组成的三维结构体，其制造方法和使用其的装置
公开(公告)号：US20050247998A1
公开(公告)日：2005-11-10
申请号：US10515334
申请日：2003-06-02
申请人： Hideki Kawakatsu , Dai Kobayashi
发明人： Hideki Kawakatsu , Dai Kobayashi
IPC分类号： G01G3/16 , B01J20/28 , B81B1/00 , B81C1/00 , B82B1/00 , B82B3/00 , G01K7/16 , G01L1/10 , G01N1/00 , G01Q30/10 , G01Q30/20 , G01Q60/24 , G01Q60/38 , G01Q60/54 , G01R33/02 , H01L27/14 , H01L29/00 , H01L29/82 , H01L29/84
CPC分类号： G01Q70/06 , G01Q60/38 , Y10S438/947
摘要： A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The three-dimensional structure composed of silicon fine wires includes wires (2) on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.
摘要翻译：提供了由高可靠性的硅超细线组成的三维结构，三维结构的制造方法和包括该三维结构的装置。由硅细丝组成的三维结构包括使用单晶材料的结晶度通过湿法蚀刻形成的数毫米至数微米的线（2）。

56. 发明授权

US06951130B2 Software synchronization of multiple scanning probes 失效
公开(公告)号：US06951130B2
公开(公告)日：2005-10-04
申请号：US11015945
申请日：2004-12-17
申请人： Casey Patrick Hare , Andrew Norman Erickson
发明人： Casey Patrick Hare , Andrew Norman Erickson
IPC分类号： G01Q10/00 , G01Q10/06 , G01Q30/04 , G01Q40/00 , G01Q60/24 , H01J3/14
CPC分类号： G01Q10/06 , G01Q30/04 , G01Q70/06 , Y10S977/85 , Y10S977/874
摘要： A method and apparatus for scanning multiple scanning probe microscopes in close proximity, to scan overlapping scan areas at the same time while avoiding collision employs a control system providing drive signals to a first Atomic Force Microscope (AFM) and calculated drive signals to additional AFMs based on the first drive signals and the relative position of the additional AFMs to the first AFM for consistent spaced motion. Scanning and Failure Analysis (FA) probing of multiple feature of interest using multiple APMs allows for reduced time for locating FA features to set up measurements.

57. 发明授权

US06950179B2 Shape measuring apparatus, shape measuring method, and aligning method 失效
标题翻译：形状测量装置，形状测量方法和对准方法
公开(公告)号：US06950179B2
公开(公告)日：2005-09-27
申请号：US10156921
申请日：2002-05-30
申请人： Hideki Ina , Koichi Sentoku , Takahiro Matsumoto
发明人： Hideki Ina , Koichi Sentoku , Takahiro Matsumoto
IPC分类号： G01B11/22 , B24B49/10 , B24B49/12 , G01B11/24 , G01B21/00 , G01B21/02 , G01B21/20 , G01Q10/02 , G01Q30/02 , G01Q60/00 , G01Q60/24 , G01Q60/34 , G01Q60/38 , G01Q80/00 , G03F9/00 , G01N21/00 , G01N23/00
CPC分类号： G01Q30/02 , B24B37/005 , B24B37/042 , B24B49/10 , B24B49/12 , G01B11/2441 , G01B21/20 , Y10S977/868
摘要： A shape measuring method for measuring a shape of a surface of an object. The method includes a first measuring step for measuring the surface of the object by detecting light from the object, and a second measuring step for measuring the surface of the object by relatively scanning a probe and the object. A scanning speed changes on the basis of the result of the first measurement step.
摘要翻译：一种用于测量物体表面形状的形状测量方法。该方法包括：第一测量步骤，用于通过检测来自物体的光来测量物体的表面;以及第二测量步骤，用于通过相对扫描探针和物体来测量物体的表面。基于第一测量步骤的结果，扫描速度改变。

58. 发明申请

US20050205776A1 AFM-based lithography metrology tool 有权
标题翻译：基于AFM的光刻计量工具
公开(公告)号：US20050205776A1
公开(公告)日：2005-09-22
申请号：US11129322
申请日：2005-05-16
申请人： Stephane Dana , Joseph Bach
发明人： Stephane Dana , Joseph Bach
IPC分类号： G01B5/28 , G01N23/00 , G01Q60/24 , G01Q80/00 , G03F7/20
CPC分类号： G03F7/70625 , G01Q80/00 , G03F7/70633
摘要： A photolithographic track system and method for semiconductor wafer manufacture having a plurality of stations for receiving a wafer for sequential processing, including a first group of stations for performing at least a part of a photolithography process. A metrology station is provided in a position of the track system after the first group of stations, for determining whether the processed wafer is within tolerance for at least one critical dimension. If not within tolerance, the wafer is moved by the track system to a stripping station for removal of at least one layer and a return to the beginning of the first group of stations for repeating the performance of a photolithography process. Parameters may also be adjusted for purposes of the repeated performance of the process. If within tolerance, the wafer may be moved for further processing, for example, baking or off loading.
摘要翻译：一种用于半导体晶片制造的光刻轨道系统和方法，具有用于接收用于顺序处理的晶片的多个站，包括用于执行至少一部分光刻工艺的第一组站。在第一组站之后的轨道系统的位置处提供测量站，用于确定处理的晶片是否在至少一个关键尺寸的容限内。如果不在公差范围内，则将晶片由轨道系统移动到剥离站，以移除至少一个层，并返回到第一组站的开头，以重复执行光刻工艺。也可以为了重复执行该过程而调整参数。如果在公差范围内，则晶片可以被移动用于进一步处理，例如烘烤或卸载。

59. 发明申请

US20050194534A1 Method of operating a probe microscope 审中-公开
标题翻译：操作探针显微镜的方法
公开(公告)号：US20050194534A1
公开(公告)日：2005-09-08
申请号：US11036768
申请日：2005-01-14
申请人： Eric Kneedler , Robert Linder , Leonid Vasilyev , Andreas Berghaus , Charles Bryson
发明人： Eric Kneedler , Robert Linder , Leonid Vasilyev , Andreas Berghaus , Charles Bryson
IPC分类号： G01B5/004 , G01B21/02 , G01B21/04 , G01B21/30 , G01Q10/00 , G01Q30/04 , G01Q40/00 , G01Q60/24 , G21K7/00 , H01J37/26 , H01L21/66
CPC分类号： G01Q30/04
摘要： A method of improving the precision and speed of probe microscopy. Direct geometric measurement of relevant date points allows more rapid determination of critical dimensions while improving measurement precision through minimized system drift. Precision and throughput is further improved by deflection-based measurement. Sensitivity to soft contacts is improved by using diagonal approach trajectories for the probe tip (20). And throughput is improved while risk of damage to tip and/or surface is reduced by using lateral force detection.
摘要翻译：提高探针显微镜精度和速度的方法。相关日期点的直接几何测量可以更快速地确定关键尺寸，同时通过最小化的系统漂移提高测量精度。通过基于偏移的测量进一步提高了精度和产量。通过使用探针尖端（20）的对角线方向轨迹可以改善对软触点的灵敏度。并且通过使用侧向力检测来降低通过尖端和/或表面损伤的风险，并且提高吞吐量。

60. 发明申请

US20050109747A1 Laser scribing and machining of materials 审中-公开
标题翻译：激光划线和加工材料
公开(公告)号：US20050109747A1
公开(公告)日：2005-05-26
申请号：US10969167
申请日：2004-10-20
申请人： Dennis Alexander
发明人： Dennis Alexander
IPC分类号： B23K26/06 , B23K26/067 , B23K26/12 , B23K26/16 , G01Q60/24 , G01Q70/10 , B23K26/00
CPC分类号： B23K26/0613 , B23K26/0619 , B23K26/0624 , B23K26/067 , B23K26/1224 , B23K26/16 , B23K26/364
摘要： Disclosed are systems and methods for directing laser energy to surfaces of materials via elements which have sharp points, and for reducing the adverse effects of particles which become dislodged by scribing and laser machining of materials.
摘要翻译：公开了通过具有尖锐点的元件将激光能量引导到材料表面的系统和方法，以及用于减少通过划线和激光加工材料而脱落的颗粒的不利影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式