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61. 发明申请

US20180315748A1 ESD PROTECTION OF MEMS FOR RF APPLICATIONS 审中-公开
公开(公告)号：US20180315748A1
公开(公告)日：2018-11-01
申请号：US15771245
申请日：2016-11-14
申请人： CAVENDISH KINETICS, INC.
发明人： Roberto GADDI , James Douglas HUFFMAN , Chenhui NIU , Ray PARKHURST
IPC分类号： H01L27/02 , H01H1/00 , H01H9/54 , B81B7/02
CPC分类号： H01H1/0036 , H01H59/0009 , H01L27/0248
摘要： The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

62. 发明授权

US10038415B2 Power amplifier matching circuit with DVCs 有权
公开(公告)号：US10038415B2
公开(公告)日：2018-07-31
申请号：US15516995
申请日：2015-09-23
申请人： CAVENDISH KINETICS, INC.
发明人： Ray Parkhurst
IPC分类号： H03F3/191 , H03F1/56 , H03F3/195 , H03F3/213
CPC分类号： H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/102 , H03F2200/387 , H03F2200/451 , H03H7/40 , H03H2007/013
摘要： Embodiments disclosed herein generally relate to power amplifier matching circuits used for matching impedance and harmonic control in a device, such as a cellular phone. In one example, a power amplifier matching circuit includes two DVCs, four inductors, a transistor, and a capacitor. Utilizing the two DVCs, the impedance matching ratio and the center frequency of the circuit are capable of adjustment as needed. Moreover, the inclusion of the two DVCs may also prevent harmonic frequencies from undesirably passing through the power amplifier matching circuit to the antenna of a cellular device. The power amplifier matching circuit may be used in conjunction with an amplifier, where the output of the amplifier is proportional to the current in the circuit.

63. 发明授权

US09754724B2 Stress control during processing of a MEMS digital variable capacitor (DVC) 有权
公开(公告)号：US09754724B2
公开(公告)日：2017-09-05
申请号：US14898678
申请日：2014-06-04
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01L49/02 , H01G5/16 , H01G5/18
CPC分类号： H01G5/16 , H01G5/18 , H01L28/60
摘要： The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

64. 发明授权

US09711291B2 MEMS digital variable capacitor design with high linearity 有权
公开(公告)号：US09711291B2
公开(公告)日：2017-07-18
申请号：US14779542
申请日：2014-04-02
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Robertus Petrus Van Kampen
IPC分类号： H01G5/18 , B81B3/00 , H01G5/16 , H01H59/00 , H01G5/011 , H01G5/013
CPC分类号： H01G5/18 , B81B3/0051 , B81B3/007 , B81B2201/0221 , H01G5/011 , H01G5/0136 , H01G5/16 , H01H59/0009 , H01H2059/0072
摘要： The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

65. 发明申请

US20160221823A1 METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 有权
标题翻译：在电介质和有机材料之间实现良好粘合的方法
公开(公告)号：US20160221823A1
公开(公告)日：2016-08-04
申请号：US15024942
申请日：2014-09-15
申请人： CAVENDISH KINETICS, INC
发明人： Mickael RENAULT
IPC分类号： B81C1/00
CPC分类号： B81C1/0038 , B81C1/00801 , B81C2201/0108 , B81C2201/0176 , B81C2201/053
摘要： The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.
摘要翻译：本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。牺牲材料最终被去除以释放空腔中的开关元件。开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。在制造期间，介电层沉积在牺牲材料上。为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

66. 发明申请

US20160207763A1 METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 有权
标题翻译：在MEMS器件中形成平面非晶材料的方法
公开(公告)号：US20160207763A1
公开(公告)日：2016-07-21
申请号：US14914504
申请日：2014-09-02
申请人： CAVENDISH KINETICS, INC.
发明人： Brian I. TROY , James F. BOBEY , Mickael RENAULT , Joseph Damian Gordon LACEY , Thomas L. MAGUIRE
IPC分类号： B81C1/00 , H01G5/16
CPC分类号： B81C1/00611 , H01G5/16
摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.
摘要翻译：本发明一般涉及制造MEMS器件的方法。在MEMS装置中，可动板设置在空腔内，使得可移动板可在空腔内移动。为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。去除牺牲材料以使可移动板在空腔内移动。由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

67. 发明申请

US20160200565A1 RF MEMS ELECTRODES WITH LIMITED GRAIN GROWTH 审中-公开
标题翻译：具有有限晶粒生长的RF MEMS电极
公开(公告)号：US20160200565A1
公开(公告)日：2016-07-14
申请号：US14914071
申请日：2014-08-27
申请人： CAVENDISH KINETICS, INC
发明人： Mickael RENAULT
IPC分类号： B81B7/00 , B81C1/00 , H01G5/18 , B81B3/00
CPC分类号： B81B7/0006 , B81B3/0078 , B81B2201/0221 , B81C1/00095 , B81C1/00341 , H01G5/18 , H01H1/0036 , H01H59/0009 , H01H2001/0052 , H01H2001/0084
摘要： The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.
摘要翻译：本发明一般涉及RF MEMS DVC及其制造方法。为了确保不发生不期望的晶粒生长并且有助于不均匀的RF电极，可以使用包括AlCu层和包含钛的层的多层堆叠。钛在更高的温度下扩散到AlCu层中，使得AlCu的晶粒生长将被抑制，并且开关元件可以以一致的结构制造，这在操作期间导致一致的可预测的电容。

68. 发明申请

US20160115014A1 NON-SYMMETRIC ARRAYS OF MEMS DIGITAL VARIABLE CAPACITOR WITH UNIFORM OPERATING CHARACTERISTICS 审中-公开
标题翻译：具有均匀运算特性的MEMS数字可变电容器的非对称阵列
公开(公告)号：US20160115014A1
公开(公告)日：2016-04-28
申请号：US14895182
申请日：2014-05-30
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus VAN KAMPEN
IPC分类号： B81B3/00 , H01G5/16
CPC分类号： B81B3/0086 , B81B2201/0221 , B81B2203/04 , H01G5/16 , H01G5/18 , H01G5/38 , H01H59/0009
摘要： The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.
摘要翻译：本发明一般涉及一种MEMS DVC。 MEMS DVC具有RF电极并且形成在CMOS衬底之上。为了降低RF信号中的噪声，连接在波形控制器和MEMS元件的电极之间的多电阻器可以被隔离的p阱或隔离的n阱包围。隔离的阱耦合到设置在多电阻器和MEMS元件之间的RF接地屏蔽。由于存在围绕多电阻器的隔离阱，衬底电阻不影响MEMS DVC中每个MEMS元件的动态特性，并且降低了RF信号中的噪声。

69. 发明申请

US20160065058A1 TWO-STATE CHARGE-PUMP CONTROL-LOOP FOR MEMS DVC CONTROL 有权
标题翻译：用于MEMS DVC控制的双状态充电泵控制环路
公开(公告)号：US20160065058A1
公开(公告)日：2016-03-03
申请号：US14783281
申请日：2014-04-02
申请人： CAVENDISH KINETICS, INC
发明人： Robertus Petrus VAN KAMPEN , Cong Quoc KHIEU , James Douglas HUFFMAN , Richard L. KNIPE
IPC分类号： H02M3/07 , B81B7/00
CPC分类号： H02M3/07 , B81B7/00 , B81B7/008 , B81B2201/014 , B81B2203/0109
摘要： The present invention generally relates to a DVC having a charge-pump coupled to a MEMS device. The charge-pump is designed to control the output voltage delivered to the electrodes, such as the pull-in electrode or the pull-off electrode, that move the switching element within the MEMS device between locations spaced far from and disposed closely to the RF electrode.
摘要翻译：本发明一般涉及具有耦合到MEMS器件的电荷泵的DVC。电荷泵被设计成控制传递到电极的输出电压，例如拉入电极或拉出电极，其将MEMS器件内的开关元件移动到与RF紧密相邻的位置处电极。

70. 发明申请

US20150235771A1 VARIABLE CAPACITOR COMPROMISING MEMS DEVICES FOR RADIO FREQUENCY APPLICATIONS 有权
标题翻译：可变电容器用于无线电频率应用的MEMS器件
公开(公告)号：US20150235771A1
公开(公告)日：2015-08-20
申请号：US14420152
申请日：2013-08-07
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01G5/16 , H01G5/38
CPC分类号： H01G5/16 , H01G5/18 , H01G5/38 , H01L27/01 , H01L27/0207 , H01L27/0805 , H01L28/60 , H01L2924/0002 , H01L2924/19041 , H01L2924/19104 , H01L2924/0001
摘要： A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.
摘要翻译：可变电容器（300）包括具有耦合到接合焊盘（30）的RF电极（202,402）的电池（200,400）。每个单元包括多个MEMS器件（100），其电容可以通过可移动电极来改变。 MEMS器件被放置在电池的密封空腔中并且沿着电池的RF电极的长度彼此相邻地布置。可以对每个单元的RF电极进行修整，以获得RF线（402）和另外的接地电极（404），以便在不影响MEMS单元的机械性能的情况下缩放电池的RF电容。每个单元都具有与RF电容无关的相同的控制电容。这允许每个单元使用RF操作所需的相同的隔离电阻，因此每个单元具有相同的寄生电容。这允许CMOS控制电路被优化并且电池的动态性能匹配。

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