专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20140252298A1 METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHING MEMORY DEVICES 审中-公开
标题翻译：金属氧化物可逆电阻开关存储器件的方法和装置
公开(公告)号：US20140252298A1
公开(公告)日：2014-09-11
申请号：US13792100
申请日：2013-03-10
申请人： SANDISK 3D LLC
发明人： Yubao Li , Chu-Chen Fu , Timothy James Minvielle , Huiwen Xu
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1675
摘要： In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.
摘要翻译：在一些方面，提供一种存储单元，其包括第一导电层，位于第一导电层上方的可逆电阻开关元件，可逆电阻开关元件上方的第二导电层以及围绕可逆电阻开关侧壁设置的衬垫元件。可逆电阻切换元件包括第一金属氧化物材料，并且衬垫包括第一金属氧化物材料。提供了许多其他方面。

62. 发明授权

US08823076B2 Dense arrays and charge storage devices 有权
标题翻译：密集阵列和电荷存储设备
公开(公告)号：US08823076B2
公开(公告)日：2014-09-02
申请号：US14227425
申请日：2014-03-27
申请人： SanDisk 3D LLC
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald
IPC分类号： H01L29/792 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译：提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。

63. 发明申请

US20140241035A1 RERAM FORMING WITH RESET AND ILOAD COMPENSATION 有权
标题翻译： RERAM与复制和国际劳工组织的赔偿
公开(公告)号：US20140241035A1
公开(公告)日：2014-08-28
申请号：US13781503
申请日：2013-02-28
申请人： SANDISK 3D LLC
发明人： Chang Siau
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C7/20 , G11C13/0064 , G11C13/0069 , G11C29/028 , G11C2013/0083 , G11C2013/0088
摘要： FORMING reversible resistivity-switching elements is described herein. The FORMING voltage may be halted if the current through the memory cell reaches some reference current. The reference current may depend on how many groups of memory cells have been FORMED. This can help to increase the accuracy of determining when to halt the FORMING voltage. After the FORMING voltage is applied, a RESET voltage may be applied to those memory cells that have a resistance that is lower than a reference resistance to raise the resistance of those memory cells. By raising the resistance, the leakage current of these memory cells when other groups are programmed may be less. This, in turn, helps to prevent FORMING of the other groups from slowing down. A reason why this helps to prevent the slowdown is that the FORMING voltage may be kept near a desired level.
摘要翻译：这里描述了形成可逆电阻率开关元件。如果通过存储单元的电流达到某个参考电流，则可能会停止FORMING电压。参考电流可能取决于已经形成了多少组存储器单元。这有助于提高确定何时停止FORMING电压的准确性。在施加FORMING电压之后，可以将RESET电压施加到具有低于参考电阻的电阻的那些存储单元，以提高那些存储单元的电阻。通过提高电阻，当其他组被编程时，这些存储器单元的漏电流可能较小。这反过来又有助于防止其他群体的形成减慢。为什么这有助于防止减速的原因是，FORMING电压可能保持在所需的水平附近。

64. 发明申请

US20140233329A1 COMPENSATION SCHEME FOR NON-VOLATILE MEMORY 有权
公开(公告)号：US20140233329A1
公开(公告)日：2014-08-21
申请号：US13773078
申请日：2013-02-21
申请人： SANDISK 3D LLC
发明人： Yingchang Chen , Pankaj Kalra , Chandrasekhar Gorla
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C7/00 , G11C11/56 , G11C11/5678 , G11C13/00 , G11C13/0004 , G11C13/0023 , G11C13/0038 , G11C13/0069 , G11C2013/0076
摘要： Methods for performing parallel voltage and current compensation during reading and/or writing of memory cells in a memory array are described. In some embodiments, the compensation may include adjusting a bit line voltage and/or bit line reference current applied to a memory cell based on a memory array zone, a bit line layer, and a memory cell direction associated with the memory cell. The compensation may include adjusting the bit line voltage and/or bit line reference current on a per memory cell basis depending on memory cell specific characteristics. In some embodiments, a read/write circuit for reading and/or writing a memory cell may select a bit line voltage from a plurality of bit line voltage options to be applied to the memory cell based on whether the memory cell has been characterized as a strong, weak, or typical memory cell.

65. 发明授权

US08809159B2 Radiation enhanced resistive switching layers 有权
标题翻译：辐射增强电阻开关层
公开(公告)号：US08809159B2
公开(公告)日：2014-08-19
申请号：US13722155
申请日：2012-12-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： H01L21/20
CPC分类号： H01L45/1253 , H01L27/2463 , H01L45/08 , H01L45/146 , H01L45/1641
摘要： Provided are radiation enhanced resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming these layers and cells. Radiation creates defects in resistive switching materials that allow forming and breaking conductive paths in these materials thereby improving their resistive switching characteristics. For example, ionizing radiation may break chemical bonds in various materials used for such a layer, while non-ionizing radiation may form electronic traps. Radiation power, dozing, and other processing characteristics can be controlled to generate a distribution of defects within the resistive switching layer. For example, an uneven distribution of defects through the thickness of a layer may help with lowering switching voltages and/or currents. Radiation may be performed before or after thermal annealing, which may be used to control distribution of radiation created defects and other types of defects in resistive switching layers.
摘要翻译：提供了辐射增强的电阻式开关层，包括这些层的电阻随机存取存储器（ReRAM）单元，以及形成这些层和单元的方法。辐射在电阻开关材料中产生缺陷，允许在这些材料中形成和断开导电路径，从而提高其电阻开关特性。例如，电离辐射可以破坏用于这种层的各种材料中的化学键，而非电离辐射可以形成电子陷阱。可以控制辐射功率，打盹等处理特性，以产生电阻式开关层内的缺陷分布。例如，通过层的厚度的缺陷的不均匀分布可能有助于降低开关电压和/或电流。可以在热退火之前或之后进行辐射，其可以用于控制电阻开关层中辐射产生的缺陷和其他类型的缺陷的分布。

66. 发明申请

US20140224645A1 MULTIFUNCTIONAL ELECTRODE 有权
标题翻译：多功能电极
公开(公告)号：US20140224645A1
公开(公告)日：2014-08-14
申请号：US14254155
申请日：2014-04-16
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译：公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。至少一个电极是包含亚化学计量的过渡金属氮化物或氧氮化物的电阻电极，并且电阻率在0.1和10Ω之间。电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。还公开了用于第二电极的新颖制造方法。

67. 发明申请

US20140217491A1 DENSE ARRAYS AND CHARGE STORAGE DEVICES 有权
公开(公告)号：US20140217491A1
公开(公告)日：2014-08-07
申请号：US14227425
申请日：2014-03-27
申请人： SANDISK 3D LLC
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

68. 发明授权

US08796103B2 Forming nonvolatile memory elements by diffusing oxygen into electrodes 有权
标题翻译：通过将氧气扩散到电极中形成非易失性存储元件
公开(公告)号：US08796103B2
公开(公告)日：2014-08-05
申请号：US13721476
申请日：2012-12-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L21/16
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.
摘要翻译：提供了形成包括电阻切换层的非易失性存储元件的方法。一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。作为该扩散的结果，前体层被转换成电阻切换层。前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。至少在退火之前，反应电极可以基本上不含氧。在氢气存在下，可以在250-400℃下进行退火。这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

69. 发明申请

US20140192585A1 Resistive Random Access Memory Cell Having Three or More Resistive States 有权
标题翻译：具有三个或更多电阻状态的电阻随机存取存储单元
公开(公告)号：US20140192585A1
公开(公告)日：2014-07-10
申请号：US13738061
申请日：2013-01-10
申请人： INTERMOLECULAR INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： Imran Hashim , Ryan C. Clarke , Nan Lu , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/146 , G11C11/56 , G11C11/5685 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2213/32 , G11C2213/71 , G11C2213/77 , H01L45/08 , H01L45/1233 , H01L45/1253
摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

70. 发明授权

US08773898B2 Methods and apparatus for reducing programming time of a memory cell 有权
标题翻译：减少存储单元编程时间的方法和装置
公开(公告)号：US08773898B2
公开(公告)日：2014-07-08
申请号：US13890622
申请日：2013-05-09
申请人： SanDisk 3D LLC
发明人： Tyler J. Thorp , Roy E. Scheuerlein
IPC分类号： G11C13/00
CPC分类号： G11C7/12 , G11C7/065 , G11C8/08 , G11C13/0004 , G11C13/0023 , G11C13/0061 , G11C13/0069
摘要： A method is provided for programming a memory cell having a first terminal coupled to a word line and a second terminal coupled to a bit line. During a first predetermined time interval, the word line is switched from a first standby voltage to a first voltage, the bit line is switched from a second standby voltage to a predetermined voltage, and a voltage drop across the first and second terminals is a safe voltage that does not program the memory cell. During a second predetermined time interval, the word line is switched from the first voltage to a second voltage, and a voltage drop across the first and second terminals is a programming voltage that is sufficient to program the memory cell. Numerous other aspects are provided.
摘要翻译：提供了一种用于对具有耦合到字线的第一端子和耦合到位线的第二端子的存储单元进行编程的方法。在第一预定时间间隔期间，字线从第一备用电压切换到第一电压，位线从第二待机电压切换到预定电压，并且跨第一和第二端子的电压降是安全的不对存储单元进行编程的电压。在第二预定时间间隔期间，字线从第一电压切换到第二电压，并且跨越第一和第二端子的电压降是足以编程存储器单元的编程电压。提供了许多其他方面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式