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61. 发明授权

US09459435B2 Catadioptric projection objective comprising deflection mirrors and projection exposure method 有权
标题翻译：折反射投影物镜包括偏转镜和投影曝光方法
公开(公告)号：US09459435B2
公开(公告)日：2016-10-04
申请号：US15005286
申请日：2016-01-25
申请人： Carl Zeiss SMT GmbH
发明人： Thomas Schicketanz , Toralf Gruner
IPC分类号： G03B27/54 , G03B27/42 , G02B17/08 , G03F7/20
CPC分类号： G02B17/0892 , G02B13/14 , G02B17/08 , G02B17/0896 , G03F1/26 , G03F7/702 , G03F7/70225 , G03F7/70258 , G03F7/70266 , G03F7/70275 , G03F7/70308 , G03F7/70316 , G03F7/70441 , G03F7/70791
摘要： A catadioptric projection objective has a multiplicity of lenses and at least one concave mirror, and also two deflection mirrors in order to separate a partial beam path running from the object field to the concave mirror from the partial beam path running from the concave mirror to the image field. The deflection mirrors are tilted relative to the optical axis of the projection objective about tilting axes running parallel to a first direction (x-direction). The first deflection mirror is arranged in optical proximity to a first field plane and the second deflection mirror is arranged in optical proximity to a second field plane, which is optically conjugate with respect to the first field plane. A displacement device for the synchronous displacement of the deflection mirrors is provided. The deflection mirrors have different local distributions of their reflection properties in first and second reflection regions, respectively.
摘要翻译：反射折射投射物镜具有多个透镜和至少一个凹面镜，以及两个偏转镜，以便将从物镜场延伸的部分光束路径与从凹面镜到图像字段。偏转镜相对于投影物镜的光轴相对于平行于第一方向（x方向）延伸的倾斜轴线倾斜。第一偏转镜被布置成光接近第一场平面，并且第二偏转镜布置成光学接近于相对于第一场平面光学共轭的第二场平面。提供了用于偏转镜的同步位移的位移装置。偏转镜在第一反射区域和第二反射区域中的反射特性分别具有不同的局部分布。

62. 发明授权

US09377696B2 Extreme ultraviolet lithography process and mask 有权
标题翻译：极紫外光刻工艺和面膜
公开(公告)号：US09377696B2
公开(公告)日：2016-06-28
申请号：US14047341
申请日：2013-10-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03B27/54 , G03B27/62 , G03F7/20 , G03F1/24 , G03F1/48
CPC分类号： G03F7/70283 , G03F1/24 , G03F1/48 , G03F1/54 , G03F7/2004 , G03F7/70091 , G03F7/70158 , G03F7/703
摘要： A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states. A reflection coefficient is r1, r2 and r3, respectively, wherein r3 is close to (r1+r2)/2. The system also includes a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light, removing most of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.
摘要翻译：公开了一种极紫外光刻（EUVL）系统。该系统包括具有三种状态的极紫外（EUV）掩模。反射系数分别为r1，r2和r3，其中r3接近（r1 + r2）/ 2。该系统还包括具有部分相干性的近轴上照明（ONI）小于0.3以暴露EUV掩模以产生衍射光和非衍射光，去除大部分非衍射光，并通过投影光学盒（POB）收集和引导衍射光和未去除的非衍射光，露出目标。

63. 发明授权

US09377693B2 Collector in an extreme ultraviolet lithography system with optimal air curtain protection 有权
标题翻译：极紫外光刻系统中的收集器，具有最佳的气幕保护
公开(公告)号：US09377693B2
公开(公告)日：2016-06-28
申请号：US14208156
申请日：2014-03-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Ching Huang , Tsung-Yu Chen , Chia-Hao Hsu , Shinn-Sheng Yu , Chia-Chen Chen
IPC分类号： G03B27/54 , G03F7/20 , H05G2/00
CPC分类号： G03F7/70033 , H05G2/005 , H05G2/008
摘要： The present disclosure provides an extreme ultraviolet (EUV) radiation source module. The EUV radiation source module includes a collector designed to collect and reflect EUV light; a solid cover integrated with the collector and configured to have a supply gap between the collector and the solid cover; and a gas pipeline integrated with the collector. The supply gap provides a path for gas flow to the radiation source at edge of the collector. The gas pipeline includes an inward entrance and an outward entrance.
摘要翻译：本公开提供了一种极紫外（EUV）辐射源模块。 EUV辐射源模块包括收集和反射EUV光的收集器; 与收集器集成并构造为在收集器和固体盖之间具有供给间隙的固体盖; 和与收集器集成的气体管道。供应间隙为收集器边缘处的气体流向辐射源提供了一条路径。气体管道包括向内的入口和向外的入口。

64. 发明授权

US09360774B2 Lithographic apparatus with a deformation sensor 有权
标题翻译：具有变形传感器的平版印刷设备
公开(公告)号：US09360774B2
公开(公告)日：2016-06-07
申请号：US13720369
申请日：2012-12-19
申请人： ASML Netherlands B.V.
发明人： Johannes Hendrikus Maria Spruit , Ruud Antonius Catharina Maria Beerens , Richard Henricus Adrianus Van Lieshout , Cristian Dan
IPC分类号： G03B27/68 , G03B27/54 , G03B27/58 , G03B27/62 , G03F7/20 , G03B27/52
CPC分类号： G03F7/70783 , G03B27/522 , G03F7/7085
摘要： Disclosed is a lithographic apparatus comprising a member susceptible to deformation and a deformation sensor for measuring a deformation of said member. The deformation sensor comprises a first birefringence sensing element arranged to be subjected to stress in dependency of the deformation of said member and a light system configured to transmit polarized light through the first birefringence sensing element, wherein said polarized light has a first polarization state prior to being transmitted through the first birefringence sensing element. The deformation sensor further comprises a detector for detecting a second polarization state of the polarized light after being transmitted through the first birefringence sensing element and a calculation unit to determine the deformation of said member based on the first and second polarization state.
摘要翻译：公开了一种包括易于变形的构件的光刻设备和用于测量所述构件的变形的变形传感器。变形传感器包括第一双折射感测元件，其被布置为根据所述构件的变形而受到应力，以及被配置为透射偏振光通过第一双折射感测元件的光系统，其中所述偏振光具有第一偏振态通过第一双折射检测元件透射。变形传感器还包括检测器，用于检测通过第一双折射检测元件透射后的偏振光的第二偏振态，以及计算单元，用于基于第一和第二偏振状态确定所述构件的变形。

65. 发明授权

US09354502B2 Lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method for providing setpoint data and a computer program 有权
标题翻译：光刻设备，用于提供设定点数据的设备，设备制造方法，用于提供设定点数据的方法和计算机程序
公开(公告)号：US09354502B2
公开(公告)日：2016-05-31
申请号：US14360888
申请日：2012-12-13
申请人： ASML Netherlands B.V.
发明人： Erik Roelof Loopstra , Martinus Hendricus Hoeks
IPC分类号： G03B27/32 , G03B27/54 , G03B27/72 , G03F7/20
CPC分类号： G03B27/72 , G03B27/32 , G03F7/70291 , G03F7/70391 , G03F7/70508
摘要： An apparatus or method to calculate target dose values of a plurality of radiation beams at a plurality of different times in order to form a desired dose pattern on a target, each target dose value defining the dose distribution of a spot exposure formed by the radiation beam to which the target dose value is applied, wherein a nominal position of a characteristic point in the dose distribution of each of the spot exposures lies at a point of a spot exposure grid, and to provide target dose values at the resolution of the spot exposure grid by calculating target dose values at grid points on a lower resolution grid, the lower resolution grid having a resolution lower than the spot exposure grid, and for each of the calculated target dose values, deriving a target dose value at each of a plurality of points in the spot exposure grid.
摘要翻译：一种用于在多个不同时间计算多个辐射束的目标剂量值以便在靶上形成所需剂量图案的装置或方法，每个目标剂量值定义由辐射束形成的斑点曝光的剂量分布其中施加目标剂量值，其中每个斑点曝光的剂量分布中的特征点的标称位置位于点曝光栅格的点处，并且在点曝光的分辨率下提供目标剂量值网格通过计算较低分辨率网格上的网格点处的目标剂量值，分辨率低于点曝光网格的分辨率网格，以及针对每个计算的目标剂量值，在多个点曝光网格。

66. 发明授权

US09341961B2 Cross technology reticle (CTR) or multi-layer reticle (MLR) CDU, registration, and overlay techniques 有权
标题翻译：交叉技术标线（CTR）或多层掩模版（MLR）CDU，注册和覆盖技术
公开(公告)号：US09341961B2
公开(公告)日：2016-05-17
申请号：US13839894
申请日：2013-03-15
申请人： Guo Xiang Ning , Arthur Hotzel , Paul Ackmann , Soon Yoeng Tan
发明人： Guo Xiang Ning , Arthur Hotzel , Paul Ackmann , Soon Yoeng Tan
IPC分类号： G03B27/32 , G03B27/54 , G03F1/00 , G06F17/50 , G03F7/20 , G03F1/70 , G03F1/38 , G03F1/50
CPC分类号： G03F7/2022 , G03F1/00 , G03F1/38 , G03F1/50 , G03F1/70 , G03F7/70283 , G03F7/70433
摘要： Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.
摘要翻译：公开了减少掩模传输差异并优化用于覆盖在MTR和CTR中的层布置的方法。实施例包括提供具有主区域和围绕主区域的框区域的掩模版; 确定黄金地区的RT差异; 并在掩模版上提供RT调整结构以减少RT差异。其他实施例包括分组半导体生产流程的多个层，每个组的层具有小于预定值的RT差; 并且通过从单个组中选择针对每个掩模版的层，并且优化用于覆盖的层的布置，将层布置在掩模版组的多个有序掩模版上，每个掩模具具有多个图像场。其他实施例包括在具有多个图像场的掩模版上选择性地旋转图像场，以通过将每个设计方向放置在不同的掩模版上来改善覆盖，或优化DDL在CTR上的放置。

67. 发明授权

US09341807B2 Gravitation compensation for optical elements in projection exposure apparatuses 有权
标题翻译：投影曝光装置中的光学元件的重力补偿
公开(公告)号：US09341807B2
公开(公告)日：2016-05-17
申请号：US14484696
申请日：2014-09-12
申请人： Carl Zeiss SMT GmbH
发明人： Norbert Muehlberger , Thorsten Rassel , Armin Schoeppach , Juergen Fischer , Matthias Orth
IPC分类号： G03B27/42 , G03B27/54 , G02B7/00 , G03F7/20 , G02B13/14 , G02B13/16
CPC分类号： G02B7/001 , G02B13/143 , G02B13/16 , G03F7/70825
摘要： A gravitation compensator for mounting optical elements in a projection exposure apparatus and a corresponding projection exposure apparatus are disclosed. The gravitation compensator at least partly compensates for the weight force of a mounted optical element and simultaneously enables a change in the position of the optical element without the compensated weight force being altered in an impermissible manner during the change in position. This applies, in particular, to high weight forces which are to be compensated. Furthermore, the gravitation compensator enables use in different atmospheres and the compensation of corresponding aging effects.
摘要翻译：公开了一种用于在投影曝光设备和相应的投影曝光设备中安装光学元件的引力补偿器。重力补偿器至少部分地补偿安装的光学元件的重量，并且同时能够改变光学元件的位置，而不会在位置改变期间以不允许的方式改变补偿的重量。这尤其适用于要补偿的高重量力。此外，引力补偿器可以在不同的环境中使用，并补偿相应的老化效应。

68. 发明授权

US09341756B2 Method for correcting the surface form of a mirror 有权
标题翻译：校正镜子表面形状的方法
公开(公告)号：US09341756B2
公开(公告)日：2016-05-17
申请号：US14026486
申请日：2013-09-13
申请人： CARL ZEISS SMT GmbH
发明人： Juergen Mueller , Thomas Schicketanz , Dirk Heinrich Ehm
IPC分类号： G03B27/54 , G03B27/32 , G02B5/08 , G02B27/00 , G03F7/20 , G21K1/06 , B82Y10/00
CPC分类号： G02B5/0816 , B82Y10/00 , G02B5/0891 , G02B27/0025 , G03F7/70166 , G03F7/70191 , G03F7/70233 , G03F7/70308 , G03F7/70958 , G21K1/062
摘要： A method for correcting a surface form of a mirror (1) for reflecting radiation in the wavelength range of 5-30 nm, which includes: applying a correction layer (13) having a layer thickness variation (21) for correcting the mirror's surface form, and applying a first group (19) of layers to the correction layer. The first group (19) of layers includes first (9) and second (11) layers arranged alternately one above another, wherein the first layers have a refractive index at the operating wavelength which is greater than the refractive index of the second layers for that radiation.The correction layer (13) is applied by: introducing the mirror into an atmosphere including a reaction gas (15), applying a correction radiation (17) having a location-dependent radiation energy density, such that a correction layer having a location-dependent layer thickness variation (21) grows on the mirror's irradiated surface.
摘要翻译：一种用于校正反射镜（1）的表面形式的方法，用于反射5-30nm的波长范围内的辐射，其包括：施加具有用于校正反射镜表面形式的层厚度变化（21）的校正层（13），以及将第一组（19）层应用于所述校正层。层的第一组（19）包括彼此交替布置的第一层（9）层和第二层（11）层，其中第一层在工作波长处的折射率大于第二层的折射率，为此，辐射。通过以下方式施加校正层（13）：将反射镜引入包括反应气体（15）的气氛中，施加具有位置相关辐射能量密度的校正辐射（17），使得具有位置相关层厚度变化（21）在镜子的照射表面上生长。

69. 发明授权

US09323156B2 Optical system of a microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置的光学系统
公开(公告)号：US09323156B2
公开(公告)日：2016-04-26
申请号：US13661381
申请日：2012-10-26
申请人： Carl Zeiss SMT GmbH
发明人： Ingo Saenger , Olaf Dittmann , Joerg Zimmermann
IPC分类号： G03B27/54 , G03F7/20
CPC分类号： G03F7/70116 , G03F7/70566
摘要： An optical system of a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes a polarization-influencing optical arrangement including a first lambda/2 plate and at least one additional lambda/2 plate.
摘要翻译：微光刻投影曝光装置的光学系统包括具有多个镜元件的至少一个反射镜装置，所述多个反射镜元件可彼此独立地移位，以改变由反射镜装置反射的光的角分布。光学系统还包括偏振影响光学装置，其包括第一λ/ 2板和至少一个附加的λ/ 2板。

70. 发明授权

US09323039B2 Particle manipulation system and projection device 有权
标题翻译：粒子操纵系统和投影装置
公开(公告)号：US09323039B2
公开(公告)日：2016-04-26
申请号：US14072802
申请日：2013-11-06
申请人： Industrial Technology Research Institute
发明人： Hsiu-Hsiang Chen , Hsin-Hsiang Lo , Chun-Chuan Lin , Kuo-Yao Weng , Chi-Shen Chang , Jyh-Chern Chen
IPC分类号： G03B27/54 , G02B21/32 , G02B15/22 , G02B21/08 , G03B21/16 , G03B21/28 , G03B21/20
CPC分类号： G02B21/32 , G02B15/22 , G02B21/086 , G03B21/16 , G03B21/2033 , G03B21/28
摘要： A particle manipulation system and a projection device are provided. The projection device includes an image source and a projection lens. The image source provides an image beam. The projection lens is disposed on a light path of the image beam and includes a zoom lens set and a focusing lens set. The zoom lens set is disposed on the light path of the image beam from the image source and includes at least two lens groups disposed in sequence on the light path of the image beam. The focusing lens set is disposed on the light path of the image beam. The zoom lens set is disposed between the image source and the focusing lens set. A photoconductor chip is disposed on the light path of the image beam from the projection lens.
摘要翻译：提供了粒子操纵系统和投影装置。投影装置包括图像源和投影透镜。图像源提供图像束。投影透镜设置在图像光束的光路上，并且包括变焦透镜组和聚焦透镜组。变焦透镜组设置在来自图像源的图像束的光路上，并且包括依次设置在图像光束的光路上的至少两个透镜组。聚焦透镜组设置在图像光束的光路上。变焦透镜组设置在图像源和聚焦透镜组之间。光电导体芯片设置在来自投影透镜的图像束的光路上。

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