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71. 发明授权

US5585729A Fluid concentration detecting apparatus 失效
标题翻译：流体浓度检测装置
公开(公告)号：US5585729A
公开(公告)日：1996-12-17
申请号：US061713
申请日：1993-05-13
申请人： Masato Toshima , Hiroji Hanawa , Jerry Wong
发明人： Masato Toshima , Hiroji Hanawa , Jerry Wong
IPC分类号： G01N27/02 , G01R33/00
CPC分类号： G01N27/023
摘要： An apparatus is disclosed for determining the concentration of a fluid. In one aspect of the invention an apparatus for detecting the ionic concentration of a fluid is provided. The ionic concentration detecting apparatus may include a resonance coil or other suitable receiver that arranged to be influence by the fluid being monitored. The resonance coil is driven by a high frequency signal having a frequency in the range of 10-100 MHz. A detector is provided to measure the losses experienced by the resonance coil. In another aspect of the invention, an ultrasonic based density detecting apparatus for detecting the density of the fluid is provided. The ionic concentration detecting device may be used in conjunction with the density determining device to provide concentration detecting capabilities for solutions having multiple constituents. One particularly beneficial application of the invention is for determining the concentration of an acidic solution used in a wafer wet cleaning step of a semiconductor fabrication process.
摘要翻译：公开了一种用于确定流体浓度的装置。在本发明的一个方面，提供一种用于检测流体的离子浓度的装置。离子浓度检测装置可以包括共振线圈或其他合适的接收器，其被布置成被被监测的流体影响。谐振线圈由频率在10-100MHz范围内的高频信号驱动。提供检测器来测量谐振线圈经历的损耗。在本发明的另一方面，提供一种用于检测流体密度的基于超声波的密度检测装置。离子浓度检测装置可以与密度确定装置结合使用，以提供具有多个成分的溶液的浓度检测能力。本发明的一个特别有益的应用是确定在半导体制造工艺的晶片湿式清洗步骤中使用的酸性溶液的浓度。

72. 发明授权

US08900405B2 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US08900405B2
公开(公告)日：2014-12-02
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

73. 发明申请

US20130087093A1 APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA 审中-公开
标题翻译：使用等离子体进行HVPE加工的装置和方法
公开(公告)号：US20130087093A1
公开(公告)日：2013-04-11
申请号：US13456547
申请日：2012-04-26
申请人： Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人： Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
IPC分类号： C30B25/10 , C30B25/02
CPC分类号： C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C30B25/10 , C30B25/14 , C30B29/406
摘要： Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.
摘要翻译：本发明的实施方案一般涉及使用高温气体分配装置和等离子体产生形成活化的前体气体的氢化物气相外延（HVPE）装置，其用于在衬底的表面上快速形成高质量的复合氮化物层。在一个实施例中，在注入HVPE装置的处理区域之前，在气体分配装置内由含氮前体形成等离子体。在另一个实施方案中，通过使用气体分配装置作为在处理区域中形成等离子体的电极，在处理区域内由含氮前体形成等离子体。在每个实施例中，第二前体气体可以在进入处理区域之前通过气体分配装置分别引入到HVPE设备的处理区域中，而不与含氮前体混合。

74. 发明申请

US20130032085A1 PLASMA ASSISTED HVPE CHAMBER DESIGN 审中-公开
标题翻译：等离子体辅助HVPE室设计
公开(公告)号：US20130032085A1
公开(公告)日：2013-02-07
申请号：US13456693
申请日：2012-04-26
申请人： Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人： Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
IPC分类号： C30B25/14 , C30B25/02
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/452 , C30B25/105 , C30B25/14 , C30B29/403
摘要： Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.
摘要翻译：本文公开的本发明的实施例通常涉及氢化物气相外延（HVPE）沉积室，其利用等离子体产生装置形成活化的前体气体，其用于在衬底的表面上快速形成高质量的复合氮化物层。在一个实施例中，等离子体产生装置用于产生可以增强沉积反应动力学，从而减少处理时间并改善形成的III族金属氮化物层的膜质量的期望的III族金属卤化物前体气体。此外，腔室可以配备有单独的含氮前体活化物质发生器，以增强所输送的氮前体气体的活性。

75. 发明授权

US08279577B2 Substrate support having fluid channel 有权
标题翻译：具有流体通道的基板支撑
公开(公告)号：US08279577B2
公开(公告)日：2012-10-02
申请号：US12849012
申请日：2010-08-02
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H01T23/00
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/16 , H01J37/32504 , H01J37/32862 , H01J37/32871 , H01J2237/022 , H01L21/6875 , H01L21/68757 , Y10T428/24 , Y10T428/31678
摘要： A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.
摘要翻译：用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道。下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。

76. 发明授权

US08080479B2 Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator 失效
标题翻译：通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性
公开(公告)号：US08080479B2
公开(公告)日：2011-12-20
申请号：US11733858
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
摘要翻译：在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

77. 发明申请

US20110259879A1 Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers 审中-公开
标题翻译：多区域感应加热用于改善MOCVD和HVPE室中的温度均匀性
公开(公告)号：US20110259879A1
公开(公告)日：2011-10-27
申请号：US13092800
申请日：2011-04-22
申请人： Hiroji Hanawa , Kyawwin Jason Maung , Karl Brown
发明人： Hiroji Hanawa , Kyawwin Jason Maung , Karl Brown
IPC分类号： H05B6/10 , C23C16/458 , C30B35/00 , C23C16/46
CPC分类号： H05B6/105 , C23C16/4584 , C23C16/46 , C30B25/10
摘要： Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing chamber. By utilizing multiple heating zones that are each separately powered, the temperature distribution across the susceptor, over which the substrates rotate, may be uniform. The heat sources may be disposed outside of the processing chamber. In one embodiment, a processing chamber is provided which includes a susceptor disposed adjacent a first side of a window, a substrate carrier coupled with the susceptor, an inner inductive heating element disposed adjacent a second side of the window opposite the first side, an outer inductive heating element separate from and encompassing the inner inductive heating element and disposed adjacent to the second side of the window, and a parasitic load ring positioned below the outer inductive heating element.
摘要翻译：本发明的实施例一般涉及利用多个感应热源来均匀加热处理室内的多个基板的装置和方法。通过利用各自分别供电的多个加热区，基板旋转的基座上的温度分布可以是均匀的。热源可以设置在处理室的外部。在一个实施例中，提供了处理室，其包括邻近窗口的第一侧设置的基座，与基座耦合的基板载体，与第一侧相对的第二侧附近设置的内部感应加热元件，感应加热元件与内部感应加热元件分离并且包围内部感应加热元件并且邻近窗口的第二侧设置，以及位于外部感应加热元件下方的寄生负载环。

78. 发明授权

US07989329B2 Removal of surface dopants from a substrate 有权
标题翻译：从基底去除表面掺杂物
公开(公告)号：US07989329B2
公开(公告)日：2011-08-02
申请号：US11963034
申请日：2007-12-21
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/38
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

79. 发明授权

US07968439B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US07968439B2
公开(公告)日：2011-06-28
申请号：US12069424
申请日：2008-02-06
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

80. 发明授权

US07967996B2 Process for wafer backside polymer removal and wafer front side photoresist removal 失效
标题翻译：用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
公开(公告)号：US07967996B2
公开(公告)日：2011-06-28
申请号：US11801409
申请日：2007-05-08
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
IPC分类号： B44C1/22
CPC分类号： B08B7/00 , B08B7/0035 , H01J37/32357 , H01J37/3244 , H01L21/0206 , H01L21/02063 , H01L21/0209 , H01L21/67069 , H01L21/67115 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
摘要翻译：提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物到晶圆背面。对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂。

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