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71. 发明授权

US06937506B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US06937506B2
公开(公告)日：2005-08-30
申请号：US10753539
申请日：2004-01-08
申请人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
发明人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
IPC分类号： G11C11/02 , G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/08
CPC分类号： G11C11/15
摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
摘要翻译：一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量。

72. 发明授权

US06909633B2 MRAM architecture with a flux closed data storage layer 失效
标题翻译：具有磁通闭合数据存储层的MRAM架构
公开(公告)号：US06909633B2
公开(公告)日：2005-06-21
申请号：US10688664
申请日：2003-10-16
申请人： David Tsang
发明人： David Tsang
IPC分类号： G11C20060101 , G11C11/02 , G11C11/15 , G11C11/16 , G11C11/22 , H01L23/48
CPC分类号： G11C11/16
摘要： A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.
摘要翻译：公开了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储器单元并且提供与多个磁存储单元耦合的至少一个磁写入线。每个磁存储单元包括具有数据存储层的磁性元件。数据存储层磁性存储数据。磁写入线与至少相应磁存储器单元的磁性元件的数据存储层静磁耦合。因此，对于多个磁存储单元中的每一个的数据存储层，实质上实现了磁通闭合。

73. 发明申请

US20050122767A1 Memory device 有权
标题翻译：内存设备
公开(公告)号：US20050122767A1
公开(公告)日：2005-06-09
申请号：US10727273
申请日：2003-12-03
申请人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
发明人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
IPC分类号： G11C7/04 , G11C11/00 , G11C11/02 , G11C11/15 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells configured to provide resistive states, and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and categorize the sense result into one of at least three different categories comprising a middle category situated between the resistive states.
摘要翻译：本发明的实施例提供一种磁存储器。在一个实施例中，磁存储器包括被配置为提供电阻状态的存储器单元的阵列和读取电路。读取电路被配置为感测通过存储器单元阵列中的存储器单元的电阻以获得感测结果，并将感测结果分类为包括位于电阻状态之间的中间类别的至少三个不同类别中的一个。

74. 发明申请

US20050117409A1 Selecting a magnetic memory cell write current 有权
公开(公告)号：US20050117409A1
公开(公告)日：2005-06-02
申请号：US10725803
申请日：2003-12-02
申请人： Frederick Perner
发明人： Frederick Perner
IPC分类号： G11C11/15 , G11C7/04 , G11C7/22 , G11C11/00 , G11C11/02 , G11C11/16 , G11C29/00 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/16
摘要： The invention includes an apparatus and method for selecting a desirable magnitude of a magnetic memory cell write current. The method includes determining a minimal magnitude of write current for writing to the magnetic memory cell, determining a maximal magnitude of write current for writing to the magnetic memory cell, and calculating the selected magnitude of magnetic memory cell write current based on the minimal magnitude of write current and the maximal magnitude of write current.

75. 发明授权

US06876574B2 Magnetoresistive device and electronic device 失效
标题翻译：磁阻器件和电子器件
公开(公告)号：US06876574B2
公开(公告)日：2005-04-05
申请号：US10228602
申请日：2002-08-27
申请人： Carsten Giebeler , Kars-Michiel Hubert Lenssen , Stephan Johann Zilker , Reinder Coehoorn
发明人： Carsten Giebeler , Kars-Michiel Hubert Lenssen , Stephan Johann Zilker , Reinder Coehoorn
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/82 , H01L43/08 , H01L43/10 , G11C11/02 , H01L31/119
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C13/0014 , G11C13/025 , H01F10/32 , H01F10/3254 , H01L29/82 , H01L43/08 , H01L43/10
摘要： A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
摘要翻译：具有横向结构并且设置有有机半导体材料的非磁性间隔层（3）的磁阻器件（11）允许附加电极（19）的存在。利用该电极（19），将开关功能集成到装置（11）中。优选地，存在用于保护铁磁层（1,2）的导电层（13,23）。磁阻装置（11）适于集成到阵列中以用作MRAM装置。

76. 发明申请

US20050052905A1 Magnetic memory cell structure 有权
公开(公告)号：US20050052905A1
公开(公告)日：2005-03-10
申请号：US10658158
申请日：2003-09-08
申请人： Lung Tran , Thomas Anthony
发明人： Lung Tran , Thomas Anthony
IPC分类号： G11C11/15 , G11C11/00 , G11C11/02 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
CPC分类号： G11C11/16
摘要： The invention includes a magnetic memory cell. The magnetic memory cell includes a reference layer having a preset magnetization. A barrier layer is formed adjacent to the reference layer. A sense layer is formed adjacent to the barrier layer. A first conductive write line is electrically connected to the reference layer. The magnetic memory cell further includes a second conductive write line having a gap, the gap being filled by at least a portion of the sense layer. A write current conducting through the second conductive write line is at least partially conducted through the portion of the sense layer, the write current increasing a temperature of the sense layer.

77. 发明申请

US20050020011A1 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US20050020011A1
公开(公告)日：2005-01-27
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

78. 发明授权

US5446687A Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom 失效
标题翻译：用于将数据存储为数据磁场的极化的数据存储介质，以及使用自旋极化电子将数据存储到数据存储介质上并从其读取的方法和装置
公开(公告)号：US5446687A
公开(公告)日：1995-08-29
申请号：US188828
申请日：1994-01-31
申请人： Thomas D. Hurt , Scott A. Halpine
发明人： Thomas D. Hurt , Scott A. Halpine
IPC分类号： G11B5/00 , G11B5/64 , G11B9/10 , G11B11/11 , G11B11/115 , G11B13/04 , G11B19/04 , G11B20/18 , G11B23/28 , G11C11/02 , G11C11/23 , H01J3/02 , G11C13/04
CPC分类号： G11B5/65 , G11B11/11 , G11B11/115 , G11B19/04 , G11B20/1883 , G11B23/28 , G11B5/00 , G11B5/64 , G11B5/653 , G11B5/656 , G11B9/10 , G11C11/02 , G11C11/23 , H01J3/02 , G11B13/045 , H01J2203/0296 , H01J2237/06383
摘要： A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
摘要翻译：一种数据存储介质，包括形成在基板上的基板和数据存储层。数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。在数据存储层中创建数据磁场。数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到将电子磁场的极化方向赋予数据磁场。通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

79. 发明授权

US4772505A Magnetic bubble memory element 失效
标题翻译：磁性气泡记忆元件
公开(公告)号：US4772505A
公开(公告)日：1988-09-20
申请号：US897368
申请日：1986-08-18
申请人： Haruhiko Matsuyama , Fusaji Shoji , Hiroshi Umezaki , Masatoshi Takeshita , Naoki Koyama , Ryo Suzuki
发明人： Haruhiko Matsuyama , Fusaji Shoji , Hiroshi Umezaki , Masatoshi Takeshita , Naoki Koyama , Ryo Suzuki
IPC分类号： C08G73/10 , G11B7/2542 , G11B7/257 , H01F10/30 , H01F41/32 , G11C11/02
CPC分类号： G11B7/2542 , C08G73/1064 , C08G73/1067 , C08G73/1071 , G11B7/252 , H01F10/30 , H01F41/32 , G11B2007/2571 , G11B2007/25715 , Y10S428/90 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/31681 , Y10T428/31721 , Y10T428/31765
摘要： The inclination angle, in the conductor pattern end portion of a magnetic bubble memory element having a bubble diameter of up to 1.2 .mu.m, can be remarkably reduced by employing a polymer resin, having fluidity in a curing process, as the insulation film under the conductor pattern, so that the transfer margin is greatly improved.
摘要翻译：通过使用在固化过程中具有流动性的聚合物树脂作为泡沫直径为1.2μm的气泡存储元件的导体图案端部中的绝缘膜，倾斜角度可以显着地降低导体图案，使转印幅度大大提高。

80. 发明授权

US4263374A Temperature-stabilized low-loss ferrite films 失效
标题翻译：温度稳定的低损耗铁氧体膜
公开(公告)号：US4263374A
公开(公告)日：1981-04-21
申请号：US918298
申请日：1978-06-22
申请人： Howard L. Glass , Michael T. Elliott , Rodney D. Henry
发明人： Howard L. Glass , Michael T. Elliott , Rodney D. Henry
IPC分类号： H01F10/00 , H01F10/18 , H01F10/20 , H01F10/22 , H01F10/24 , H01F10/26 , H01F41/28 , G11C11/02
CPC分类号： H01F10/26 , H01F10/00 , H01F10/18 , H01F10/20 , H01F10/205 , H01F10/22 , H01F10/24 , H01F41/28 , Y10S428/90
摘要： In the preferred embodiment, a monocrystalline film of substituted yttrium iron garnet (YIG) deposited on a oriented gadolinium gallium garnet (GGG) substrate is formulated so that the temperature variation of the ferromagnetic resonance frequency of the film has an ordinary minimum. For a range of temperature variations about the temperature at which the minimum occurs, therefore, the resonance frequency of the film is relatively insensitive to variations in temperature. This minimum is believed to occur where the temperature variations of the demagnetizing effect and the temperature variations of anisotropy effects more or less counterbalance each other. The counter-balancing effects are brought within range of each other primarily by the substitution of gallium or aluminum for iron and substitution of lanthanum for yttrium in the substituted YIG. Gallium or aluminum reduces the temperature drift of the saturation magnetization. Lanthanum adjusts the misfit stress and thus the anisotropy effects.
摘要翻译：在优选实施例中，配置沉积在<11>取向钆镓石榴石（GGG）衬底上的取代的钇铁石榴石（YIG）的单晶膜，使得膜的铁磁共振频率的温度变化具有普通的最小值。因此，对于发生最小值的温度的温度变化范围，膜的共振频率对温度变化相对不敏感。据信这种最小值发生在退磁效应的温度变化和各向异性的温度变化或多或少地相互抵消的地方。反平衡效应主要通过用镓或铝代替铁和在取代的YIG中用镧取代钇而在彼此的范围内。镓或铝可降低饱和磁化的温度漂移。镧调节失配应力，从而调节各向异性效应。

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