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1. 发明授权

US07771647B2 Electric microcontact printing method and apparatus 有权
标题翻译：电微接触印刷方法和装置
公开(公告)号：US07771647B2
公开(公告)日：2010-08-10
申请号：US10316997
申请日：2002-12-11
申请人： Heiko O. Jacobs , George M. Whitesides
发明人： Heiko O. Jacobs , George M. Whitesides
IPC分类号： H05B6/54 , G11C11/23 , B41J2/385
CPC分类号： G03G5/02 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002
摘要： A method and apparatus for providing electric microcontact printing is provided. A stamp is brought into contact with the surface of a substrate to provide high resolution features. Aspects of the invention may be used for data storage, microcontact printing, and for other applications requiring high resolution pattern transfer.
摘要翻译：提供了一种用于提供电微接触印刷的方法和装置。使印模与基板的表面接触以提供高分辨率特征。本发明的各方面可用于数据存储，微接触印刷以及需要高分辨率图案转印的其它应用。

2. 发明授权

US6025857A Photosensitive member and electrostatic information recording method 失效
标题翻译：感光元件和静电信息记录方法
公开(公告)号：US6025857A
公开(公告)日：2000-02-15
申请号：US520854
申请日：1995-08-30
申请人： Hiroyuki Obata , Minoru Utsumi , Kohji Ichimura
发明人： Hiroyuki Obata , Minoru Utsumi , Kohji Ichimura
IPC分类号： G03G5/02 , G03G15/05 , G11C11/23 , B41J2/385 , B41J2/415 , G01D15/06 , G03G15/01
CPC分类号： G11C11/23 , G03G15/05 , G03G5/02 , G03G5/0202
摘要： A photosensitive member which has an electrode provided on the front side and a photoconductive layer stacked on the electrode, the photosensitive member being disposed face-to-face with an electrostatic information recording medium that includes a charge retaining layer having an electrode provided on the rear side, either in or out of contact with each other, to carry out exposure with a voltage being applied between the two electrodes, thereby forming an electrostatic charge pattern on the electrostatic information recording medium in accordance with an exposure light pattern. The layer arrangements of the photosensitive member and the photoconductive layer as well as the method of forming the photoconductive layer are improved so that electrostatic information can be recorded on the electrostatic information recording medium with high sensitivity and it is also possible to improve the contrast ratio of the information charge at the exposed region to that at the unexposed region.
摘要翻译：具有设置在前侧的电极和层叠在电极上的光电导层的感光构件，感光构件与静电信息记录介质面对面设置，静电信息记录介质包括具有设置在后面的电极的电荷保持层在彼此接触或不接触的情况下，以施加在两个电极之间的电压进行曝光，从而根据曝光光图案在静电信息记录介质上形成静电电荷图案。感光构件和光电导层的层布置以及形成光电导层的方法得到改善，使得静电信息可以高灵敏度地记录在静电信息记录介质上，并且还可以提高静电信息记录介质的对比度在暴露区域的信息电荷与未曝光区域的信息电荷。

3. 发明授权

US5838020A Method and apparatus for storing data using spin-polarized electrons 失效
公开(公告)号：US5838020A
公开(公告)日：1998-11-17
申请号：US641418
申请日：1996-05-01
申请人： Thomas D. Hurt
发明人： Thomas D. Hurt
IPC分类号： G11B7/00 , G11B5/00 , G11B5/012 , G11B5/64 , G11B7/004 , G11B9/10 , G11B11/10 , G11B11/11 , G11B11/115 , G11B13/04 , G11B19/04 , G11B20/18 , G11B23/28 , G11C11/02 , G11C11/16 , G11C11/23 , H01J3/02 , H01J29/48 , H01J31/60 , H01L29/06
CPC分类号： G11B5/65 , G11B11/11 , G11B11/115 , G11B19/04 , G11B20/1883 , G11B23/28 , G11B5/00 , G11B5/64 , G11B5/653 , G11B5/656 , G11B9/10 , G11C11/02 , G11C11/23 , H01J3/02 , H01J31/60 , G11B13/045 , H01J2203/0296 , H01J2237/06383
摘要： A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

4. 发明授权

US5355127A Method and apparatus for transferring information by utilizing electron beam 失效
标题翻译：利用电子束传送信息的方法和装置
公开(公告)号：US5355127A
公开(公告)日：1994-10-11
申请号：US902783
申请日：1992-06-24
申请人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
发明人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
IPC分类号： G11C7/00 , G11C11/23 , H03K19/14 , H04Q1/00
CPC分类号： H03K19/14 , G11C11/23 , G11C7/005
摘要： In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. In the method and apparatus, a deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, Logical multiplications, image formation, and the like.
摘要翻译：在用于以电子束形式传送信息的方法和装置中，电子束检测器检测电子束，并且在检测到电子束时根据来自检测器的信号来控制来自预定电子束源的电子束的发射电子束。在该方法和装置中，偏转电极还用于根据电场或磁场偏转电子束，以执行电荷转移，逻辑加法，逻辑乘法，图像形成等。

5. 发明授权

US4672578A Method of information recording on a semiconductor wafer 失效
标题翻译：在半导体晶片上记录信息的方法
公开(公告)号：US4672578A
公开(公告)日：1987-06-09
申请号：US582540
申请日：1984-02-22
申请人： Chusuke Munakata , Kunihiro Yagi , Masaru Miyazaki , Shiyouzou Yoneda
发明人： Chusuke Munakata , Kunihiro Yagi , Masaru Miyazaki , Shiyouzou Yoneda
IPC分类号： G11C17/00 , G03C1/705 , G11B7/241 , G11B9/08 , G11B11/00 , G11C11/23 , G11C11/30 , G11C11/42 , G11C13/04 , H01L31/08 , H04N1/21 , G11C11/34
CPC分类号： H01L31/08 , G03C1/705 , G11B11/00 , G11B7/241 , G11B9/08 , G11C11/23 , G11C13/04 , H04N1/2108 , G11B2007/2571 , G11B2007/25715
摘要： An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.
摘要翻译：提供了一种信息记录方法，其中p型或n型半导体晶片被诸如电子束的能量粒子束照射，从而控制例如在照射区域处的表面光电压的产生减少或增加，使得信息可以记录在晶片上。

6. 发明授权

US4197144A Method for improving writing of information in memory targets 失效
标题翻译：改善记忆目标信息写入的方法
公开(公告)号：US4197144A
公开(公告)日：1980-04-08
申请号：US944385
申请日：1978-09-21
申请人： Conilee G. Kirkpatrick , George E. Possin , Virgil L. Stout
发明人： Conilee G. Kirkpatrick , George E. Possin , Virgil L. Stout
IPC分类号： G11C11/23 , H01L21/28 , H01L21/3115 , G11C11/42 , H01L29/78
CPC分类号： H01L21/28185 , G11C11/23 , H01L21/28176 , H01L21/31155 , Y10S148/024 , Y10S148/093 , Y10S148/128 , Y10S438/91
摘要： The amount of charge written into the insulator layer of an electron-beam-addressed metal-insulator-semiconductor target is increased by increasing the number of defects in the insulator to provide additional charge trapping and storage sites. Ion implantation techniques for accomplishing the increase of charge trapping sites are disclosed.
摘要翻译：通过增加绝缘体中的缺陷数量来增加写入电子束寻址的金属 - 绝缘体 - 半导体靶的绝缘体层的电荷量，以提供额外的电荷俘获和存储位置。公开了用于实现电荷捕获位点增加的离子注入技术。

7. 发明授权

US4133047A System for storing and retrieving information at the molecular level 失效
标题翻译：用于在分子水平存储和检索信息的系统
公开(公告)号：US4133047A
公开(公告)日：1979-01-02
申请号：US549450
申请日：1975-02-12
申请人： Cyrus Levinthal
发明人： Cyrus Levinthal
IPC分类号： G11B9/10 , G11B11/00 , G11C11/23 , G11C13/02 , G11C13/04 , G11C11/26
CPC分类号： G11C13/0014 , B82Y10/00 , G11B11/005 , G11B9/10 , G11C11/23 , G11C13/048
摘要： Dislosed is a system for retrievably storing information in a storage medium comprising a laterally extending regular lattice of substantially identical units. Each unit is approximately the size of a large biological molecule or a virus (i.e. several hundred Angstroms or less), and can in fact be a single biological molecule, a single virus, or an equivalent particle or aggregate. Any individual unit can be selectively modified by a narrowly focused electron beam without affecting adjacent units, to thereby store (write in) information as a pattern of modified lattice units. After a lattice has been so modified, it can be stabilized by depositing thereon a thin metallic layer, and the stored information can be read out by a detecting electron beam.

8. 发明授权

US4100573A Thermal imaging transducer and system 失效
标题翻译：热成像传感器和系统
公开(公告)号：US4100573A
公开(公告)日：1978-07-11
申请号：US724487
申请日：1976-09-20
申请人： J. Louis Berger
发明人： J. Louis Berger
IPC分类号： G11C8/00 , G11C11/23 , G11C27/02 , H04N5/33
CPC分类号： G11C27/024 , G11C11/23 , G11C27/02 , G11C8/005
摘要： A wedge of ferroelectric material is used as a thermal imaging transducer by plating a multiplicity of signal generating electrodes to the surface of the ferroelectric wedge. The wedge is electronically polarized using a descending voltage and thermal images are read out of the transducer using an ascending voltage ramp of opposite polarity from the polarizing voltage. Readout is obtained without requiring mechanical panning or thermal image interruption even if the subject is stationary.
摘要翻译：通过将多个信号产生电极电镀到铁电楔的表面上，将铁电材料楔用作热成像换能器。使用下降电压对楔形物进行电子极化，并且使用与极化电压相反极性的上升电压斜坡从传感器读出热图像。即使被摄体处于静止状态，也不需要机械摇摄或热图像中断而获得读数。

9. 发明授权

US4064495A Ion implanted archival memory media and methods for storage of data therein 失效
标题翻译：离子注入存档介质及其中存储数据的方法
公开(公告)号：US4064495A
公开(公告)日：1977-12-20
申请号：US669404
申请日：1976-03-22
申请人： Conilee G. Kirkpatrick , James F. Norton , George E. Possin
发明人： Conilee G. Kirkpatrick , James F. Norton , George E. Possin
IPC分类号： G11C17/00 , G11C11/23 , H01L21/265 , H01L27/102 , H01L29/06 , G11C17/06 , G11C11/36
CPC分类号： G11C11/23 , H01L21/26586 , H01L27/1021 , H01L29/0684 , Y10S257/926
摘要： A non-volatile archival memory storage media has a planar junction diode structure into which are written a plurality of diode bits permanently formed at or beneath the top surface thereof by selective ion implantation. Each of the plurality of ion implanted regions represents a data bit of a first binary value, with the remaining un-implanted regions of the planar diode representing data bits of the remaining binary value. The permanently stored data is read by inducing a flow of current by recombination phenomena responsive to a scanning electron beam sequentially incident on each of the possible data bit sites of an array of such sites in the planar diode. Wide bandwidth methods for writing the ion implantation sites into the planar diode media are disclosed.
摘要翻译：非易失性存档存储介质具有平面结二极管结构，其中通过选择性离子注入在其顶表面上或下方永久地形成多个二极管位。多个离子注入区域中的每一个表示第一二进制值的数据位，平坦二极管的剩余未注入区域表示剩余二进制值的数据位。通过响应于依次入射到平面二极管中的这种位置的阵列的每个可能的数据位位置上的扫描电子束的复合现象，引起永久存储的数据被读取。公开了将离子注入位置写入平面二极管介质的宽带宽方法。

10. 发明授权

US4038606A Semiconductor device for storing and non-destructively reading image information and memory system comprising such a device 失效
标题翻译：用于存储和非解密读取图像信息的半导体器件和包含该器件的存储器系统
公开(公告)号：US4038606A
公开(公告)日：1977-07-26
申请号：US749742
申请日：1976-12-13
申请人： Arthur Marie Eugene Hoeberechts , Marino Giuseppe Carasso
发明人： Arthur Marie Eugene Hoeberechts , Marino Giuseppe Carasso
IPC分类号： G11C11/23 , H01J29/39 , H01L27/00 , G11C11/34
CPC分类号： H01J29/39 , G11C11/23 , H01L27/00
摘要： A semiconductor device, in particular a target for use in a memory tube having an optical and electric input and an electric output, having a semiconductor plate of the silicon vidicon type, in which information in the form of charge is stored in an insulating layer present on the diodes and is read non-destructively by scanning a reading grating present on the insulating layer between the diodes by means of an electron beam.

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