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1. 发明授权

US07049158B2 Method of manufacturing an emitter 有权
标题翻译：制造发射体的方法
公开(公告)号：US07049158B2
公开(公告)日：2006-05-23
申请号：US10688731
申请日：2003-10-15
申请人： Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
发明人： Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
IPC分类号： H01L21/00
CPC分类号： B82Y10/00 , G11C11/23 , H01J1/312 , H01J9/025
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译：公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。然后在保护层上形成电子透镜结构。最后，蚀刻保护层以暴露平坦的阴极发射表面。

2. 发明授权

US06741016B2 Focusing lens for electron emitter with shield layer 有权
标题翻译：用于具有屏蔽层的电子发射器的聚焦透镜
公开(公告)号：US06741016B2
公开(公告)日：2004-05-25
申请号：US09882933
申请日：2001-06-14
申请人： Paul J. Benning , William R Knight , Michael J. Regan
发明人： Paul J. Benning , William R Knight , Michael J. Regan
IPC分类号： H01J146
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1418 , G11C11/23 , H01J3/022
摘要： An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.
摘要翻译：电子透镜用于将电子从阴极聚焦到阳极。透镜包括第一导电层，其具有距离阴极第一距离的第一开口。第一导电层保持在第一电压。透镜还包括第二导电层，其具有距离第一导电层第二距离的第二开口和离阳极的第三距离。第二导电层被保持在基本上等于阳极电压的第二电压上。基于第一电压，第二电压，第一距离，第二距离和第三距离来选择第一和第二开口。开口将从阴极发射的电子聚焦到阳极上至优选小于40纳米的光斑尺寸。通过透镜的结构，在阴极和阳极之间产生的力最小化。

3. 发明申请

US20030143788A1 METHOD OF MANUFACTURING AN EMITTER 失效
标题翻译：制造发电机的方法
公开(公告)号：US20030143788A1
公开(公告)日：2003-07-31
申请号：US10066149
申请日：2002-01-31
发明人： Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
IPC分类号： H01L021/338
CPC分类号： B82Y10/00 , G11C11/23 , H01J1/312 , H01J9/025
摘要： An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
摘要翻译：发射极包括电子源和设置在电子源上的隧穿层。阴极层设置在隧道层上。导电电极具有多层导电材料。多层包括设置在阴极层上的保护层。已经蚀刻导电电极以限定开口，从而暴露阴极层的一部分。

4. 发明授权

US06304481B1 Method and apparatus for storing data using spin-polarized electrons 有权
标题翻译：使用自旋极化电子存储数据的方法和装置
公开(公告)号：US06304481B1
公开(公告)日：2001-10-16
申请号：US09612221
申请日：2000-07-07
申请人： Thomas D. Hurt
发明人： Thomas D. Hurt
IPC分类号： G11C1300
CPC分类号： G11B23/281 , G11B5/00 , G11B5/64 , G11B5/65 , G11B5/653 , G11B5/656 , G11B9/10 , G11B11/11 , G11B11/115 , G11B13/045 , G11B19/04 , G11B20/1883 , G11C11/02 , G11C11/23 , H01J3/02 , H01J2203/0296
摘要： A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength “characteristic” of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
摘要翻译：一种数据存储装置，包括基板，基板上的数据存储层和自旋极化电子源。数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。在数据存储层中创建数据磁场。数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。通过提供具有电子磁场的自旋极化电子，数据存储在数据存储层中，该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向，电子具有不成对电子的波长“特性” 数据存储层，其引起材料的磁矩，并将自旋极化电子引导到数据磁场，以将电子磁场的极化方向赋予数据磁场。通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

5. 发明授权

US5576699A Method and apparatus for transferring information by utilizing electron beam 失效
标题翻译：利用电子束传送信息的方法和装置
公开(公告)号：US5576699A
公开(公告)日：1996-11-19
申请号：US449834
申请日：1995-05-24
申请人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
发明人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
IPC分类号： G11C7/00 , G11C11/23 , H03K19/14 , H04Q1/00
CPC分类号： H03K19/14 , G11C11/23 , G11C7/005
摘要： In a method for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. A deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, logical multiplications, image formation, and the like.
摘要翻译：在以电子束形式传送信息的方法中，电子束检测器检测电子束，并且在检测到电子束时根据来自检测器的信号来控制来自预定电子束源的电子束的发射。偏转电极也用于根据电场或磁场偏转电子束，以执行电荷转移，逻辑加法，逻辑乘法，图像形成等。

6. 发明授权

US4123798A High density beam-accessed memory with reference target 失效
标题翻译：具有参考目标的高密度光束存取存储器
公开(公告)号：US4123798A
公开(公告)日：1978-10-31
申请号：US857314
申请日：1977-12-05
申请人： Francis J. Cook , Frederick E. Kline
发明人： Francis J. Cook , Frederick E. Kline
IPC分类号： G11C11/23 , G11C8/00
CPC分类号： G11C11/23
摘要： This invention relates to apparatus and methods for providing a high-density memory for electrical data and more particularly, to such a memory wherein data are represented by patterns of charge written and read by electron beam means at addressed locations.
摘要翻译：本发明涉及用于提供用于电数据的高密度存储器的装置和方法，更具体地说，涉及这样一种存储器，其中数据由在寻址位置处由电子束装置写入和读取的电荷模式表示。

7. 再颁专利

USRE28773E Charge image storage method and apparatus 失效
标题翻译：充电图像存储方法和装置
公开(公告)号：USRE28773E
公开(公告)日：1976-04-13
申请号：US349210
申请日：1973-04-09
申请人： Charles B. Gibson, Jr.
发明人： Charles B. Gibson, Jr.
IPC分类号： G11C11/23 , H01J31/12 , H01J31/60
CPC分类号： G11C11/23 , H01J31/122 , H01J31/60
摘要： The information stored on the dielectric target of a bistable storage tube is read out nondestructively employing a pulsed electron beam. The electron beam is turned on for a period having a duration less than necessary to change a given area of the target from one stable stored potential to another, while the period between pulsations is long enough so the tube's flood beam can return a given area to its original stored potential.

8. 发明授权

US3950669A Erasing method for storage tube employing raster scan 失效
标题翻译：使用RASTER扫描的存储管的擦除方法
公开(公告)号：US3950669A
公开(公告)日：1976-04-13
申请号：US463604
申请日：1974-04-24
申请人： Edgar Merle Smith
发明人： Edgar Merle Smith
IPC分类号： G11C11/23 , H01J31/60 , H01J29/41
CPC分类号： H01J31/60 , G11C11/23
摘要： The time duration of an erasing cycle is shortened and "raster burn" is reduced by first applying potentials which result in a substantially uniform charge over the storage surface by means of secondary electron redistribution. This causes the storage target surface to assume a substantially uniform "white" level. Thereafter, the charge on the storage target surface is reduced to a substantially uniform "black" level.

9. 发明授权

US3761895A Method and apparatus for storing and reading out charge in an insulating layer 失效
标题翻译：用于在绝缘层中存储和读取电荷的方法和装置
公开(公告)号：US3761895A
公开(公告)日：1973-09-25
申请号：US3761895D
申请日：1971-03-17
申请人： GEN ELECTRIC
发明人： ELLIS G , POSSIN G , WILSON R
IPC分类号： G11C11/23 , H01J29/39 , H01J31/60 , H01L29/00 , G11C5/02 , G11C11/34 , G11C13/04
CPC分类号： H01J31/60 , G11C11/23 , H01J29/39 , H01L29/00
摘要： An electron beam addressable memory is disclosed in which information is stored as an electric charge in a multilayered memory target. The multilayered memory comprises a conductive layer, an insulating layer having a plurality of charge storage sites, a layer of n-type and a layer of p-type semiconductor material having a p-n junction therebetween. The method of writing causes charge to be stored at selected sites in the insulating layer. The method of reading causes the current through the p-n junction, which is reverse biased, to vary in magnitude depending upon whether or not the beam impinges on a charged site. The read and write electron beams are preferably of the same energy and a different voltage is applied to the conductive layer during reading than is applied during writing. In another embodiment, the conducting layer is omitted and the effect of different voltages applied to the conducting layer is produced by secondary emission from the insulating layer.
摘要翻译：公开了一种电子束可寻址存储器，其中信息作为电荷存储在多层存储器目标中。多层存储器包括导电层，具有多个电荷存储位置的绝缘层，n型层和p型半导体材料层之间具有p-n结。写入方法使电荷存储在绝缘层中的选定位置。读取方法导致通过反向偏置的p-n结的电流在取决于束是否照射在带电部位上的幅度上变化。读和写电子束优选地具有相同的能量，并且在读取期间在写入期间施加不同的电压到导电层。在另一个实施例中，省略导电层，并且通过来自绝缘层的二次发射产生施加到导电层的不同电压的效果。

10. 发明授权

US3751688A Erasing circuit for use in a display tube provided with a storage screen 失效
标题翻译：用于存储屏幕的显示管中使用的擦除电路
公开(公告)号：US3751688A
公开(公告)日：1973-08-07
申请号：US3751688D
申请日：1971-12-23
申请人： PHILIPS CORP
发明人： HOOGHORDEL R
IPC分类号： G01R13/22 , G09G1/26 , G11C11/23 , H03K17/60 , H03K17/00 , H01J29/41
CPC分类号： H03K17/60 , G01R13/225 , G09G1/26 , G11C11/23
摘要： the entire peak-topeak voltage range, by capacitive coupling, the amplifier element being switched off, being saturated or retaining a constant voltage and hence being protected against excessive voltages. It should be borne in mind that the positive-going and the negative-going sudden voltage variations must be associated with a given RC time constant to enable adequate erasure. The time constants are to be determined for both polarities having regard to the protecting means, the adjusting resistors and the one fixed capacitor.
To erase the information on a storage screen of a display tube there must be applied to the tube sudden potential variations which may have values of several hundreds of volts. By using a low-voltage transistor in emitter-follower connection in conjunction with transistor protective means and an appropriate RC time determination both the normal bias voltage and the sudden high-voltage potential variations may be applied to the tube. This erasing circuit may be used in storage oscilloscopes. The invention relates to an erasing circuit for use in a display tube provided with a storage screen, which circuit comprises a direct-voltage supply source connected between the storage screen and the cathode circuit for storing information on the screen and a first capacitor one electrode of which is connected to a square-wave voltage supply source, the co-operation of the capacitor and of resistors producing an erasing voltage which is the differential of the square-wave voltage and is superposed on the voltage from the direct-voltage supply source and which erases the information on the screen. It is known to use cathode ray tubes to display electric information. By deflecting an electron beam emitted from a cathode charges may locally be stored on a display screen or the screen may be caused to emit light. In general, in oscilloscope and television technology display tubes are used which have a display screen which emits light only when the electron beam strikes the screen, and in some cases a screen exhibiting afterglow is used. However, if the oscillogram or the information is to be stored for a prolonged period of time and hence the screen must exhibit after-flow for a very long period, a given type of storage screen may be used in conjunction with a special tube construction. A tube of such type may be provided with a writing gun, i.e., a system which provides the controllable writing beam, at least one holding gun capable of emitting a uniform stream of electrons to the entire screen, and a special screen comprising a glass plate which is coated with a thin conductive layer which in turn is coated with a dielectric layer of, for example, a phosphor. Depending upon the energy which the electrons have when striking the phosphor layer the secondary emission factor of the layer is smaller or greater than unity. This energy depends not only on the voltage between the cathodes and the conductive layer but also, owing to the insulating properties of the dielectric layer, on the charge present on the layer. If the emission factor is less than unity, a negative charge is collected on the screen which is supplied from the continuously spraying holding guns, and the layer assumes cathode potential. The screen is dark, no light is emitted and hence information may be written in. For this purpose the writing gun provides a beam of high-energy electrons, for its cathode is at a high negative potential of several thousands of volts relative to the screen. At the points of impact on the screen the emission factor is greater than unity, so that a positive charge builds up. At these points the phosphor emits light, so that the oscillogram or the information becomes visible. The positive charGe attracts stray electrons which are given an energy such that the emission factor still remains greater than unity, so that after the collapse of the writing beam the information remains visible. Thus, a store in produced. To clear this store the local charge differences must be equalized or the charges must be discharged. It is known to use an erasing circuit for this purpose. One of the effects of the known erasing circuit is that the correct bias voltage between the spraying cathode and the conductive layer on the screen is adjusted and maintained. For this purpose a tube circuit is used which represents a direct voltage supply having a low internal resistance and is generally referred to as cathode follower. The anode of the tube used is connected to a supply source of a voltage of about 500 Volts, its grid is connected through a resistor to a voltage divider having a range between 150 V and 250 V, and its cathode is connected through a resistor to the common lead to which the spraying cathode also is connected and on the other hand to the conductive layer on the screen. To enable the image on the screen to be erased the screen must be brought to a high positive potential for a given time so that the emission factor for the entire dielectric layer becomes greater than unity and hence the entire layer is given a positive charge and the entire screen emits light: equalization of the charge, after which this charge is removed, and a negative charge is applied to the layer in that the conductive layer is temporarily brought to a low potential or to zero potential relative to the spraying cathode. The sudden positive- and negative-going voltage variations which may be superimposed on the bias voltage must be of sufficient duration to equalize the entire screen in respect of charges. For present-day storage tubes this time must be of the order of from 50 to 150 milliseconds. The known circuit uses sudden voltage variations which decrease exponentially and are obtainable by differentiating a square-wave voltage via a capacitance-resistance network. For this purpose one electrode of a capacitor is connected to the grid of the tube and the other electrode is connected to a change-over switch which has a rest position, in which it establishes a connection to the common line, and an operative position, in which it etablishes a connection to a potential of, say, +250 V. The combination of the various resistors included in the grid circuit and the capacitor produces an RC time of a duration sufficient for the erasing process. By changing over the switch to the operative position a sudden voltage variation of + 250 V is produced at the grid and hence at the cathode and at the screen. This voltage exponentially decreases to the initial screen bias voltage. By returning the switch to the rest position a negative-going voltage variation is produced. Because of the tendency to reduce the size, the weight and the power dissipation of apparatus semiconductor elements will be employed at all points where their use is possible. Furthermore endeavors should be made to reduce the cost of the apparatus. A disadvantage of the known erasing circuit consists in the use of a tube, which is comparatively bulky, and together with its high voltage and filament-current supply devices is heavy and dissipates a considerable amount of power. Substituting a transistor for the tube does not remove all these disadvantages: it still requires a high-voltage supply and the cost of such a high-voltage transistor is considerable. The erasing circuit according to the invention obviates all these difficulties. Only one cheap low-voltage transistor is required, and the supply voltage may be halved, for example from 500 V to 250 V. For this purpose an erasing circuit according to the invention is characterized in that the direct-volTage supply source includes an emitter follower circuit the emitter circuit of which is connected between the storage screen and the cathode circuit and which includes at least one transistor the maximum permissible collector-emitter voltage of which is smaller than the sum of the direct voltage and the peak value of the erasing voltage. Means are provided to protect the emitter follower circuit against excessive voltages, while the point of the circuit to which the other electrode of the first capacitor is connected is chosen so that the resistors together with the capacitor and in conjunction with the said means provide the appropriate time constants. The various embodiments of the invention are based on the recognition that sudden voltage variations are obtainable by superposition on the bias direct voltage, without an amplifier element being required to be driven through
摘要翻译：为了擦除显示管的存储屏幕上的信息，必须应用可能具有几百伏特值的管突然电位变化。通过使用发射极跟随器连接中的低电压晶体管与晶体管保护装置和适当的RC时间确定，可以向管施加正常偏置电压和突然的高电压电位变化。

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