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81. 发明授权

US07368774B2 Capacitor and its manufacturing method, ferroelectric memory device, actuator, and liquid jetting head 有权
标题翻译：电容器及其制造方法，铁电存储器件，致动器和液体喷射头
公开(公告)号：US07368774B2
公开(公告)日：2008-05-06
申请号：US11531424
申请日：2006-09-13
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01L27/108 , H01L29/76 , H01L21/8242
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/56 , H01L28/65 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.
摘要翻译：电容器包括下电极，由下电极形成的锆钛酸铅铌酸铅构成的第一电介质膜，由锆钛酸铅或锆钛酸铅钛酸铌构成的第二电介质膜，Nb组成小于锆酸铅构成第一电介质膜的钛酸铌酸酯和形成在第二电介质膜上方的上电极。

82. 发明申请

US20070212876A1 METHOD FOR MANUFACTURING WIRING SUBSTRATE 有权
标题翻译：制造接线基板的方法
公开(公告)号：US20070212876A1
公开(公告)日：2007-09-13
申请号：US11680801
申请日：2007-03-01
申请人： Satoshi KIMURA , Hidemichi FURIHATA , Takeshi KIJIMA
发明人： Satoshi KIMURA , Hidemichi FURIHATA , Takeshi KIJIMA
IPC分类号： H01L21/4763
CPC分类号： H05K3/184 , C23C18/1608 , C23C18/1651 , C23C18/1692 , C23C18/1879 , C23C18/30 , C23C18/31 , C23C18/36 , H05K2203/0565 , H05K2203/1476 , Y10S438/903 , Y10S438/906
摘要： A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dipping the substrate in an electroless plating solution to thereby precipitate metal on the catalyst layer to provide a first metal layer; (c) washing a top surface of the substrate with water; and (d) dipping the substrate in an electroless plating solution to thereby precipitate metal on the first metal layer to provide a second metal layer.
摘要翻译：提供一种通过化学镀方法制造布线基板的方法，该方法使不使用电镀抗蚀剂的金属沉淀。该方法包括以下步骤：（a）在衬底上提供具有预定图案的催化剂层; （b）将基板浸渍在化学镀溶液中，从而使金属沉淀在催化剂层上以提供第一金属层; （c）用水洗涤基材的顶表面; 和（d）将基板浸入化学镀溶液中，从而在第一金属层上沉淀金属，以提供第二金属层。

83. 发明授权

US07215567B2 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US07215567B2
公开(公告)日：2007-05-08
申请号：US11216078
申请日：2005-09-01
申请人： Masami Hashimoto , Takeshi Kijima , Junichi Karasawa , Mayumi Ueno
发明人： Masami Hashimoto , Takeshi Kijima , Junichi Karasawa , Mayumi Ueno
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life.The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.
摘要翻译：提供能够实现高速，高集成度，长使用寿命的非破坏性读取型铁电存储器。本发明具有在栅极部分具有铁电薄膜的MFSFET100，字线104，位线105和位线106，以施加等于或高于铁电薄膜的矫顽电场的电压在第一写入定时在位线105和字线104之间施加等于或高于位线106和字线104之间的矫顽电场的电压，并施加等于或小于在第一读取定时，在位线105和字线104之间的铁电薄膜的矫顽电场，以检测在两个位线之间流动的电流，并施加等于或低于位线106之间的矫顽电场的电压和第二读取定时的字线104，以检测在两个位线之间流动的电流。

84. 发明授权

US07142445B2 Ferroelectric memory device, method of driving the same, and driver circuit 失效
标题翻译：铁电存储器件，其驱动方法和驱动电路
公开(公告)号：US07142445B2
公开(公告)日：2006-11-28
申请号：US10932890
申请日：2004-09-02
申请人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22 , G11C5/06 , G11C5/14 , G11C7/00 , G11C8/00
CPC分类号： G11C11/22
摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.
摘要翻译：一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式选自铁电存储单元的至少一个铁电存储单元。字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

85. 发明授权

US07077911B2 MOCVD apparatus and MOCVD method 有权
标题翻译： MOCVD装置和MOCVD方法
公开(公告)号：US07077911B2
公开(公告)日：2006-07-18
申请号：US10376276
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/455
摘要： The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.
摘要翻译：本发明提供一种MOCVD装置和MOCVD方法，其可以通过减少或防止源气体的温度降低来沉积具有令人满意的性能的薄膜。根据本发明的MOCVD装置将作为MO源气体的混合物的源气体与氧化气体一起提供给基板，从而形成膜。 MOCVD装置包括用于保持基板的基板支架; 沉积室，用于容纳衬底保持器; 供应机构，用于将源气体供应到衬底的表面; 以及加热装置，用于加热由基板保持器保持的基板。沉积室包括用于容纳保持基板的基板保持器的基板容纳单元，以及连接到基板容纳单元并构成将源气体供应到基板的通道的通道容纳单元。当通道容纳单元与基板的沉积平面平行地切割时，通道的横截面面积小于基板的沉积平面的面积。

86. 发明授权

US07074624B2 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory 失效
标题翻译：铁电体膜，铁电体膜的制造方法，铁电体电容器，铁电体电容器的制造方法以及铁电体存储器
公开(公告)号：US07074624B2
公开(公告)日：2006-07-11
申请号：US10808417
申请日：2004-03-25
申请人： Koji Ohashi , Takeshi Kijima , Junichi Karasawa , Yasuaki Hamada , Eiji Natori
发明人： Koji Ohashi , Takeshi Kijima , Junichi Karasawa , Yasuaki Hamada , Eiji Natori
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02282 , H01L21/28273 , H01L21/31691 , H01L27/11507 , H01L28/55
摘要： A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.
摘要翻译：制造铁电体膜的方法包括使具有复合氧化物的原料结晶，该方法包括：在施加预定压力和预定温度的第一条件下进行热处理; 并且在第一状态下的热处理之后，保持其中施加压力和低于第一状态的温度的温度的第二条件，并且通过在第一状态下重复进行热处理使原料结晶条件和维持第二个条件。

87. 发明授权

US07074548B2 Apparatus and method for forming thin-film 有权
标题翻译：用于形成薄膜的设备和方法
公开(公告)号：US07074548B2
公开(公告)日：2006-07-11
申请号：US10376253
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： B05D3/00 , B05D3/06
CPC分类号： C23C18/1216 , B01J3/008 , B01J19/0013 , B01J19/123 , B01J19/125 , B01J19/1887 , B01J2219/00058 , B05D1/025 , B05D2401/90 , C23C18/12 , C23C18/1283 , C23C18/1287 , C23C18/14 , Y02P20/544
摘要： A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.
摘要翻译：一种形成薄膜的方法，该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。该方法包括允许衬底保持器支撑减法。通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。通过将第二混合物施加到基板的表面上来形成薄膜。在形成薄膜之后，通过将酒精施加到底部的上表面和下表面，优选整个上表面和下表面来清洁基底。薄膜通过加热结晶，结晶可以包括在结晶室中施加氧气。在衬底表面形成薄膜期间，可以将软X射线施加到衬底上。

88. 发明授权

US07031180B2 Method of reading data in ferroelectric memory device and ferroelectric memory device 失效
标题翻译：在铁电存储器件和铁电存储器件中读取数据的方法
公开(公告)号：US07031180B2
公开(公告)日：2006-04-18
申请号：US10807355
申请日：2004-03-24
申请人： Junichi Karasawa , Takeshi Kijima , Eiji Natori
发明人： Junichi Karasawa , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference ΔV occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.
摘要翻译：一种在铁电存储器件中读取数据的方法包括：向铁电电容器施加读取电压，并且检测反映施加了读取电压的铁电电容器的电容的动态变化量的电压。由于在存储了第一数据的存储单元的极化不反转的情况下，在存储第二数据的存储单元的极化反转的情况下，在时刻T发生电压差DeltaV，读取余量增加。

89. 发明申请

US20050253903A1 Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator and electronic apparatus 有权
标题翻译：压电元件，压电致动器，喷墨记录头，喷墨打印机，表面声波元件，频率滤波器，振荡器，电子电路，薄膜压电谐振器和电子设备
公开(公告)号：US20050253903A1
公开(公告)日：2005-11-17
申请号：US11130342
申请日：2005-05-16
申请人： Hiromu Miyazawa , Motohisa Noguchi , Takeshi Kijima
发明人： Hiromu Miyazawa , Motohisa Noguchi , Takeshi Kijima
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/145 , B41J2/16 , C04B35/49 , C04B35/491 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H01L41/39 , H02N2/00 , H03B5/30 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17
CPC分类号： H01L41/1875 , B41J2/14233 , H01L41/0815 , H01L41/1876 , H01L41/318 , H03H3/02 , H03H3/08 , H03H9/02031 , H03H9/02574 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译：压电元件包括基底基板，形成在基底基板上的缓冲层，以及形成在缓冲层之上的压电膜，其中缓冲层由Pb（（Zr 1-x Ti）其中x在0的范围内的钙钛矿型，其中x在0的范围内 <= x <= 1，y在0.05 <= y <0.3的范围内，并且压电膜由钙钛矿型的弛豫材料形成。

90. 发明申请

US20050236652A1 MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device 失效
标题翻译： MFS型场效应晶体管，其制造方法，铁电存储器和半导体器件
公开(公告)号：US20050236652A1
公开(公告)日：2005-10-27
申请号：US11108933
申请日：2005-04-19
申请人： Takeshi Kijima , Yasuaki Hamada
发明人： Takeshi Kijima , Yasuaki Hamada
IPC分类号： H01L41/09 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L29/49 , H01L29/51 , H01L29/745 , H01L29/76 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L41/187 , H01L41/318 , H01L41/39
CPC分类号： H01L21/28291 , H01L21/28167 , H01L29/495 , H01L29/516 , H01L29/78391
摘要： A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.
摘要翻译： MFS型场效应晶体管包括半导体层，形成在半导体层上的PZT系铁电层，形成在PZT系铁电层上的栅电极和构成源极或漏极的杂质层，形成在半导体层中。 PZT系铁电体层包含将Ti成分替换为2.5摩尔％以上且40摩尔％以下的Nb。

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