专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070178678A1 Methods of implanting ions and ion sources used for same 审中-公开
标题翻译：植入离子和离子源的方法
公开(公告)号：US20070178678A1
公开(公告)日：2007-08-02
申请号：US11342183
申请日：2006-01-28
申请人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
发明人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
IPC分类号： H01L21/26
CPC分类号： H01J37/08 , C23C14/48 , H01J27/02 , H01J37/3171
摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
摘要翻译：提供了用于其的离子注入和离子源的方法。该方法涉及从包含多个元素的源馈送气体产生离子。例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热阴极（IHC），伯纳斯）在使用过程中产生这种温度。

2. 发明申请

US20050205807A1 In-situ monitoring on an ion implanter 有权
标题翻译：离子注入机的原位监测
公开(公告)号：US20050205807A1
公开(公告)日：2005-09-22
申请号：US10803439
申请日：2004-03-18
申请人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
发明人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
IPC分类号： G01N15/06 , G01N21/47 , G01N21/84 , G01N21/94 , G01N21/95 , H01J37/317 , H01L21/66 , H01J37/304
CPC分类号： G01N21/94 , G01N21/47 , G01N21/9501 , G01N2015/0693 , G01N2021/4702 , G01N2021/8416 , G01N2201/06113 , H01J2237/0225 , H01J2237/31701
摘要： The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
摘要翻译：本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测，以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。一个或多个这样的系统被揭示用于检测由光源（例如激光束）照射的一个或多个半导体晶片上的颗粒的散射光。该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器（例如，PMT或光电二极管）的离子注入机。晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。计算机分析从照射的晶片（工件）检测到的散射光的强度，并且还可以将检测到的光映射到唯一的位置。例如，在额外的时间和资源被消耗之前，可以在植入过程期间在晶片上识别颗粒或其它这样的污染物，并且有助于确定这些污染物的来源。此外，例如，这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。

3. 发明申请

US20120256097A1 INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN 有权
标题翻译：独立加热阴极盒设计
公开(公告)号：US20120256097A1
公开(公告)日：2012-10-11
申请号：US13082495
申请日：2011-04-08
申请人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
发明人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
IPC分类号： H01J1/50 , H01J9/02
CPC分类号： H01J37/067 , H01J19/14 , H01J19/20 , H01J29/485 , H01J37/026 , H01J37/075 , H01J37/3171 , H01J2237/06308 , H01J2237/06375
摘要： An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
摘要翻译：公开了一种用于在等离子体喷枪中产生电子的装置和方法。该装置包括一个间接加热的阴极（IHC），其被包含在一个预制的盒中。这种墨盒可以在等离子喷枪中轻松更换。此外，IHC的使用减少了注入工件或晶片的污染物的量。

4. 发明授权

US07999479B2 Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control 有权
标题翻译：用于宽带离子束产生和控制的共轭ICP和ECR等离子体源
公开(公告)号：US07999479B2
公开(公告)日：2011-08-16
申请号：US12424964
申请日：2009-04-16
申请人： Costel Biloiu , Jay Scheuer , Alexander Perel
发明人： Costel Biloiu , Jay Scheuer , Alexander Perel
IPC分类号： H01J7/24 , H05H1/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H01L31/0288 , H01L31/1804 , H01L31/206 , Y02P70/521
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。除了等离子体源之外，离子源还包括扩散室。扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

5. 发明申请

US20100264328A1 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL 有权
标题翻译：连接ICP和ECR等离子体源用于大量离子束生成和控制
公开(公告)号：US20100264328A1
公开(公告)日：2010-10-21
申请号：US12424964
申请日：2009-04-16
申请人： Costel Biloiu , Jay Scheuer , Alexander Perel
发明人： Costel Biloiu , Jay Scheuer , Alexander Perel
IPC分类号： H01J27/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H01L31/0288 , H01L31/1804 , H01L31/206 , Y02P70/521
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。除了等离子体源之外，离子源还包括扩散室。扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

6. 发明申请

US20100055345A1 HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 有权
标题翻译：高密度HELICON等离子体源用于宽度的RIBBON离子束生成
公开(公告)号：US20100055345A1
公开(公告)日：2010-03-04
申请号：US12200189
申请日：2008-08-28
申请人： Costel Biloiu , Alexander Perel , Jay Scheuer
发明人： Costel Biloiu , Alexander Perel , Jay Scheuer
IPC分类号： H05H1/24 , C23C16/503
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。除了螺旋型等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

7. 发明授权

US08142607B2 High density helicon plasma source for wide ribbon ion beam generation 有权
标题翻译：用于宽带离子束产生的高密度螺旋等离子体源
公开(公告)号：US08142607B2
公开(公告)日：2012-03-27
申请号：US12200189
申请日：2008-08-28
申请人： Costel Biloiu , Alexander Perel , Jay Scheuer
发明人： Costel Biloiu , Alexander Perel , Jay Scheuer
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。除了螺旋型等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

8. 发明申请

US20070195482A1 Johnsen-Rahbek electrostatic chuck driven with AC voltage 审中-公开
标题翻译： Johnsen-Rahbek静电卡盘用AC电压驱动
公开(公告)号：US20070195482A1
公开(公告)日：2007-08-23
申请号：US11395744
申请日：2006-03-31
申请人： Richard Muka , Alexander Perel , Paul Murphy
发明人： Richard Muka , Alexander Perel , Paul Murphy
IPC分类号： H01T23/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck includes dielectric layer having at least one region, an electrode associated with the at least one region, and an AC power source configured to provide an AC voltage signal to the electrode. The dielectric property of the dielectric layer is configured to permit a charge migration about the dielectric layer to produce an electrostatic force to attract a workpiece to the dielectric layer when the AC voltage signal is applied to the electrode.
摘要翻译：静电卡盘包括具有至少一个区域的电介质层，与该至少一个区域相关联的电极以及被配置为向该电极提供AC电压信号的AC电源。电介质层的介电特性被配置成当AC电压信号被施加到电极时允许围绕电介质层的电荷迁移产生静电力以将工件吸引到电介质层。

9. 发明申请

US20060169915A1 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US20060169915A1
公开(公告)日：2006-08-03
申请号：US11269033
申请日：2005-11-08
申请人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
发明人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
IPC分类号： H01L21/336 , H01J27/00
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

10. 发明授权

US09076625B2 Indirectly heated cathode cartridge design 有权
标题翻译：间接加热阴极筒设计
公开(公告)号：US09076625B2
公开(公告)日：2015-07-07
申请号：US13082495
申请日：2011-04-08
申请人： Craig Chaney , Leo Klos , Anthony Renau , Alexander Perel
发明人： Craig Chaney , Leo Klos , Anthony Renau , Alexander Perel
IPC分类号： H01J9/02 , H01J37/067 , H01J19/20 , H01J29/48 , H01J19/14 , H01J37/02 , H01J37/075 , H01J37/317
CPC分类号： H01J37/067 , H01J19/14 , H01J19/20 , H01J29/485 , H01J37/026 , H01J37/075 , H01J37/3171 , H01J2237/06308 , H01J2237/06375
摘要： An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
摘要翻译：公开了一种用于在等离子体喷枪中产生电子的装置和方法。该装置包括一个间接加热的阴极（IHC），其被包含在一个预制的盒中。这种墨盒可以在等离子喷枪中轻松更换。此外，IHC的使用减少了注入工件或晶片的污染物的量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式