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1. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

2. 发明申请

US20130045339A1 TECHNIQUES FOR DIAMOND NUCLEATION CONTROL FOR THIN FILM PROCESSING 审中-公开
公开(公告)号：US20130045339A1
公开(公告)日：2013-02-21
申请号：US13210122
申请日：2011-08-15
申请人： Ludovic Godet , Xianfeng Lu , Anthony Renau
发明人： Ludovic Godet , Xianfeng Lu , Anthony Renau
IPC分类号： H05H1/24 , C23C16/50 , B05C11/00
CPC分类号： C23C14/0611 , C23C14/042 , C23C14/221 , C23C14/54
摘要： Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma.

3. 发明申请

US20120248328A1 APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION 有权
标题翻译：多种植入物的装置和方法
公开(公告)号：US20120248328A1
公开(公告)日：2012-10-04
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H01J3/14 , G21G5/00
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

4. 发明申请

US20120175518A1 TECHNIQUE AND APPARATUS FOR MONITORING ION MASS, ENERGY, AND ANGLE IN PROCESSING SYSTEMS 有权
标题翻译：用于监控处理系统中离子质量，能量和角度的技术和装置
公开(公告)号：US20120175518A1
公开(公告)日：2012-07-12
申请号：US12987950
申请日：2011-01-10
申请人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
发明人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
IPC分类号： H01J49/00
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译：用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变到基板的平面。漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

5. 发明授权

US07642150B2 Techniques for forming shallow junctions 有权
标题翻译：形成浅结的技术
公开(公告)号：US07642150B2
公开(公告)日：2010-01-05
申请号：US11733467
申请日：2007-04-10
申请人： Edwin A. Arevalo , Christopher R. Hatem , Anthony Renau , Jonathan Gerald England
发明人： Edwin A. Arevalo , Christopher R. Hatem , Anthony Renau , Jonathan Gerald England
IPC分类号： H01L21/425 , G21K5/10
CPC分类号： H01L21/26506 , H01J2237/2001 , H01J2237/31701 , H01L21/26513 , H01L21/2658 , H01L21/26593
摘要： Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.
摘要翻译：公开了形成浅结的技术。在一个特定的示例性实施例中，可以将技术实现为用于形成浅结的方法。该方法可以包括基于选自以下的一种或多种材料生成包括分子离子的离子束：二氧化锗（Ge2H6），氮化锗（Ge3N4），锗 - 氟化合物（GFn，其中n = 1,2或 3）和其他含锗化合物。该方法还可以包括使离子束撞击半导体晶片。

6. 发明申请

US20090317937A1 Maskless Doping Technique for Solar Cells 审中-公开
标题翻译：太阳能电池无掩模掺杂技术
公开(公告)号：US20090317937A1
公开(公告)日：2009-12-24
申请号：US12200117
申请日：2008-08-28
申请人： Atul Gupta , Nicholas Bateman , Paul Murphy , Anthony Renau , Charles Carlson
发明人： Atul Gupta , Nicholas Bateman , Paul Murphy , Anthony Renau , Charles Carlson
IPC分类号： H01L21/00
CPC分类号： H01J37/3172 , H01J2237/31701 , H01L21/265 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.
摘要翻译：公开了一种利用选择性发射极设计制造太阳能电池的成本较低的方法。在不使用光刻或掩模的情况下，在基板上形成接触区域。该方法利用离子注入技术，并且接触区域的相对低的精度要求减少了生产太阳能电池所需的工艺步骤。在一些实施例中，选择性地修改离子束的电流以产生高度掺杂的接触区域。在其他实施例中，离子束通过使用孔径或通过调整到束线分量来聚焦以产生必要的掺杂分布。在其他实施例中，晶片扫描速率被修改以产生期望的离子注入图案。

7. 发明授权

US07459692B2 Electron confinement inside magnet of ion implanter 有权
标题翻译：离子注入机磁体内的电子约束
公开(公告)号：US07459692B2
公开(公告)日：2008-12-02
申请号：US11272193
申请日：2005-11-10
申请人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
发明人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/1475 , H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/055
摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
摘要翻译：公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

8. 发明申请

US20080078953A1 TECHNIQUE FOR IMPROVING ION IMPLANTATION THROUGHPUT AND DOSE UNIFORMITY 有权
标题翻译：用于改善离子植入和剂量均匀性的技术
公开(公告)号：US20080078953A1
公开(公告)日：2008-04-03
申请号：US11537050
申请日：2006-09-29
申请人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
发明人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

9. 发明申请

US20080075880A1 Non-doping implantation process utilizing a plasma ion implantation system 审中-公开
标题翻译：利用等离子体离子注入系统的非掺杂注入工艺
公开(公告)号：US20080075880A1
公开(公告)日：2008-03-27
申请号：US11527158
申请日：2006-09-26
申请人： Anthony Renau , Vikram Singh
发明人： Anthony Renau , Vikram Singh
IPC分类号： C23C14/00
CPC分类号： H01L21/2236 , H01L21/265
摘要： Non-doping implantation process utilizing a plasma ion implantation system. A plasma ion implantation system is used to perform a non-doping implantation process such as a pre-amorphization implantation process or a strain altering implantation. Use of the plasma ion implantation system to perform a non-doping implantation process results in higher throughput and is conducive to sequential ion implantation processing.
摘要翻译：利用等离子体离子注入系统的非掺杂注入工艺。等离子体离子注入系统用于执行非掺杂注入工艺，例如预非晶化注入工艺或应变改变注入。使用等离子体离子注入系统执行非掺杂注入工艺导致更高的生产量并且有助于顺序离子注入处理。

10. 发明申请

US20070065576A1 Technique for atomic layer deposition 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070065576A1
公开(公告)日：2007-03-22
申请号：US11221710
申请日：2005-09-09
申请人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
发明人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/4554 , C23C16/45544
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。该装置可以包括具有用于保持至少一个基板的基板平台的处理室。该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种基质。该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种所述至少一种第一种类的原子层。

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