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1. 发明授权

US08263941B2 Mass analysis magnet for a ribbon beam 有权
标题翻译：质量分析用于带状束的磁体
公开(公告)号：US08263941B2
公开(公告)日：2012-09-11
申请号：US12616589
申请日：2009-11-11
申请人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
发明人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
IPC分类号： H01J49/20
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。螺线管线圈沿着带状束的行进方向间隔开。每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

2. 发明授权

US08129695B2 System and method for controlling deflection of a charged particle beam within a graded electrostatic lens 有权
标题翻译：用于控制渐变静电透镜内的带电粒子束的偏转的系统和方法
公开(公告)号：US08129695B2
公开(公告)日：2012-03-06
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
IPC分类号： G21K1/06
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

3. 发明申请

US20110240876A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 失效
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：US20110240876A1
公开(公告)日：2011-10-06
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/02
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

4. 发明申请

US20110155921A1 SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 有权
标题翻译：控制抛光静电镜中带电粒子束的偏移的系统和方法
公开(公告)号：US20110155921A1
公开(公告)日：2011-06-30
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
IPC分类号： G21K1/06 , H01J3/14
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

5. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

6. 发明申请

US20070262271A1 Ribbon beam ion implanter cluster tool 有权
标题翻译：丝带束离子注入机群集工具
公开(公告)号：US20070262271A1
公开(公告)日：2007-11-15
申请号：US11432977
申请日：2006-05-12
申请人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
发明人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译：提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个或更多的多个离子束线中的每一个的性质。负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

7. 发明授权

US07151658B2 High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer 有权
标题翻译：高性能静电夹具包括电阻层，微沟槽和电介质层
公开(公告)号：US07151658B2
公开(公告)日：2006-12-19
申请号：US10420329
申请日：2003-04-22
申请人： Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
发明人： Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.
摘要翻译：一种用于在加工过程中固定半导体晶片的静电夹。静电夹具包括：基座部件，第一电介质层，形成有气体压力分布微槽网络的第二电介质层，位于半导体晶片的背面和第二电介质层之间的气隙，以及一对位于第一介电层和第二介电层之间的高压电极。

8. 发明申请

US20050242293A1 Mounting mechanism for plasma extraction aperture 审中-公开
标题翻译：等离子体提取孔的安装机构
公开(公告)号：US20050242293A1
公开(公告)日：2005-11-03
申请号：US10395720
申请日：2003-01-07
申请人： Victor Benveniste
发明人： Victor Benveniste
IPC分类号： H01J37/08 , H01J3/14
CPC分类号： H01J37/08 , H01J2237/31701
摘要： An improved electrode subassembly for an ion implanter is provided. The subassembly comprises (i) a first generally planar electrode residing in a first plane and having a first aperture; (ii) a second generally planar electrode residing in a second plane generally parallel to the first plane and having a second aperture aligned with the first aperture; and (iii) a pair of connecting rods connecting the first generally planar electrode to the second generally planar electrode. The connecting rods permit generally parallel and slidable movement of the second generally planar electrode with respect to the first generally planar electrode. The connecting rods are positioned in a non-parallel relationship to each other, so that the first and second electrodes when undergoing thermal expansion slide with respect to each other upon the non-parallel connecting rods, to increase or decrease a distance therebetween, while maintaining a parallel relationship.
摘要翻译：提供了用于离子注入机的改进的电极子组件。子组件包括（i）驻留在第一平面中并具有第一孔的第一大致平面的电极; （ii）位于大致平行于第一平面并具有与第一孔对准的第二孔的第二平面中的第二大体平面电极; 和（iii）将第一大致平面的电极连接到第二大致平面的电极的一对连接杆。连接杆允许第二大体上平面的电极相对于第一大致平面的电极大致平行且可滑动地移动。连接杆以不平行的关系定位，使得第一和第二电极在经历热膨胀时在非平行的连接杆上相对于彼此滑动，以增加或减少它们之间的距离，同时保持一个平行的关系。

9. 发明申请

US20050098117A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 有权
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20050098117A1
公开(公告)日：2005-05-12
申请号：US10702368
申请日：2003-11-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00 , H01J37/08 , H01J37/32
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

10. 发明申请

US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

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