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1. 发明授权

US09464186B2 Resin composition, hardened coating films therefrom, and photosemiconductor device using same 有权
标题翻译：树脂组合物，其硬化涂膜和使用其的光半导体器件
公开(公告)号：US09464186B2
公开(公告)日：2016-10-11
申请号：US14009909
申请日：2012-04-05
申请人： Atsushi Kameyama , Takashi Suzuki , Ryuichi Ueno , Isao Ishikura
发明人： Atsushi Kameyama , Takashi Suzuki , Ryuichi Ueno , Isao Ishikura
IPC分类号： H01L33/56 , C08L63/00 , C08G59/24 , C08G59/42 , C08K5/52 , H01L23/29 , C07D493/04 , C08G59/40 , C08K5/13 , C08G59/02
CPC分类号： C08K5/52 , C07D493/04 , C08G59/022 , C08G59/027 , C08G59/24 , C08G59/4071 , C08G59/42 , C08K5/13 , C08L63/00 , C08L2205/02 , H01L23/293 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： A resin composition prepared by blending an epoxy compound represented by the following formula (1), an acid anhydride, and a curing accelerator, wherein the epoxy compound is purified in such a way that, in a chromatogram obtained by gas chromatographic analysis, a ratio of a peak area B of peaks derived from a heavier molecular mass portion having longer retention times than the epoxy compound to a peak area A of peak(s) derived from the epoxy compound B/A is 2.0×10−3 or less. [In the formula, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 each independently represent a hydrogen atom, a halogen atom, an alkyl group which may have a substituent, or an alkoxy group which may have a substituent.].

2. 发明申请

US20100100684A1 SET ASSOCIATIVE CACHE APPARATUS, SET ASSOCIATIVE CACHE METHOD AND PROCESSOR SYSTEM 审中-公开
标题翻译：设置相关缓存设备，设置相关缓存方法和处理器系统
公开(公告)号：US20100100684A1
公开(公告)日：2010-04-22
申请号：US12580720
申请日：2009-10-16
申请人： Yasuhiko Kurosawa , Atsushi Kameyama , Shigeaki Iwasa , Hiroo Hayashi , Mitsuo Saito
发明人： Yasuhiko Kurosawa , Atsushi Kameyama , Shigeaki Iwasa , Hiroo Hayashi , Mitsuo Saito
IPC分类号： G06F12/08 , G06F12/00
CPC分类号： G06F12/0864 , G06F12/0846 , G06F12/0886 , G06F2212/1016
摘要： A set associative cache memory includes a tag memory configured to store tags which are predetermined high-order bits of an address, a tag comparator configured to compare a tag in a request address (RA) with the tag stored in the tag memory and a data memory configured to incorporate way information obtained through a comparison by the tag comparator in part of a column address.
摘要翻译：集合关联高速缓冲存储器包括：标签存储器，被配置为存储地址的预定高位位置的标签;被配置为将请求地址（RA）中的标签与存储在标签存储器中的标签进行比较的标签比较器，以及数据存储器被配置为结合通过标签比较器在列地址中的一部分比较获得的方式信息。

3. 发明授权

US06867282B2 Photocurable and thermosetting resin composition 有权
标题翻译：光固化和热固性树脂组合物
公开(公告)号：US06867282B2
公开(公告)日：2005-03-15
申请号：US10452516
申请日：2003-06-03
申请人： Tadatomi Nishikubo , Atsushi Kameyama , Masatoshi Kusama
发明人： Tadatomi Nishikubo , Atsushi Kameyama , Masatoshi Kusama
IPC分类号： C08F2/44 , C08F2/50 , C08F20/28 , C08F283/10 , C08F290/02 , C08F290/06 , C08G65/18 , C08G65/332 , C08L63/00 , C08L71/00 , C08L101/00 , G03F7/027 , G03F7/032 , G03F7/038 , C08G2/06
CPC分类号： G03F7/038 , C08F20/28 , C08F283/10 , C08F290/06 , C08F290/061 , C08G65/18 , C08G65/332 , C08L63/00 , C08L71/00 , G03F7/027 , C08L2666/22
摘要： The photocurable and thermosetting resin composition of the present invention includes (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a photopolymerization initiator, (C) a diluent, and (D) a thermosetting component. In the general formula (1), R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group, and X represents a polybasic acid anhydride residue.
摘要翻译：本发明的光固化性和热固性树脂组合物包含（A）具有以下通式（1）表示的至少一种结构的光化学能量射线固化性树脂，（B）光聚合引发剂，（C）稀释剂，和（D）热固性组分。在通式（1）中，R 1表示氢原子或1至6个碳原子的烷基，R 2，R 3和R 4独立地表示氢原子，碳原子数1〜6的烷基，芳基，芳烷基，氰基，氟原子或呋喃基，X表示多元酸酐残基。

4. 发明授权

US06861500B2 Resins curable with actinic energy ray, process for the production thereof, and photocurable and thermosetting resin composition 有权
标题翻译：用光化能射线固化的树脂，其制备方法和光固化性和热固性树脂组合物
公开(公告)号：US06861500B2
公开(公告)日：2005-03-01
申请号：US10256021
申请日：2002-09-27
申请人： Tadatomi Nishikubo , Atsushi Kameyama , Masaki Sasaki , Masatoshi Kusama
发明人： Tadatomi Nishikubo , Atsushi Kameyama , Masaki Sasaki , Masatoshi Kusama
IPC分类号： C07C69/54 , C07C69/593 , C07C69/75 , C08F283/10 , C08F290/06 , C08F299/02 , C08G65/18 , G03F7/027 , G03F7/032 , G03F7/033 , G03F7/038 , H05K3/28 , C08G65/02
CPC分类号： C08F299/026 , G03F7/027 , G03F7/032 , G03F7/033 , G03F7/038 , G03F7/0388 , H05K3/287 , Y10T428/31515 , Y10T428/31522 , Y10T428/31855
摘要： A photocurable and thermosetting resin composition comprises (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a polymerization initiator, (C) a diluent, and (D) a polyfunctional oxetane compound. The actinic energy ray-curable resin mentioned above can be produced by causing the reaction of (a) a polyfunctional oxetane compound with (b) an unsaturated monocarboxylic acid and the subsequent reaction of (c) a polybasic acid anhydride with a primary hydroxyl group of the resultant modified oxetane resin (a′). wherein R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group, and X represents a polybasic acid anhydride residue.
摘要翻译：光固化性和热固性树脂组合物包含（A）具有由以下通式（1）表示的至少一种结构的光化能量射线固化性树脂，（B）聚合引发剂，（C）稀释剂和（D）多官能氧杂环丁烷化合物。可以通过使（a）多官能氧杂环丁烷化合物与（b）不饱和一元羧酸的反应和随后的（c）多元酸酐与伯羟基的反应来制备上述光化学能量射线固化树脂得到的改性氧杂环丁烷树脂（a'），其中R 1表示氢原子或1〜6个碳原子的烷基，R 2，R 3和R 4独立地表示氢原子， 1〜6个碳原子的烷基，芳基，芳烷基，氰基，氟原子或呋喃基，X表示多元酸酐残基。

5. 发明授权

US06677797B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US06677797B2
公开(公告)日：2004-01-13
申请号：US10023947
申请日：2001-12-21
申请人： Atsushi Kameyama , Tsuneaki Fuse , Masako Yoshida , Kazunori Ohuchi
发明人： Atsushi Kameyama , Tsuneaki Fuse , Masako Yoshida , Kazunori Ohuchi
IPC分类号： H03L500
CPC分类号： H03K19/0016
摘要： An integrated circuit has first and second logic circuits having common input terminals and the same complementary logic function. The first logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a high threshold value, while the second logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a low threshold value. An output switch circuit intervenes between the p-type FET and n-type FET circuit blocks in each logic circuit and controls the power supply connection to each logic circuit. In operation, the output of the second logic circuit is connected to the output terminal to realize a low power consumption. In the standby state, the output of the first logic circuit is connected to the output terminal to realize a low leakage current.
摘要翻译：集成电路具有第一和第二逻辑电路，其具有公共的输入端和相同的互补逻辑功能。第一逻辑电路具有每个具有高阈值的p型FET电路块和n型FET电路块，而第二逻辑电路具有p型FET电路块和n型FET电路块，每个具有低阈值。输出开关电路插入每个逻辑电路中的p型FET和n型FET电路块之间，并且控制到每个逻辑电路的电源连接。在操作中，第二逻辑电路的输出连接到输出端以实现低功耗。在待机状态下，第一逻辑电路的输出连接到输出端子以实现低泄漏电流。

6. 发明授权

US06455901B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US06455901B2
公开(公告)日：2002-09-24
申请号：US09803944
申请日：2001-03-13
申请人： Atsushi Kameyama , Tsuneaki Fuse , Masako Yoshida
发明人： Atsushi Kameyama , Tsuneaki Fuse , Masako Yoshida
IPC分类号： H01L31062
CPC分类号： H03K19/00384 , H01L27/092 , H03K19/0013
摘要： A semiconductor integrated circuit has a logic circuit operated at a small power supply voltage of about 0.5V, wherein a noise margin of the logic circuit can be set at a larger value even if characteristics of the circuit vary depending upon manufacturing process conditions. Satisfactory speed can be ensured during an operation and power consumption can be reduced during a stand-by time. This is attained by controlling individual potentials of first and second conductivity type wells in which a logic circuit is formed. For this purpose, two voltage supply circuits for controlling voltages of the wells and a logic threshold voltage generator are provided.
摘要翻译：半导体集成电路具有在约0.5V的小电源电压下工作的逻辑电路，其中即使电路的特性根据制造工艺条件而变化，逻辑电路的噪声容限也可以被设置为更大的值。在操作期间可以确保令人满意的速度，并且可以在待机时间内降低功耗。这是通过控制其中形成逻辑电路的第一和第二导电类型阱的各个电位来实现的。为此，提供了用于控制阱的电压的两个电压供应电路和逻辑阈值电压发生器。

7. 发明授权

US6134424A High-frequency power amplifier and mobile communication device using same 失效
标题翻译：高频功率放大器和移动通信设备使用相同
公开(公告)号：US6134424A
公开(公告)日：2000-10-17
申请号：US943160
申请日：1997-10-03
申请人： Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Morizuka , Atsushi Kameyama , Masami Nagaoka , Hirotsugu Wakimoto , Tadahiro Sasaki
发明人： Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Morizuka , Atsushi Kameyama , Masami Nagaoka , Hirotsugu Wakimoto , Tadahiro Sasaki
IPC分类号： H03F3/60 , H01L29/08 , H01Q1/24 , H01Q11/12 , H01Q23/00 , H03F1/30 , H03F3/193 , H04B1/04 , H04B7/26 , H01L31/112
CPC分类号： H03F1/306 , H01L29/0891 , H01Q1/242 , H01Q11/12 , H01Q23/00 , H03F3/1935 , H03F2200/294 , H03F2200/372
摘要： A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.
摘要翻译：具有p口LDD结构的GaAs半导体器件的MESFET用于移动通信设备的高频功率放大器，以便降低电流消耗并增加电池的连续工作时间。高频功率放大器在MESFET的漏极和栅极之间设有栅极偏置调整反馈元件。因此，即使在向放大器供电的电池的放电电压的充满电位和终止电位之间存在很大差异的情况下，也可以在终止电位附近长时间地供给电力，使得移动通信装置可以连续使用很长时间。

8. 发明授权

US5225718A Standard-cell type semiconductor logic LSI with logical amplitude enhancer 失效
标题翻译：具有逻辑振幅增强器的标准电池型半导体逻辑LSI
公开(公告)号：US5225718A
公开(公告)日：1993-07-06
申请号：US529441
申请日：1990-05-29
申请人： Toshiki Seshita , Atsushi Kameyama , Katsue Kawakyu , Tadahiro Sasaki
发明人： Toshiki Seshita , Atsushi Kameyama , Katsue Kawakyu , Tadahiro Sasaki
IPC分类号： H01L27/02 , H03K3/037 , H03K19/0185 , H03K19/0952 , H03K19/173
CPC分类号： H03K19/018535 , H03K19/0952 , H03K19/1735 , H03K3/037 , H01L27/0207
摘要： A standard cell type gallium arsenide logic integrated circuit device includes arrays of standard cells connected to each other on a chip substrate. Each of the standard cells includes a plurality of gallium arsenide logic gates of previously selected type such as NOR gates and an inverter. The logic gate has a direct-coupled type FET logic circuit structure. In each of the standard cells, level-shift circuits are provided only for inputs of those logic gates which are directly connected to connection terminals directly associated with the other standard cell. The level-shift circuits enhance the swing width of a logic signal transmitted between the standard cells which are associated with one another, thereby increasing the operation margin. Such a level-shift circuit is not provided for internal interconnection wirings between the logic gates inside the standard cell.
摘要翻译：标准单元型砷化镓逻辑集成电路器件包括在芯片衬底上彼此连接的标准单元阵列。每个标准单元包括多个先前选择类型的砷化镓逻辑门，例如NOR门和反相器。逻辑门具有直接耦合型FET逻辑电路结构。在每个标准单元中，仅为直接连接到与另一个标准单元相关联的连接端子的那些逻辑门的输入端提供电平移位电路。电平移位电路增强了在彼此相关联的标准单元之间传输的逻辑信号的摆幅，从而增加了操作余量。这种电平移位电路不提供在标准单元内的逻辑门之间的内部互连布线。

9. 发明申请

US20140128510A1 RESIN COMPOSITION, HARDENED COATING FILMS THEREFROM, AND PHOTOSEMICONDUCTOR DEVICE USING SAME 有权
标题翻译：树脂组合物，其硬化涂料膜和使用相同的光催化剂装置
公开(公告)号：US20140128510A1
公开(公告)日：2014-05-08
申请号：US14009909
申请日：2012-04-05
申请人： Atsushi Kameyama , Takashi Suzuki , Ryuichi Ueno , Isao Ishikura
发明人： Atsushi Kameyama , Takashi Suzuki , Ryuichi Ueno , Isao Ishikura
IPC分类号： C08K5/52 , C08K5/13 , C07D493/04 , C08G59/40
CPC分类号： C08K5/52 , C07D493/04 , C08G59/022 , C08G59/027 , C08G59/24 , C08G59/4071 , C08G59/42 , C08K5/13 , C08L63/00 , C08L2205/02 , H01L23/293 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： A resin composition prepared by blending an epoxy compound represented by the following formula (1), an acid anhydride, and a curing accelerator, wherein the epoxy compound is purified in such a way that, in a chromatogram obtained by gas chromatographic analysis, a ratio of a peak area B of peaks derived from a heavier molecular mass portion having longer retention times than the epoxy compound to a peak area A of peak(s) derived from the epoxy compound B/A is 2.0×10−3 or less. [In the formula, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 each independently represent a hydrogen atom, a halogen atom, an alkyl group which may have a substituent, or an alkoxy group which may have a substituent.]
摘要翻译：通过将由下式（1）表示的环氧化合物，酸酐和固化促进剂共混而制备的树脂组合物，其中环氧化合物被纯化，使得在通过气相色谱分析获得的色谱图中，来自具有比环氧化合物更长的保留时间的较重分子量部分的峰的峰面积B与衍生自环氧化合物B / A的峰的峰面积A的峰面积B为2.0×10 -3以下。 [式中，R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9，R 10，R 11和R 12各自独立地表示氢原子，卤素原子，可以具有取代基的烷基，可以具有取代基的烷氧基。]

10. 发明授权

US07057063B2 Unsaturated carboxylic ester compound, process for producing the same, and composition curable with actinic energy ray 有权
标题翻译：不饱和羧酸酯化合物，其制备方法和可用光化能光线固化的组合物
公开(公告)号：US07057063B2
公开(公告)日：2006-06-06
申请号：US10202092
申请日：2002-07-25
申请人： Tadatomi Nishikubo , Atsushi Kameyama , Masaki Sasaki , Masatoshi Kusama
发明人： Tadatomi Nishikubo , Atsushi Kameyama , Masaki Sasaki , Masatoshi Kusama
IPC分类号： C07C69/76
CPC分类号： C08F20/26 , C07C69/533 , C07C69/54 , C08F20/28
摘要： An unsaturated monocarboxylic ester compound has at least two structures represented by the following general formula (1): wherein R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, and R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group. A curable composition comprises (A) the unsaturated carboxylic ester compound having two or more structures represented by the general formula (1) mentioned above, (B) a polymerization initiator, and optionally (C) a diluent.
摘要翻译：不饱和单羧酸酯化合物具有由以下通式（1）表示的至少两种结构：其中R 1表示氢原子或1至6个碳原子的烷基，R“ 2，R 3和R 4独立地表示氢原子，1至6个碳原子的烷基，芳基，芳烷基，氰基，氟原子或呋喃基。可固化组合物包含（A）具有两个或更多个由上述通式（1）表示的结构的不饱和羧酸酯化合物，（B）聚合引发剂和任选的（C）稀释剂。

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