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    • 1. 发明授权
    • Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
    • 用于制造用于磁阻传感器的高矫顽力硬偏置结构的方法
    • US09034149B2
    • 2015-05-19
    • US12387377
    • 2009-05-01
    • Min ZhengKunliang ZhangMin Li
    • Min ZhengKunliang ZhangMin Li
    • C23C14/58C23C14/14C23C14/02G01R33/09G11B5/31G11B5/39
    • C23C14/5833C23C14/025C23C14/14C23C14/5873G01R33/098G11B5/3163G11B5/3932
    • A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
    • 公开了用于纵向偏置MR传感器中的自由层的硬偏置(HB)结构,其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置(HB)层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。 每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。 蚀刻可以在IBD室中进行,并且在蚀刻表面上产生更高浓度的成核位点,从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。 较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。 在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。
    • 2. 发明申请
    • C-TYPE PLIERS
    • C型夹具
    • US20140202291A1
    • 2014-07-24
    • US13745896
    • 2013-01-21
    • MIN-ZHENG ZENG
    • MIN-ZHENG ZENG
    • B25B27/20
    • B25B27/205
    • A C-type pliers contains a first elongated jaw including a first recess and a third recess, a second elongated jaw including a second recess and a fourth recess; a first handle further including a first notch, and a second handle including a second notch; a switching unit including a first cover, a second cover, a shaft extending outwardly from the second cover and used to drive the first cover and the second cover simultaneously, the shaft pivots the first handle, the second handle, the first elongated jaw, and the second elongated jaw; a switching unit also including a first retainer, a second retainer, when the first retainer retains in the first recess, the second retainer retains in the fourth recess simultaneously, and when the first retainer retains in the second recess, the second retainer retains in the third recess synchronously.
    • C型钳子包括第一细长卡爪,其包括第一凹槽和第三凹槽,第二细长卡爪包括第二凹槽和第四凹槽; 还包括第一凹口的第一手柄和包括第二凹口的第二手柄; 开关单元,包括第一盖,第二盖,从第二盖向外延伸并用于同时驱动第一盖和第二盖的轴,所述轴使第一手柄,第二手柄,第一细长卡爪和 第二个细长的下巴 切换单元还包括第一保持器,第二保持器,当第一保持器保持在第一凹槽中时,第二保持器同时保持在第四凹部中,并且当第一保持器保持在第二凹部中时,第二保持器保持在 第三个休息时间同步。
    • 7. 发明授权
    • Laminated film for head applications
    • 用于头部应用的层压膜
    • US07773341B2
    • 2010-08-10
    • US11825034
    • 2007-07-03
    • Kunliang ZhangMin ZhengMin LiChen-Jung ChienCherng-Chyi Han
    • Kunliang ZhangMin ZhengMin LiChen-Jung ChienCherng-Chyi Han
    • G11B5/33
    • G11B5/3116G11B5/1278
    • A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
    • 公开了一种层叠主极层,其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合,并且在保持高磁矩的同时降低硬轴方向的剩磁,并实现Hch,Hce和 Hk。 由Hf,Zr,Ta,Al,Mg,Zn或Si中的一种或多种的氧化物,氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中,Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场(Hk)。
    • 9. 发明申请
    • Ta/W film as heating device for dynamic fly height adjustment
    • Ta / W薄膜作为动态飞行高度调节的加热装置
    • US20090323227A1
    • 2009-12-31
    • US12215825
    • 2008-06-30
    • Min ZhengMin LiChen-Jung ChienKowang LiuSung Chung
    • Min ZhengMin LiChen-Jung ChienKowang LiuSung Chung
    • G11B5/33
    • G11B5/314G11B5/6064
    • A dynamic fly heater (DFH) for improved lifetime and better film uniformity is disclosed for a magnetic head. The heater has a lower amorphous Ta layer and an upper W layer to promote small grain size and reduced electro-migration. The composite film is especially advantageous for heaters greater than 1000 Angstroms thick where dR/R is difficult to control in the prior art. The DFH may be a (Ta/W)n laminate in which the Ta layers are about 30 Angstroms thick and the combined thickness of the W layers is from 400 to 1200 Angstroms. A Ta film is preferably sputter deposited with an Ar pressure of 3 to 5 mTorr and the W film is sputter deposited in the same chamber with a 3 to 20 mTorr Ar pressure. In one embodiment, a merged read/write head has one DFH in the read head and a second DFH in the write head.
    • 公开了一种用于改善寿命和更好的膜均匀性的动态飞行加热器(DFH)。 加热器具有较低的非晶Ta层和上W层,以促进小晶粒尺寸和减少的电迁移。 复合膜对于现有技术中dR / R难以控制的大于1000埃的加热器是特别有利的。 DFH可以是(Ta / W)n层叠体,其中Ta层的厚度约为30埃,W层的组合厚度为400至1200埃。 优选以3至5mTorr的Ar压力溅射沉积Ta膜,并将W膜以3至20mTorr Ar压力溅射沉积在相同的室中。 在一个实施例中,合并的读/写头在读头中具有一个DFH,在写头中具有第二DFH。