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    • 4. 发明授权
    • Semiconductor memory device and method of operating the same
    • 半导体存储器件及其操作方法
    • US09082503B2
    • 2015-07-14
    • US13601448
    • 2012-08-31
    • Do Young Kim
    • Do Young Kim
    • G11C11/34G11C16/34
    • G11C16/3459
    • The present disclosure relates to a semiconductor device and a method of operating the semiconductor device, and particularly to a semiconductor memory device including a memory cell array and a method of operating the semiconductor memory device. The memory device includes a memory cell array including a plurality of memory cells; and a peripheral circuit configured to program a selected memory cell into a target program state, wherein the peripheral circuit performs a program operation by applying a bit line voltage determined according to the threshold voltage to a bit line of the selected memory cell when a threshold voltage of the selected memory cell is higher than a first verification voltage and is lower than a second verification voltage.
    • 本公开涉及半导体器件和操作该半导体器件的方法,特别涉及一种包括存储单元阵列的半导体存储器件以及操作该半导体存储器件的方法。 该存储装置包括一包括多个存储单元的存储单元阵列; 以及周边电路,被配置为将所选择的存储器单元编程为目标编程状态,其中,当阈值电压为阈值电压时,外围电路通过将根据阈值电压确定的位线电压施加到所选存储单元的位线来执行编程操作 所选择的存储单元高于第一验证电压并且低于第二验证电压。