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    • 1. 发明授权
    • Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatus
    • 磁头及其制造方法以及磁记录和再现装置
    • US06687082B1
    • 2004-02-03
    • US09676788
    • 2000-10-02
    • Nobuyuki IshiwataTsutomu IshiMikiko SaitoHiroaki HonjoShinsaku SaitoTamaki TobaYoshihiro Nonaka
    • Nobuyuki IshiwataTsutomu IshiMikiko SaitoHiroaki HonjoShinsaku SaitoTamaki TobaYoshihiro Nonaka
    • G11B5147
    • G11B5/3153G11B5/3163Y10T29/49044
    • A magnetic head and a manufacturing method of the magnetic head and a magnetic recording and reproducing apparatus used this head, in which the following problem is solved, are provided. A plated film realizing large saturation magnetization Bs about 2T can not realize a high resistivity at the same time, therefore, when this plated film is applied to a magnetic head, the high frequency characteristic is deteriorated. This problem is solved at the present invention. Further, the present invention provides a magnetic head that is low cost and has large saturation magnetization Bs, and has a excellent high frequency characteristic suitable for a high density recording. A magnetic head, in which a coil insulated by insulation layers is disposed between a first magnetic core for recording and a second magnetic core for recording that is disposed to face the first magnetic core for recording via a recording gap, and which executes recording by that a magnetic flux of the first and second magnetic cores for recording excited by the coil is generated from the recording gap, is provided. And at least one of the first and second magnetic cores for recording is composed of a first plated magnetic layer and a second plated magnetic layer in a state that the first plated magnetic layer is disposed at the near side of the recording gap, and saturation magnetization of the first plated magnetic layer is 1.7 T (tesla) or more. And when resistivity of the first plated magnetic layer is defined as &rgr;1 and the thickness of the first plated magnetic layer is defined as &dgr;1, and resistivity of the second plated magnetic layer is defined as &rgr;2, and the thickness of the second plated magnetic layer is defined as &dgr;2, &rgr;1
    • 提供了磁头和磁头的制造方法以及使用该磁头的磁记录和再现装置,其中解决了以下问题。 实现大约2T的饱和磁化强度Bs的电镀膜不能同时实现高电阻率,因此当将该镀膜施加到磁头时,高频特性劣化。 在本发明中解决了这个问题。 此外,本发明提供一种低成本,饱和磁化强度高的磁头,并且具有优良的高密度记录特性。 一种磁头,其中通过绝缘层绝缘的线圈被设置在用于记录的第一磁芯和用于记录的第二磁芯之间,用于记录的第二磁芯经由记录间隙设置成面对第一磁芯进行记录,并且执行记录 提供了从记录间隙产生由线圈激发的记录的第一和第二磁芯的磁通量。 并且,第一和第二记录用磁芯中的至少一个由第一镀层磁性层和第二镀覆磁性层构成,第一镀层磁性层设置在记录间隙的近侧,饱和磁化强度 的第一镀层磁性层为1.7T(特斯拉)或更高。 并且,将第一镀层磁性层的电阻率定义为rho1,将第一镀覆磁性层的厚度定义为δ1,将第二镀覆磁性层的电阻率定义为rho2,将第二镀覆磁性层的厚度设为 定义为δ2,rho1
    • 5. 发明授权
    • Magnetic random access memory and method of manufacturing the same
    • 磁性随机存取存储器及其制造方法
    • US07238540B2
    • 2007-07-03
    • US10873269
    • 2004-06-23
    • Hiroaki HonjoShinsaku Saitho
    • Hiroaki HonjoShinsaku Saitho
    • H01L21/00
    • G11C11/16
    • A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.
    • 磁性随机存取存储器包括:衬底; 第一铁磁层; 设置在与第一铁磁层相同的衬底侧的磁隧道结(MTJ)器件; 以及设置在第一铁磁层和MTJ器件之间的布线层。 MTJ装置包括与布线层相对的第二铁磁层。 第一铁磁层在衬底上的第一垂直投影和第二铁磁层在衬底上的第二垂直投影面积是不同的,并且第一和第二垂直投影中的一个包含另一个。
    • 8. 发明授权
    • Magnetoresistance element, with lower electrode anti-erosion/flaking layer
    • 磁阻元件,具有较低的电极抗侵蚀/剥落层
    • US06493195B1
    • 2002-12-10
    • US09651068
    • 2000-08-30
    • Kazuhiko HayashiKeishi OhashiNobuyuki IshiwataMasafumi NakadaEizo FukamiHiroaki HonjoHisanao TsugeAtsushi Kamijo
    • Kazuhiko HayashiKeishi OhashiNobuyuki IshiwataMasafumi NakadaEizo FukamiHiroaki HonjoHisanao TsugeAtsushi Kamijo
    • G11B5127
    • B82Y25/00B82Y10/00B82Y40/00G01R33/09G11B5/3133G11B5/3163G11B5/3903G11B5/3909G11B5/40H01F10/3268H01F41/302
    • A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.
    • 磁阻元件包括下电极层,磁阻效应层,上电极层和下电极抗侵蚀/剥落层。 在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成,使得其面向下电极层的边缘将与边缘 的下电极层。 通过使用下电极抗腐蚀/剥落层,在光致抗蚀剂层去除步骤中(当残留在图案化的下电极上的光致抗蚀剂层时,保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂 层),由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加,从而可以使上电极层和下电极层之间的电短路 从而可以获得高灵敏度和高性能的磁阻元件,并且可以提高磁阻元件的制造成品率。