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1. 发明授权

US08976583B2 Non-volatile semiconductor memory device and reading method thereof 有权
标题翻译：非易失性半导体存储器件及其读取方法
公开(公告)号：US08976583B2
公开(公告)日：2015-03-10
申请号：US13605779
申请日：2012-09-06
申请人： Hyung-Seok Kim
发明人： Hyung-Seok Kim
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/0483 , G11C16/06 , G11C16/3427
摘要： Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The non-volatile semiconductor memory device includes at least one bit line; and a cell string configured to be coupled with the bit line respectively, and include normal memory cells and dummy memory cells that are alternately coupled with each other, where normal data are programmed and read to and from the normal memory cells, and dummy memory cells are programmed with dummy data.
摘要翻译：提供了一种具有改善的读取干扰特性以及在高温下改进的保持特性的半导体存储器件及其读取方法。非易失性半导体存储器件包括至少一个位线; 以及配置为分别与位线耦合的单元串，并且包括彼此交替耦合的正常存储器单元和虚拟存储单元，其中正常数据被编程并从正常存储单元读取，并且存储单元用伪数据编程。

2. 发明申请

US20130271305A1 RESISTOR-BASED SIGMA-DELTA DAC 有权
标题翻译：基于电阻的SIGMA-DELTA DAC
公开(公告)号：US20130271305A1
公开(公告)日：2013-10-17
申请号：US13995156
申请日：2011-09-30
申请人： Hyung Seok Kim , Yee W. Li , Ashoke Ravi , Hasnain Lakdawala
发明人： Hyung Seok Kim , Yee W. Li , Ashoke Ravi , Hasnain Lakdawala
IPC分类号： H03M3/00 , H03M1/78
CPC分类号： H03M3/50 , G09G3/3688 , H03M1/00 , H03M1/0863 , H03M1/12 , H03M1/747 , H03M1/785 , H03M1/808 , H03M3/30 , H03M3/502
摘要： An inverter-driven resistor-ladder digital-to-analog (DAC) converter includes a resistor-ladder network that comprises a resistor for each bit signal of a multi-bit input signal. Each resistor of the resistor-ladder network comprises an input end and an output end. The input end of each resistor is coupled to a corresponding bit signal of the multi-bit input signal, and the output end of each resistor is coupled to an output node of the resistor-ladder network. An output voltage is generated at the output node that is based on the multi-bit input signal. In one exemplary embodiment, the multi-bit input signal is a sigma-delta (ΣΔ) modulated multi-bit input signal. In another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are related by a binary weighting. In still another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are substantially equal.
摘要翻译：逆变器驱动的电阻梯形数模（DAC）转换器包括一个电阻梯形网络，包括一个多位输入信号的每个位信号的电阻。电阻梯形网络的每个电阻器包括输入端和输出端。每个电阻器的输入端耦合到多位输入信号的对应位信号，并且每个电阻器的输出端耦合到电阻梯形网络的输出节点。在输出节点处产生基于多位输入信号的输出电压。在一个示例性实施例中，多位输入信号是Σ-Δ（SigmaDelta）调制的多位输入信号。在另一示例性实施例中，电阻梯形网络的电阻器的电阻值通过二进制加权相关。在又一示例性实施例中，电阻梯形网络的电阻器的电阻值基本相等。

3. 发明授权

US08526239B2 Semiconductor memory device and method of operating the same 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08526239B2
公开(公告)日：2013-09-03
申请号：US13096870
申请日：2011-04-28
申请人： Hyung Seok Kim
发明人： Hyung Seok Kim
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/26 , G11C16/344
摘要： A semiconductor memory device includes a memory string coupled to a bit line, a page buffer configured to sense a sensing current of the bit line in an erase verification operation or a program verification operation, and a sensing control circuit configured to differently set a level of the sensing current in the erase verification operation and the program verification operation in order to sense the threshold voltage level of a selected memory cell of the memory string.
摘要翻译：半导体存储器件包括耦合到位线的存储器串，配置为在擦除验证操作或程序验证操作中感测位线的感测电流的页缓冲器，以及感测控制电路，其被配置为不同地设置擦除验证操作中的感测电流和程序验证操作，以便感测存储器串的选定存储单元的阈值电压电平。

4. 发明申请

US20130163334A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20130163334A1
公开(公告)日：2013-06-27
申请号：US13601578
申请日：2012-08-31
申请人： Hyung Seok KIM
发明人： Hyung Seok KIM
IPC分类号： G11C16/12 , G11C16/34 , G11C16/04
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/10 , G11C16/3418
摘要： A semiconductor memory device and a method of operating the same include a circuit group configured to apply a program maintaining voltage between the program prohibition voltage and the program permission voltage to bit lines connected to programmed memory cells to prevent a decrease in threshold voltage.
摘要翻译：半导体存储器件及其操作方法包括：电路组，被配置为将程序禁止电压和程序允许电压之间的程序保持在连接到编程的存储器单元的位线上，以防止阈值电压的降低。

5. 发明申请

US20100319776A1 Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof 审中-公开
标题翻译：用于形成太阳能电池薄膜的油墨及其制备方法，CIGS薄膜太阳能电池及其制造方法
公开(公告)号：US20100319776A1
公开(公告)日：2010-12-23
申请号：US12081238
申请日：2008-04-11
申请人： Young-Ho Choe , Young-Hee Lee , Yong-Woo Choi , Hyung-Seok Kim , Ho-Gyoung Kim
发明人： Young-Ho Choe , Young-Hee Lee , Yong-Woo Choi , Hyung-Seok Kim , Ho-Gyoung Kim
IPC分类号： H01L31/032 , H01L31/18 , C09D11/00
CPC分类号： H01L21/02628 , C09D11/037 , C09D11/52 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02601 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Disclosed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer comprises Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu2Se nanoparticles and (In,Ga)2Se3 nanoparticles on the rear electrode, and heating the treated electrode with the ink.According to the present invention, since Cu(In,Ga)Se2, that is, CIGS, thin film is formed using the ink containing nanoparticles, a simple process is preferably used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc. can be easily regulated.
摘要翻译：公开了一种用于形成太阳能电池薄膜的含有纳米颗粒的油墨及其制备方法，具有至少一个光吸收层的CIGS薄膜太阳能电池，其通过在后电极上涂布或印刷上述含有墨的纳米颗粒而形成，制造相同。更具体地，上述吸收层包含Cu，In，Ga和Se元素作为其构成成分，并且这些元素通过涂覆或印刷包含Cu 2 Se纳米颗粒和（In，Ga）2 Si 3纳米颗粒在后面的油墨而存在于光吸收层中电极，并用油墨加热处理过的电极。根据本发明，由于使用含有墨水的纳米粒子形成Cu（In，Ga）Se 2即CIGS薄膜，所以优选使用简单的方法，而不需要真空处理或复杂的设备和薄的粒子膜，Ga掺杂浓度等可以容易地调节。

6. 发明申请

US20090207660A1 PROGRAM METHOD OF FLASH MEMORY DEVICE 有权
标题翻译：闪存存储器件的程序方法
公开(公告)号：US20090207660A1
公开(公告)日：2009-08-20
申请号：US12425025
申请日：2009-04-16
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
IPC分类号： G11C16/02 , G11C16/06
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要翻译：描述包括用于增加程序速度的MLC的闪速存储器件的擦除和编程方法。在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。因此，当擦除MLC时，可以减少故障发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。

7. 发明申请

US20060178156A1 Routing method in a wireless sensor network 审中-公开
标题翻译：无线传感器网络中的路由方法
公开(公告)号：US20060178156A1
公开(公告)日：2006-08-10
申请号：US11333386
申请日：2006-01-17
申请人： Hyung-Seok Kim
发明人： Hyung-Seok Kim
IPC分类号： H04Q7/20
CPC分类号： H04W40/08 , H04W40/24 , H04W84/18 , Y02D70/164 , Y02D70/324
摘要： A routing method in a wireless sensor network where sensor nodes are grouped into cells is provided. Upon receipt of detected information to be transmitted to a destination, a sensor node determines whether a cell to which the destination belongs is one hop away. If the cell of the destination is not one hop away, the sensor node selects a cell set close to the destination from available neighbor cells to which the detected information can be forwarded, selects a cell from the cell set according to energy densities of the cells in the cell set, and forwards the detected information to a main sensor node of the selected cell.
摘要翻译：提供了将传感器节点分组成小区的无线传感器网络中的路由方法。在接收到要发送到目的地的检测信息时，传感器节点确定目的地所属的小区是否是一跳。如果目的地的小区不是一跳，则传感器节点从可以被检测到的信息可以转发的可用相邻小区中选择靠近目的地的小区集，根据小区的能量密度从小区组中选择一个小区并且将检测到的信息转发到所选择的小区的主传感器节点。

8. 发明申请

US20060178150A1 Method of transmitting data with minimum energy consumption in a wireless sensor network 审中-公开
标题翻译：在无线传感器网络中以最小能耗传输数据的方法
公开(公告)号：US20060178150A1
公开(公告)日：2006-08-10
申请号：US11348497
申请日：2006-02-06
申请人： Hyung-Seok Kim
发明人： Hyung-Seok Kim
IPC分类号： G06F15/16 , H04Q7/20
CPC分类号： H04W40/08 , H04L45/48 , H04W84/18 , Y02D30/20 , Y02D70/164 , Y02D70/22 , Y02D70/324
摘要： Disclosed is a method of configuring a tree when a new sink is added in a wireless sensor network. The method includes selecting a first sensor node via which a path can run to a new sink with the smallest delay cost, if the new sink requesting the sensed information as a sink within an existing tree is added; thereafter determining whether a path connecting the first sensor node directly(direct path) to the new sink has minimal energy consumption, after selecting the first sensor node. A second sensor node via which a path can run to the new sink with the minimal energy consumption, if the direct path does not have the minimal energy consumption. Therefore, an optimal tree having the minimal energy consumption can be configured.
摘要翻译：公开了当在无线传感器网络中添加新的接收器时配置树的方法。该方法包括：如果添加了请求感测信息作为现有树中的信宿的新接收端，则选择第一传感器节点，通过该第一传感器节点路径可以以最小延迟成本运行到新信宿; 此后，在选择第一传感器节点之后，确定将第一传感器节点直接（直接路径）连接到新接收器的路径是否具有最小的能量消耗。第二传感器节点，如果直接路径没有最小的能量消耗，路径可以以最小的能量消耗运行到新的水槽。因此，可以配置具有最小能量消耗的最佳树。

9. 发明授权

US06858408B2 Recombinant plasmid pDSBCm, microorganisms transformed therewith, and method for producing an alkaline protease VapK 失效
标题翻译：重组质粒pDSBCm，其转化的微生物以及碱性蛋白酶VapK的制备方法
公开(公告)号：US06858408B2
公开(公告)日：2005-02-22
申请号：US10333261
申请日：2001-07-19
申请人： Ghee Hong Jin , Hyune Hwan Lee , Hyune Mo Rho , Hyung Seok Kim
发明人： Ghee Hong Jin , Hyune Hwan Lee , Hyune Mo Rho , Hyung Seok Kim
IPC分类号： C12N15/09 , C12N1/21 , C12N9/52 , C12N15/63 , C12R1/63 , C12P21/06 , C12N1/20 , C12N15/00 , C12P19/34
CPC分类号： C12N9/52
摘要： The invention relates to recombinant plasmid pDSBCm harboring the gene vapk-repeated region, which gene encodes alkalic protease VapK, a microorganism Vibrio metschnikovii transformed therewith, and method for producing an alkaline protease VapK using the same microorganism.
摘要翻译：本发明涉及含有基因vapk重复区的重组质粒pDSBCm，其基因编码碱性蛋白酶VapK，转化了其的转化弧菌弧菌，以及使用该微生物生产碱性蛋白酶VapK的方法。

10. 发明授权

US06780463B2 Method of forming a MOCVD-TiN thin film 失效
标题翻译：形成MOCVD-TiN薄膜的方法
公开(公告)号：US06780463B2
公开(公告)日：2004-08-24
申请号：US09927003
申请日：2001-08-08
申请人： Byoung-Youp Kim , Hyung-Seok Kim
发明人： Byoung-Youp Kim , Hyung-Seok Kim
IPC分类号： C23C1634
CPC分类号： C23C16/4411 , C23C16/34 , C23C16/4401
摘要： The present invention discloses a method of forming a titanium nitride (TiN) thin film on a substrate disposed on a susceptor in a reaction chamber with low carbon content, low resistivity, and excellent step coverage. The method forming the TiN thin film includes feeding vapor of a Tetrakis Diethylamino Titanium (TDEAT) precursor and ammonia (NH3) gas into the reaction chamber, wherein a ratio of a vaporization rate of the TDEAT precursor to a flow rate of the ammonia gas is a value in the range of 1 mg/min:20 sccm to 1 mg/min:100 sccm; maintaining an atmosphere in the reaction chamber at a pressure in the range of 0.5 to 3.0 Torr; and heating the substrate to a temperature in the range of 300 to 400 degrees Celsius (° C.).
摘要翻译：本发明公开了一种在具有低碳含量，低电阻率和优异的台阶覆盖率的反应室中的基座上设置的基板上形成氮化钛（TiN）薄膜的方法。形成TiN薄膜的方法包括将四乙基二乙基氨基钛（TDEAT）前体和氨（NH 3）气体的蒸气进料到反应室中，其中TDEAT前体的汽化速率与氨气流速的比率为 1mg / min范围内的值：20sccm〜1mg / min：100sccm; 在0.5-3.0乇的压力下保持反应室中的气氛; 并将基底加热至300至400摄氏度（℃）范围内的温度。

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