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    • 9. 发明申请
    • Sacrificial self-aligned interconnect structure
    • 牺牲自对准互连结构
    • US20060113576A1
    • 2006-06-01
    • US11329739
    • 2006-01-11
    • Michael WalkerKarl Robinson
    • Michael WalkerKarl Robinson
    • H01L29/94H01L29/00
    • H01L21/76895H01L21/743H01L21/76897H01L23/535H01L27/10855H01L28/60H01L2924/0002H01L2924/00
    • A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material to the side of an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the semiconductor device. A method for making the interconnect structure maintains a preexisting geometry of the active region during etching of an interconnect structure hole in which the interconnect structure is formed and saves process steps. Under the method, a region of insulating material is formed immediately adjacent the active region location. A nitride layer is formed over the active region and protects the active region while an interconnect structure hole is etched partially into the region of insulating material adjacent the active region location with an etching process that is selective to the nitride layer. The interconnect structure hole is filled with polysilicon, the surface of the substrate assembly is planarized, and the nitride layer is removed.
    • 牺牲的自对准多晶硅互连结构形成在绝缘材料的区域到有源区位置的侧面并且位于衬底组件的半导体器件的下方,以便电连接有源区域和半导体器件。 用于制造互连结构的方法在蚀刻形成互连结构的互连结构孔期间保持有源区的预先存在的几何形状,并且节省了工艺步骤。 在该方法下,绝缘材料的区域紧邻有源区位置形成。 在有源区上形成氮化物层并保护有源区,同时利用对氮化物层有选择性的蚀刻工艺将互连结构孔部分地蚀刻到与有源区位置相邻的绝缘材料区域内。 互连结构孔填充有多晶硅,衬底组件的表面被平坦化,并且氮化物层被去除。