专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07868286B2 Mounted imaging device 有权
标题翻译：安装成像装置
公开(公告)号：US07868286B2
公开(公告)日：2011-01-11
申请号：US12427332
申请日：2009-04-21
申请人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01J40/14
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

2. 发明授权

US07362935B2 Dual wavelength semiconductor laser source for optical pickup 失效
标题翻译：用于光学拾取器的双波长半导体激光源
公开(公告)号：US07362935B2
公开(公告)日：2008-04-22
申请号：US11076946
申请日：2005-03-11
申请人： Susumu Koike , Kenichi Matsuda
发明人： Susumu Koike , Kenichi Matsuda
IPC分类号： G02B6/26 , G02B6/42 , G02B6/10
CPC分类号： B82Y20/00 , G02B6/12007 , G02B6/1225
摘要： The dual wavelength semiconductor laser source for an optical pickup includes: two semiconductor laser elements outputting laser beams having oscillating wavelengths different from each other; and a multiplexing waveguide, formed inside of a photonic crystal having a photonic band gap, having one output end outputting laser light at one end surface and two input ends at the other end surfaces. Output beams of the two semiconductor laser elements are coupled to the respective two input ends of the multiplexing waveguide and the two beams are outputted from the one output end of the multiplexing waveguide.
摘要翻译：用于光学拾取器的双波长半导体激光源包括：输出具有彼此不同的振荡波长的激光束的两个半导体激光器元件; 以及形成在具有光子带隙的光子晶体内部的多路复用波导，具有在一个端面输出激光的一个输出端和在另一个端面的两个输入端。两个半导体激光元件的输出光束耦合到复用波导的相应的两个输入端，并且两个波束从复用波导的一个输出端输出。

3. 发明授权

US06617568B1 Side-face incidence type photo detector 失效
标题翻译：侧面入射型光电检测器
公开(公告)号：US06617568B1
公开(公告)日：2003-09-09
申请号：US09525837
申请日：2000-03-15
申请人： Kenichi Matsuda
发明人： Kenichi Matsuda
IPC分类号： H01L3100
CPC分类号： H01L31/035281 , H01L31/109 , Y02E10/50
摘要： A photo detector includes: a semiconductor substrate having a first principal face and a second principal face; a photo detection area formed on the first principal face of the semiconductor substrate; a negative electrode electrically connected with the photo detection area; a positive electrode; a beveled face formed at least one edge portion of the first principal face of the semiconductor substrate; and a reflector formed on the second principal face of the semiconductor substrate, wherein incident light from outside of the semiconductor substrate, enters the semiconductor substrate at a side face of the photo detector while being refracted at the beveled face, and thereafter is reflected from the reflector so as to reach the photo detection area.
摘要翻译：光电检测器包括：具有第一主面和第二主面的半导体衬底; 形成在所述半导体衬底的所述第一主面上的光检测区域; 与所述光检测区域电连接的负极; 正极; 形成半导体衬底的第一主面的至少一个边缘部分的斜面; 以及形成在半导体衬底的第二主面上的反射器，其中来自半导体衬底的入射光在光电检测器的侧面进入半导体衬底，同时在斜面处被折射，然后从反射器，以到达光检测区域。

4. 发明授权

US06399967B1 Device for selectively detecting light by wavelengths 失效
标题翻译：用于通过波长选择性地检测光的装置
公开(公告)号：US06399967B1
公开(公告)日：2002-06-04
申请号：US09611143
申请日：2000-07-06
申请人： Kenichi Matsuda
发明人： Kenichi Matsuda
IPC分类号： H01L31101
CPC分类号： H01L31/1105 , H01L31/02162 , H01L31/02165 , H01L31/105 , H01L31/1892 , Y02E10/50
摘要： A light receiving device includes a semiconductor substrate, a light absorbing layer provided on the semiconductor substrate, a window layer provided on the light absorbing layer, a wavelength filter provided on the window layer, and a diffusion region provided in the wavelength filter and the window layer. A forbidden bandwidth of the wavelength filter is smaller than a forbidden bandwidth of the window layer, and a forbidden bandwidth of the light absorbing layer is smaller than the forbidden bandwidth of the wavelength filter.
摘要翻译：光接收装置包括半导体衬底，设置在半导体衬底上的光吸收层，设置在光吸收层上的窗口层，设置在窗口层上的波长滤光器，以及设置在该波长滤光器和窗口中的扩散区域层。波长滤波器的禁带宽度小于窗口层的禁止带宽，并且光吸收层的禁止带宽小于波长滤波器的禁止带宽。

5. 发明授权

US5742720A Optical coupling module and method for producing the same 失效
公开(公告)号：US5742720A
公开(公告)日：1998-04-21
申请号：US705428
申请日：1996-08-29
申请人： Yasuhiro Kobayashi , Kenichi Matsuda
发明人： Yasuhiro Kobayashi , Kenichi Matsuda
IPC分类号： G02B6/36 , G02B6/38 , G02B6/42
CPC分类号： G02B6/4231 , G02B6/4214 , G02B6/4249 , G02B6/3636 , G02B6/3652 , G02B6/3676 , G02B6/3692 , G02B6/3839 , G02B6/423
摘要： Mutually parallel V grooves are formed on the upper surface of a first support member of an optical fiber array ferrule, and then an optical fiber wire is disposed in each of the V grooves. Stacked thereon is a second support member having V grooves formed on both the upper and lower surfaces thereof so as to oppose each other, the V grooves on the lower surface serving as guiding grooves. An optical fiber wire is also disposed in each of the V grooves on the upper surface of the second support member. Further stacked thereon is a third support member having V grooves formed on the lower surface thereof, so that an optical fiber array ferrule is configured. The optical fiber array ferrule as well as a surface emitting laser array are mounted on a single substrate so that an optical coupling module is configured.

6. 发明授权

US5574330A Electron gun and method of assembling it 失效
标题翻译：电子枪及其组装方法
公开(公告)号：US5574330A
公开(公告)日：1996-11-12
申请号：US398807
申请日：1995-03-06
申请人： Kenichi Matsuda , Takeshi Mera , Satoru Endo
发明人： Kenichi Matsuda , Takeshi Mera , Satoru Endo
IPC分类号： H01J9/18 , H01J29/48 , H01J29/70 , H01J29/46
CPC分类号： H01J29/485 , H01J2229/502
摘要： There is provided an electron gun which has an assembly precision improved by the reduction of deformation of an electrode during assembly as well as good focusing performance due to the elimination of positional deviation of electron beams. There is also provided a method of assembling such an electron gun. The electron gun comprises a composite electrode including at least two electrode elements united together and a plurality of electrodes sequentially arrayed along a single axis at predetermined intervals. In the electron gun, opposed faces of the electrode elements of the composite electrode are perpendicular to the axis and the opposed faces are provided with projections 1a and 1b which serve to constitute the composite electrode when the projections are united together in opposed relationship to each other.
摘要翻译：提供了一种电子枪，其具有通过组装期间电极的变形减小以及由于消除电子束的位置偏差而导致良好的聚焦性能而提高的组装精度。还提供了组装这种电子枪的方法。电子枪包括复合电极，其包括至少两个电极元件结合在一起，并且多个电极以预定间隔沿着单个轴顺序排列。在电子枪中，复合电极的电极元件的相对面垂直于轴线，并且相对面设有突起1a和1b，当突起彼此相对关联时，它们用于构成复合电极。

7. 发明授权

US5416044A Method for producing a surface-emitting laser 失效
标题翻译：表面发射激光器的制造方法
公开(公告)号：US5416044A
公开(公告)日：1995-05-16
申请号：US209558
申请日：1994-03-11
申请人： Toyoji Chino , Kenichi Matsuda
发明人： Toyoji Chino , Kenichi Matsuda
IPC分类号： H01S5/183 , H01L21/20
CPC分类号： H01S5/1838 , H01S2301/176 , H01S5/18341 , H01S5/18344 , H01S5/18352 , H01S5/3095 , H01S5/423 , Y10S148/012 , Y10S148/095
摘要： A method for producing a surface-emitting laser, includes the steps of: forming a mask pattern to define a top mirror on a semiconductor substrate, the semiconductor substrate having a first semiconductor multilayer formed on the semiconductor substrate, a second semiconductor multilayer formed on the first semiconductor multilayer, and a third semiconductor multilayer formed on the second semiconductor multilayer, the first semiconductor multilayer constituting a bottom mirror, the second semiconductor layer including an upper barrier layer and a lower barrier layer, and an active layer sandwiched between the upper and lower barrier layers, the third semiconductor multilayer constituting a top mirror; forming the top mirror by partially removing the third semiconductor layer by dry etching using the mask pattern as a mask until the surface of the upper barrier layer of the second semiconductor multilayer is exposed; forming an etching protective film at least on the side of the top mirror; partially removing the active layer, the upper barrier layer, and the lower barrier layer by dry etching using the mask pattern and the etching protective film as masks; and partially removing the active layer, the upper barrier layer, and the lower barrier layer by wet etching so that the active layer has an area smaller than that of the top mirror.
摘要翻译：一种表面发射激光器的制造方法，包括以下步骤：形成掩模图案，以在半导体衬底上限定顶镜，所述半导体衬底具有形成在所述半导体衬底上的第一半导体多层，形成在所述半导体衬底上的第二半导体多层第一半导体层叠体和形成在第二半导体层叠体上的第三半导体层叠体，第一半导体层叠体构成底镜，第二半导体层包括上阻挡层和下阻挡层，以及活性层夹在上下阻挡层，构成上反射镜的第三半导体层; 通过使用掩模图案作为掩模通过干蚀刻部分去除第三半导体层来形成顶镜，直到暴露第二半导体多层的上阻挡层的表面; 至少在上反射镜侧形成蚀刻保护膜; 通过使用掩模图案和蚀刻保护膜作为掩模的干蚀刻部分去除有源层，上阻挡层和下势垒层; 并通过湿蚀刻部分去除有源层，上阻挡层和下势垒层，使得有源层的面积小于上反射镜的面积。

8. 发明授权

US5321294A Shift register having optically bistable elements coupled by an optical waveguide layer 失效
标题翻译：具有通过光波导层耦合的光学双稳态元件的移位寄存器
公开(公告)号：US5321294A
公开(公告)日：1994-06-14
申请号：US81659
申请日：1993-06-24
申请人： Toyoji Chino , Kenichi Matsuda
发明人： Toyoji Chino , Kenichi Matsuda
IPC分类号： H01L27/15 , H01L33/00 , H01L31/12 , H01L31/16
CPC分类号： H01L27/15
摘要： A shift register according to the present invention includes: a plurality of first electrodes; at least one second electrode; a voltage application unit for applying a voltage to each of the plurality of first electrodes; a plurality of optically bistable elements connected to each of the plurality of first electrodes and at least one second electrode; and an optical waveguide layer for optically coupling the plurality of optically bistable elements to each other.
摘要翻译：根据本发明的移位寄存器包括：多个第一电极; 至少一个第二电极; 电压施加单元，用于向所述多个第一电极中的每一个施加电压; 连接到多个第一电极和至少一个第二电极中的每一个的多个光学双稳态元件; 以及用于将多个光学双稳态元件彼此光学耦合的光波导层。

9. 发明授权

US5095200A Optoelectronic memory, logic, and interconnection device including an optical bistable circuit 失效
标题翻译：包括光学双稳态电路的光电存储器，逻辑和互连装置
公开(公告)号：US5095200A
公开(公告)日：1992-03-10
申请号：US640278
申请日：1991-01-11
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G06E3/00 , G11C11/42 , H03K3/42 , H03K17/795
CPC分类号： H03K17/7955 , G06E3/006 , G11C11/42 , H03K3/42
摘要： An optoelectronic memory, logic, and interconnection device having an optical bistable circuit as an essential element. The optical bistable circuit includes an optical bistable switch which is a light emitting device and a first phototransistor detecting the light emitted from the light emitting device, connected in series, a second phototransistor connected in parallel to the optical bistable switch which does not detect the light emitted from the light emitting device, and a load resistor connected in series to the optical bistable switch. The optoelectronic memory, logic, and interconnection device operates as an optoelectronic memory device turned on and off with the same light source, as an optoelectronic logic device executing exclusive OR operation, or as a light source for reconfigurable optical interconnection.
摘要翻译：具有光学双稳态电路作为必需元件的光电存储器，逻辑和互连器件。光学双稳态电路包括光双稳态开关，其是发光器件和第一光电晶体管，其检测从串联连接的发光器件发射的光，并联连接到不检测光的光学双稳态开关的第二光电晶体管从发光器件发射的负载电阻器和与光学双稳态开关串联连接的负载电阻器。光电存储器，逻辑器件和互连器件作为光电存储器件工作，作为与执行异或运算的光电逻辑器件相同的光源，或作为用于可重构光互连的光源而导通和截止的光电存储器件。

10. 外观设计

USD310615S Bread baking machine 失效
公开(公告)号：USD310615S
公开(公告)日：1990-09-18
申请号：US156235
申请日：1988-02-16
申请人： Isao Kitai , Kenichi Matsuda , Mikio Ogasawara
设计人： Isao Kitai , Kenichi Matsuda , Mikio Ogasawara

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式