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1. 发明授权

US07582950B2 Semiconductor chip having gettering layer, and method for manufacturing the same 有权
标题翻译：具有吸杂层的半导体芯片及其制造方法
公开(公告)号：US07582950B2
公开(公告)日：2009-09-01
申请号：US11190011
申请日：2005-07-27
申请人： Kazuhito Matsukawa , Tsuyoshi Koga , Akio Nishida , Yoshiko Higashide , Jun Shibata , Hiroshi Tobimatsu
发明人： Kazuhito Matsukawa , Tsuyoshi Koga , Akio Nishida , Yoshiko Higashide , Jun Shibata , Hiroshi Tobimatsu
IPC分类号： H01L29/06
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48471 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2924/01079 , H01L2924/10253 , H01L2924/15311 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
摘要翻译：在半导体芯片A中，其中在正面上形成具有晶体管等的元件层2，并且背面与诸如封装基板的底层部件接合，厚度T为100μm以下，此后，在半导体芯片A的背面上形成吸气层3.吸气层3例如通过使用研磨机对所述半导体芯片A的背面进行研磨而形成。因此，在组装包装的步骤中可以提高装置的产量。

2. 发明申请

US20060019959A1 Novel quinoxalinone derivatives 失效
标题翻译：新型喹喔啉酮衍生物
公开(公告)号：US20060019959A1
公开(公告)日：2006-01-26
申请号：US10532677
申请日：2003-10-27
申请人： Hiroshi Hirai , Nobuhiko Kawanishi , Masaaki Hirose , Tetsuya Sugimoto , Kaori Kamijyo , Jun Shibata , Kouta Masutani
发明人： Hiroshi Hirai , Nobuhiko Kawanishi , Masaaki Hirose , Tetsuya Sugimoto , Kaori Kamijyo , Jun Shibata , Kouta Masutani
IPC分类号： A61K31/498 , C07D498/14 , C07D491/14
CPC分类号： C07D487/18 , A61K31/4995 , A61K31/506 , A61K31/517 , A61K31/5377 , A61K31/55 , C07D498/18 , C07D498/22 , C07D515/18 , C07D515/22
摘要： A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn-1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B′1, B′2, . . . , B′n-1 and B′n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.
摘要翻译：式（I）的喹喔啉酮衍生物或其药学上可接受的盐或酯，其中： X是NH，S等; Y为O等; 该部分结构例如是以下公式：B 1，B 2，...。。。（其中n为4,5或6）各自独立地为CH，N等;其中n为4或5或6。 B'1，B'2，...，。。，其中n为4,5或6个，各自独立地为氢等;其中n为4或5或6。和R是氢，低级烷基等。

3. 发明授权

US06864587B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06864587B2
公开(公告)日：2005-03-08
申请号：US10389958
申请日：2003-03-18
申请人： Jun Shibata
发明人： Jun Shibata
IPC分类号： H01L27/04 , H01L21/60 , H01L21/82 , H01L21/822 , H01L23/485 , H01L23/50 , H01L23/525 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/06 , H01L23/50 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/0401 , H01L2224/04042 , H01L2224/05 , H01L2224/05554 , H01L2224/05578 , H01L2224/05624 , H01L2224/1134 , H01L2224/13028 , H01L2224/1308 , H01L2224/13099 , H01L2224/451 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/49 , H01L2224/85399 , H01L2924/00014 , H01L2924/10161 , H01L2924/19043 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first pad, a second pad and a conductor. The first pad is formed on the interlayer insulating film and its circumferential edges are covered with a first surface-protecting film. The second pad formed on the interlayer insulating film facing the first pad across a second surface-protecting film, and its circumferential edges are covered with a third surface-protecting film. The conductor is provided continuously on the first pad, the first to third surface-protecting films, and the second pad.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的层间绝缘膜，第一焊盘，第二焊盘和导体。第一焊盘形成在层间绝缘膜上，并且其周边边缘被第一表面保护膜覆盖。第二焊盘在第二表面保护膜上面对第一焊盘的层间绝缘膜上形成，其周向边缘被第三表面保护膜覆盖。导体连续设置在第一焊盘，第一至第三表面保护膜和第二焊盘上。

4. 发明授权

US6071755A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US6071755A
公开(公告)日：2000-06-06
申请号：US360484
申请日：1999-07-23
申请人： Shinji Baba , Jun Shibata , Tetsuya Ueda
发明人： Shinji Baba , Jun Shibata , Tetsuya Ueda
IPC分类号： H01L21/60 , H01L21/56 , H01L21/68 , H01L23/12 , H01L23/31 , H01L23/433 , H01L23/498 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/568 , H01L23/3128 , H01L23/4334 , H01L23/49816 , H01L24/16 , H01L2221/68345 , H01L2224/11003 , H01L2224/1147 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/18161 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/351
摘要： A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate to a transferring substrate on which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.
摘要翻译：半导体器件包括封装半导体衬底的封装树脂，引线图案或被转移或固定在封装树脂的下表面上的层叠布线层和设置在引线图案的下表面上的多个外部电极。该器件可以通过将半导体衬底粘合到其上形成引线图案的转印衬底上，将封装转印衬底的上部的树脂覆盖半导体衬底，并且仅将转印衬底除去，并将引线图案留下封装树脂和半导体衬底。

5. 发明授权

US5777150A Substituted amic acid derivatives 失效
标题翻译：取代的酰胺酸衍生物
公开(公告)号：US5777150A
公开(公告)日：1998-07-07
申请号：US696152
申请日：1996-08-13
申请人： Takashi Nomoto , Masahiro Hayashi , Jun Shibata , Yoshikazu Iwasawa , Morihiro Mitsuya , Yoshiaki Iida , Katsumasa Nonoshita , Yasufumi Nagata
发明人： Takashi Nomoto , Masahiro Hayashi , Jun Shibata , Yoshikazu Iwasawa , Morihiro Mitsuya , Yoshiaki Iida , Katsumasa Nonoshita , Yasufumi Nagata
IPC分类号： C07C69/34 , C07C211/27 , C07C211/29 , C07C215/52 , C07C217/60 , C07C233/05 , C07C233/13 , C07C233/18 , C07C235/06 , C07D213/38 , C07D213/40 , C07D215/12 , C07D215/48 , C07D263/32 , C07D307/14 , C07D307/52 , C07D307/81 , C07D317/58 , C07D333/20 , C07D333/28 , C07D333/54 , C07D333/58 , C07C69/78 , C07C69/767 , C07C69/773 , C07D317/34
CPC分类号： C07D213/40 , C07C211/27 , C07C211/29 , C07C215/52 , C07C217/60 , C07C233/05 , C07C233/13 , C07C233/18 , C07C235/06 , C07C69/34 , C07D213/38 , C07D215/12 , C07D215/48 , C07D263/32 , C07D307/14 , C07D307/52 , C07D307/81 , C07D317/58 , C07D333/20 , C07D333/28 , C07D333/54 , C07D333/58
摘要： A compound of the formula (I) or its pharmaceutically acceptable salt or ester: ##STR1## wherein each of ##STR2## which are the same or different, is an aryl group or a heteroaromatic ring group; A is a C.sub.3-8 linear saturated or unsaturated aliphatic hydrocarbon group which may have substituent(s) selected from the group consisting of a lower alkyl group, a hydroxyl group, a lower alkoxy group, a carboxyl group, an aryl group and an aralkyl group; Q is a single bond or a group of the formula --CO--O--, --O--CO--, --CH.sub.2 CH.sub.2 --, --CH.dbd.CH--, --OCH.sub.2 --, --SCH.sub.2 --, --CH.sub.2 O-- or --CH.sub.2 S--; each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 which are the same or different, is a hydrogen atom, a halogen atom, a lower alkyl group, a hydroxyl group, a lower alkoxy group, or an aryl or heteroaromatic ring group which may have substituent(s) selected from the group consisting of a halogen atom, a lower alkyl group and a lower alkoxy group; each of R.sup.5, R.sup.6 and R.sup.7 which are the same or different, is a hydrogen atom or a lower alkyl group; and R.sup.8 is a hydrogen atom, a lower alkyl group, a lower alkenyl group, a lower alkynyl group or an aralkyl group, provided that when Q is a single bond, ##STR3## are not simultaneously 4-chlorophenyl groups.
摘要翻译：式（I）化合物或其药学上可接受的盐或酯：其中每个相同或不同的芳基是芳基或杂芳环; A是可以具有选自低级烷基，羟基，低级烷氧基，羧基，芳基和芳烷基的取代基的C3-8直链饱和或不饱和脂族烃基组; Q是单键或式-CO-O-，-O-CO-，-CH 2 CH 2 - ， - CH = CH - ， - OCH 2 - ， - CH 2 - ， - CH 2 O-或-CH 2 S--的基团; R 1，R 2，R 3和R 4相同或不同的是氢原子，卤素原子，低级烷基，羟基，低级烷氧基或可具有取代基的芳基或杂芳族环基选自卤素原子，低级烷基和低级烷氧基的基团; R 5，R 6和R 7各自相同或不同，为氢原子或低级烷基; 并且R8是氢原子，低级烷基，低级烯基，低级炔基或芳烷基，条件是当Q为单键时，＆lt; IMAGE＆gt;不同时为4-氯苯基。

6. 发明授权

US5701033A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5701033A
公开(公告)日：1997-12-23
申请号：US593965
申请日：1996-01-30
申请人： Tetsuya Ueda , Jun Shibata , Yomiyuki Yama
发明人： Tetsuya Ueda , Jun Shibata , Yomiyuki Yama
IPC分类号： H01L23/04 , H01L23/02 , H01L23/057 , H01L23/13 , H01L23/64 , H01L23/12 , H01L23/28 , H01L23/34
CPC分类号： H01L23/057 , H01L23/13 , H01L23/642 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2924/01079 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/1532 , H01L2924/16195 , H01L2924/19041 , Y10S257/924
摘要： A semiconductor device comprising a substrate having a hollow cavity for mounting a semiconductor element therein and a lowered step surface at a periphery of the cavity for mounting a chip component thereon. A semiconductor element is mounted within the cavity and a chip capacitor is mounted to the lowered step surface. The semiconductor element and the chip component are adapted to be connected to an external circuit through electrical conductors. A cap is attached to the substrate and a seal material is filled into a space defined between the cap and the substrate for sealing the cavity and for encapsulating the chip component on the lowered step surface which may extend along the entire periphery of the cavity. The cap may include a projection adapted to abut gainst a side wall of the lowered step surface, or alternatively, the lowered step surface may include a side wall having a projection adapted to abut against periphery of the cap. The semiconductor device may further comprise a heat sink attached to the semiconductor element.
摘要翻译：一种半导体器件，包括具有用于将半导体元件安装在其中的中空腔的衬底和用于在其上安装芯片部件的空腔周围的降低的台阶表面。半导体元件安装在空腔内，并且片状电容器安装到降低的台阶表面。半导体元件和芯片部件适于通过电导体连接到外部电路。盖子连接到基板上，并且将密封材料填充到限定在盖和基板之间的空间中，用于密封空腔并将芯片部件封装在可沿着空腔的整个周边延伸的降低的台阶表面上。帽可以包括适于抵靠降低的台阶表面的侧壁的突起，或者替代地，降低的台阶表面可以包括具有适于抵靠盖的周边的突起的侧壁。半导体器件还可以包括附接到半导体元件的散热器。

7. 发明授权

US5315105A Optical operational memory device 失效
标题翻译：光操作存储设备
公开(公告)号：US5315105A
公开(公告)日：1994-05-24
申请号：US100076
申请日：1993-07-29
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G02F3/02 , G06C3/00 , H01L27/144 , H01L27/15 , H01L31/10 , H03K19/14 , H01J40/14
CPC分类号： H01L27/1443 , H01L27/15
摘要： An optical operational memory device comprises a light-emitting device, a first and second phototransistors, and a load resistor. The light-emitting device and the first phototransistor are connected electrically in series to form an optical bistable switch based on optical positive feedback. The second phototransistor is connected in parallel to the optical bistable switch, and the load resistor is connected in series to the optical bistable switch. The time constant given by the product of the current gain of the second phototransistor, the base-collector capacitance of the second phototransistor, and the resistance of the load resistor is larger than the period required for recombination of the excess majority carriers in the base of the first phototransistor. A single optical beam modulated with pulse signals is input to the first and the second phototransistors simultaneously. The optical pulse with a peak power in a predetermined range turns the optical bistable switch on, and the pulse with higher peak power turns the optical bistable switch off.
摘要翻译：光学操作存储器件包括发光器件，第一和第二光电晶体管和负载电阻器。发光器件和第一光电晶体管串联电连接以形成基于光学正反馈的光学双稳态开关。第二光电晶体管与光双稳态开关并联连接，负载电阻与光双稳态开关串联。由第二光电晶体管的电流增益，第二光电晶体管的基极集电极电容和负载电阻的电阻的乘积给出的时间常数大于基极中的多余载流子的复合所需的时间第一个光电晶体管。用脉冲信号调制的单个光束同时输入到第一和第二光电晶体管。具有预定范围内的峰值功率的光脉冲使光学双稳态开关导通，并且具有较高峰值功率的脉冲使光学双稳态开关断开。

8. 发明授权

US5309021A Semiconductor device having particular power distribution interconnection arrangement 失效
标题翻译：具有特定配电互连装置的半导体装置
公开(公告)号：US5309021A
公开(公告)日：1994-05-03
申请号：US961352
申请日：1992-10-15
申请人： Haruo Shimamoto , Jun Shibata , Toru Tachikawa , Tetsuya Ueda , Hiroshi Seki
发明人： Haruo Shimamoto , Jun Shibata , Toru Tachikawa , Tetsuya Ueda , Hiroshi Seki
IPC分类号： H01L21/60 , H01L23/28 , H01L23/495 , H01L23/50 , H05K1/02 , H05K3/34 , H01L39/02 , H01L23/58 , H01L23/12 , H01L23/48
CPC分类号： H01L23/49527 , H01L23/49517 , H05K3/341 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/30107 , H05K1/0263 , H05K2201/10659 , H05K2201/10689 , H05K3/3426 , Y02P70/613
摘要： A semiconductor device according to the present invention has reduced inductance on a power supply line, a grounding line, and signal lines. In this invention, to reduce the length of the power supply connection and that of the grounding connection, a power supply metal post and a grounding metal post are respectively provided on a power supply lead of a semiconductor chip and grounding lead of the semiconductor chip perpendicular to the leads. The metal posts protrude from the resin encapsulating the chip and are connected to lands or a conductive circuit pattern on a printed circuit board. Furthermore, a planar conductor commonly connecting the power supply or grounding potentials is provided.
摘要翻译：根据本发明的半导体器件具有减小电源线，接地线和信号线上的电感。在本发明中，为了减小电源连接的长度和接地连接的长度，分别在半导体芯片的电源引线和半导体芯片的接地引线垂直地设置电源金属柱和接地金属柱到线索金属柱从封装芯片的树脂突出，并连接到印刷电路板上的焊盘或导电电路图案。此外，提供通常连接电源或接地电位的平面导体。

9. 发明授权

US4956682A Optoelectronic integrated circuit 失效
标题翻译：光电集成电路
公开(公告)号：US4956682A
公开(公告)日：1990-09-11
申请号：US154214
申请日：1988-02-10
申请人： Kiyoshi Ohnaka , Hiraaki Tsujii , Yoichi Sasai , Jun Shibata
发明人： Kiyoshi Ohnaka , Hiraaki Tsujii , Yoichi Sasai , Jun Shibata
IPC分类号： H01L27/15 , H01S5/026 , H01S5/062
CPC分类号： H01L27/15 , H01S5/0261 , H01S5/06203
摘要： An optoelectronic integrated circuit includes an N.sup.+ type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate, a P type cladding layer partially formed on the surface of the P type waveguide, a laser composed of these N.sup.+ type and N type cladding layers, active layer, waveguide and P type cladding layer, and an N type emitted layer wider in band gap than the P type waveguide formed partially on the surface of the P type waveguide, thereby composing a heterojunction bipolar transistor using the N type cladding layer as the collector and the P type waveguide as the base.
摘要翻译：光电集成电路包括N +型覆层，N型覆层，与N型覆层相比带隙小的有源层和比半导体层顺序形成的有源层更大的带隙的P型波导基板，部分地形成在P型波导的表面上的P型包覆层，由这些N +型和N型覆盖层，有源层，波导和P型覆层形成的激光，以及更宽带的N型发射层间隙比部分地形成在P型波导表面上的P型波导，从而构成使用N型包覆层作为集电体和P型波导作为基极的异质结双极晶体管。

10. 发明授权

US07709475B2 Selective inhibitors against Cdk4 and Cdk6 having aminothiazole skeleton 失效
标题翻译：具有氨基噻唑骨架的Cdk4和Cdk6选择性抑制剂
公开(公告)号：US07709475B2
公开(公告)日：2010-05-04
申请号：US11596735
申请日：2005-05-19
申请人： Yoshikazu Iwasawa , Jun Shibata , Tadashi Shimamura , Hideki Kurihara , Takashi Mita , Nobuhiko Kawanishi , Takashi Hashihayata , Mikako Kawamura , Takeshi Sagara , Sachie Arai , Hiroshi Hirai
发明人： Yoshikazu Iwasawa , Jun Shibata , Tadashi Shimamura , Hideki Kurihara , Takashi Mita , Nobuhiko Kawanishi , Takashi Hashihayata , Mikako Kawamura , Takeshi Sagara , Sachie Arai , Hiroshi Hirai
IPC分类号： C07D417/12 , A61K31/506 , C07D417/14 , C07D491/08
CPC分类号： C07D417/14 , C07D417/12 , C07D491/08
摘要： The present invention relates to a compound represented by Formula [I]: wherein X is O, S, NH or CH2; Y1, Y2, Y3, Y4 and Y5, which may be identical or different, are each CH or N; however, at least one of Y1, Y2, Y3, Y4 and Y5 is N; Z1 and Z2, which may be identical or different, are each CH or N; n is an integer from 1 to 3; R1 is a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aliphatic heterocyclic ring or an aromatic heterocyclic ring, or a bicyclic aliphatic saturated hydrocarbon group; R2 and R3, which may be identical or different, are each a hydrogen atom, a lower alkyl group, a lower alkenyl group, a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aromatic heterocyclic ring, or the like; and R4 is a hydrogen atom, a lower alkyl group, a C3-C6 cycloalkyl group or the like, or a pharmaceutically acceptable salt or ester thereof, and a selective inhibitor against Cdk4 and/or Cdk6 or an anticancer agent containing the compound or a pharmaceutically acceptable salt or ester thereof.
摘要翻译：本发明涉及由式[I]表示的化合物：其中X是O，S，NH或CH 2; Y1，Y2，Y3，Y4和Y5可以相同或不同，分别为CH或N; 然而，Y 1，Y 2，Y 3，Y 4和Y 5中的至少一个为N; 可以相同或不同的Z 1和Z 2各自为CH或N; n为1〜3的整数， R1是C3-C8环烷基，C6-C10芳基，脂族杂环或芳族杂环，或双环脂族饱和烃基; R2和R3可以相同或不同，分别为氢原子，低级烷基，低级烯基，C3-C8环烷基，C6-C10芳基，芳族杂环等; R4为氢原子，低级烷基，C3-C6环烷基等，或其药学上可接受的盐或酯，以及对Cdk4和/或Cdk6的选择性抑制剂或含有该化合物或其药学上可接受的盐或酯。

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