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1. 发明授权

US5315105A Optical operational memory device 失效
标题翻译：光操作存储设备
公开(公告)号：US5315105A
公开(公告)日：1994-05-24
申请号：US100076
申请日：1993-07-29
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G02F3/02 , G06C3/00 , H01L27/144 , H01L27/15 , H01L31/10 , H03K19/14 , H01J40/14
CPC分类号： H01L27/1443 , H01L27/15
摘要： An optical operational memory device comprises a light-emitting device, a first and second phototransistors, and a load resistor. The light-emitting device and the first phototransistor are connected electrically in series to form an optical bistable switch based on optical positive feedback. The second phototransistor is connected in parallel to the optical bistable switch, and the load resistor is connected in series to the optical bistable switch. The time constant given by the product of the current gain of the second phototransistor, the base-collector capacitance of the second phototransistor, and the resistance of the load resistor is larger than the period required for recombination of the excess majority carriers in the base of the first phototransistor. A single optical beam modulated with pulse signals is input to the first and the second phototransistors simultaneously. The optical pulse with a peak power in a predetermined range turns the optical bistable switch on, and the pulse with higher peak power turns the optical bistable switch off.
摘要翻译：光学操作存储器件包括发光器件，第一和第二光电晶体管和负载电阻器。发光器件和第一光电晶体管串联电连接以形成基于光学正反馈的光学双稳态开关。第二光电晶体管与光双稳态开关并联连接，负载电阻与光双稳态开关串联。由第二光电晶体管的电流增益，第二光电晶体管的基极集电极电容和负载电阻的电阻的乘积给出的时间常数大于基极中的多余载流子的复合所需的时间第一个光电晶体管。用脉冲信号调制的单个光束同时输入到第一和第二光电晶体管。具有预定范围内的峰值功率的光脉冲使光学双稳态开关导通，并且具有较高峰值功率的脉冲使光学双稳态开关断开。

2. 发明授权

US5095200A Optoelectronic memory, logic, and interconnection device including an optical bistable circuit 失效
标题翻译：包括光学双稳态电路的光电存储器，逻辑和互连装置
公开(公告)号：US5095200A
公开(公告)日：1992-03-10
申请号：US640278
申请日：1991-01-11
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G06E3/00 , G11C11/42 , H03K3/42 , H03K17/795
CPC分类号： H03K17/7955 , G06E3/006 , G11C11/42 , H03K3/42
摘要： An optoelectronic memory, logic, and interconnection device having an optical bistable circuit as an essential element. The optical bistable circuit includes an optical bistable switch which is a light emitting device and a first phototransistor detecting the light emitted from the light emitting device, connected in series, a second phototransistor connected in parallel to the optical bistable switch which does not detect the light emitted from the light emitting device, and a load resistor connected in series to the optical bistable switch. The optoelectronic memory, logic, and interconnection device operates as an optoelectronic memory device turned on and off with the same light source, as an optoelectronic logic device executing exclusive OR operation, or as a light source for reconfigurable optical interconnection.
摘要翻译：具有光学双稳态电路作为必需元件的光电存储器，逻辑和互连器件。光学双稳态电路包括光双稳态开关，其是发光器件和第一光电晶体管，其检测从串联连接的发光器件发射的光，并联连接到不检测光的光学双稳态开关的第二光电晶体管从发光器件发射的负载电阻器和与光学双稳态开关串联连接的负载电阻器。光电存储器，逻辑器件和互连器件作为光电存储器件工作，作为与执行异或运算的光电逻辑器件相同的光源，或作为用于可重构光互连的光源而导通和截止的光电存储器件。

3. 发明授权

US5308440A Method of making semiconductor device with air-bridge interconnection 失效
标题翻译：制造具有气桥互连的半导体器件的方法
公开(公告)号：US5308440A
公开(公告)日：1994-05-03
申请号：US939230
申请日：1992-09-02
申请人： Toyoji Chino , Kenichi Matsuda , Jun Shibata
发明人： Toyoji Chino , Kenichi Matsuda , Jun Shibata
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/761 , H01L21/768 , H01L23/482 , H01L23/522 , H01L31/10 , B44C1/22
CPC分类号： H01L23/4821 , H01L23/5221 , H01L2924/0002 , Y10S148/105
摘要： A semiconductor device with air-bridge interconnection comprises: a substrate; a plurality of mesas with distance therebetween smaller than a predetermined value; and a metal layer supported by the plurality of mesas, the metal layer having a narrow portion at the intermediate portion thereof and both ends having larger width than the narrow portion. The air-bridge interconnection is obtained by side-etching controlled during dry-etching using interconnection metal layer as an etching-mask to remove a mass of semiconductor material under the interconnection metal layer. A method of producing the semiconductor device comprises the steps of forming a semiconductor material; forming a metal layer on a portion of the semiconductor material having a narrow portion in the intermediate portion thereof; and forming the air-bridge interconnection by dry-etching with side-etching controlled to form a groove having a predetermined depth; then forming a resistive layer on the bottom of the layer; and then dry-etching the semiconductor material and the metal layers again to remove a mass of the semiconductor material under the metal layer.
摘要翻译：具有空气桥互连的半导体器件包括：衬底; 多个台面，其间距小于预定值; 以及由所述多个台面支撑的金属层，所述金属层在其中间部分具有窄部分，并且两端具有比所述窄部分宽的宽度。通过使用互连金属层作为蚀刻掩模在干法蚀刻期间控制的侧面蚀刻获得空气桥互连，以去除互连金属层下的半导体材料。制造半导体器件的方法包括以下步骤：形成半导体材料; 在其中间部分具有窄部分的半导体材料的一部分上形成金属层; 并通过干蚀刻形成空气桥互连，并通过侧蚀进行控制以形成具有预定深度的凹槽; 然后在层的底部形成电阻层; 然后再次干蚀刻半导体材料和金属层以去除金属层下面的半导体材料。

4. 发明授权

US5014096A Optoelectronic integrated circuit with optical gate device and phototransistor 失效
标题翻译：光电集成电路与光栅器件和光电晶体管
公开(公告)号：US5014096A
公开(公告)日：1991-05-07
申请号：US473562
申请日：1990-02-01
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G02B6/122 , G02B6/12 , G02F3/02 , G06N3/067 , H01L27/14 , H01L27/144 , H01L27/15 , H01L31/12 , H03K3/42 , H03K17/795
CPC分类号： H01L31/125 , G06N3/067 , H01L27/1443 , H01L27/15 , H03K17/7955 , H03K3/42
摘要： An optoelectronic integrated circuit including an optical bistable circuit comprises: an optical gate device responsive to a current injected to an active layer thereof and to a first ray transmitted through the active layer for emitting first and second light rays and for controlling intensity of the first light ray in accordance with the current; and a first phototransistor serially connected with the optical gate device so arranged to receive the second light ray for causing the current to flow through the optical gate device in response to the second light ray and a set signal light ray, the first phototransistor holding flowing of the current when the second light ray is emitted. This circuit can control the first light ray incident to the optical gate device in response to a set signal light ray applied to the first phototransistor. A second phototransistor may be included for stopping emission of light by the optical gate device in response to a reset signal light ray. Such a circuit can be used in an optical neural network as a light-switching device. The first light ray is applied to an optical gate device perpendicularly or horizontally with respect to the plane of the substrate thereof. The second light ray may be emitted by a light-emitting device serially connected with the optical gate.
摘要翻译：包括光学双稳态电路的光电集成电路包括：光栅装置，其响应于注入到其有源层的电流和透过有源层的第一射线发射第一和第二光线并用于控制第一光的强度射线按照当前的; 以及与所述光栅装置串联连接的第一光电晶体管，其被布置成接收所述第二光线以响应于所述第二光线和设定信号光线而使所述电流流过所述光栅装置，所述第一光电晶体管保持流动发射第二光线时的电流。响应于施加到第一光电晶体管的设定信号光线，该电路可以控制入射到光栅装置的第一光线。可以包括第二光电晶体管，用于响应于复位信号光线停止光栅装置的发光。这样的电路可以用作光学神经网络作为光开关器件。第一光线相对于其基板的平面垂直或水平地施加到光栅装置。第二光线可以由与光栅串联连接的发光器件发射。

5. 发明授权

US5233556A Optoelectronic memory and logic device 失效
标题翻译：光电存储器和逻辑器件
公开(公告)号：US5233556A
公开(公告)日：1993-08-03
申请号：US826727
申请日：1992-01-28
申请人： Kenichi Matsuda , Jun Shibata
发明人： Kenichi Matsuda , Jun Shibata
IPC分类号： G11C11/42 , H03K3/42 , H03K19/14
CPC分类号： G11C11/42 , H03K19/14 , H03K3/42
摘要： An optoelectronic memory and logic device has a function of a reset-set flip-flop (RS-FF) or an exclusive-OR (EOR) gate. The RS-FF includes a first and a second optical inverter circuits. The optical inverter circuit includes a parallel connection of a light emitting device and a phototransistor, and a load resistor connected in series. The phototransistor in the first (second) optical inverter circuit receives the light from the lihgt emitting device in the second (first) optical inverter circuit. The RS-FF has high contrast ratio in case of emitting high output power, and operates stably when the load resistance and the bias voltage are fluctuated. The EOR gate comprises a parallel connection of an adder circuit and a multiplier circuit, and a load resistor connected in series. The adder circuit is a series connection of a light emitting device and a first phototransistor. The multiplier circuit is a series connection of a second phototransistor and a third phototransistor. The first and the second phototransistors receive a first input light, and the first and the third phototransistors receive a second input light. The EOR gate is constituted with five devices, and emits a single output light corresponding to the EOR of two input lights.
摘要翻译：光电存储器和逻辑器件具有复位触发器（RS-FF）或异或（EOR）门的功能。 RS-FF包括第一和第二光反向器电路。光学逆变器电路包括发光器件和光电晶体管的并联连接，以及串联连接的负载电阻器。第一（第二）光逆变器电路中的光电晶体管在第二（第一）光逆变器电路中接收来自发光器件的光。在发射高输出功率的情况下，RS-FF具有高对比度，并且当负载电阻和偏置电压波动时，RS-FF稳定地工作。 EOR门包括加法器电路和乘法器电路的并联连接，以及串联连接的负载电阻器。加法器电路是发光器件和第一光电晶体管的串联连接。乘法器电路是第二光电晶体管和第三光电晶体管的串联连接。第一和第二光电晶体管接收第一输入光，并且第一和第三光电晶体管接收第二输入光。 EOR门由五个装置构成，并且发射对应于两个输入光的EOR的单个输出光。

6. 发明授权

US07773646B2 Semiconductor light source and light-emitting device drive circuit 有权
标题翻译：半导体光源和发光装置驱动电路
公开(公告)号：US07773646B2
公开(公告)日：2010-08-10
申请号：US12280603
申请日：2007-03-14
申请人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
IPC分类号： H01S3/00
CPC分类号： H01S5/042
摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.
摘要翻译：半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。反向偏压的大小受流过发光器件的反向电流的值的限制。

7. 发明授权

US07738525B2 Semiconductor laser and method for fabricating the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07738525B2
公开(公告)日：2010-06-15
申请号：US12065991
申请日：2007-07-09
申请人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/162 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3404
摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
摘要翻译：半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

8. 发明授权

US07719588B2 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US07719588B2
公开(公告)日：2010-05-18
申请号：US11836265
申请日：2007-08-09
申请人： Kazutoshi Onozawa , Kenichi Matsuda
发明人： Kazutoshi Onozawa , Kenichi Matsuda
IPC分类号： H04N3/14 , H04N5/335 , H01L21/44
CPC分类号： H01L27/14627 , G02B5/1885 , H01L27/14618 , H01L27/14621 , H01L27/14683 , H01L27/14685 , H01L41/0533 , H01L2924/0002 , H04N5/2254 , H04N5/2257 , H04N5/33 , H01L2924/00
摘要： Provided is a solid-state imaging device which is able to achieve reductions in size and in thickness of the device, while being also able to have an auxiliary function of imaging lenses, an infrared cut filter, an antireflection function, a dust preventing function for downsizing of packaging, and an infrared light imaging function for capturing images at night. The solid-state imaging device includes: a light-collecting element which collects incident light; and a transparent thin film formed above the light-collecting element, and an air gap is formed between the light-collecting element and the transparent thin film. On the transparent thin film, the auxiliary function of imaging lenses, the infrared cut filter, the antireflection function, the dust preventing function for downsizing of packaging, and the infrared light imaging function for capturing images at night are integrated.
摘要翻译：提供一种能够实现装置的尺寸和厚度的减小的固态成像装置，同时还能够具有成像透镜，红外截止滤光器，抗反射功能，防尘功能，包装尺寸缩小，夜间拍摄图像的红外光成像功能。固体摄像装置包括：收集入射光的光收集元件; 以及形成在集光元件上方的透明薄膜，并且在聚光元件和透明薄膜之间形成气隙。在透明薄膜上，集成了成像透镜的辅助功能，红外截止滤光片，防反射功能，用于小型化封装的防尘功能以及用于在夜间拍摄图像的红外光成像功能。

9. 发明授权

US06458620B1 Semiconductor device and method for producing the same 失效
公开(公告)号：US06458620B1
公开(公告)日：2002-10-01
申请号：US09982717
申请日：2001-10-18
申请人： Kenichi Matsuda
发明人： Kenichi Matsuda
IPC分类号： H01L2100
CPC分类号： H01L31/103 , H01L31/02164 , H01L31/022416 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion. The light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.

10. 发明授权

US06392283B1 Photodetecting device and method of manufacturing the same 有权
公开(公告)号：US06392283B1
公开(公告)日：2002-05-21
申请号：US09449538
申请日：1999-11-29
申请人： Kenichi Matsuda
发明人： Kenichi Matsuda
IPC分类号： H01L3106
CPC分类号： H01L31/02327 , G02B6/4214 , Y10S438/928 , Y10S438/978
摘要： A light absorbing layer composed of intentionally undoped n-type InGaAs and a window layer composed of intentionally undoped n-type InP are formed sequentially on a first principal surface of a semiconductor substrate composed of n-type InP. A cathode is provided on a p-type diffused region forming an island pattern in the window layer, while an anode is provided on a second principal surface of the semiconductor substrate. A side edge portion of the second principal surface of the semiconductor substrate is formed with a gradient portion having an exposed surface with a (112) plane orientation and forming an angle of 35.3° with respect to the second principal surface. The gradient portion is formed to have a mirrored surface by using an etching solution containing hydrochloric acid and nitric acid at a volume ratio of approximately 5:1 to 3:1.

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