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1. 发明授权

US08374208B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08374208B2
公开(公告)日：2013-02-12
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures each including a quantum well emission layer and an injection layer. Moreover, the unit laminate structure has, in its subband level structure, an emission upper level, a lower level, and an injection level 4 of higher energy than the upper level, and light hν is generated by intersubband transition of electrons from the level to the level in the emission layer, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer. In addition, the emission layer includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元层压结构的级联结构，每个层叠结构均包括量子阱发射层和注入层。此外，单元层叠结构在其子带层结构中具有比上层更高能量的发射上限，较低水平和注入水平4，以及光h＆ngr; 通过电子从发射层中的电平的子带间跃迁产生，并且发射转变后的电子经由注入层注入到后续级的注入级4中。此外，发射层包括两个或更多个阱层，并且最靠近前一级的注入层的第一阱层用作用于注入电平形成的阱层。

2. 发明申请

US20110007768A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110007768A1
公开(公告)日：2011-01-13
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit laminate structure 16 has, in its subband level structure, an emission upper level 3, a lower level 2, and an injection level 4 of higher energy than the upper level 3, and light hv is generated by intersubband transition of electrons from the level 3 to the level 2 in the emission layer 17, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer 18. In addition, the emission layer 17 includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation. Accordingly, a quantum cascade laser capable of operation with high efficiency at high temperature can be realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元叠层结构16的级联结构，每个包括量子阱发射层17和注入层18。此外，单元叠层结构16在其子带层结构中具有比上层3更高能量的发射上层3，下层2和注入级4，并且通过电子的子带间转变产生光hv 从发光层17的3级到2级，发射转变后的电子经由注入层18注入后级的注入电平4.此外，发光层17包括两层以上的阱层，并且最靠近前一级的注入层的第一阱层用作注入层形成的阱层。因此，可以实现能够在高温下高效率地操作的量子级联激光器。

3. 发明授权

US08330140B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08330140B2
公开(公告)日：2012-12-11
申请号：US12843196
申请日：2010-07-26
申请人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
发明人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/3402
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18 is configured. The unit laminate structure 16 has a first upper level L3, a second upper level L4, and a lower level L2 in the emission layer 17, and an injection level L1 in the injection layer 18, an energy interval between the levels L3 and L4 is set to be smaller than the energy of an LO phonon, the layer thickness of the exit barrier layer is set in a range not less than 70% and not more than 150% of the layer thickness of the injection barrier layer, light is generated by emission transition in the emission layer 17, and electrons after the emission transition are injected from the level L2 into the level L4 of the emission layer of a subsequent stage via the level L1. Accordingly, a semiconductor light emitting device using polaritons, capable of performing a light emitting operation by current injection, is realized.
摘要翻译：构成半导体发光器件，其包括半导体衬底和有源层，该有源层形成在衬底上并且具有由包括发射层17和注入层18的多层叠层单元叠层结构16形成的级联结构。单元层叠结构16在发光层17中具有第一上层L3，第二上层L4和下层L2，以及注入层18中的注入层L1，层L3和L4之间的能量间隔为设定为小于LO声子的能量，出射阻挡层的层厚度设定在不小于注入阻挡层的层厚度的70％且不大于150％的范围内，光由发射层17中的发射跃迁以及发射跃迁之后的电子经由电平L1从电平L2注入到后级的发射层的电平L4。因此，实现了能够通过电流注入进行发光操作的使用极化子的半导体发光器件。

4. 发明授权

US07843981B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US07843981B2
公开(公告)日：2010-11-30
申请号：US11896115
申请日：2007-08-29
申请人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
发明人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/22 , H01S5/3415 , H01S5/3432 , H01S2302/02
摘要： A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each of which includes a quantum well light emitting layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, an emission upper level 3, an emission lower level 2, and an injection level 4 as an energy level higher than the emission upper level 3, and light hν is generated by means of intersubband transition of electrons from the level 3 to the level 2 in the light emitting layer 17, and electrons through the intersubband transition are injected into the injection level in a unit laminate structure of the subsequent stage via the injection layer 18, and from this injection level, electrons are supplied to the emission upper level. Thereby, a quantum cascade laser which realizes operation with a high output at a high temperature is realized.
摘要翻译：量子级联激光器由半导体衬底和设置在半导体衬底上的有源层组成，并具有通过多级层叠单元层叠结构16形成的级联结构，每个层叠结构16包括量子阱发光层17和注入层18 单元层叠结构16在其子带层结构中具有作为高于排放上层3的能级的发射上限3，排放下限2和喷射水平4，以及光h＆ngr; 通过在发光层17中从3级到2级的电子的子带间过渡产生，并且通过子带间跃迁的电子经由注入层18在后级的单元层叠结构中注入注入水平，并且从该注入水平，电子被提供给发射上限。从而实现了在高温下实现高输出的操作的量子级联激光器。

5. 发明授权

US08654809B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08654809B2
公开(公告)日：2014-02-18
申请号：US12782255
申请日：2010-05-18
申请人： Kazuue Fujita , Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa
发明人： Kazuue Fujita , Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014 , H01S5/3086 , H01S5/309 , H01S5/3407
摘要： A quantum cascade laser is configured to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, a first emission upper level Lup1, a second emission upper level Lup2 of an energy higher than the first emission upper level, an emission lower level Llow, and a relaxation level Lr of an energy lower than the emission lower level, light is generated by intersubband transitions of electrons from the first and second upper levels to the lower level, and electrons after the intersubband transitions are relaxed from the lower level to the relaxation level and injected from the injection layer 18 into an emission layer 17b of a subsequent stage via the relaxation level. Accordingly, a quantum cascade laser capable of preferably obtaining emission in a broad wavelength range is realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和有源层，其设置在衬底上并且具有由包括发射层17和注入层18的多级层压单元层压结构16形成的级联结构。单元层压体结构16在其子带电平结构中具有第一发射上电平Lup1，高于第一发射上电平的能量的第二发射上电平Lup2，发射较低电平Llow以及低于发射较低电平，光通过从第一和第二上电平到下电平的电子的子带间跃迁产生，并且子带间跃迁之后的电子从较低电平松弛到弛豫电平，并从注入层18注入到发光层17b经由弛豫程度。因此，可以实现能够优选在宽波长范围内获得发射的量子级联激光器。

6. 发明申请

US20110026556A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110026556A1
公开(公告)日：2011-02-03
申请号：US12782255
申请日：2010-05-18
申请人： Kazuue FUJITA , Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa
发明人： Kazuue FUJITA , Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014 , H01S5/3086 , H01S5/309 , H01S5/3407
摘要： A quantum cascade laser is configured to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, a first emission upper level Lup1, a second emission upper level Lup2 of an energy higher than the first emission upper level, an emission lower level Llow, and a relaxation level Lr of an energy lower than the emission lower level, light is generated by intersubband transitions of electrons from the first and second upper levels to the lower level, and electrons after the intersubband transitions are relaxed from the lower level to the relaxation level and injected from the injection layer 18 into an emission layer 17b of a subsequent stage via the relaxation level. Accordingly, a quantum cascade laser capable of preferably obtaining emission in a broad wavelength range is realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和有源层，其设置在衬底上并且具有由包括发射层17和注入层18的多级层压单元层压结构16形成的级联结构。单元层压体结构16在其子带电平结构中具有第一发射上电平Lup1，高于第一发射上电平的能量的第二发射上电平Lup2，发射较低电平Llow以及低于发射较低电平，光通过从第一和第二上电平到下电平的电子的子带间跃迁产生，并且子带间跃迁之后的电子从较低电平松弛到弛豫电平，并从注入层18注入到发光层17b经由弛豫程度。因此，可以实现能够优选在宽波长范围内获得发射的量子级联激光器。

7. 发明申请

US20110024721A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110024721A1
公开(公告)日：2011-02-03
申请号：US12843196
申请日：2010-07-26
申请人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
发明人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/3402
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18 is configured. The unit laminate structure 16 has a first upper level L3, a second upper level L4, and a lower level L2 in the emission layer 17, and an injection level L1 in the injection layer 18, an energy interval between the levels L3 and L4 is set to be smaller than the energy of an LO phonon, the layer thickness of the exit barrier layer is set in a range not less than 70% and not more than 150% of the layer thickness of the injection barrier layer, light is generated by emission transition in the emission layer 17, and electrons after the emission transition are injected from the level L2 into the level L4 of the emission layer of a subsequent stage via the level L1. Accordingly, a semiconductor light emitting device using polaritons, capable of performing a light emitting operation by current injection, is realized.
摘要翻译：构成半导体发光器件，其包括半导体衬底和有源层，该有源层形成在衬底上并且具有由包括发射层17和注入层18的多层叠层单元叠层结构16形成的级联结构。单元层叠结构16在发光层17中具有第一上层L3，第二上层L4和下层L2，以及注入层18中的注入层L1，层L3和L4之间的能量间隔为设定为小于LO声子的能量，出射阻挡层的层厚度设定在不小于注入阻挡层的层厚度的70％且不大于150％的范围内，光由发射层17中的发射跃迁以及发射跃迁之后的电子经由电平L1从电平L2注入到后级的发射层的电平L4。因此，实现了能够通过电流注入进行发光操作的使用极化子的半导体发光器件。

8. 发明申请

US20080219308A1 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US20080219308A1
公开(公告)日：2008-09-11
申请号：US11896115
申请日：2007-08-29
申请人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
发明人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
IPC分类号： H01S5/10
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/22 , H01S5/3415 , H01S5/3432 , H01S2302/02
摘要： A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each of which includes a quantum well light emitting layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, an emission upper level 3, an emission lower level 2, and an injection level 4 as an energy level higher than the emission upper level 3, and light hν is generated by means of intersubband transition of electrons from the level 3 to the level 2 in the light emitting layer 17, and electrons through the intersubband transition are injected into the injection level in a unit laminate structure of the subsequent stage via the injection layer 18, and from this injection level, electrons are supplied to the emission upper level. Thereby, a quantum cascade laser which realizes operation with a high output at a high temperature is realized.
摘要翻译：量子级联激光器由半导体衬底和设置在半导体衬底上的有源层组成，并具有通过多级层叠单元层叠结构16形成的级联结构，每个层叠结构16包括量子阱发光层17和注入层18 。单元层叠结构16在其子带层结构中具有作为高于发射上层3的能级的发射上限3，发射下限2和喷射等级4，并且光hnu通过电子从发光层17中的3级到2级的子带间跃迁，并且通过跨带过渡的电子经由注入层18在后级的单元叠层结构中注入注入水平，并且从该注入电平被提供给发射上限。从而实现了在高温下实现高输出的操作的量子级联激光器。

9. 发明授权

US08068528B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08068528B2
公开(公告)日：2011-11-29
申请号：US12523277
申请日：2007-06-06
申请人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
发明人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/34313
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
摘要翻译：量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层，并且具有级联结构，其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。此外，量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup，发射低电平Llow和弛豫微型MB，以及光通过从上层到下层的电子的子带间跃迁产生，并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB，从注入层18注入到后级发射层通过miniband MB。由此，可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器，以提高其激光器的操作性能。

10. 发明授权

US08594142B2 Wavelength-tunable light source 有权
标题翻译：波长可调光源
公开(公告)号：US08594142B2
公开(公告)日：2013-11-26
申请号：US13369830
申请日：2012-02-09
申请人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S3/10
CPC分类号： H01S5/3401 , B82Y20/00 , G02B5/1828 , G02B5/1861 , H01S3/08063 , H01S3/0815 , H01S3/1055 , H01S5/141
摘要： A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction.
摘要翻译：波长可调光源包括从第一端和第二端发射光的量子级联激光器，准直从第一端发射的光的光学系统，由光学系统准直的光在其上的第一反射部分以及第二反射部，其部分地反射从量子级联激光器的第二端发射的光并透射剩余的光。第一反射部分包括衍射特性彼此不同并且晶格面方向可变的多个衍射光栅，并且第一反射部分衍射具有与衍射特性对应的特定波长的光和晶格面方向选择的衍射光栅在与入射方向相反的方向上。

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