专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09713241B2 Reactive-species supply device and surface treatment apparatus 有权
公开(公告)号：US09713241B2
公开(公告)日：2017-07-18
申请号：US13807249
申请日：2011-06-30
申请人： Masaru Hori , Hiroyuki Kano , Tetsunori Kawasumi , Naofumi Yoshida , Akihiro Kawajiri , Toshimitsu Watanabe , Joji Isozumi
发明人： Masaru Hori , Hiroyuki Kano , Tetsunori Kawasumi , Naofumi Yoshida , Akihiro Kawajiri , Toshimitsu Watanabe , Joji Isozumi
IPC分类号： H05H1/00 , H01J37/00 , H05H1/24 , H01J37/32 , H05H1/48
CPC分类号： H05H1/24 , H01J37/32559 , H01J37/32733 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： A reactive-species supply device is configured to supply a treatment gas to an electric discharge space, for thereby supplying at least a reactive species formed in a plasma, to an object. The reactive-species supply device includes (a) at least one pair of electrodes configured to form the electric discharge space and (b) an electrode protection device configured to protect the electrodes from the treatment gas. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device.

2. 发明授权

US09447518B2 Radical generator and molecular beam epitaxy apparatus 有权
标题翻译：自由基发生器和分子束外延装置
公开(公告)号：US09447518B2
公开(公告)日：2016-09-20
申请号：US13819284
申请日：2011-08-24
申请人： Masaru Hori , Hiroshi Amano , Hiroyuki Kano , Shoji Den , Koji Yamakawa
发明人： Masaru Hori , Hiroshi Amano , Hiroyuki Kano , Shoji Den , Koji Yamakawa
IPC分类号： C23C16/00 , H01L21/326 , C30B23/02 , H05H1/46 , H01J37/32 , C30B23/06 , H05H1/30 , H05H1/24
CPC分类号： H01J37/321 , C30B23/02 , C30B23/066 , C30B25/14 , C30B29/403 , H01J37/3178 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32541 , H01J37/3266 , H01J2237/006 , H01J2237/083 , H01J2237/327 , H01J2237/3321 , H05H1/30 , H05H1/46 , H05H2001/2462 , H05H2001/2468
摘要： A radical generator includes a supply tube, a plasma-generating tube, a coil winding about an outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube, an electrode for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma, and a parasitic-plasma-preventing tube including a dielectric material which extends from a bottom of the plasma-generating tube to an opening of the supply tube in a space between the bottom and the opening, and a tip part thereof is inserted into the supply tube to cover an inner wall of the supply tube for preventing a generation of a parasitic plasma between the electrode and the inner wall of the supply tube.
摘要翻译：自由基发生器包括供给管，等离子体产生管，围绕等离子体产生管的外圆周的线圈绕组，用于在等离子体发生管中产生电感耦合等离子体，用于产生电容耦合等离子体的电极等离子体发生管，并将电容耦合等离子体添加到电感耦合等离子体;以及寄生等离子体防止管，其包括从等离子体产生管的底部延伸到供应管的开口的电介质材料在底部和开口之间，并且其顶端部分插入供应管中以覆盖供应管的内壁，以防止在电极和供应管的内壁之间产生寄生等离子体。

3. 发明授权

US09420697B2 Method for manufacturing printed wiring board 有权
标题翻译：印刷电路板制造方法
公开(公告)号：US09420697B2
公开(公告)日：2016-08-16
申请号：US13536056
申请日：2012-06-28
申请人： Yoshiyuki Iwata , Masaru Hori , Hajime Sakamoto
发明人： Yoshiyuki Iwata , Masaru Hori , Hajime Sakamoto
IPC分类号： H05K3/02 , H05K3/00 , H05K3/42
CPC分类号： H05K3/027 , H05K3/0035 , H05K3/0055 , H05K3/421 , H05K2203/095
摘要： A method for manufacturing a printed wiring board includes forming an interlayer insulation layer on a conductive circuit, applying laser to a portion of the interlayer insulation layer such that an opening reaching to the conductive circuit is formed for a via conductor, subjecting the opening to a plasma treatment using a processing gas which includes a reactive gas including a fluorovinyl ether gas having a double bond of two carbon atoms and a fluoroalkyl ether group, forming an upper conductive circuit on the interlayer insulation layer, and forming a via conductor in the opening such that the via conductor connects the conductive circuit and the upper conductive circuit.
摘要翻译：一种制造印刷电路板的方法，包括在导电电路上形成层间绝缘层，向层间绝缘层的一部分施加激光，使通孔导体形成达到导电电路的开口，使开口处于使用包括包含具有两个碳原子的双键的氟乙烯基醚气体和氟烷基醚基团的反应性气体的处理气体进行等离子体处理，在层间绝缘层上形成上导电电路，以及在开口中形成通孔导体通孔导体连接导电电路和上导电电路。

4. 发明申请

US20130168361A1 REACTIVE-SPECIES SUPPLY DEVICE AND SURFACE TREATMENT APPARATUS 有权
标题翻译：反应物供应装置和表面处理装置
公开(公告)号：US20130168361A1
公开(公告)日：2013-07-04
申请号：US13807204
申请日：2011-06-30
申请人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
发明人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
IPC分类号： B23H1/00
CPC分类号： B23H1/00 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： A reactive-species supply device is configured to supply a treatment gas to an electric discharge space that is formed by at least one pair of electrodes, for thereby supplying at least a reactive species formed in a plasma, to an object through a reactive-species output port. The reactive-species supply device includes (a) a reactive-species outlet passage disposed between the electric discharge space and the reactive-species output port and (b) an earth ground member disposed in a portion of the reactive-species outlet passage. The portion of the reactive-species outlet passage is distant, by a given distance, from the reactive-species output port. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device.
摘要翻译：反应物种供应装置被配置为将处理气体供应到由至少一对电极形成的放电空间，从而通过反应物种将至少一种形成在等离子体中的反应性物质供应给物体输出端口反应物种供应装置包括（a）设置在放电空间和反应物种输出端口之间的反应物种出口通道和（b）设置在反应物种出口通道的一部分中的接地构件。反应物种出口通道的部分距离反应物种输出端口相距一定距离。还公开了包括反应物种供应装置的表面处理装置。

5. 发明授权

US07875199B2 Radical generating method, etching method and apparatus for use in these methods 失效
标题翻译：自由基产生方法，蚀刻方法和用于这些方法的装置
公开(公告)号：US07875199B2
公开(公告)日：2011-01-25
申请号：US10578835
申请日：2004-11-09
申请人： Toshio Goto , Masaru Hori , Mikio Nagai
发明人： Toshio Goto , Masaru Hori , Mikio Nagai
IPC分类号： C23C14/34 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32706 , H01J37/32972 , H01J37/3405 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The method for generating radicals comprises: feeding F2 gas or a mixed gas of F2 gas and an inert gas into a chamber of which the inside is provided with a carbon material, supplying a carbon atom from the carbon material by applying a target bias voltage to the carbon material, and thereby generating high density radicals, wherein the ratio of CF3 radical, CF2 radical and CF radical is arbitrarily regulated by controlling the target bias voltage applied to the carbon material while measuring the infrared absorption spectrum of radicals generated inside the chamber.
摘要翻译：产生自由基的方法包括：将F2气体或F2气体和惰性气体的混合气体进料到内部设置有碳材料的室中，通过施加目标偏置电压从碳材料供给碳原子从而产生高密度自由基，其中CF 3基团，CF 2基团和CF基团的比率通过在测量室内产生的自由基的红外吸收光谱的同时控制施加到碳材料的目标偏压来任意调节。

6. 发明授权

US07710562B2 Atomic analyzer 有权
标题翻译：原子分析仪
公开(公告)号：US07710562B2
公开(公告)日：2010-05-04
申请号：US12071601
申请日：2008-02-22
申请人： Masaru Hori , Masafumi Ito
发明人： Masaru Hori , Masafumi Ito
IPC分类号： G01N21/73
CPC分类号： G01J3/443 , G01N21/73
摘要： An atomic analyzer includes a plasma generator, in which a discharge gas is fed in a micro gap between a pair of electrodes to generate nonequilibrium atmospheric pressure plasma, a bias voltage controller that includes a plasma-leading electrode for leading the nonequilibrium atmospheric pressure plasma generated by the plasma generator to an object to be irradiated, the object to be irradiated with the nonequilibrium atmospheric pressure plasma is placed on the plasma-leading electrode, a bias voltage is applied between the plasma-leading electrode and the electrodes of the plasma generator to irradiate the object with the nonequilibrium atmospheric pressure plasma, and a spectrometer that analyzes atoms spectroscopically from light emitted from atomized generated by atomizing a substance composing the object to be irradiated by the nonequilibrium atmospheric pressure plasma irradiation or from light absorbed by the atomized atoms.
摘要翻译：原子分析仪包括等离子体发生器，其中放电气体被馈送在一对电极之间的微间隙中以产生非平衡大气压等离子体;偏压控制器，其包括用于引导非平衡大气压等离子体产生的等离子体引导电极通过等离子体发生器到待照射的物体，将待平衡的大气压等离子体照射的物体放置在等离子体引出电极上，在等离子体引出电极和等离子体发生器的电极之间施加偏压，用非平衡大气压等离子体照射物体，以及光谱仪，其通过雾化由非平衡大气压等离子体照射或被雾化原子吸收的光组成被照射物体的物质产生的雾化发出的光进行光谱分析。

7. 发明授权

US07632379B2 Plasma source and plasma processing apparatus 有权
标题翻译：等离子体源和等离子体处理装置
公开(公告)号：US07632379B2
公开(公告)日：2009-12-15
申请号：US10558692
申请日：2004-05-28
申请人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
发明人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , H01J37/32009 , H01J37/32596
摘要： A plasma source (1) is composed of a chamber (2) to which a gas should be supplied and a hollow cathode electrode member (4) which is arranged on the gas flow-out side of the chamber (2) and has a plurality of electrode holes (3) through which the gas can flow. In such a plasma source (1), microcathode plasma discharge can be performed in the electrode holes (3) of the hollow cathode electrode member (4).
摘要翻译：等离子体源（1）由供应气体的室（2）和设置在室（2）的气体流出侧的中空阴极电极构件（4）构成，并且具有多个的气体可以流过的电极孔（3）。在这种等离子体源（1）中，可以在中空阴极电极部件（4）的电极孔（3）中进行微阴极等离子体放电。

8. 发明授权

US07556970B2 Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium 有权
标题翻译：修复具有低介电常数的损伤膜的方法，半导体器件制造系统和存储介质
公开(公告)号：US07556970B2
公开(公告)日：2009-07-07
申请号：US11727392
申请日：2007-03-26
申请人： Masaru Hori , Kazuhiro Kubota
发明人： Masaru Hori , Kazuhiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76814
摘要： A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a substrate through the elimination of carbon atoms by the decarbonizing effect of plasmas used in an etching process and an ashing process. CH3 radicals are produced through the thermal decomposition of C8H18O2 gas represented by a structural formula: (CH3)3COOH(CH3)3. CH3 radicals are brought into contact with the damaged layer in the SiOCH film and are made to bond to the damaged layer to repair the damaged layer.
摘要翻译：损坏的层修复方法修复形成在具有低介电常数膜的SiOCH膜的表面中的损伤层，其含有硅，碳，氧和氢，并且通过使用等离子体的脱碳效应通过消除碳原子形成在基板上在蚀刻过程和灰化过程中。通过由结构式（CH3）3COOH（CH3）3表示的C8H18O2气体的热分解产生CH3自由基。使CH3自由基与SiOCH膜中的损伤层接触，并使其与损伤层结合以修复受损层。

9. 发明申请

US20090140651A1 Discharge Light Source 审中-公开
标题翻译：放电光源
公开(公告)号：US20090140651A1
公开(公告)日：2009-06-04
申请号：US12227434
申请日：2007-05-21
申请人： Masaru Hori , Hiroyuki Kano
发明人： Masaru Hori , Hiroyuki Kano
IPC分类号： H01J17/26 , H01J61/16 , H01J61/06
CPC分类号： H01J61/86 , H01J61/0732 , H01J61/16 , H01J61/28
摘要： [Problem]To provide a light-emitting device as a point light source having a broad emission spectrum by a safe and simple process.[Means for Solving the Problem]The discharge light source shown in FIG. 1 is composed of an insulated pipe 30 and electrodes 31a and 31b. Projections 32a and 32b extend from the electrodes 31a and 31b. When a voltage is applied to the electrodes 31a and 31b in an argon gas flow through the insulated pipe 30 passing between the projections 32a and 32b, a glow discharge is generated thereby emitting light in the area between the projections 32a and 32b. The interval between the projections 32a and 32b is so narrow that the emitting area is small, and thus the light source serves as a point light source. The emission intensity increases with an increase of the gas flow rate, whereby a continuous broad emission spectrum is produced over the ultraviolet to visible region.
摘要翻译：通过安全且简单的工艺，提供具有宽发射光谱的点光源的发光装置。解决问题的手段图1所示的放电光源 1由绝缘管30和电极31a和31b组成。突起32a和32b从电极31a和31b延伸。当通过穿过突起32a和32b之间的绝缘管30的氩气流中向电极31a和31b施加电压时，产生辉光放电，从而在突起32a和32b之间的区域中发光。突起32a和32b之间的间隔非常窄，使得发射面积小，因此光源用作点光源。发射强度随着气体流量的增加而增加，从而在紫外到可见光区域产生连续的宽发射光谱。

10. 发明授权

US07517771B2 Method for manufacturing semiconductor device having trench 失效
标题翻译：具有沟槽的半导体器件的制造方法
公开(公告)号：US07517771B2
公开(公告)日：2009-04-14
申请号：US11496708
申请日：2006-08-01
申请人： Takumi Shibata , Shoichi Yamauchi , Hitoshi Yamaguchi , Masaru Hori
发明人： Takumi Shibata , Shoichi Yamauchi , Hitoshi Yamaguchi , Masaru Hori
IPC分类号： H01L21/76
CPC分类号： H01L21/28525 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28562 , H01L29/045 , H01L29/0634 , H01L29/66734
摘要： A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a plasma CVD method with using a silicon source gas. By using anisotropic character of a plasma, the epitaxial layer is selectively deposited on a bottom of the trench. Thus, the trench is filled with the epitaxial layer having no void.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在由硅制成的半导体衬底上形成沟槽; 并用外延层填充沟槽。外延层由硅制成，填充沟槽的步骤包括使用硅源气体进行等离子体CVD法的步骤。通过使用等离子体的各向异性特征，外延层选择性地沉积在沟槽的底部。因此，沟槽被无空隙的外延层填充。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式