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1. 发明授权

US07888653B2 Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权
标题翻译：用于独立控制离子束的偏转，减速和聚焦的技术
公开(公告)号：US07888653B2
公开(公告)日：2011-02-15
申请号：US12348091
申请日：2009-01-02
申请人： Peter L. Kellerman , Svetlana Radovanov , Frank Sinclair , Victor M. Benveniste
发明人： Peter L. Kellerman , Svetlana Radovanov , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J3/14 , H01J49/22 , H01J23/083
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译：公开了用于独立地控制离子束的偏转，减速和聚焦的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦的离子束。

2. 发明授权

US07767977B1 Ion source 有权
标题翻译：离子源
公开(公告)号：US07767977B1
公开(公告)日：2010-08-03
申请号：US12417929
申请日：2009-04-03
申请人： Ludovic Godet , Svetlana Radovanov , Timothy J. Miller
发明人： Ludovic Godet , Svetlana Radovanov , Timothy J. Miller
IPC分类号： H01J49/10 , H01J37/08 , H01J23/06
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J2237/0451 , H01J2237/0453 , H01J2237/0456 , H01J2237/065 , H01J2237/08 , H01J2237/083 , H01J2237/31 , H01J2237/31701 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译：离子源包括具有提取孔的电弧室和等离子体鞘调制器。等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。可以通过离子源产生具有高电流密度的良好聚焦的离子束。高电流密度离子束可以提高相关过程的吞吐量。也可以控制离子束的发射。

3. 发明授权

US06998625B1 Ion implanter having two-stage deceleration beamline 有权
标题翻译：离子注入机具有两级减速束线
公开(公告)号：US06998625B1
公开(公告)日：2006-02-14
申请号：US09602059
申请日：2000-06-23
申请人： Charles M. McKenna , Nicholas R. White , Douglas A. Brown , Edward Bell , Svetlana Radovanov
发明人： Charles M. McKenna , Nicholas R. White , Douglas A. Brown , Edward Bell , Svetlana Radovanov
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3171 , H01J2237/0041 , H01J2237/022 , H01J2237/047 , H01J2237/31705
摘要： An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.
摘要翻译：离子注入机包括用于产生离子束的离子源，用于从离子束分离不需要的组分的分析器，用于以第一输送能量输送离子束通过分析器的第一束输送装置，位于离子束下游的第一减速阶段用于将离子束从第一输送能量减速到第二输送能量的分析器，位于第一减速阶段下游的用于从离子束分离中性粒子的光束过滤器，用于将离子束传送通过束在所述第二输送能量下进行过滤，所述第二减速阶段位于所述束过滤器的下游，用于将所述离子束从所述第二输送能量减速到最终能量，以及用于支撑用于离子注入的靶的靶位点。离子束以最终能量传递到目标位置。在双重减速模式中，第二传输能量大于最低能量时的最终能量。在增强的漂移模式中，第二传输能量等于在低能量下最高光束纯度的最终能量。

4. 发明申请

US20120111834A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： B44C1/22 , H01L21/02 , H05H1/24 , C23C16/50 , C23C16/52
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

5. 发明申请

US20100255665A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

6. 发明授权

US07700925B2 Techniques for providing a multimode ion source 有权
标题翻译：提供多模离子源的技术
公开(公告)号：US07700925B2
公开(公告)日：2010-04-20
申请号：US11966312
申请日：2007-12-28
申请人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
发明人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J37/08
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

7. 发明申请

US20090166554A1 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 有权
标题翻译：提供多个离子源的技术
公开(公告)号：US20090166554A1
公开(公告)日：2009-07-02
申请号：US11966312
申请日：2007-12-28
申请人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
发明人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

8. 发明申请

US20090121149A1 TECHNIQUES FOR SHAPING AN ION BEAM 审中-公开
标题翻译：形成离子束的技术
公开(公告)号：US20090121149A1
公开(公告)日：2009-05-14
申请号：US11937849
申请日：2007-11-09
申请人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
发明人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
IPC分类号： H01J3/18
CPC分类号： H01J37/1477 , H01J37/12 , H01J37/1475 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , H01J2237/24542 , H01J2237/31701
摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.
摘要翻译：公开了用于成形离子束的技术。在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

9. 发明申请

US20070164229A1 Technique for providing a segmented electrostatic lens in an ion implanter 有权
标题翻译：在离子注入机中提供分段静电透镜的技术
公开(公告)号：US20070164229A1
公开(公告)日：2007-07-19
申请号：US11413570
申请日：2006-04-28
申请人： Svetlana Radovanov , Anthony Renau , James Buff
发明人： Svetlana Radovanov , Anthony Renau , James Buff
IPC分类号： H01J3/14
CPC分类号： H01J37/12 , H01J37/3171
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
摘要翻译：公开了一种在离子注入机中提供分段静电透镜的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。

10. 发明授权

US08604443B2 System and method for manipulating an ion beam 有权
标题翻译：用于操纵离子束的系统和方法
公开(公告)号：US08604443B2
公开(公告)日：2013-12-10
申请号：US12944537
申请日：2010-11-11
申请人： Frank Sinclair , Victor M. Benveniste , Svetlana Radovanov , James S. Buff
发明人： Frank Sinclair , Victor M. Benveniste , Svetlana Radovanov , James S. Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/3171 , H01J37/153 , H01J2237/1532
摘要： A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.
摘要翻译：用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。

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