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    • 1. 发明授权
    • Synthetic amorphous silica powder and method for producing same
    • 合成无定形二氧化硅粉末及其制造方法
    • US08883110B2
    • 2014-11-11
    • US13520807
    • 2010-12-27
    • Toshiaki Ueda
    • Toshiaki Ueda
    • C01B33/158
    • C01B33/158C01P2004/03C01P2004/30C01P2004/54C01P2004/61C01P2006/12
    • The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a granulated silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 μm; wherein the synthetic amorphous silica powder has: a quotient between 1.35 exclusive and 1.75 inclusive obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity between 0.50 inclusive and 0.75 inclusive; and a spheroidization ratio between 0.20 inclusive and 0.55 exclusive.
    • 本发明的合成无定形二氧化硅粉末的特征在于,其包含通过对粒状二氧化硅粉末进行球化处理得到的合成无定形二氧化硅粉末,然后进行清洗和干燥,使得合成无定形二氧化硅粉末具有平均粒子 直径D50为10〜2000μm; 其中所述合成无定形二氧化硅粉末具有:通过将粉末的BET比表面积除以由平均粒径D50计算出的理论比表面积而得到的商品在1.35之间的纯度和1.75之间的商; 实际密度为2.10〜2.20g / cm3; 颗粒内孔隙率为0至0.05; 0.50包括在内,包括0.75的圆形; 球化率在0.20以上,0.55之间。
    • 5. 发明申请
    • SYNTHETIC AMORPHOUS SILICA POWDER AND METHOD FOR PRODUCING SAME
    • 合成无定形二氧化硅粉及其生产方法
    • US20120299207A1
    • 2012-11-29
    • US13520807
    • 2010-12-27
    • Toshiaki Ueda
    • Toshiaki Ueda
    • B29B9/12
    • C01B33/158C01P2004/03C01P2004/30C01P2004/54C01P2004/61C01P2006/12
    • The synthetic amorphous silica powder of the present invention is characterized in that it comprises a synthetic amorphous silica powder obtained by applying a spheroidizing treatment to a granulated silica powder, and by subsequently cleaning and drying it so that the synthetic amorphous silica powder has an average particle diameter D50 of 10 to 2,000 μm; wherein the synthetic amorphous silica powder has: a quotient between 1.35 exclusive and 1.75 inclusive obtained by dividing a BET specific surface area of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity between 0.50 inclusive and 0.75 inclusive; and a spheroidization ratio between 0.20 inclusive and 0.55 exclusive.
    • 本发明的合成无定形二氧化硅粉末的特征在于,其包含通过对粒状二氧化硅粉末进行球化处理得到的合成无定形二氧化硅粉末,然后进行清洗和干燥,使得合成无定形二氧化硅粉末具有平均粒子 直径D50为10〜2000μm; 其中所述合成无定形二氧化硅粉末具有:通过将粉末的BET比表面积除以由平均粒径D50计算出的理论比表面积而得到的商品在1.35之间的纯度和1.75之间的商; 实际密度为2.10〜2.20g / cm3; 颗粒内孔隙率为0至0.05; 0.50包括在内,包括0.75的圆形; 球化率在0.20以上,0.55之间。
    • 9. 发明授权
    • Wiring layout apparatus, wiring layout method, and wiring layout program for semiconductor integrated circuit
    • 用于半导体集成电路的布线布置装置,布线布置方法和布线布局程序
    • US07735043B2
    • 2010-06-08
    • US11733940
    • 2007-04-11
    • Toshiaki Ueda
    • Toshiaki Ueda
    • G06F17/50
    • G06F17/5077
    • A wiring layout apparatus includes a layout design unit configured to design a wiring layout for a semiconductor integrated circuit; a critical wiring detection unit configured to analyze a delay of signal propagation in the wiring layout so as to detect wiring strip conductors that configure a signal path whose timing is critical; a rewiring unit configured to rearrange the wiring strip conductors so as to improve the uniformity of a wiring pattern of an area in the vicinity of the critical wiring strip conductor, with regard to the wiring layout; and a strip-conductor-size variation determination unit configured to evaluate the uniformity of the pattern of the rearranged wiring layout so as to determine whether or not variation in the size of the critical wiring strip conductor falls within a tolerance range.
    • 布线布置装置包括布置设计单元,其被配置为设计用于半导体集成电路的布线布局; 关键布线检测单元,被配置为分析布线布局中的信号传播的延迟,以便检测构成其定时关键的信号路径的布线条导体; 重布线单元,配置为重新布线布线条导体,以便提高关键布线条导体附近的区域的布线图案的均匀性; 以及带状导体尺寸变化判定单元,被配置为评估重排布线布局的图案的均匀性,以便确定关键布线条导体的尺寸的变化是否落在公差范围内。
    • 10. 发明授权
    • Surge protector
    • 浪涌保护器
    • US07660095B2
    • 2010-02-09
    • US10565422
    • 2004-07-13
    • Yasuhiro ShatoTuyoshi OgiMiki AdachiSung-Gyoo LeeTakashi KuriharaToshiaki Ueda
    • Yasuhiro ShatoTuyoshi OgiMiki AdachiSung-Gyoo LeeTakashi KuriharaToshiaki Ueda
    • H02H1/00
    • H01T4/12Y10T29/49082Y10T29/49107Y10T29/49128
    • A surge protector coated with an oxide layer having an excellent chemical stability at the high temperature range and excellent adherence with respect to main discharge electrodes. The surge protector includes a column-shaped ceramic member that has a conductive film divided by a discharge gap interposed therebetween; a pair of main discharge electrode members opposite to each other on both ends of the column-shaped ceramic member to come in contact with the conductive film; and a cylindrical ceramic tube which is fitted to the pair of main discharge electrode members opposite to each other to seal both the column-shaped ceramic member and sealing gas inside thereof. Oxide films are formed on main discharge surfaces of at least the protrusive supporting portions of the pair of main discharge electrode members opposite to each other, by performing an oxidation treatment, respectively.
    • 具有在高温范围内具有优异化学稳定性的氧化物层和相对于主放电电极具有优异粘附性的电涌保护器。 浪涌保护器包括柱状陶瓷构件,其具有通过插入其间的放电间隙分隔的导电膜; 一对在柱状陶瓷构件的两端彼此相对的主放电电极构件,以与导电膜接触; 和一对圆筒状的陶瓷管,该圆筒形陶瓷管与一对相对的主放电电极部件嵌合,以密封柱状陶瓷部件和内部的密封气体。 通过分别进行氧化处理,分别在一对主放电电极部件的至少突出支撑部的主放电面上形成氧化膜。