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1. 发明授权

US07187025B2 Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device 有权
标题翻译：铁电材料，铁电体膜及其制造方法，铁电电容器及其制造方法，铁电存储器及压电元件
公开(公告)号：US07187025B2
公开(公告)日：2007-03-06
申请号：US10807357
申请日：2004-03-24
申请人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
IPC分类号： H01L29/76
CPC分类号： H01L21/02197 , G11C11/22 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L41/1876 , H01L41/318
摘要： A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.
摘要翻译：用于形成由通式ABO 3 3描述的铁电体的铁电材料包括补偿A位置的空位的A位点补偿部件和补偿A位置的B位点补偿部件一个B网站的空缺。

2. 发明授权

US07371473B2 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 有权
标题翻译：铁电体膜，铁电体电容器，铁电体存储器，压电元件，半导体元件，铁电体膜的制造方法以及铁电体电容器的制造方法
公开(公告)号：US07371473B2
公开(公告)日：2008-05-13
申请号：US11286286
申请日：2005-11-25
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B32B9/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ≦x
摘要翻译：铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。铁电体膜包括在0.05 <= x <1的范围内的Nb。铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

3. 发明申请

US20060083933A1 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 有权
标题翻译：铁电体膜，铁电体电容器，铁电体存储器，压电元件，半导体元件，铁电体膜的制造方法以及铁电体电容器的制造方法
公开(公告)号：US20060083933A1
公开(公告)日：2006-04-20
申请号：US11286286
申请日：2005-11-25
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： G11C11/22 , H01L41/18 , B32B17/06 , B32B9/00 , B32B15/04 , B32B19/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x
摘要翻译：铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。铁电体膜包括在0.05 <= x <1的范围内的Nb。铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

4. 发明授权

US07074624B2 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory 失效
标题翻译：铁电体膜，铁电体膜的制造方法，铁电体电容器，铁电体电容器的制造方法以及铁电体存储器
公开(公告)号：US07074624B2
公开(公告)日：2006-07-11
申请号：US10808417
申请日：2004-03-25
申请人： Koji Ohashi , Takeshi Kijima , Junichi Karasawa , Yasuaki Hamada , Eiji Natori
发明人： Koji Ohashi , Takeshi Kijima , Junichi Karasawa , Yasuaki Hamada , Eiji Natori
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02282 , H01L21/28273 , H01L21/31691 , H01L27/11507 , H01L28/55
摘要： A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.
摘要翻译：制造铁电体膜的方法包括使具有复合氧化物的原料结晶，该方法包括：在施加预定压力和预定温度的第一条件下进行热处理; 并且在第一状态下的热处理之后，保持其中施加压力和低于第一状态的温度的温度的第二条件，并且通过在第一状态下重复进行热处理使原料结晶条件和维持第二个条件。

5. 发明授权

US07255941B2 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 有权
标题翻译：铁电体膜，铁电体电容器，铁电体存储器，压电元件，半导体元件，铁电体膜的制造方法以及铁电体电容器的制造方法
公开(公告)号：US07255941B2
公开(公告)日：2007-08-14
申请号：US10690021
申请日：2003-10-22
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B32B9/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x
摘要翻译：铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。铁电体膜包括在0.05 <= x <1的范围内的Nb。铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

6. 发明申请

US20060088731A1 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 审中-公开
公开(公告)号：US20060088731A1
公开(公告)日：2006-04-27
申请号：US11286284
申请日：2005-11-25
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B05D5/12
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x

7. 发明授权

US07303828B2 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device 有权
标题翻译：铁电体膜，其制造方法，铁电存储器和压电装置
公开(公告)号：US07303828B2
公开(公告)日：2007-12-04
申请号：US10807427
申请日：2004-03-24
申请人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
发明人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
IPC分类号： B32B9/00
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1254 , C23C30/00 , C30B5/00 , C30B29/30 , C30B29/32 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L41/0805 , H01L41/1876 , H01L41/1878 , H01L41/318
摘要： A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要翻译：在Pb（Zr，Ti）O 3 Fe铁电体的B位置中包含至少包含至少一种Nb，V和W中的至少一种的5〜40mol％的铁电体膜，其至少包括浓度为1％以上的铁电体钙钛矿材料的A位离子中的4重配位Si 4+或4+ 4+。这使得能够显着提高铁电体膜的可靠性。

8. 发明授权

US07214977B2 Ferroelectric thin film, method of manufacturing the same, ferroelectric memory device and ferroelectric piezoelectric device 有权
标题翻译：铁电薄膜，其制造方法，铁电存储器件和铁电体压电器件
公开(公告)号：US07214977B2
公开(公告)日：2007-05-08
申请号：US11241959
申请日：2005-10-04
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/02197 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691
摘要： A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.
摘要翻译：由高取向多晶形成的铁电薄膜，其中180°畴和90°畴以与薄膜平面中所施加的电场方向成一定角度排列，并在预定电场中反向旋转。

9. 发明授权

US07142445B2 Ferroelectric memory device, method of driving the same, and driver circuit 失效
标题翻译：铁电存储器件，其驱动方法和驱动电路
公开(公告)号：US07142445B2
公开(公告)日：2006-11-28
申请号：US10932890
申请日：2004-09-02
申请人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22 , G11C5/06 , G11C5/14 , G11C7/00 , G11C8/00
CPC分类号： G11C11/22
摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.
摘要翻译：一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式选自铁电存储单元的至少一个铁电存储单元。字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

10. 发明申请

US20050078507A1 Ferroelectric memory device, method of driving the same, and driver circuit 失效
标题翻译：铁电存储器件，其驱动方法和驱动电路
公开(公告)号：US20050078507A1
公开(公告)日：2005-04-14
申请号：US10932890
申请日：2004-09-02
申请人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.
摘要翻译：一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式选自铁电存储单元的至少一个铁电存储单元。字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

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