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1. 发明授权

US06553053B2 Vertical cavity surface emitting laser having improved light output function 有权
标题翻译：垂直腔表面发射激光器具有改善的光输出功能
公开(公告)号：US06553053B2
公开(公告)日：2003-04-22
申请号：US09912611
申请日：2001-07-25
申请人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
发明人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
IPC分类号： H01S308
CPC分类号： H01S5/18333 , H01S5/18308 , H01S5/18358 , H01S5/2063 , H01S2301/166
摘要： A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.
摘要翻译：一种激光二极管，其包括通过改变激光二极管的多个空间模式来改善光输出 - 电流曲线的导光结构。根据本发明的激光二极管包括构造在导电材料上的底部反射镜，由位于底部反射镜上方的第一导电间隔件，发光层和位于发光层上方的第二导电间隔件构成的有源区域。激光二极管还包括由位于第二导电间隔物上方的由第一导电类型的半导体材料的多个镜层构成的顶镜。相邻的镜层具有不同的折射率。改变顶镜面层中的一个或多个以提供孔限定层，其包括改变装置的空间模式的孔径区域。

2. 发明授权

US06534331B2 Method for making a vertical-cavity surface emitting laser with improved current confinement 失效
标题翻译：用于制造具有改进的电流限制的垂直腔表面发射激光器的方法
公开(公告)号：US06534331B2
公开(公告)日：2003-03-18
申请号：US09912803
申请日：2001-07-24
申请人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
发明人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
IPC分类号： H01L2100
CPC分类号： H01S5/18308 , H01L33/105 , H01L33/145 , H01S5/2059
摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.
摘要翻译：可用于构造发光器件的电流限制元件。电流限制元件包括顶层和孔限定层。顶层包括对光透明的第一导电类型的顶部半导体材料。孔径限定层包括孔区域和限制区域。开口区域包括对光透明的第一导电类型的孔径半导体材料。限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。在将剩余的镜面层沉积在孔限定层的顶部之前，通过将元件植入或漫射到一个或多个镜层中来构造光圈限定层。

3. 发明授权

US06680963B2 Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement 有权
标题翻译：垂直腔表面发射激光器利用反向偏置二极管来改善电流限制
公开(公告)号：US06680963B2
公开(公告)日：2004-01-20
申请号：US09912801
申请日：2001-07-24
申请人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
发明人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
IPC分类号： H01S5183
CPC分类号： H01S5/18308 , H01S5/18358 , H01S5/2059
摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.
摘要翻译：可用于构造发光器件的电流限制元件。电流限制元件包括顶层和孔限定层。顶层包括对光透明的第一导电类型的顶部半导体材料。孔径限定层包括孔区域和限制区域。开口区域包括对光透明的第一导电类型的孔径半导体材料。限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。在本发明的一个实施例中，限制区域包括第二导电类型的半导体材料。

4. 发明授权

US09691855B2 Method of growing a high quality III-V compound layer on a silicon substrate 有权
公开(公告)号：US09691855B2
公开(公告)日：2017-06-27
申请号：US13398954
申请日：2012-02-17
申请人： Zhen-Yu Li , Hsing-Kuo Hsia , Hao-Chung Kuo
发明人： Zhen-Yu Li , Hsing-Kuo Hsia , Hao-Chung Kuo
IPC分类号： H01L33/00 , H01L29/10 , H01L29/20 , H01L21/02 , H01L29/778 , H01L33/12
CPC分类号： H01L21/0254 , H01L21/02052 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0262 , H01L29/1075 , H01L29/20 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlxGa1-xN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer.

5. 发明授权

US08563964B2 Light emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US08563964B2
公开(公告)日：2013-10-22
申请号：US13067822
申请日：2011-06-29
申请人： Chao-Hsun Wang , Zhen-Yu Li , Hao-Chung Kuo
发明人： Chao-Hsun Wang , Zhen-Yu Li , Hao-Chung Kuo
IPC分类号： H01L29/06
CPC分类号： H01L33/42 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.
摘要翻译：公开了一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 第一半导体导电层设置在基板的第一表面上; 插入层设置在第一半导体导电层上; 活性层设置在插入层上; 第二半导体导电层设置在有源层上; 第一电极设置在第二半导体导电层上; 并且第二电极设置在基板的第二表面上，其中第二电极的电极与第一电极的电极相反。

6. 发明授权

US08216872B1 Method of integrating light-trapping layer to thin-film solar cell 有权
标题翻译：将光俘获层与薄膜太阳能电池集成的方法
公开(公告)号：US08216872B1
公开(公告)日：2012-07-10
申请号：US13031363
申请日：2011-02-21
申请人： Jia-Min Shieh , Chang-Hong Shen , Wen-Hsien Huang , Shih-Chuan Wu , Bau-Tong Dai , Jung Y. Huang , Hao-Chung Kuo
发明人： Jia-Min Shieh , Chang-Hong Shen , Wen-Hsien Huang , Shih-Chuan Wu , Bau-Tong Dai , Jung Y. Huang , Hao-Chung Kuo
IPC分类号： H01L21/00
CPC分类号： G02B5/008 , G02B5/0242 , H01L31/02168 , H01L31/056 , Y02E10/52
摘要： A light-trapping layer is integrated into a thin-film solar cell. It is integrated as a light-inlet layer, an intermediate layer or a shaded layer with nano-particles embedded in a transparent or non-transparent conductive film. Thus, light stays longer in an absorption layer with photocurrent increased; defects of interface between the absorption layer and the nano-material are decreased; anti-reflective effect to inlet light is enhanced; and a good integrity and a good reliability for long-time light-shining are obtained.
摘要翻译：光俘获层被集成到薄膜太阳能电池中。它被集成为光入口层，中间层或具有嵌入在透明或非透明导电膜中的纳米颗粒的阴影层。因此，在光电流增加的情况下，光在吸收层中保持较长时间; 吸收层与纳米材料之间的界面缺陷减小; 对入口灯的防反射效果得到提高; 并且获得了长时间发光的良好的完整性和良好的可靠性。

7. 发明授权

US07998539B2 Method of forming thin-film structure by oblique-angle deposition 有权
标题翻译：通过斜角沉积形成薄膜结构的方法
公开(公告)号：US07998539B2
公开(公告)日：2011-08-16
申请号：US12289816
申请日：2008-11-05
申请人： Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
发明人： Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
IPC分类号： C23C14/30
CPC分类号： C23C14/226 , C23C14/086 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50 , Y10T428/249953 , Y10T428/249978
摘要： A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.
摘要翻译：提供了通过斜角沉积形成薄膜结构的方法。该方法包括以下步骤：通过电子束蒸发系统蒸发室中的目标源，并且将工艺气体引入室中并调节蒸发衬底的倾斜角度并且在蒸发期间控制室中的温度以在蒸发器中形成薄膜通过斜角沉积蒸发衬底，然后对蒸发衬底进行退火以形成具有多孔纳米棒微结构的薄膜。

8. 发明授权

US08981534B2 Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate 有权
标题翻译：预切割硅衬底的背面，以在衬底的正面上生长更好的III-V族化合物层
公开(公告)号：US08981534B2
公开(公告)日：2015-03-17
申请号：US13616415
申请日：2012-09-14
申请人： Zhen-Yu Li , Chung-Pao Lin , Hsing-Kuo Hsia , Hao-Chung Kuo , Cindy Huichun Shu , Hsin-Chieh Huang
发明人： Zhen-Yu Li , Chung-Pao Lin , Hsing-Kuo Hsia , Hao-Chung Kuo , Cindy Huichun Shu , Hsin-Chieh Huang
IPC分类号： H01L29/06
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/02035 , H01L21/02458 , H01L21/0254 , H01L21/268 , H01L21/30604 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L33/0025 , H01L33/0066 , H01L33/12 , H01L33/20 , H01S5/0207 , H01S5/021 , H01S5/0218 , H01S5/34333
摘要： The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).
摘要翻译：本公开涉及一种装置。该装置包括具有前侧与前侧相对的后侧的基板。基板包括从基板的背面形成的多个开口。这些开口从平面图中共同地在基板的背面上限定图案。在一些实施例中，衬底是硅衬底或碳化硅衬底。与开口垂直对准的硅衬底的部分具有约100微米至约300微米的垂直尺寸。在硅衬底的正面上形成III-V族化合物层。 III-V族化合物层是发光二极管（LED），激光二极管（LD）和高电子迁移率晶体管（HEMT）之一的组分。

9. 发明授权

US08742442B2 Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diode 有权
标题翻译：图案化外延衬底的方法，发光二极管和形成发光二极管的方法
公开(公告)号：US08742442B2
公开(公告)日：2014-06-03
申请号：US13450424
申请日：2012-04-18
申请人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
发明人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
IPC分类号： H01L33/20
CPC分类号： H01L33/22 , H01L33/007
摘要： A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
摘要翻译：用于图案化外延衬底的方法包括：（a）在外延衬底上形成蚀刻掩模层，并且使用图案化的掩模掩模层图案化蚀刻掩模层，以将蚀刻掩模层形成为多个间隔开的掩模图案; 和（b）蚀刻从掩模图案曝光的外延基板，以及去除掩模图案，使得外延基板形成有多个间隔开的基板图案。

10. 发明申请

US20140077152A1 III-V Group Compound Devices with Improved Efficiency and Droop Rate 有权
标题翻译：具有提高效率和下降率的III-V组复合器件
公开(公告)号：US20140077152A1
公开(公告)日：2014-03-20
申请号：US13616299
申请日：2012-09-14
申请人： Zhen-Yu Li , Hon-Way Lin , Chung-Pao Lin , Hsing-Kuo Hsia , Hao-Chung Kuo
发明人： Zhen-Yu Li , Hon-Way Lin , Chung-Pao Lin , Hsing-Kuo Hsia , Hao-Chung Kuo
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , F21K9/00 , F21S6/00 , F21V3/049 , F21V7/22 , F21V29/74 , F21Y2115/10 , F21Y2115/30 , H01L21/02458 , H01L21/02507 , H01L33/0025 , H01L33/12 , H01L33/145 , H01L33/32 , H01S5/0014 , H01S5/3407 , H01S5/34333
摘要： The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.
摘要翻译：本公开涉及一种照明装置。照明装置包括n掺杂半导体化合物层，与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层和设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱（MQW）半导体复合层。 MQW包括多个交替的第一和第二层。 MQW的第一层具有基本均匀的厚度。第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。位于与p掺杂半导体化合物层最相邻的第二层的子集中掺杂有p型掺杂剂。掺杂的第二层具有相对于从p掺杂半导体层的距离而变化的渐变掺杂浓度水平。

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