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    • 8. 发明授权
    • Amplifier for improving open-loop gain and bandwidth in a switched capacitor system
    • 用于改善开关电容系统中的开环增益和带宽的放大器
    • US06486821B1
    • 2002-11-26
    • US09911331
    • 2001-07-23
    • Arlo J. AudeLaurence D. LewickiJitendra Mohan
    • Arlo J. AudeLaurence D. LewickiJitendra Mohan
    • H03M112
    • H03F1/086
    • There is disclosed an amplifier for operating from a power supply having a first voltage level. The amplifier comprises: 1) a plurality of thick-oxide field effect transistors, each of the plurality of thick-oxide field effect transistors having a relatively thick oxide layer and fabricated using a first process such that the each thick-oxide field effect transistor can withstand a gate-to-source difference, a gate-to-drain difference, and a gate-to-bulk difference at least equal to a first maximum operating voltage, wherein the first. maximum operating voltage is at least equal to the first voltage level; and 2) a first thin-oxide field effect transistor coupled to a first input of the amplifier, the first thin-oxide field effect transistor having a relatively thin oxide layer and fabricated using a second process such that the first thin-oxide field effect transistor can withstand a gate-to-source difference, a gate-to-drain difference, and a gate-to-bulk difference at least equal to a second maximum operating voltage, wherein the second maximum operating voltage is less than the first voltage level.
    • 公开了一种用于从具有第一电压电平的电源操作的放大器。 放大器包括:1)多个厚氧化物场效应晶体管,多个厚氧化物场效应晶体管中的每一个具有相对较厚的氧化物层,并且使用第一工艺制造,使得每个厚氧化物场效应晶体管可以 承受栅极至源极的差异,栅极至漏极差异以及至少等于第一最大工作电压的栅极与体积之差,其中第一。 最大工作电压至少等于第一电压电平; 以及2)耦合到所述放大器的第一输入的第一薄氧化物场效应晶体管,所述第一薄氧化物场效应晶体管具有相对薄的氧化物层,并且使用第二工艺制造,使得所述第一薄氧化物场效应晶体管 可以承受栅极至源极的差异,栅极至漏极差异以及至少等于第二最大工作电压的栅极至体积差异,其中第二最大工作电压小于第一电压电平。
    • 9. 发明授权
    • Apparatus for reducing charge kickback in a dynamic comparator
    • 用于在动态比较器中减少电荷反冲的装置
    • US06559787B1
    • 2003-05-06
    • US09911233
    • 2001-07-23
    • Arlo J. AudeLaurence D. LewickiJitendra Mohan
    • Arlo J. AudeLaurence D. LewickiJitendra Mohan
    • H03M138
    • H03K3/013H03K3/356139H03K5/2481H03K5/249
    • There is disclosed a comparator comprising: 1) a first comparison circuit capable of receiving an input signal, wherein the first comparison circuit is enabled and compares the signal when a received LATCH signal is enabled and is disabled when the received LATCH signal is disabled; and 2) a second comparison circuit coupled to the input signal in parallel with the first comparison circuit, wherein an input stage of the second comparison circuit is substantially identical to an input stage of the first comparison circuit. The second comparison circuit is enabled and compares the input signal when the received LATCH is signal is disabled and is disabled when the received LATCH signal is enabled.
    • 公开了一种比较器,包括:1)能够接收输入信号的第一比较电路,其中所述第一比较电路被使能,并且当所接收的LATCH信号被使能时将所述信号进行比较,并且当所接收的LATCH信号被禁止时被禁用; 以及2)与所述第一比较电路并联耦合到所述输入信号的第二比较电路,其中所述第二比较电路的输入级基本上与所述第一比较电路的输入级相同。 当接收的LATCH信号被禁止时,第二比较电路被使能并比较输入信号,并且当所接收的LATCH信号被使能时被禁止。
    • 10. 发明授权
    • Circuit topology for better supply immunity in a cascaded Gm/Gm amplifier
    • 电路拓扑结构,用于在级联Gm / Gm放大器中提供更好的抗干扰能力
    • US06445250B1
    • 2002-09-03
    • US09569829
    • 2000-05-12
    • Arlo J. Aude
    • Arlo J. Aude
    • H03F345
    • H03F3/45183
    • There is disclosed an amplifier comprising: 1) a plurality of cascaded NMOS differential amplifier stages, wherein a first one of the plurality of cascaded NMOS differential amplifier stages is coupled to at least one input signal; 2) a PMOS differential amplifier stage having a first input coupled to a first NMOS differential output of a last one of the plurality of cascaded NMOS differential amplifier stages and a second input coupled to a second NMOS differential output of the last cascaded NMOS differential amplifier stage, wherein the PMOS differential amplifier comprises a first diode-connected PMOS load transistor having a gate and a drain connected to ground and a second diode-connected PMOS load transistor having a gate and a drain connected to ground; and 3) an output differential amplifier stage comprising: a) load transistors comprising a third PMOS transistor having a gate and a drain connected together and a source connected to a power supply rail and a fourth PMOS transistor having a gate coupled to the third PMOS transistor gate and a source connected to the power supply rail; and b) a differential transistors pair comprising a first NMOS transistor having a gate coupled to a source of the first diode-connected PMOS load transistor and a drain coupled to a drain of the third PMOS transistor and a second NMOS transistor having a gate coupled to a source of the second diode-connected PMOS load transistor and a drain coupled to a drain of the fourth PMOS transistor.
    • 公开了一种放大器,包括:1)多个级联的NMOS差分放大器级,其中多个级联的NMOS差分放大器级中的第一级与至少一个输入信号耦合; 2)PMOS差分放大器级,其具有耦合到多个级联NMOS差分放大器级中的最后一个的差分放大器级中的最后一个的第一NMOS差分输出的第一输入和耦合到最后级联NMOS差分放大器级的第二NMOS差分输出的第二输入 其中所述PMOS差分放大器包括具有连接到地的栅极和漏极的第一二极管连接的PMOS负载晶体管和具有连接到地的栅极和漏极的第二二极管连接的PMOS负载晶体管; 以及3)输出差分放大器级,包括:a)负载晶体管,其包括具有连接在一起的栅极和漏极的第三PMOS晶体管,以及连接到电源轨的源极和具有耦合到所述第三PMOS晶体管的栅极的第四PMOS晶体管 门和源极连接到电源轨; 以及b)差分晶体管对,其包括具有耦合到所述第一二极管连接的PMOS负载晶体管的源极的栅极的第一NMOS晶体管和耦合到所述第三PMOS晶体管的漏极的漏极和第二NMOS晶体管,所述第二NMOS晶体管具有耦合到 第二二极管连接的PMOS负载晶体管的源极和耦合到第四PMOS晶体管的漏极的漏极。