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1. 发明申请

US20110148257A1 THIN FILM TUNING-FORK TYPE INFLECTION RESONATOR AND ELECTRIC SIGNAL PROCESSING ELEMENT 失效
标题翻译：薄膜调谐型输入谐振器和电信号处理元件
公开(公告)号：US20110148257A1
公开(公告)日：2011-06-23
申请号：US13036318
申请日：2011-02-28
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H01L41/047 , H01L41/04
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

2. 发明授权

US07489063B2 Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same 失效
标题翻译：薄膜压电体声波谐振器和射频滤波器使用相同
公开(公告)号：US07489063B2
公开(公告)日：2009-02-10
申请号：US11627858
申请日：2007-01-26
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
IPC分类号： H01L41/08
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译：本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

3. 发明授权

US07561010B2 Piezoelectric thin film resonators 失效
标题翻译：压电薄膜谐振器
公开(公告)号：US07561010B2
公开(公告)日：2009-07-14
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/13 , H03H9/15 , H03H3/04
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.
摘要翻译：压电薄膜谐振器形成在诸如由Si构成的基底衬底上，其中谐振频率基本上由横向尺寸决定，而不是谐振器的厚度，由此由TCXO等使用的谐振器由薄膜技术，其能够减小膜的厚度和谐振器的尺寸以及将谐振器的Si基IC集成在一个相同的衬底中。

4. 发明申请

US20070182291A1 THIN FILM TUNING-FORK TYPE INFLECTION RESONATOR AND ELECTRIC SIGNAL PROCESSING ELEMENT 失效
标题翻译：薄膜调谐型输入谐振器和电信号处理元件
公开(公告)号：US20070182291A1
公开(公告)日：2007-08-09
申请号：US11670081
申请日：2007-02-01
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/21
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

5. 发明授权

US08102102B2 Thin film tuning-fork type inflection resonator and electric signal processing element 失效
标题翻译：薄膜音叉型变形谐振器和电信号处理元件
公开(公告)号：US08102102B2
公开(公告)日：2012-01-24
申请号：US13036318
申请日：2011-02-28
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/19
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

6. 发明授权

US07915793B2 Thin film tuning-fork type inflection resonator and electric signal processing element 失效
标题翻译：薄膜音叉型变形谐振器和电信号处理元件
公开(公告)号：US07915793B2
公开(公告)日：2011-03-29
申请号：US11670081
申请日：2007-02-01
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/21 , H01L41/08
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

7. 发明申请

US20080024042A1 THIN FILM PIEZOELECTRIC BULK ACOUSTIC WAVE RESONATOR AND RADIO FREQUENCY FILTER USING THE SAME 失效
标题翻译：薄膜压电体积波形谐振器和无线电频率滤波器
公开(公告)号：US20080024042A1
公开(公告)日：2008-01-31
申请号：US11627858
申请日：2007-01-26
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
IPC分类号： H01L41/047
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译：本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

8. 发明申请

US20060158283A1 Piezoelectric thin film resonators 失效
公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

9. 发明申请

US20060267710A1 Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
标题翻译：体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器
公开(公告)号：US20060267710A1
公开(公告)日：2006-11-30
申请号：US11345538
申请日：2006-02-02
申请人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
发明人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
IPC分类号： H03H9/54
CPC分类号： H03H9/02086 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 200 GN/m2 or more.
摘要翻译：具有优异弹性和高机电能量转换效率的体声波谐振器。体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配，为7％以下，下部电极层为弹性刚度C333的值为200Ng / m 2以上的材料。

10. 发明授权

US07586390B2 Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
标题翻译：体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器
公开(公告)号：US07586390B2
公开(公告)日：2009-09-08
申请号：US11345538
申请日：2006-02-02
申请人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
发明人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
IPC分类号： H03H9/15 , H03H9/54 , H03H9/13
CPC分类号： H03H9/02086 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 300 GN/m2 or more.
摘要翻译：具有优异弹性和高机电能量转换效率的体声波谐振器。体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配，为7％以下，下部电极层为弹性刚度C33的值为300Ng / m 2以上的材料。

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