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    • 1. 发明授权
    • Method of isolation for acoustic resonator device
    • 声谐振器装置的隔离方法
    • US08631547B2
    • 2014-01-21
    • US11906196
    • 2007-10-01
    • Bradley Paul BarberLinus Albert FetterMichael George Zierdt
    • Bradley Paul BarberLinus Albert FetterMichael George Zierdt
    • H03H3/06H04R17/10
    • H03H3/02H03H9/02118H03H9/172
    • A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.
    • 隔离压电薄膜声谐振器装置以防止由装置产生的横向传播波离开装置和/或干扰相邻装置或系统的方法。 具体地说,这种隔离技术涉及在声谐振器件之间的压电材料层的操纵或隔离,以便限制在横向上远离器件传播的声能的量。 在一个方面,通过RF和声能之间的转换不涉及信号传输的压电材料的至少一部分被从器件中去除。 在另一方面,压电材料的生长在装置的制造期间被限制到某些区域。 在另一方面,在器件制造期间压电材料的晶体取向被破坏或改变,以便形成具有优异的压电性能的区域和表现出差的压电特性的区域。
    • 2. 发明授权
    • Method of tuning thin film resonator filters by removing or adding piezoelectric material
    • 通过去除或添加压电材料来调整薄膜谐振滤波器的方法
    • US06437667B1
    • 2002-08-20
    • US09497880
    • 2000-02-04
    • Bradley Paul BarberLinus Albert FetterGeorge E. RittenhouseMichael George Zierdt
    • Bradley Paul BarberLinus Albert FetterGeorge E. RittenhouseMichael George Zierdt
    • H03H954
    • H03H9/564H03H3/04H03H9/568H03H2003/0435
    • The present invention provides a method for tuning a thin film resonator (TFR) filter comprising a plurality of TFR components formed on a substrate. Each of the TFR components has a set of resonant frequencies that depend on material parameters and construction. TFR bandpass filter response for example can be produced by shifting the set of resonant frequencies in at least one of the series branch TFR components so as to establish the desired shape of the bandpass response and the desired performance of the filter. The shifting may be advantageously performed by removing piezoelectric material from the series branch TFR component, providing a TFR filter with bandwidth and attenuation advantages over that conventionally achieved by down-shifting resonant frequency sets of the shunt TFR components by adding metal material. Additionally, the above method can be used to produce a stopband TFR filter with a desired response by removing piezoelectric material from the shunt branch TFR component, to up-shift the shunt TFR components' set of resonant frequencies with respect to the series branch TFR components.
    • 本发明提供了一种用于调谐薄膜谐振器(TFR)滤波器的方法,该滤波器包括形成在基板上的多个TFR分量。 每个TFR组件具有取决于材料参数和结构的一组谐振频率。 TFR带通滤波器响应例如可以通过在串联分支TFR分量中的至少一个中移位谐振频率的集合来产生,以便建立期望的带通响应形状和滤波器的期望性能。 可以有利地通过从串联分支TFR组件去除压电材料来实现移位,从而提供比通过添加金属材料降低分流TFR分量的谐振频率组通常实现的带宽和衰减优点的TFR滤波器。 另外,上述方法可以用于通过从分流分支TFR分量去除压电材料来产生具有期望响应的阻带TFR滤波器,以使相对于串联分支TFR分量的分流TFR分量的谐振频率集合上移 。
    • 3. 发明授权
    • Method of isolation for acoustic resonator device
    • 声谐振器装置的隔离方法
    • US07296329B1
    • 2007-11-20
    • US09497993
    • 2000-02-04
    • Bradley Paul BarberLinus Albert FetterMichael George Zierdt
    • Bradley Paul BarberLinus Albert FetterMichael George Zierdt
    • H04R17/00B05D5/12B44C1/22
    • H03H3/02H03H9/02118H03H9/172
    • A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.
    • 隔离压电薄膜声谐振器装置以防止由装置产生的横向传播波离开装置和/或干扰相邻装置或系统的方法。 具体地说,这种隔离技术涉及在声谐振器件之间的压电材料层的操纵或隔离,以便限制在横向上远离器件传播的声能的量。 在一个方面,通过RF和声能之间的转换不涉及信号传输的压电材料的至少一部分被从器件中去除。 在另一方面,压电材料的生长在装置的制造期间被限制到某些区域。 在另一方面,在器件制造期间压电材料的晶体取向被破坏或改变,以便形成具有优异的压电性能的区域和表现出差的压电特性的区域。
    • 4. 发明授权
    • Method of manufacturing and mounting electronic devices to limit the effects of parasitics
    • 制造和安装电子设备以限制寄生效应的方法
    • US06675450B1
    • 2004-01-13
    • US09698175
    • 2000-10-30
    • Linus Albert FetterYiu-Huen WongMichael George Zierdt
    • Linus Albert FetterYiu-Huen WongMichael George Zierdt
    • H04R1700
    • H03H9/172G01R31/2824H01L24/81H01L2224/8121H01L2224/81815H01L2924/01019H01L2924/14H03H3/02H03H9/02125Y10T29/42Y10T29/49144Y10T29/49155Y10T29/49156H01L2924/00
    • A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitanaces and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
    • 一种制造和安装电子设备以消除寄生效应对设备性能的方法。 在一个方面,在制造期间,器件的衬底表面涂覆有薄的耐蚀刻膜,其用作屏障以允许去除膜下方的衬底材料,产生悬挂结构,剩余的电路层在其上休息。 或者,该装置由与装置成一体的膜制成,并且用作支撑膜。 为了将器件安装在载体或封装上,在器件的导体的端部附近施加焊料凸块,然后将管芯固定到载体或封装上,并将其定位成使得从导体延伸的引线与接合条配合 在载体或包装上。 焊料凸块然后被回流或熔化,以在器件的引线和载体的相应接合条之间建立电连接。 所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响,安装的器件被进一步配置以便调出在制造之后仍然存在的任何残留寄生效应。
    • 7. 发明授权
    • Method and apparatus for thickness control and reproducibility of dielectric film deposition
    • 电介质膜沉积的厚度控制和再现性的方法和装置
    • US06746577B1
    • 2004-06-08
    • US09465880
    • 1999-12-16
    • Bradley Paul BarberLinus Albert Fetter
    • Bradley Paul BarberLinus Albert Fetter
    • C23C1434
    • H01J37/32935C23C14/0042C23C14/545
    • The invention embodies a method and apparatus for controlling the thickness of a dielectric film formed by physical vapor deposition (PVD). The method compensates for the continuously varying electrical load conditions inherent in dielectric deposition via PVD. The method can be implemented through three different stages. Initially, the system power supply can be configured to operate in either constant current or constant voltage mode, herein referred to as constant supply parameter mode. Next, a gas composition which minimizes excursions in system impedance under these conditions is empirically determined. Finally, a test deposition can be performed using the constant parameter power supply mode and the gas mixture. This deposition is performed while tracking and summing the energy delivered to the system. The thickness of the deposited film is subsequently measured, and from these data a thickness-per-unit-energy relationship is determined. Depositions of predictable film thickness are then reproducibly performed under these established conditions. In practice, a given deposition is terminated at a value of total energy as determined by the established thickness per unit energy value and the required film thickness. The method is much more reliable than the current art technique of deposition at constant power for a fixed time.
    • 本发明体现了用于控制通过物理气相沉积(PVD)形成的电介质膜的厚度的方法和装置。 该方法补偿了通过PVD的电介质沉积固有的连续变化的电负载条件。 该方法可以通过三个不同的阶段实现。 最初,系统电源可以被配置为以恒定电流或恒定电压模式工作,这里称为恒定电源参数模式。 接下来,经验地确定在这些条件下最小化系统阻抗偏移的气体组成。 最后,可以使用恒定参数供电模式和气体混合物进行测试沉积。 在对传送到系统的能量进行跟踪和求和时执行该沉积。 随后测量沉积膜的厚度,并根据这些数据确定每单位能量的厚度关系。 然后可以在这些建立的条件下重复地进行可预测的膜厚度的沉积。 在实践中,给定的沉积以由每单位能量值确定的厚度和所需的膜厚确定的总能量值终止。 该方法比目前在恒定功率下固定固定时间的沉积技术更可靠。